Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

PubMed

Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

2017-03-01

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm 2 ), insulating property (leakage current densities <10 -7 A/cm 2 ), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Measurements of the electrical resistance and the hydrogen depth distribution for Ni 60Nb 20Zr 20 amorphous alloy before and after hydrogen charging

NASA Astrophysics Data System (ADS)

Nakano, Sumiaki; Ohtsu, Naofumi; Nagata, Shinji; Yamaura, Shin-ichi; Uchinashi, Sakae; Kimura, Hisamichi; Shikama, Tatsuo; Inoue, Akihisa

2005-02-01

A Ni 60Nb 20Zr 20 amorphous alloy was prepared by the single-roller melt-spinning technique. The change in the electrical resistance of the alloy after electrochemical hydrogen charging in 6 N KOH solution was investigated. The change in the hydrogen depth distribution in the alloy was also investigated by elastic recoil detection. As a result, we found that the electrical resistance of the alloy increases with increasing the hydrogen content in the alloy and that a large number of hydrogen atoms are remained in the surface area of the hydrogen-charged alloy.

X-ray imaging with amorphous silicon active matrix flat-panel imagers (AMFPIs)

NASA Astrophysics Data System (ADS)

El-Mohri, Youcef; Antonuk, Larry E.; Jee, Kyung-Wook; Maolinbay, Manat; Rong, Xiujiang; Siewerdsen, Jeffrey H.; Verma, Manav; Zhao, Qihua

1997-07-01

Recent advances in thin-film electronics technology have opened the way for the use of flat-panel imagers in a number of medical imaging applications. These novel imagers offer real time digital readout capabilities (˜30 frames per second), radiation hardness (>106cGy), large area (30×40 cm2) and compactness (˜1 cm). Such qualities make them strong candidates for the replacement of conventional x-ray imaging technologies such as film-screen and image intensifier systems. In this report, qualities and potential of amorphous silicon based active matrix flat-panel imagers are outlined for various applications such as radiation therapy, radiography, fluoroscopy and mammography.

Amorphous silicon as high index photonic material

NASA Astrophysics Data System (ADS)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Enhanced Azo-Dyes Degradation Performance of Fe-Si-B-P Nanoporous Architecture

PubMed Central

Weng, Nan; Wang, Feng; Qin, Fengxiang; Tang, Wanying; Dan, Zhenhua

2017-01-01

Nanoporous structures were fabricated from Fe76Si9B10P5 amorphous alloy annealed at 773 K by dealloying in 0.05 M H2SO4 solution, as a result of preferential dissolution of α-Fe grains in form of the micro-coupling cells between α-Fe and cathodic residual phases. Nanoporous Fe-Si-B-P powders exhibit much better degradation performance to methyl orange and direct blue azo dyes compared with gas-atomized Fe76Si9B10P5 amorphous powders and commercial Fe powders. The degradation reaction rate constants of nanoporous powders are almost one order higher than those of the amorphous counterpart powders and Fe powders, accompanying with lower activation energies of 19.5 and 26.8 kJ mol−1 for the degradation reactions of methyl orange and direct blue azo dyes, respectively. The large surface area of the nanoporous structure, and the existence of metalloids as well as residual amorphous phase with high catalytic activity are responsible for the enhanced azo-dyes degradation performance of the nanoporous Fe-Si-B-P powders. PMID:28846622

Hydrogen absorption of Pd/ZrO2 composites prepared from Zr65Pd35 and Zr60Pd35Pt5 amorphous alloys

NASA Astrophysics Data System (ADS)

Ozawa, Masakuni; Katsuragawa, Naoya; Hattori, Masatomo; Yogo, Toshinobu; Yamamura, Shin-ichi

2018-01-01

Metal-dispersed composites were derived from amorphous Zr65Pd35 and Zr65Pd30Pt5 alloys and their hydrogen absorption behavior was studied. X-ray diffractograms and scanning electron micrographs indicated that mixtures containing ZrO2, the metallic phase of Pd, and PdO were formed for both amorphous alloys heat-treated in air. In the composites, micron-sized Pd-based metal precipitates were embedded in a ZrO2 matrix after heat treatment at 800 °C in air. The hydrogen temperature-programmed reduction was applied to study the reactivity of hydrogen gas with the oxidized Zr65Pd35 and Zr65Pd30Pt5 materials. Rapid hydrogen absorption and release were observed on the composite derived from the amorphous alloy below 100 °C. The hydrogen pressure-concentration isotherm showed that the absorbed amount of hydrogen in materials depended on the formation of the Pd or Pt-doped Pd phase and its large interface area to the matrix in the nanocomposites. The results indicate the importance of the composite structure for the fabrication of a new type of hydrogen storage material prepared from amorphous alloys.

WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, J; Goldan, A; Zhao, W

2014-06-15

Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITOmore » signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.« less

Structural Inheritance and Redox Performance of Nanoporous Electrodes from Nanocrystalline Fe85.2B10-14P0-4Cu0.8 Alloys

PubMed Central

Fu, Chaoqun; Xu, Lijun; Dan, Zhenhua; Makino, Akihiro; Hara, Nobuyoshi; Qin, Fengxiang; Chang, Hui

2017-01-01

Nanoporous electrodes have been fabricated by selectively dissolving the less noble α-Fe crystalline phase from nanocrystalline Fe85.2B14–xPxCu0.8 alloys (x= 0, 2, 4 at.%). The preferential dissolution is triggered by the weaker electrochemical stability of α-Fe nanocrystals than amorphous phase. The final nanoporous structure is mainly composed of amorphous residual phase and minor undissolved α-Fe crystals and can be predicted from initial microstructure of nanocrystalline precursor alloys. The structural inheritance is proved by the similarity of the size and outlines between nanopores formed after dealloying in 0.1 M H2SO4 and α-Fe nanocrystals precipitated after annealing of amorphous Fe85.2B14−xPxCu0.8 (x = 0, 2, 4 at.%) alloys. The Redox peak current density of the nanoporous electrodes obtained from nanocrystalline Fe85.2B10P4Cu0.8 alloys is more than one order higher than those of Fe plate electrode and its counterpart nanocrystalline alloys due to the large surface area and nearly-amorphous nature of ligaments. PMID:28594378

Emission of blue light from hydrogenated amorphous silicon carbide

NASA Astrophysics Data System (ADS)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Amorphous lead oxide (a-PbO): suppression of signal lag via engineering of the layer structure.

PubMed

Semeniuk, O; Grynko, O; Juska, G; Reznik, A

2017-10-16

Presence of a signal lag is a bottle neck of performance for many non-crystalline materials, considered for dynamic radiation sensing. Due to inadequate lag-related temporal performance, polycrystalline layers of CdZnTe, PbI 2 , HgI 2 and PbO are not practically utilized, despite their superior X-ray sensitivity and low production cost (even for large area detectors). In the current manuscript, we show that a technological step to replace nonhomogeneous disorder in polycrystalline PbO with homogeneous amorphous PbO structure suppresses signal lag and improves time response to X-ray irradiation. In addition, the newly developed amorphous lead oxide (a-PbO) possesses superior X-ray sensitivity in terms of electron-hole pair creation energy [Formula: see text] in comparison with amorphous selenium - currently the only photoconductor used as an X-ray-to-charge transducer in the state-of-the-art direct conversion X-ray medical imaging systems. The proposed advances of the deposition process are low cost, easy to implement and with certain customization might potentially be applied to other materials, thus paving the way to their wide-range commercial use.

Spontaneous crystalline-to-amorphous phase transformation of organic or medicinal compounds in the presence of porous media, part 2: amorphization capacity and mechanisms of interaction.

PubMed

Qian, Ken K; Suib, Steven L; Bogner, Robin H

2011-11-01

Amorphization of crystalline compounds using mesoporous media is a promising technique to improve the solubility and dissolution rate of poorly soluble compounds. The objective of this paper is to determine the capacity of amorphization and understand the mechanisms of phase transformation. Commercial grades of mesoporous silicon dioxide (SiO(2)) samples (5- to 30-nm mean pore diameters) with either constant surface area or constant pore volume were used. The amorphization capacity of naphthalene was not proportional to either the surface area or the pore volume measured using adsorption chambers. Instead, the amorphization capacity correlated with surface curvature, that is, the smaller the pore diameter and the higher the surface curvature, the greater the amorphization capacity. The change in surface chemistry due to a highly curved surface may be responsible for the enhanced amorphization capacity as well. The amorphization of crystalline compounds was facilitated through capillary condensation, with the decrease in pore volume as the direct experimental evidence. The amorphization capacity was also enhanced by the dipole-dipole or dipole-induced dipole interaction, promoted by the hydroxyl groups on the surface of SiO(2). The enthalpy of vapor-solid condensation of crystalline compounds was a useful indicator to predict the rank order of amorphization capacity. Copyright © 2011 Wiley-Liss, Inc.

Fabrication of hierarchical porous hollow carbon spheres with few-layer graphene framework and high electrochemical activity for supercapacitor

NASA Astrophysics Data System (ADS)

Chen, Jing; Hong, Min; Chen, Jiafu; Hu, Tianzhao; Xu, Qun

2018-06-01

Porous amorphous carbons with large number of defects and dangling bonds indicate great potential application in energy storage due to high specific surface area and strong adsorption properties, but poor conductivity and pore connection limit their practical application. Here few-layer graphene framework with high electrical conductivity is embedded and meanwhile hierarchical porous structure is constructed in amorphous hollow carbon spheres (HCSs) by catalysis of Fe clusters of angstrom scale, which are loaded in the interior of crosslinked polystyrene via a novel method. These unique HCSs effectively integrate the inherent properties from two-dimensional sp2-hybridized carbon, porous amorphous carbon, hierarchical pore structure and thin shell, leading to high specific capacitance up to 561 F g-1 at a current density of 0.5 A g-1 as an electrode of supercapacitor with excellent recyclability, which is much higher than those of other reported porous carbon materials up to present.

Can amorphization take place in nanoscale interconnects?

PubMed

Kumar, S; Joshi, K L; van Duin, A C T; Haque, M A

2012-03-09

The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and pressure are only the means. For nanoscale interconnects carrying modest current density, large vacancy concentrations may be generated without the necessity of high temperature or pressure due to the large fraction of grain boundaries and triple points. To investigate this hypothesis, we performed in situ transmission electron microscope (TEM) experiments on 200 nm thick (80 nm average grain size) aluminum specimens. Electron diffraction patterns indicate partial amorphization at modest current density of about 10(5) A cm(-2), which is too low to trigger electromigration. Since amorphization results in drastic decrease in mechanical ductility as well as electrical and thermal conductivity, further increase in current density to about 7 × 10(5) A cm(-2) resulted in brittle fracture failure. Our molecular dynamics (MD) simulations predict the formation of amorphous regions in response to large mechanical stresses (due to nanoscale grain size) and excess vacancies at the cathode side of the thin films. The findings of this study suggest that amorphization can precede electromigration and thereby play a vital role in the reliability of micro/nanoelectronic devices.

A Flexible Platform Containing Graphene Mesoporous Structure and Carbon Nanotube for Hydrogen Evolution

PubMed Central

Zhang, Rujing; Li, Xiao; Zhang, Li; Lin, Shuyuan

2016-01-01

It is of great significance to design a platform with large surface area and high electrical conductivity for poorly conductive catalyst for hydrogen evolution reaction (HER), such as molybdenum sulfide (MoSx), a promising and cost‐effective nonprecious material. Here, the design and preparation of a free‐standing and tunable graphene mesoporous structure/single‐walled carbon nanotube (GMS/SWCNT) hybrid membrane is reported. Amorphous MoSx is electrodeposited on this platform through a wet chemical process under mild temperature. For MoSx@GMS/SWCNT hybrid electrode with a low catalyst loading of 32 μg cm−2, the onset potential is near 113 mV versus reversible hydrogen electrode (RHE) and a high current density of ≈71 mA cm−2 is achieved at 250 mV versus RHE. The excellent HER performance can be attributed to the large surface area for MoSx deposition, as well as the efficient electron transport and abundant active sites on the amorphous MoSx surface. This novel catalyst is found to outperform most previously reported MoSx‐based HER catalysts. Moreover, the flexibility of the electrode facilitates its stable catalytic performance even in extremely distorted states. PMID:27980998

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

NASA Astrophysics Data System (ADS)

Hu, Shu; McIntyre, Paul C.

2012-02-01

The kinetics of Al-catalyzed layer exchange crystallization of amorphous germanium (Ge) thin films at low temperatures is reported. Observation of Ge mass transport from an underlying amorphous Ge layer to the Al film surface through an interposed sub-nanometer GeOx interfacial layer allows independent measurement of the areal density and average area of crystalline Ge islands formed on the film surface. We show that bias-voltage stressing of the interfacial layer can be used to control the areal density of nucleated Ge islands. Based on experimental observations, the Johnson-Mehl-Avrami-Kolmogorov phase transformation theory is used to model nanoscale nucleation and growth of Ge islands in two dimensions. Ge island nucleation kinetics follows an exponentially decaying nucleation rate with time. Ge island growth kinetics switches from linear growth at a constant growth velocity to diffusion-limited growth as the growth front advances. The transition point between these two regimes depends on the Ge nucleation site density and the annealing temperature. Knowledge of the kinetics of low-temperature crystallization is important in achieving textured polycrystalline Ge thin films with large grains for applications in large-area electronics and solar energy conversion.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

A graphene oxide-carbon nanotube grid for high-resolution transmission electron microscopy of nanomaterials.

PubMed

Zhang, Lina; Zhang, Haoxu; Zhou, Ruifeng; Chen, Zhuo; Li, Qunqing; Fan, Shoushan; Ge, Guanglu; Liu, Renxiao; Jiang, Kaili

2011-09-23

A novel grid for use in transmission electron microscopy is developed. The supporting film of the grid is composed of thin graphene oxide films overlying a super-aligned carbon nanotube network. The composite film combines the advantages of graphene oxide and carbon nanotube networks and has the following properties: it is ultra-thin, it has a large flat and smooth effective supporting area with a homogeneous amorphous appearance, high stability, and good conductivity. The graphene oxide-carbon nanotube grid has a distinct advantage when characterizing the fine structure of a mass of nanomaterials over conventional amorphous carbon grids. Clear high-resolution transmission electron microscopy images of various nanomaterials are obtained easily using the new grids.

Large-deformation and high-strength amorphous porous carbon nanospheres

NASA Astrophysics Data System (ADS)

Yang, Weizhu; Mao, Shimin; Yang, Jia; Shang, Tao; Song, Hongguang; Mabon, James; Swiech, Wacek; Vance, John R.; Yue, Zhufeng; Dillon, Shen J.; Xu, Hangxun; Xu, Baoxing

2016-04-01

Carbon is one of the most important materials extensively used in industry and our daily life. Crystalline carbon materials such as carbon nanotubes and graphene possess ultrahigh strength and toughness. In contrast, amorphous carbon is known to be very brittle and can sustain little compressive deformation. Inspired by biological shells and honeycomb-like cellular structures in nature, we introduce a class of hybrid structural designs and demonstrate that amorphous porous carbon nanospheres with a thin outer shell can simultaneously achieve high strength and sustain large deformation. The amorphous carbon nanospheres were synthesized via a low-cost, scalable and structure-controllable ultrasonic spray pyrolysis approach using energetic carbon precursors. In situ compression experiments on individual nanospheres show that the amorphous carbon nanospheres with an optimized structure can sustain beyond 50% compressive strain. Both experiments and finite element analyses reveal that the buckling deformation of the outer spherical shell dominates the improvement of strength while the collapse of inner nanoscale pores driven by twisting, rotation, buckling and bending of pore walls contributes to the large deformation.

Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

NASA Astrophysics Data System (ADS)

Adam, Adam Abdalla Elbashir; Cheng, Xiaomin; Abuelhassan, Hassan H.; Miao, Xiang Shui

2017-06-01

Phase-change materials (PCMs) are the most promising candidates to be used as an active media in the universal data storage and spintronic devices, due to their large differences in physical properties of the amorphous-crystalline phase transition behavior. In the present study, the microstructure, magnetic and electrical behaviors of Ge0.94Mn0.06Te thin film were investigated. The crystallographic structure of Ge0.94Mn0.06Te thin film was studied sing X-ray diffractometer (XRD) and High Resolution Transmission Electron Microscope (HR-TEM). The XRD pattern showed that the crystallization structure of the film was rhombohedral phase for GeTe with a preference (202) orientation. The HR-TEM image of the crystalline Ge0.94Mn0.06Te thin film demonstrated that, there were two large crystallites and small amorphous areas. The magnetization as a function of the magnetic field analyses of both amorphous and crystalline states showed the ferromagnetic hysteretic behaviors. Then, the hole carriers concentration of the film was measured and it found to be greater than 1021 cm-3 at room temperature. Moreover, the anomalous of Hall Effect (AHE) was clearly observed for the measuring temperatures 5, 10 and 50 K. The results demonstrated that the magnitude of AHE decreased when the temperature was increasing.

Structural Amorphous Steels

NASA Astrophysics Data System (ADS)

Lu, Z. P.; Liu, C. T.; Thompson, J. R.; Porter, W. D.

2004-06-01

Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemist’s dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed.

Structure-Property Relationships in Amorphous Transparent Conducting Oxides

NASA Astrophysics Data System (ADS)

Moffitt, Stephanie Lucille

Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

Development of solid-state avalanche amorphous selenium for medical imaging.

PubMed

Scheuermann, James R; Goldan, Amir H; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei

2015-03-01

Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.

Theory of amorphous ices.

PubMed

Limmer, David T; Chandler, David

2014-07-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

PubMed Central

Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

2011-01-01

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples. PMID:22163893

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Clinical comparative study with a large-area amorphous silicon flat-panel detector: image quality and visibility of anatomic structures on chest radiography.

PubMed

Fink, Christian; Hallscheidt, Peter J; Noeldge, Gerd; Kampschulte, Annette; Radeleff, Boris; Hosch, Waldemar P; Kauffmann, Günter W; Hansmann, Jochen

2002-02-01

The objective of this study was to compare clinical chest radiographs of a large-area, flat-panel digital radiography system and a conventional film-screen radiography system. The comparison was based on an observer preference study of image quality and visibility of anatomic structures. Routine follow-up chest radiographs were obtained from 100 consecutive oncology patients using a large-area, amorphous silicon flat-panel detector digital radiography system (dose equivalent to a 400-speed film system). Hard-copy images were compared with previous examinations of the same individuals taken on a conventional film-screen system (200-speed). Patients were excluded if changes in the chest anatomy were detected or if the time interval between the examinations exceeded 1 year. Observer preference was evaluated for the image quality and the visibility of 15 anatomic structures using a five-point scale. Dose measurements with a chest phantom showed a dose reduction of approximately 50% with the digital radiography system compared with the film-screen radiography system. The image quality and the visibility of all but one anatomic structure of the images obtained with the digital flat-panel detector system were rated significantly superior (p < or = 0.0003) to those obtained with the conventional film-screen radiography system. The image quality and visibility of anatomic structures on the images obtained by the flat-panel detector system were perceived as equal or superior to the images from conventional film-screen chest radiography. This was true even though the radiation dose was reduced approximately 50% with the digital flat-panel detector system.

Coherent scatter-controlled phase-change grating structures in silicon using femtosecond laser pulses.

PubMed

Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

2017-07-04

Periodic structures of alternating amorphous-crystalline fringes have been fabricated in silicon using repetitive femtosecond laser exposure (800 nm wavelength and 120 fs duration). The method is based on the interference of the incident laser light with far- and near-field scattered light, leading to local melting at the interference maxima, as demonstrated by femtosecond microscopy. Exploiting this strategy, lines of highly regular amorphous fringes can be written. The fringes have been characterized in detail using optical microscopy combined modelling, which enables a determination of the three-dimensional shape of individual fringes. 2D micro-Raman spectroscopy reveals that the space between amorphous fringes remains crystalline. We demonstrate that the fringe period can be tuned over a range of 410 nm - 13 µm by changing the angle of incidence and inverting the beam scan direction. Fine control over the lateral dimensions, thickness, surface depression and optical contrast of the fringes is obtained via adjustment of pulse number, fluence and spot size. Large-area, highly homogeneous gratings composed of amorphous fringes with micrometer width and millimeter length can readily be fabricated. The here presented fabrication technique is expected to have applications in the fields of optics, nanoelectronics, and mechatronics and should be applicable to other materials.

Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Kashino, Junichi; Matsutani, Akihiro; Ohtsuki, Hideo; Miyashita, Takahiro; Koyama, Fumio

2014-09-01

We report on the design and fabrication of a highly angular dependent high contrast grating (HCG) mirror. The modeling and experiment on amorphous-Si/SiO2 HCG clearly show the large angular dependence of reflectivity, which enables single transverse-mode operations of large-area VCSELs. We fabricate 980 nm VCSELs with the angular dependent HCG functioning as a spatial frequency filter. We obtained the single transverse mode operation of the fabricated device in contrast to conventional VCSELs with semiconductor multilayer mirrors.

Progress in amorphous silicon based large-area multijunction modules

NASA Astrophysics Data System (ADS)

Carlson, D. E.; Arya, R. R.; Bennett, M.; Chen, L.-F.; Jansen, K.; Li, Y.-M.; Maley, N.; Morris, J.; Newton, J.; Oswald, R. S.; Rajan, K.; Vezzetti, D.; Willing, F.; Yang, L.

1996-01-01

Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area single- and tandem junction cells. Average initial conversion efficiencies of 8.8% at 85% yield have been obtained in pilot production runs with 4 ft2 tandem modules.

Theory of amorphous ices

PubMed Central

Limmer, David T.; Chandler, David

2014-01-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

PubMed

Sun, Zhimei; Zhou, Jian; Pan, Yuanchun; Song, Zhitang; Mao, Ho-Kwang; Ahuja, Rajeev

2011-06-28

Ge(2)Sb(2)Te(5) (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversible crystalline-amorphous and polymorphic amorphous transitions in NaCl structured GST by ab initio molecular dynamics calculations. We have showed that the onset amorphization of GST starts at approximately 18 GPa and the system become completely random at approximately 22 GPa. This amorphous state has a cubic framework (c-amorphous) of sixfold coordinations. With further increasing pressure, the c-amorphous transforms to a high-density amorphous structure with trigonal framework (t-amorphous) and an average coordination number of eight. The pressure-induced amorphization is investigated to be due to large displacements of Te atoms for which weak Te-Te bonds exist or vacancies are nearby. Upon decompressing to ambient conditions, the original cubic crystalline structure is restored for c-amorphous, whereas t-amorphous transforms to another amorphous phase that is similar to the melt-quenched amorphous GST.

Defect-induced solid state amorphization of molecular crystals

NASA Astrophysics Data System (ADS)

Lei, Lei; Carvajal, Teresa; Koslowski, Marisol

2012-04-01

We investigate the process of mechanically induced amorphization in small molecule organic crystals under extensive deformation. In this work, we develop a model that describes the amorphization of molecular crystals, in which the plastic response is calculated with a phase field dislocation dynamics theory in four materials: acetaminophen, sucrose, γ-indomethacin, and aspirin. The model is able to predict the fraction of amorphous material generated in single crystals for a given applied stress. Our results show that γ-indomethacin and sucrose demonstrate large volume fractions of amorphous material after sufficient plastic deformation, while smaller amorphous volume fractions are predicted in acetaminophen and aspirin, in agreement with experimental observation.

Interaction of acetonitrile with the surfaces of amorphous and crystalline ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schaff, J.E.; Roberts, J.T.

1999-10-12

The adsorption of acetonitrile (CH{sub 3}CN) on ultrathin films of ice under ultrahigh vacuum was investigated with temperature-programmed desorption ass spectrometry (TPD) and Fourier transform infrared reflection absorption spectroscopy (FTIRAS). Two types of film were studied, amorphous and crystalline. On the amorphous films, two sates of adsorbed acetonitrile were observed by TPD and FTIRAS. One of the states is attributed to acetonitrile that is hydrogen bonded to agree OH group at the ice surface; the other state is assigned to acetonitrile that is purely physiorbed. Evidence for the hydrogen-bonded state is two-fold. First, there is a large kinetic isotope effectmore » for desorption from H{sub 2}O-and D{sub 2}O-ice: the desorption temperatures from ice-h{sub 2} and ice-d{sub 2} are {approximately}161 and {approximately}176 K, respectively. Second, the C{triple{underscore}bond}N stretching frequency (2,265 cm{sup {minus}1}) is 16 cm{sup {minus}1} is greater than that of physisorbed acetonitrile, and it is roughly equal to that of acetonitrile which is hydrogen bonded to an OH group at the air-liquid water interface. On the crystalline films, there is no evidence for a hydrogen-bonded state in the TPD spectra. The FTIRAS spectra do show that some hydrogen-bonded acetonitrile is present but at a maximum coverage that is roughly one-sixth of that on the amorphous surface. The difference between the amorphous and crystalline surfaces cannot be attributed to a difference n surface areas. Rather, this work provides additional evidence that the surface chemical properties of amorphous ice are different from those of crystalline ice.« less

Oxygen partial pressure influence on the character of InGaZnO thin films grown by PLD

NASA Astrophysics Data System (ADS)

Lu, Yi; Wang, Li

2012-11-01

The amorphous oxide semiconductors (AOSs) are promising for emerging large-area optoelectronic applications because of capability of large-area, uniform deposition at low temperatures such as room temperature (RT). Indium-gallium-zinc oxide (InGaZnO) thin film is a promising amorphous semiconductors material in thin film transistors (TFT) for its excellent electrical properties. In our work, the InGaZnO thin films are fabricated on the SiO2 glass using pulsed laser deposition (PLD) in the oxygen partial pressure altered from 1 to 10 Pa at RT. The targets were prepared by mixing Ga2O3, In2O3, and ZnO powder at a mol ratio of 1: 7: 2 before the solid-state reactions in a tube furnace at the atmospheric pressure. The targets were irradiated by an Nd:YAG laser(355nm). Finally, we have three films of 270nm, 230nm, 190nm thick for 1Pa, 5Pa, 10Pa oxygen partial pressure. The product thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall-effect investigation. The comparative study demonstrated the character changes of the structure and electronic transport properties, which is probably occurred as a fact of the different oxygen partial pressure used in the PLD.

MnO2/carbon nanowalls composite electrode for supercapacitor application

NASA Astrophysics Data System (ADS)

Hassan, Sameh; Suzuki, Masaaki; Mori, Shinsuke; El-Moneim, Ahmed Abd

2014-03-01

Amorphous MnO2/carbon nanowalls composite films are developed for the supercapacitor applications. Synthesis of carbon nanowalls template is performed by plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system. A well dispersion of amorphous MnO2 domains throughout carbon nanowalls template is obtained by potentiostatic anodic deposition technique. Carbon nanowalls enable to improve the capacitive behavior and rate capability of MnO2, a specific capacitance of 851 F g-1 at a current density of 1 mA cm-2 and charge transfer resistance of 1.02 Ω are obtained. MnO2/carbon nanowalls composite film exhibits energy density of 118 wh kg-1, power density of 783 wh kg-1, and capacitance retention of 92% after long cycle life of 2000 cycles by charging and discharging at 3 mA cm-2. The high density of atomic scale graphitic edges and large surface area of carbon nanowalls in conjunction with the presence of amorphous MnO2 domains facilitate rapid electron and ion transport and hence offering the potential of the improved capacitive behavior.

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2016-02-09

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge2Sb2Te5 phase-change memory material

PubMed Central

Sun, Zhimei; Zhou, Jian; Pan, Yuanchun; Song, Zhitang; Mao, Ho-Kwang; Ahuja, Rajeev

2011-01-01

Ge2Sb2Te5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversible crystalline-amorphous and polymorphic amorphous transitions in NaCl structured GST by ab initio molecular dynamics calculations. We have showed that the onset amorphization of GST starts at approximately 18 GPa and the system become completely random at approximately 22 GPa. This amorphous state has a cubic framework (c-amorphous) of sixfold coordinations. With further increasing pressure, the c-amorphous transforms to a high-density amorphous structure with trigonal framework (t-amorphous) and an average coordination number of eight. The pressure-induced amorphization is investigated to be due to large displacements of Te atoms for which weak Te–Te bonds exist or vacancies are nearby. Upon decompressing to ambient conditions, the original cubic crystalline structure is restored for c-amorphous, whereas t-amorphous transforms to another amorphous phase that is similar to the melt-quenched amorphous GST. PMID:21670255

Large area x-ray detectors for cargo radiography

NASA Astrophysics Data System (ADS)

Bueno, C.; Albagli, D.; Bendahan, J.; Castleberry, D.; Gordon, C.; Hopkins, F.; Ross, W.

2007-04-01

Large area x-ray detectors based on phosphors coupled to flat panel amorphous silicon diode technology offer significant advances for cargo radiologic imaging. Flat panel area detectors provide large object coverage offering high throughput inspections to meet the high flow rate of container commerce. These detectors provide excellent spatial resolution when needed, and enhanced SNR through low noise electronics. If the resolution is reduced through pixel binning, further advances in SNR are achievable. Extended exposure imaging and frame averaging enables improved x-ray penetration of ultra-thick objects, or "select-your-own" contrast sensitivity at a rate many times faster than LDAs. The areal coverage of flat panel technology provides inherent volumetric imaging with the appropriate scanning methods. Flat panel area detectors have flexible designs in terms of electronic control, scintillator selection, pixel pitch, and frame rates. Their cost is becoming more competitive as production ramps up for the healthcare, nondestructive testing (NDT), and homeland protection industries. Typically used medical and industrial polycrystalline phosphor materials such as Gd2O2S:Tb (GOS) can be applied to megavolt applications if the phosphor layer is sufficiently thick to enhance x-ray absorption, and if a metal radiator is used to augment the quantum detection efficiency and reduce x-ray scatter. Phosphor layers ranging from 0.2-mm to 1-mm can be "sandwiched" between amorphous silicon flat panel diode arrays and metal radiators. Metal plates consisting of W, Pb or Cu, with thicknesses ranging from 0.25-mm to well over 1-mm can be used by covering the entire area of the phosphor plate. In some combinations of high density metal and phosphor layers, the metal plate provides an intensification of 25% in signal due to electron emission from the plate and subsequent excitation within the phosphor material. This further improves the SNR of the system.

Commercial Development Of Ovonic Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Ovshinsky, Stanford R.

1983-09-01

One square foot Ovonic amorphous photovoltaic devices are already in commercial production and are manufactured through a continuous web process. The next levels of commercialization required to achieve a large-volume power market will be discussed, and the device specifications correlated with the chemical and electronic properties of the materials that we are developing to achieve even higher efficiencies. It has been long considered a utopian dream to harness the energy of the sun to create electricity that would be competitive in cost to that produced from the conventional sources of energy such as oil, gas, and uranium. The impact on our society of stand-alone power generators without moving parts using the continually available, ubiquitous energy of the sun could certainly lead to a new age with consequences comparable to the first introduction of electricity which greatly accelerated the Industrial Revolution. Low cost, nonpolluting energy not dependent upon or limited by transmission costs could again make DC electricity a realistic option. The relatively young field of photovoltaics suffers from certain dogmas that are just now being questioned. For example, it is thought by many that solar cells utilizing crys-talline materials have inherently higher efficiencies than those using amorphous materials, and that somehow crystalline solar cells, whether fabricated from single crystals or polycrystalline material, in round or rectangular geometries, grown from the melt or by a rib-bon process, can be reduced in cost sufficiently that the economics become attractive enough for large-scale terrestrial generation of power. In this paper, we shall show that amorphous materials can have much higher efficiencies than do crystalline and that the answer to our power generation needs lies not in crystalline but in amorphous technology. At Energy Conversion Devices, Inc. (ECD), we have designed and built a production machine (described by my colleague, Dr. Izu, in a subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

Removal of dissolved and colloidal silica

DOEpatents

Midkiff, William S.

2002-01-01

Small amorphous silica particles are used to provide a relatively large surface area upon which silica will preferentially adsorb, thereby preventing or substantially reducing scaling caused by deposition of silica on evaporative cooling tower components, especially heat exchange surfaces. The silica spheres are contacted by the cooling tower water in a sidestream reactor, then separated using gravity separation, microfiltration, vacuum filtration, or other suitable separation technology. Cooling tower modifications for implementing the invention process have been designed.

The organic matrix of gallstones

PubMed Central

Sutor, D. June; Wooley, Susan E.

1974-01-01

Dissolution of gallstones consisting of cholesterol, calcium carbonate, or calcium phosphate in different solvents left an amorphous organic gel-like substance (the matrix). Matrix from cholesterol stones could be colourless but was usually orange, yellow, or brown while that from calcium carbonate and calcium phosphate stones was almost invariably coloured black or dark brown. These pigments were also shown to be organic and amorphous. The amount of matrix present and its structure varied with the texture of the crystalline material. Irrespective of their composition, laminated pieces of material yielded compact laminated matrix of the same shape as the original piece and areas of loose crystalline material gave small pieces of non-cohesive matrix. Only large cholesterol crystals which usually radiate from the stone nucleus had no associated matrix. ImagesFig 1Fig 2Fig 3Fig 4Fig 5 PMID:4854981

Influence of amorphous content on compaction behaviour of anhydrous alpha-lactose.

PubMed

Ziffels, S; Steckel, H

2010-03-15

Modified lactoses are widely used as filler-binders in direct compression of tablets. Until today, little about the compaction behaviour of anhydrous alpha-lactose is known. In this study, a new method to prepare anhydrous alpha-lactose from alpha-lactose monohydrate by desiccation with heated ethanol was evaluated and the influence of amorphous content in the lactose powder prior to modification on powder properties, compaction behaviour and storage stability was determined. The modification process led to anhydrous alpha-lactose with decreased bulk and tapped density, increased flow rate and significantly higher specific surface area. Due to the higher specific surface area, the compaction behaviour of the anhydrous alpha-lactose was found to be significantly better than the compaction behaviour of powder blends consisting of alpha-lactose monohydrate and amorphous lactose. An influence of the amorphous content prior to modification could be observed only at higher compaction forces. In general, tablets of modified powders needed longer time to disintegrate directly after compression. However, the storage stability of modified tablets was found to be better compared to the amorphous-crystalline tablets which were influenced by storage conditions, initial crushing strength as well as amorphous content due to the re-crystallization of amorphous lactose during storage. 2009 Elsevier B.V. All rights reserved.

Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics

PubMed Central

Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

2014-01-01

Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics. PMID:25297473

Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics.

PubMed

Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

2014-10-09

Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics.

De-vitrification of nanoscale phase-separated amorphous thin films in the immiscible copper-niobium system

NASA Astrophysics Data System (ADS)

Puthucode, A.; Devaraj, A.; Nag, S.; Bose, S.; Ayyub, P.; Kaufman, M. J.; Banerjee, R.

2014-05-01

Copper and niobium are mutually immiscible in the solid state and exhibit a large positive enthalpy of mixing in the liquid state. Using vapour quenching via magnetron co-sputter deposition, far-from equilibrium amorphous Cu-Nb films have been deposited which exhibit a nanoscale phase separation. Annealing these amorphous films at low temperatures (~200 °C) initiates crystallization via the nucleation and growth of primary nanocrystals of a face-centred cubic Cu-rich phase separated by the amorphous matrix. Interestingly, subsequent annealing at a higher temperature (>300 °C) leads to the polymorphic nucleation and growth of large spherulitic grains of a body-centred cubic Nb-rich phase within the retained amorphous matrix of the partially crystallized film. This sequential two-stage crystallization process has been investigated in detail by combining transmission electron microscopy [TEM] (including high-resolution TEM) and atom probe tomography studies. These results provide new insights into the crystallization behaviour of such unusual far-from equilibrium phase-separated metallic glasses in immiscible systems.

Amorphous silicon-carbon nanospheres synthesized by chemical vapor deposition using cheap methyltrichlorosilane as improved anode materials for Li-ion batteries.

PubMed

Zhang, Zailei; Zhang, Meiju; Wang, Yanhong; Tan, Qiangqiang; Lv, Xiao; Zhong, Ziyi; Li, Hong; Su, Fabing

2013-06-21

We report the preparation and characterization of amorphous silicon-carbon (Si-C) nanospheres as anode materials in Li-ion batteries. These nanospheres were synthesized by a chemical vapor deposition at 900 °C using methyltrichlorosilane (CH3SiCl3) as both the Si and C precursor, which is a cheap byproduct in the organosilane industry. The samples were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, nitrogen adsorption, thermal gravimetric analysis, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the synthesized Si-C nanospheres composed of amorphous C (about 60 wt%) and Si (about 40 wt%) had a diameter of 400-600 nm and a surface area of 43.8 m(2) g(-1). Their charge capacities were 483.6, 331.7, 298.6, 180.6, and 344.2 mA h g(-1) at 50, 200, 500, 1000, and 50 mA g(-1) after 50 cycles, higher than that of the commercial graphite anode. The Si-C amorphous structure could absorb a large volume change of Si during Li insertion and extraction reactions and hinder the cracking or crumbling of the electrode, thus resulting in the improved reversible capacity and cycling stability. The work opens a new way to fabricate low cost Si-C anode materials for Li-ion batteries.

Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays

PubMed Central

Xu, Wei-Zong; Ren, Fang-Fang; Ye, Jiandong; Lu, Hai; Liang, Lanju; Huang, Xiaoming; Liu, Mingkai; Shadrivov, Ilya V.; Powell, David A.; Yu, Guang; Jin, Biaobing; Zhang, Rong; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati

2016-01-01

Engineering metamaterials with tunable resonances are of great importance for improving the functionality and flexibility of terahertz (THz) systems. An ongoing challenge in THz science and technology is to create large-area active metamaterials as building blocks to enable efficient and precise control of THz signals. Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated. Analytical modelling based on full-wave techniques and multipole theory exhibits excellent consistent with the experimental observations and reveals that the intrinsic resonance mode at 0.75 THz is dominated by an electric response. The resonant behavior can be effectively tuned by controlling the channel conductivity through an external bias. Such metal/oxide thin-film transistor based controllable metamaterials are energy saving, low cost, large area and ready for mass-production, which are expected to be widely used in future THz imaging, sensing, communications and other applications. PMID:27000419

Microscale Interface Synthesis of Ni-B Amorphous Nanoparticles from NiSO4 by Sodium Borohydride Reduction in Microreactor

NASA Astrophysics Data System (ADS)

Xu, Lei; Peng, Jinhui; Meng, Binfang; Li, Wei; Liu, Bingguo; Luo, Huilong

2016-09-01

Amorphous nanoparticles have attracted a large amount of interest due to their superior catalytic activity and unique selectivity. The Ni-B amorphous nanoparticles were synthesized from aqueous reduction of NiSO4 by sodium borohydride in microscale interface at room temperature. The size, morphology, elemental compositions, and the chemical composition on the surface of Ni-B amorphous nanoparticles were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). All the results showed that the synthesized particles are Ni-B amorphous nanoparticles with uniform in size distribution and having good dispersion. The mean particle diameter of Ni-B amorphous nanoparticles was around 9 nm. The present work provides an alternative synthesis route for the Ni-B amorphous nanoparticles.

Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

PubMed Central

Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

2016-01-01

High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition.

PubMed

Zhan, Hualin; Garrett, David J; Apollo, Nicholas V; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

2016-01-25

High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm(3), were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

NASA Astrophysics Data System (ADS)

van Aken, P. A.; Sharp, T. G.; Seifert, F.

The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, verified by selected area electron diffraction (SAED), produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters (Si-O bond distances, coordination numbers and Debye-Waller factors). The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R 0.172 nm and N 5) to R 0.167 nm and N 4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of as it changes from for sixfold to for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours that is consistent with the presence of an intermediate structural state with fivefold coordination of Si. The distribution of coordination states can be estimated by modelling the amorphization as a decay process. Using the EXELFS data for amorphization, a new method is developed to derive the relative amounts of Si coordinations in high-pressure minerals with mixed coordination. For the radiation-induced amorphization process of stishovite the formation of a transitory structure with Si largely in fivefold coordination is deduced.

Solid-state flat panel imager with avalanche amorphous selenium

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

2016-03-01

Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

Fast-moving dislocations trigger flash weakening in carbonate-bearing faults during earthquakes.

PubMed

Spagnuolo, Elena; Plümper, Oliver; Violay, Marie; Cavallo, Andrea; Di Toro, Giulio

2015-11-10

Rupture fronts can cause fault displacement, reaching speeds up to several ms(-1) within a few milliseconds, at any distance away from the earthquake nucleation area. In the case of silicate-bearing rocks the abrupt slip acceleration results in melting at asperity contacts causing a large reduction in fault frictional strength (i.e., flash weakening). Flash weakening is also observed in experiments performed in carbonate-bearing rocks but evidence for melting is lacking. To unravel the micro-physical mechanisms associated with flash weakening in carbonates, experiments were conducted on pre-cut Carrara marble cylinders using a rotary shear apparatus at conditions relevant to earthquakes propagation. In the first 5 mm of slip the shear stress was reduced up to 30% and CO2 was released. Focused ion beam, scanning and transmission electron microscopy investigations of the slipping zones reveal the presence of calcite nanograins and amorphous carbon. We interpret the CO2 release, the formation of nanograins and amorphous carbon to be the result of a shock-like stress release associated with the migration of fast-moving dislocations. Amorphous carbon, given its low friction coefficient, is responsible for flash weakening and promotes the propagation of the seismic rupture in carbonate-bearing fault patches.

High-pressure Irreversible Amorphization of La1/3NbO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

I Halevy; A Hen; A Broide

2011-12-31

The crystallographic structure of La{sub 1/3}NbO{sub 3} perovskite was studied at high pressures using a diamond-anvil cell and synchrotron radiation. High-pressure energy dispersive (EDS) x-ray diffraction and high-pressure angle dispersive (ADS) x-ray diffraction revealed an irreversible amorphization at {approx}10 GPa. A large change in the bulk modulus accompanied the high-pressure amorphization.

Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Kai; Hrma, Pavel; Washton, Nancy

The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min-1 to 700°C was investigated with transmission electron microscopy, 27Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500°C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (~8 m2 g-1). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

PubMed

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Core-shell silicon nanowire solar cells

PubMed Central

Adachi, M. M.; Anantram, M. P.; Karim, K. S.

2013-01-01

Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded by a thin transparent conductive oxide has both low diffuse and specular reflection with total values as low as < 4% over a broad wavelength range of 400 nm < λ < 650 nm. These anti-reflective properties together with enhanced infrared absorption in the core-shell nanowire facilitates enhancement in external quantum efficiency using two different active shell materials: amorphous silicon and nanocrystalline silicon. As a result, the core-shell nanowire device exhibits a short-circuit current enhancement of 15% with an amorphous Si shell and 26% with a nanocrystalline Si shell compared to their corresponding planar devices. PMID:23529071

High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

PubMed Central

Esmaeili-Rad, Mohammad R.; Salahuddin, Sayeef

2013-01-01

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical. PMID:23907598

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

PubMed

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Long-term oxidization and phase transition of InN nanotextures

PubMed Central

2011-01-01

The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase. PMID:21711908

The Effect of Shock on the Amorphous Component in Altered Basalt

NASA Technical Reports Server (NTRS)

Eckley, S. A.; Wright, S. P.; Rampe, E. B.; Niles, P. B.

2017-01-01

Investigation of the geochemical and mineralogical composition of the Martian surface provides insight into the geologic history of the predominantly basaltic crust. The Chemistry and Mineralogy (CheMin) instrument onboard the Curiosity rover has returned the first X-Ray diffraction data from the Martian surface. However, large proportions (27 +/- 14 with some estimates as high as 50 weight percentage) of an amorphous component have been reported. As a remedy to this problem, mass balance equations using geochemistry, volatile chemistry, and mineralogy have been employed to constrain the geochemistry of the amorphous component. However, "the nature and number of amorphous phases that constitute the amorphous component is not unequivocally known". Multiple hypotheses have been proposed to explain the origin of this amorphous component: Allophane (Al2O); Basaltic glass (Volcanic and impact); Palagonite (Altered basaltic glass); Hisingerite (Fe (sup 3 plus)-bearing phyllosilicate); S/Cl-rich component (sulfates and/or akaganeite); Nanophase ferric oxide component (npOx). Establishing a multi-phase amorphous component from a basaltic precursor that has undergone physical and chemical weathering within geochemical constraints is of paramount importance to better understand the composition of a large portion of the Martian surface (up to 50 weight percentage). Shocked basalts from Lonar Crater in India are valuable analogs for the Martian surface because it is a well-preserved impact crater in a basaltic target. Having undergone pre- and post-shock aqueous alteration, these rocks provide crucial data regarding the effect of shock on the amorphous component in altered basalt. By conducting mass balance equations similar to what has been performed for Gale crater materials, we attempt to calculate the geochemistry of the amorphous component in altered basalts ranging from unshocked to Class 5 (Table 1). This has the potential to reveal the nature and origin (i.e. primary igneous, shock metamorphic, and/or aqueous alteration occurring before or after the impact event) of the amorphous component in shocked basalt with the goal of unravelling the history of the Martian surface.

Iron-Based Amorphous Metals: High-Performance Corrosion-Resistant Material Development

NASA Astrophysics Data System (ADS)

Farmer, Joseph; Choi, Jor-Shan; Saw, Cheng; Haslam, Jeffrey; Day, Dan; Hailey, Phillip; Lian, Tiangan; Rebak, Raul; Perepezko, John; Payer, Joe; Branagan, Daniel; Beardsley, Brad; D'Amato, Andy; Aprigliano, Lou

2009-06-01

An overview of the High-Performance Corrosion-Resistant Materials (HPCRM) Program, which was cosponsored by the Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) and the U.S. Department of Energy (DOE) Office of Civilian and Radioactive Waste Management (OCRWM), is discussed. Programmatic investigations have included a broad range of topics: alloy design and composition, materials synthesis, thermal stability, corrosion resistance, environmental cracking, mechanical properties, damage tolerance, radiation effects, and important potential applications. Amorphous alloys identified as SAM2X5 (Fe49.7Cr17.7Mn1.9Mo7.4W1.6B15.2C3.8Si2.4) and SAM1651 (Fe48Mo14Cr15Y2C15B6) have been produced as meltspun ribbons (MSRs), dropcast ingots, and thermal-spray coatings. Chromium (Cr), molybdenum (Mo), and tungsten (W) additions provided corrosion resistance, while boron (B) enabled glass formation. Earlier electrochemical studies of MSRs and ingots of these amorphous alloys demonstrated outstanding passive film stability. More recently, thermal-spray coatings of these amorphous alloys have been made and subjected to long-term salt-fog and immersion tests; good corrosion resistance has been observed during salt-fog testing. Corrosion rates were measured in situ with linear polarization, while the open-circuit corrosion potentials (OCPs) were simultaneously monitored; reasonably good performance was observed. The sensitivity of these measurements to electrolyte composition and temperature was determined. The high boron content of this particular amorphous metal makes this amorphous alloy an effective neutron absorber and suitable for criticality-control applications. In general, the corrosion resistance of such iron-based amorphous metals is maintained at operating temperatures up to the glass transition temperature. These materials are much harder than conventional stainless steel and Ni-based materials, and are proving to have excellent wear properties, sufficient to warrant their use in earth excavation, drilling, and tunnel-boring applications. Large areas have been successfully coated with these materials, with thicknesses of approximately 1 cm. The observed corrosion resistance may enable applications of importance in industries such as oil and gas production, refining, nuclear power generation, shipping, etc.

Roll-to-Roll printed large-area all-polymer solar cells with 5% efficiency based on a low crystallinity conjugated polymer blend

NASA Astrophysics Data System (ADS)

Gu, Xiaodan; Zhou, Yan; Gu, Kevin; Kurosawa, Tadanori; Yan, Hongping; Wang, Cheng; Toney, Micheal; Bao, Zhenan

The challenge of continuous printing in high efficiency large-area organic solar cells is a key limiting factor for their widespread adoption. We present a materials design concept for achieving large-area, solution coated all-polymer bulk heterojunction (BHJ) solar cells with stable phase separation morphology between the donor and acceptor. The key concept lies in inhibiting strong crystallization of donor and acceptor polymers, thus forming intermixed, low crystallinity and mostly amorphous blends. Based on experiments using donors and acceptors with different degree of crystallinity, our results showed that microphase separated donor and acceptor domain sizes are inversely proportional to the crystallinity of the conjugated polymers. This methodology of using low crystallinity donors and acceptors has the added benefit of forming a consistent and robust morphology that is insensitive to different processing conditions, allowing one to easily scale up the printing process from a small scale solution shearing coater to a large-scale continuous roll-to-roll (R2R) printer. We were able to continuously roll-to-roll slot die print large area all-polymer solar cells with power conversion efficiencies of 5%, with combined cell area up to 10 cm2. This is among the highest efficiencies realized with R2R coated active layer organic materials on flexible substrate. DOE BRIDGE sunshot program. Office of Naval Research.

Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications

PubMed Central

Perez-Taborda, Jaime Andres; Muñoz Rojo, Miguel; Maiz, Jon; Neophytou, Neophytos; Martin-Gonzalez, Marisol

2016-01-01

In this work, we measure the thermal and thermoelectric properties of large-area Si0.8Ge0.2 nano-meshed films fabricated by DC sputtering of Si0.8Ge0.2 on highly ordered porous alumina matrices. The Si0.8Ge0.2 film replicated the porous alumina structure resulting in nano-meshed films. Very good control of the nanomesh geometrical features (pore diameter, pitch, neck) was achieved through the alumina template, with pore diameters ranging from 294 ± 5nm down to 31 ± 4 nm. The method we developed is able to provide large areas of nano-meshes in a simple and reproducible way, being easily scalable for industrial applications. Most importantly, the thermal conductivity of the films was reduced as the diameter of the porous became smaller to values that varied from κ = 1.54 ± 0.27 W K−1m−1, down to the ultra-low κ = 0.55 ± 0.10 W K−1m−1 value. The latter is well below the amorphous limit, while the Seebeck coefficient and electrical conductivity of the material were retained. These properties, together with our large area fabrication approach, can provide an important route towards achieving high conversion efficiency, large area, and high scalable thermoelectric materials. PMID:27650202

Roll-to-Roll Printed Large-Area All-Polymer Solar Cells with 5% Efficiency Based on a Low Crystallinity Conjugated Polymer Blend

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, Xiaodan; Zhou, Yan; Gu, Kevin

The challenge of continuous printing in high-efficiency large-area organic solar cells is a key limiting factor for their widespread adoption. We present a materials design concept for achieving large-area, solution-coated all-polymer bulk heterojunction solar cells with stable phase separation morphology between the donor and acceptor. The key concept lies in inhibiting strong crystallization of donor and acceptor polymers, thus forming intermixed, low crystallinity, and mostly amorphous blends. Based on experiments using donors and acceptors with different degree of crystallinity, the results show that microphase separated donor and acceptor domain sizes are inversely proportional to the crystallinity of the conjugated polymers.more » This particular methodology of using low crystallinity donors and acceptors has the added benefit of forming a consistent and robust morphology that is insensitive to different processing conditions, allowing one to easily scale up the printing process from a small-scale solution shearing coater to a large-scale continuous roll-to-roll (R2R) printer. Large-area all-polymer solar cells are continuously roll-to-roll slot die printed with power conversion efficiencies of 5%, with combined cell area up to 10 cm 2. This is among the highest efficiencies realized with R2R-coated active layer organic materials on flexible substrate.« less

Roll-to-Roll Printed Large-Area All-Polymer Solar Cells with 5% Efficiency Based on a Low Crystallinity Conjugated Polymer Blend

DOE PAGES

Gu, Xiaodan; Zhou, Yan; Gu, Kevin; ...

2017-03-07

The challenge of continuous printing in high-efficiency large-area organic solar cells is a key limiting factor for their widespread adoption. We present a materials design concept for achieving large-area, solution-coated all-polymer bulk heterojunction solar cells with stable phase separation morphology between the donor and acceptor. The key concept lies in inhibiting strong crystallization of donor and acceptor polymers, thus forming intermixed, low crystallinity, and mostly amorphous blends. Based on experiments using donors and acceptors with different degree of crystallinity, the results show that microphase separated donor and acceptor domain sizes are inversely proportional to the crystallinity of the conjugated polymers.more » This particular methodology of using low crystallinity donors and acceptors has the added benefit of forming a consistent and robust morphology that is insensitive to different processing conditions, allowing one to easily scale up the printing process from a small-scale solution shearing coater to a large-scale continuous roll-to-roll (R2R) printer. Large-area all-polymer solar cells are continuously roll-to-roll slot die printed with power conversion efficiencies of 5%, with combined cell area up to 10 cm 2. This is among the highest efficiencies realized with R2R-coated active layer organic materials on flexible substrate.« less

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

DTIC Science & Technology

2014-09-01

methods. Analysis of the as-deposited films reveals epitaxial- like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline ɦ...epitaxial like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h BN film, and amorphous BN (a BN) on the sapphire...BNxOy observed as a shoulder on the B 1s spectra is seen in other polycrystalline h BN films [16], and is most likely due to exposure to ambient

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

PubMed Central

Zhang, Yiyu; Qian, Ling-Xuan; Wu, Zehan; Liu, Xingzhao

2017-01-01

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays. PMID:28772529

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity.

PubMed

Zhang, Yiyu; Qian, Ling-Xuan; Wu, Zehan; Liu, Xingzhao

2017-02-13

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10 -10 A, the highest photosensitivity of 3.9 × 10⁶, and the largest responsivity of 1.5 × 10⁴ A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays.

In situ observation of defect annihilation in Kr ion-irradiated bulk Fe/amorphous-Fe 2 Zr nanocomposite alloy

DOE PAGES

Yu, K. Y.; Fan, Z.; Chen, Y.; ...

2014-08-26

Enhanced irradiation tolerance in crystalline multilayers has received significant attention lately. However, little is known on the irradiation response of crystal/amorphous nanolayers. We report on in situ Kr ion irradiation studies of a bulk Fe 96Zr 4 nanocomposite alloy. Irradiation resulted in amorphization of Fe 2Zr and formed crystal/amorphous nanolayers. α-Fe layers exhibited drastically lower defect density and size than those in large α-Fe grains. In situ video revealed that mobile dislocation loops in α-Fe layers were confined by the crystal/amorphous interfaces and kept migrating to annihilate other defects. This study provides new insights on the design of irradiation-tolerant crystal/amorphousmore » nanocomposites.« less

Polycrystalline semiconductor processing

DOEpatents

Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

1983-01-01

A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

Polycrystalline semiconductor processing

DOEpatents

Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

1983-04-05

A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

Investigating the Pressure-Induced Amorphization of Zeolitic Imidazolate Framework ZIF-8: Mechanical Instability Due to Shear Mode Softening.

PubMed

Ortiz, Aurélie U; Boutin, Anne; Fuchs, Alain H; Coudert, François-Xavier

2013-06-06

We provide the first molecular dynamics study of the mechanical instability that is the cause of pressure-induced amorphization of zeolitic imidazolate framework ZIF-8. By measuring the elastic constants of ZIF-8 up to the amorphization pressure, we show that the crystal-to-amorphous transition is triggered by the mechanical instability of ZIF-8 under compression, due to shear mode softening of the material. No similar softening was observed under temperature increase, explaining the absence of temperature-induced amorphization in ZIF-8. We also demonstrate the large impact of the presence of adsorbate in the pores on the mechanical stability and compressibility of the framework, increasing its shear stability. This first molecular dynamics study of ZIF mechanical properties under variations of pressure, temperature, and pore filling opens the way to a more comprehensive understanding of their mechanical stability, structural transitions, and amorphization.

Electron-beam-induced information storage in hydrogenated amorphous silicon device

DOEpatents

Yacobi, Ben G.

1986-01-01

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

Mechanism for amorphization of boron carbide B{sub 4}C under uniaxial compression

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryal, Sitaram; Rulis, Paul; Ching, W. Y.

2011-11-01

Boron carbide undergoes an amorphization transition under high-velocity impacts, causing it to suffer a catastrophic loss in strength. The failure mechanism is not clear and this limits the ways to improve its resistance to impact. To help uncover the failure mechanism, we used ab initio methods to carry out large-scale uniaxial compression simulations on two polytypes of stoichiometric boron carbide (B{sub 4}C), B{sub 11}C-CBC, and B{sub 12}-CCC, where B{sub 11}C or B{sub 12} is the 12-atom icosahedron and CBC or CCC is the three-atom chain. The simulations were performed on large supercells of 180 atoms. Our results indicate that themore » B{sub 11}C-CBC (B{sub 12}-CCC) polytype becomes amorphous at a uniaxial strain s = 0.23 (0.22) and with a maximum stress of 168 (151) GPa. In both cases, the amorphous state is the consequence of structural collapse associated with the bending of the three-atom chain. Careful analysis of the structures after amorphization shows that the B{sub 11}C and B{sub 12} icosahedra are highly distorted but still identifiable. Calculations of the elastic coefficients (C{sub ij}) at different uniaxial strains indicate that both polytypes may collapse under a much smaller shear strain (stress) than the uniaxial strain (stress). On the other hand, separate simulations of both models under hydrostatic compression up to a pressure of 180 GPa show no signs of amorphization, in agreement with experimental observation. The amorphized nature of both models is confirmed by detailed analysis of the evolution of the radial pair distribution function, total density of states, and distribution of effective charges on atoms. The electronic structure and bonding of the boron carbide structures before and after amorphization are calculated to further elucidate the mechanism of amorphization and to help form the proper rationalization of experimental observations.« less

Processing Bi-Pb-Sr-Ca-Cu-O superconductors from amorphous state

NASA Technical Reports Server (NTRS)

Chiang, C. K.; Wong-Ng, W.; Cook, L. P.; Freiman, S. W.; Hwang, N. M.; Vaudin, M.; Hill, M. D.; Shull, R. D.; Shapiro, A. J.; Swartzendruber, L. J.

1991-01-01

The bismuth based high T sub c superconductors can be processed via an amorphous Bi-Pb-Sr-Ca-Cu oxide. The amorphous oxides were prepared by melting the constituent powders in an alumina crucible at 1200 C in air followed by pouring the liquid onto an aluminum plate, and rapidly pressing with a second plate. In the amorphous state, no crystalline phase was identified in the powder x ray diffraction pattern of the quenched materials. After heat treatment at high temperature the amorphous materials crystallized into a glass ceramic containing a large fraction of the Bi2Sr2Ca2Cu3O(x) phase T sub c = 110 K. The processing method, crystallization, and results of dc electrical resistivity and ac magnetic susceptibility measurements are discussed.

Microstructure Evolution and Related Magnetic Properties of Cu-Zr-Al-Gd Phase-Separating Metallic Glasses

NASA Astrophysics Data System (ADS)

Kim, Sang Jun; Kim, Jinwoo; Park, Eun Soo

2018-04-01

We carefully investigated the correlation between microstructures and magnetic properties of Cu-Zr-Al-Gd phase-separating metallic glasses (PSMGs). The saturation magnetizations of the PSMGs were determined by total Gd contents of the alloys, while their coercivity exhibits a large deviation by the occurrence of phase separation due to the boundary pinning effect of hierarchically separated amorphous phases. Especially, the PSMGs containing Gd-rich amorphous nanoparticles show the highest coercivity which can be attributed to the size effect of the ferromagnetic amorphous phase. Furthermore, the selective crystallization of ferromagnetic amorphous phases can affect the magnetization behavior of the PSMGs. Our results could provide a novel strategy for tailoring unique soft magnetic properties of metallic glasses by introducing hierarchically separated amorphous phases and controlling their crystallinity.

Microstructure Evolution and Related Magnetic Properties of Cu-Zr-Al-Gd Phase-Separating Metallic Glasses

NASA Astrophysics Data System (ADS)

Kim, Sang Jun; Kim, Jinwoo; Park, Eun Soo

2018-06-01

We carefully investigated the correlation between microstructures and magnetic properties of Cu-Zr-Al-Gd phase-separating metallic glasses (PSMGs). The saturation magnetizations of the PSMGs were determined by total Gd contents of the alloys, while their coercivity exhibits a large deviation by the occurrence of phase separation due to the boundary pinning effect of hierarchically separated amorphous phases. Especially, the PSMGs containing Gd-rich amorphous nanoparticles show the highest coercivity which can be attributed to the size effect of the ferromagnetic amorphous phase. Furthermore, the selective crystallization of ferromagnetic amorphous phases can affect the magnetization behavior of the PSMGs. Our results could provide a novel strategy for tailoring unique soft magnetic properties of metallic glasses by introducing hierarchically separated amorphous phases and controlling their crystallinity.

Cataract-associated P23T γD-crystallin retains a native-like fold in amorphous-looking aggregates formed at physiological pH

NASA Astrophysics Data System (ADS)

Boatz, Jennifer C.; Whitley, Matthew J.; Li, Mingyue; Gronenborn, Angela M.; van der Wel, Patrick C. A.

2017-05-01

Cataracts cause vision loss through the large-scale aggregation of eye lens proteins as a result of ageing or congenital mutations. The development of new treatments is hindered by uncertainty about the nature of the aggregates and their mechanism of formation. We describe the structure and morphology of aggregates formed by the P23T human γD-crystallin mutant associated with congenital cataracts. At physiological pH, the protein forms aggregates that look amorphous and disordered by electron microscopy, reminiscent of the reported formation of amorphous deposits by other crystallin mutants. Surprisingly, solid-state NMR reveals that these amorphous deposits have a high degree of structural homogeneity at the atomic level and that the aggregated protein retains a native-like conformation, with no evidence for large-scale misfolding. Non-physiological destabilizing conditions used in many in vitro aggregation studies are shown to yield qualitatively different, highly misfolded amyloid-like fibrils.

Thermoelectric effects of amorphous Ga-Sn-O thin film

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Fast-moving dislocations trigger flash weakening in carbonate-bearing faults during earthquakes

PubMed Central

Spagnuolo, Elena; Plümper, Oliver; Violay, Marie; Cavallo, Andrea; Di Toro, Giulio

2015-01-01

Rupture fronts can cause fault displacement, reaching speeds up to several ms−1 within a few milliseconds, at any distance away from the earthquake nucleation area. In the case of silicate-bearing rocks the abrupt slip acceleration results in melting at asperity contacts causing a large reduction in fault frictional strength (i.e., flash weakening). Flash weakening is also observed in experiments performed in carbonate-bearing rocks but evidence for melting is lacking. To unravel the micro-physical mechanisms associated with flash weakening in carbonates, experiments were conducted on pre-cut Carrara marble cylinders using a rotary shear apparatus at conditions relevant to earthquakes propagation. In the first 5 mm of slip the shear stress was reduced up to 30% and CO2 was released. Focused ion beam, scanning and transmission electron microscopy investigations of the slipping zones reveal the presence of calcite nanograins and amorphous carbon. We interpret the CO2 release, the formation of nanograins and amorphous carbon to be the result of a shock-like stress release associated with the migration of fast-moving dislocations. Amorphous carbon, given its low friction coefficient, is responsible for flash weakening and promotes the propagation of the seismic rupture in carbonate-bearing fault patches. PMID:26552964

Particle Size, Surface Area, and Amorphous Content as Predictors of Solubility and Bioavailability for Five Commercial Sources of Ferric Orthophosphate in Ready-To-Eat Cereal.

PubMed

Dickmann, Robin S; Strasburg, Gale M; Romsos, Dale R; Wilson, Lori A; Lai, Grace H; Huang, Hsimin

2016-03-01

Ferric orthophosphate (FePO₄) has had limited use as an iron fortificant in ready-to-eat (RTE) cereal because of its variable bioavailability, the mechanism of which is poorly understood. Even though FePO₄ has desirable sensory properties as compared to other affordable iron fortificants, few published studies have well-characterized its physicochemical properties. Semi-crystalline materials such as FePO₄ have varying degrees of molecular disorder, referred to as amorphous content, which is hypothesized to be an important factor in bioavailability. The objective of this study was to systematically measure the physicochemical factors of particle size, surface area, amorphous content, and solubility underlying the variation in FePO₄ bioavailability. Five commercial FePO₄ sources and ferrous sulfate were added to individual batches of RTE cereal. The relative bioavailability value (RBV) of each iron source, determined using the AOAC Rat Hemoglobin Repletion Bioassay, ranged from 51% to 99% (p < 0.05), which is higher than typically reported. Solubility in dilute HCl accurately predicted RBV (R² = 0.93, p = 0.008). Amorphous content measured by Dynamic Vapor Sorption ranged from 1.7% to 23.8% and was a better determinant of solubility (R² = 0.91; p = 0.0002) than surface area (R² = 0.83; p = 0.002) and median particle size (R² = 0.59; p = 0.12). The results indicate that while solubility of FePO₄ is highly predictive of RBV, solubility, in turn, is strongly linked to amorphous content and surface area. This information may prove useful for the production of FePO₄ with the desired RBV.

Particle Size, Surface Area, and Amorphous Content as Predictors of Solubility and Bioavailability for Five Commercial Sources of Ferric Orthophosphate in Ready-To-Eat Cereal

PubMed Central

Dickmann, Robin S.; Strasburg, Gale M.; Romsos, Dale R.; Wilson, Lori A.; Lai, Grace H.; Huang, Hsimin

2016-01-01

Ferric orthophosphate (FePO4) has had limited use as an iron fortificant in ready-to-eat (RTE) cereal because of its variable bioavailability, the mechanism of which is poorly understood. Even though FePO4 has desirable sensory properties as compared to other affordable iron fortificants, few published studies have well-characterized its physicochemical properties. Semi-crystalline materials such as FePO4 have varying degrees of molecular disorder, referred to as amorphous content, which is hypothesized to be an important factor in bioavailability. The objective of this study was to systematically measure the physicochemical factors of particle size, surface area, amorphous content, and solubility underlying the variation in FePO4 bioavailability. Five commercial FePO4 sources and ferrous sulfate were added to individual batches of RTE cereal. The relative bioavailability value (RBV) of each iron source, determined using the AOAC Rat Hemoglobin Repletion Bioassay, ranged from 51% to 99% (p < 0.05), which is higher than typically reported. Solubility in dilute HCl accurately predicted RBV (R2 = 0.93, p = 0.008). Amorphous content measured by Dynamic Vapor Sorption ranged from 1.7% to 23.8% and was a better determinant of solubility (R2 = 0.91; p = 0.0002) than surface area (R2 = 0.83; p = 0.002) and median particle size (R2 = 0.59; p = 0.12). The results indicate that while solubility of FePO4 is highly predictive of RBV, solubility, in turn, is strongly linked to amorphous content and surface area. This information may prove useful for the production of FePO4 with the desired RBV. PMID:26938556

Pressure-induced silica quartz amorphization studied by iterative stochastic surface walking reaction sampling.

PubMed

Zhang, Xiao-Jie; Shang, Cheng; Liu, Zhi-Pan

2017-02-08

The crystal to amorphous transformation is a common phenomenon in Nature and has important impacts on material properties. Our current knowledge on such complex solid transformation processes is, however, limited because of their slow kinetics and the lack of long-range ordering in amorphous structures. To reveal the kinetics in the amorphization of solids, this work, by developing iterative reaction sampling based on the stochastic surface walking global optimization method, investigates the well-known crystal to amorphous transformation of silica (SiO 2 ) under external pressures, the mechanism of which has long been debated for its non-equilibrium, pressure-sensitive kinetics and complex product components. Here we report for the first time the global potential energy surface (PES) and the lowest energy pathways for α-quartz amorphization from first principles. We show that the pressurization at 15 GPa, the reaction condition, can lift the quartz phase energetically close to the amorphous zone, which thermodynamically initializes the amorphization. More importantly, the large flexibility of Si cation coordination (including four, five and six coordination) results in many kinetically competing routes to more stable dense forms, including the known MI, stishovite, newly-identified MII and TI phases. All these pathways have high barriers due to the local Si-O bond breaking and are mediated by amorphous structures with five-fold Si. This causes simultaneous crystal-to-crystal and crystal-to-amorphous transitions. The high barrier and the reconstructive nature of the phase transition are the key kinetics origin for silica amorphization under pressures.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mouro, J.; Gualdino, A.; Chu, V.

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three differentmore » types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.« less

Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.

PubMed

Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H

2015-07-16

Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV).

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays

PubMed Central

Wu, Hao; Tang, Biao; Hayes, Robert A.; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-01-01

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities. PMID:28773826

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays.

PubMed

Wu, Hao; Tang, Biao; Hayes, Robert A; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-08-19

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities.

Nanoscale decomposition of Nb-Ru-O

NASA Astrophysics Data System (ADS)

Music, Denis; Geyer, Richard W.; Chen, Yen-Ting

2016-11-01

A correlative theoretical and experimental methodology has been employed to explore the decomposition of amorphous Nb-Ru-O at elevated temperatures. Density functional theory based molecular dynamics simulations reveal that amorphous Nb-Ru-O is structurally modified within 10 ps at 800 K giving rise to an increase in the planar metal - oxygen and metal - metal population and hence formation of large clusters, which signifies atomic segregation. The driving force for this atomic segregation process is 0.5 eV/atom. This is validated by diffraction experiments and transmission electron microscopy of sputter-synthesized Nb-Ru-O thin films. Room temperature samples are amorphous, while at 800 K nanoscale rutile RuO2 grains, self-organized in an amorphous Nb-O matrix, are observed, which is consistent with our theoretical predictions. This amorphous/crystalline interplay may be of importance for next generation of thermoelectric devices.

Zinc oxide nanowire networks for macroelectronic devices

NASA Astrophysics Data System (ADS)

Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

2009-04-01

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Studies of thin-film growth of sputtered hydrogenated amorphous silicon

NASA Astrophysics Data System (ADS)

Moustakas, T. D.

1982-11-01

The anticipated potential use of hydrogenated amorphous silicon (a-SiHx), or related materials, for large area thin film device applications has stimulated extensive research. Studies conducted by Ross and Messier (1981) have shown that the growth habit of the sputtered a-SiHx films is columnar. It is found that films produced at high argon pressure have columnar microstructure, while those produced at low argon pressure show no noticeable microstructure. The preferred interpretation for the lack of microstructure for the low argon pressure films is bombardment of the films by positive Ar(+) ions due to the substrate negative floating potential. Anderson et al. (1979) attribute the microstructural changes to the bombardment of the film by the neutral sputtered Si species from which the film grows. In connection with the present investigation, data are presented which clearly indicate that charged particle bombardment rather than neutral particle bombardment is the cause of the observed microstructural changes as a function of argon pressure.

Amorphous cobalt potassium phosphate microclusters as efficient photoelectrochemical water oxidation catalyst

NASA Astrophysics Data System (ADS)

Zhang, Ye; Zhao, Chunsong; Dai, Xuezeng; Lin, Hong; Cui, Bai; Li, Jianbao

2013-12-01

A novel amorphous cobalt potassium phosphate hydrate compound (KCoPO4·H2O) is identified to be active photocatalyst for oxygen evolution reaction (OER) to facilitate hydrogen generation from water photolysis. It has been synthesized through a facile and cost-effective solution-based precipitation method using earth-abundant materials. Its highly porous structure and large surface areas are found to be responsible for the excellent electrochemical performance featuring a low OER onset at ∼550 mVSCE and high current density in alkaline condition. Unlike traditional cobalt-based spinel oxides (Co3O4, NiCo2O4) and phosphate (Co-Pi, Co(PO3)2) electrocatalysts, with proper energy band alignment for light-assisted water oxidation, cobalt potassium phosphate hydrate also exhibits robust visible-light response, generating a photocurrent density of ∼200 μA cm-2 at 0.7 VSCE. This catalyst could thus be considered as a promising candidate to perform photoelectrochemical water splitting.

Physical processes of quartz amorphization due to friction

NASA Astrophysics Data System (ADS)

Nakamura, Y.; Muto, J.; Nagahama, H.; Miura, T.; Arakawa, I.; Shimizu, I.

2011-12-01

Solid state amorphization of minerals occurs in indentations, in shock experiments, and in high pressure metamorphic quartz rock. A production of amorphous material is also reported in experimentally created silicate gouges (Yund et al., 1990), and in San Andreas Fault core samples (Janssen et al., 2010). Rotary-shear friction experiments of quartz rocks imply dynamic weakening at seismic rates (Di Toro et al., 2004). These experiments have suggested that weakening is caused by formation and thixotropic behavior of a silica gel layer which comprises of very fine particles of hydrated amorphous silica on fault gouges (Goldsby & Tullis, 2002; Hayashi & Tsutsumi, 2010). Therefore, physical processes of amorphization are important to better understand weakening of quartz bearing rocks. In this study, we conducted a pin-on-disk friction experiment to investigate details of quartz amorphization (Muto et al, 2007). Disks were made of single crystals of synthetic and Brazilian quartz. The normal load F and sliding velocity V were ranged from 0.01 N to 1 N and from 0.01 m/s to 2.6 m/s, respectively. The friction was conducted using quartz and diamond pins (curvature radii of 0.2 ~ 3 mm) to large displacements (> 1000 m) under controlled atmosphere. We analyzed experiment samples by Raman spectroscopy and FT-IR. Raman spectroscopy (excitation wavelength 532.1 nm) provides lattice vibration modes, and was used to investigate the degree of amorphization of samples. Raman spectra of friction tracks on the disk show clear bands at wavenumbers of 126, 204, 356, 394, and 464 cm-1, characteristic of intact α-quartz. Remarkably, in experiments using diamond pins (F = 0.8 N, normal stress σr calculated by contact area = 293 ~ 440 MPa, V = 0.12 ~ 0.23 m/s), the bands at 204 and 464 cm-1 gradually broaden to reveal shoulders on the higher-wavenumber sides of these peaks. Especially, two distinguished peaks at 490 and 515 cm-1 and a weak broad peak at 606 cm-1 appear sporadically on the track after the slip distance of 43 m. The bands at 490 and 606 cm-1 can be assigned to the symmetric stretching of four-membered Si-O ring (D1 band) and planar three-membered Si-O ring (D2 band) in amorphous silica, respectively. The peak at 515 cm-1 corresponds to the strongest coesite A1 mode arising from four-membered Si-O ring structure. On the other hand, the bands at 464 cm-1 broaden to reveal a shoulder adjacent to the main peak in experiments using quartz pins (F = 1 N, σr = 1 MPa, V = 0.01 ~ 2.6 m/s) after a large displacement (>1000m). These results indicate that quartz change intermediate range structure of SiO2 network during friction, and four or three-membered Si-O rings gradually increase in six-membered quartz. The results of FT-IR analyses on friction tracks showed a broad peak at 3000 -3600 cm-1 which indicates the -OH symmetric stretching band of molecular H2O. It shows that hydration of quartz on friction tracks occur due to friction. The results of Raman spectroscopy and FT-IR imply that Si-O-Si bridging of strained rings preferentially react with water to form hydrated amorphous silica layer on friction surfaces, which is likely to occur weakening.

Phase transformations in 40-60-GPa shocked gneisses from the Haughton Crater (Canada): An Analytical Transmission Electron Microscopy (ATEM) study

NASA Technical Reports Server (NTRS)

Martinez, I.; Guyot, F.; Schaerer, U.

1992-01-01

In order to better understand phase transformations, chemical migration, and isotopic disequilibrium in highly shocked rocks, we have performed a microprobe and an ATEM study on gneisses shocked up to 60 GPa from the Haughton Crater. This study reveals the following chemical and structural characteristics: (1) SiO2 dominant areas are formed by a mixture of pure SiO2 polycrystalline quartz identified by electron diffraction pattern and chemical analysis and a silica-rich amorphous phase containing minor amounts of aluminium, potassium, and iron; (2) Areas with biotitelike composition are formed by less than 200-nm grains of iron-rich spinels embedded in a silica-rich amorphous phase that is very similar to the one described above; (3) Layers with feldsparlike composition are constituted by 100-200-nm-sized alumina-rich grains (the indexation of the crystalline structure is under progress) and the silica-rich amorphous phase; (4) Zones characterized by the unusual Al/Si ratio close to 1 are formed by spinel grains (200-nm-sized) embedded in the same silica-rich amorphous phase; and (5) The fracturated sillimanites contain domains with a lamellar structure, defined by the intercalation of 100-nm-wide lamellae of mullite crystals and of a silica-rich amorphous phase. These mullite crystals preserved the crystallographical orientation of the preshock sillimanite. All compositional domains, identified at the microprobe scale, can thus be explained by a mixture in different proportion between the following phases: (1) a silica-rich amorphous phase, with minor Al and K; (2) quartz crystals; (3) spinel crystals and alumina-rich crystals; (4) sillimanite; and (5) mullite. Such mixtures of amorphous phases and crystals in different proportions explain disturbed isotope systems in these rocks and chemical heterogeneities observed on the microprobe.

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

NASA Astrophysics Data System (ADS)

Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

2016-07-01

Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon.

PubMed

Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

2016-07-01

Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

Amorphous titanium-oxide supercapacitors.

PubMed

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-21

The electric capacitance of an amorphous TiO 2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm 2 , accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO 2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

Amorphous titanium-oxide supercapacitors

NASA Astrophysics Data System (ADS)

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-01

The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

Glassy formation ability, magnetic properties and magnetocaloric effect in Al27Cu18Er55 amorphous ribbon

NASA Astrophysics Data System (ADS)

Li, Lingwei; Xu, Chi; Yuan, Ye; Zhou, Shengqiang

2018-05-01

In this work, we have fabricated the Al27Cu18Er55 amorphous ribbon with good glassy formation ability by melt-spinning technology. A broad paramagnetic (PM) to ferromagnetic (FM) transition (second ordered) together with a large reversible magnetocaloric effect (MCE) in Al27Cu18Er55 amorphous ribbon was observed around the Curie temperature TC ∼ 11 K. Under the magnetic field change (ΔH of 0-7 T, the values of MCE parameter of the maximum magnetic entropy change (-ΔSMmax) and refrigerant capacity (RC) for Al27Cu18Er55 amorphous ribbon reach 21.4 J/kg K and 599 J/kg, respectively. The outstanding glass forming ability as well as the excellent magneto-caloric properties indicate that Al27Cu18Er55 amorphous could be a good candidate for low temperature magnetic refrigeration.

Photochemical route for accessing amorphous metal oxide materials for water oxidation catalysis.

PubMed

Smith, Rodney D L; Prévot, Mathieu S; Fagan, Randal D; Zhang, Zhipan; Sedach, Pavel A; Siu, Man Kit Jack; Trudel, Simon; Berlinguette, Curtis P

2013-04-05

Large-scale electrolysis of water for hydrogen generation requires better catalysts to lower the kinetic barriers associated with the oxygen evolution reaction (OER). Although most OER catalysts are based on crystalline mixed-metal oxides, high activities can also be achieved with amorphous phases. Methods for producing amorphous materials, however, are not typically amenable to mixed-metal compositions. We demonstrate that a low-temperature process, photochemical metal-organic deposition, can produce amorphous (mixed) metal oxide films for OER catalysis. The films contain a homogeneous distribution of metals with compositions that can be accurately controlled. The catalytic properties of amorphous iron oxide prepared with this technique are superior to those of hematite, whereas the catalytic properties of a-Fe(100-y-z)Co(y)Ni(z)O(x) are comparable to those of noble metal oxide catalysts currently used in commercial electrolyzers.

Nanocrystalline zirconia can be amorphized by ion irradiation.

PubMed

Meldrum, A; Boatner, L A; Ewing, R C

2002-01-14

Nanocrystalline composites are finding applications in high-radiation environments due to their excellent mechanical and electronic properties. We show, however, that at the smallest particle sizes, radiation damage effects can be so strongly enhanced that under the right conditions, materials that have never been made amorphous can become highly susceptible to irradiation-induced amorphization. Because light-weight, high-strength nanocomposites are potential materials for spacecraft shielding and sensor systems, these fundamental results have significant implications for the design and selection of materials to be used in environments where a large ion flux will be encountered.

Polarizable atomistic calculation of site energy disorder in amorphous Alq3.

PubMed

Nagata, Yuki

2010-02-01

A polarizable molecular dynamics simulation and calculation scheme for site energy disorder is presented in amorphous tris(8-hydroxyquinolinato)aluminum (Alq(3)) by means of the charge response kernel (CRK) method. The CRK fit to the electrostatic potential and the tight-binding approximation are introduced, which enables modeling of the polarizable electrostatic interaction for a large molecule systematically from an ab initio calculation. The site energy disorder for electron and hole transfers is calculated in amorphous Alq(3) and the effect of the polarization on the site energy disorder is discussed.

Clathrate hydrate formation in amorphous cometary ice analogs in vacuo

NASA Technical Reports Server (NTRS)

Blake, David; Allamandola, Louis; Sandford, Scott; Hudgins, Doug; Freund, Friedemann

1991-01-01

Experiments conducted in clathrate hydrates with a modified electron microscope have demonstrated the possibility of such compounds' formation during the warming of vapor-deposited amorphous ices in vacuo, through rearrangements in the solid state. Subsolidus crystallization of compositionally complex amorphous ices may therefore be a general and ubiquitous process. Phase separations and microporous textures thus formed may be able to account for such anomalous cometary phenomena as the release of gas at large radial distances from the sun and the retention of volatiles to elevated temperatures.

Optical switching system and method

DOEpatents

Ranganathan, Radha; Gal, Michael; Taylor, P. Craig

1992-01-01

An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

NASA Astrophysics Data System (ADS)

Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

2013-08-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films.

PubMed

Nikitin, Timur; Khriachtchev, Leonid

2015-04-22

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si-SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ∼300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

PubMed Central

Nikitin, Timur; Khriachtchev, Leonid

2015-01-01

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas. PMID:28347028

Effect of radiation-induced amorphization on smectite dissolution.

PubMed

Fourdrin, C; Allard, T; Monnet, I; Menguy, N; Benedetti, M; Calas, G

2010-04-01

Effects of radiation-induced amorphization of smectite were investigated using artificial irradiation. Beams of 925 MeV Xenon ions with radiation dose reaching 73 MGy were used to simulate the effects generated by alpha recoil nuclei or fission products in the context of high level nuclear waste repository. Amorphization was controlled by X-ray diffraction, transmission electron microscopy, and Fourier transform infrared spectroscopy. An important coalescence of the smectite sheets was observed which lead to a loss of interparticle porosity. The amorphization is revealed by a loss of long-range structure and accompanied by dehydroxylation. The dissolution rate far-from-equilibrium shows that the amount of silica in solution is two times larger in the amorphous sample than in the reference clay, a value which may be enhanced by orders of magnitude when considering the relative surface area of the samples. Irradiation-induced amorphization thus facilitates dissolution of the clay-derived material. This has to be taken into account for the safety assessment of high level nuclear waste repository, particularly in a scenario of leakage of the waste package which would deliver alpha emitters able to amorphize smectite after a limited period of time.

Analysis of the effect of CPP-ACP tooth mousse on enamel remineralization by circularly polarized images.

PubMed

Wu, Guotao; Liu, Xinqiang; Hou, Yongfu

2010-09-01

To evaluate the effect of casein phosphopeptide-amorphous calcium phosphate tooth mousse on the remineralization of bovine incisor by circularly polarized images. Eighty bovine incisors, each with a 4 x 4 mm artificially demineralized area, were used. The samples were divided into four groups: Group A, casein phosphopeptide-amorphous calcium phosphate tooth mousse; Group B, fluoride toothpaste; Group C, casein phosphopeptide-amorphous calcium phosphate tooth mousse and fluoride toothpaste; and Group D, no treatment. Circularly polarized images were taken after the specimens were treated for 3, 6, 9, or 12 weeks, and the size of the demineralized area and the mean grey level were measured. Data analysis was done using repeated measures variance analysis. Pearson correlation coefficients were computed to evaluate the correlation between the size of the demineralized area and the mean grey level. In all four groups, the size of the demineralized area and the mean grey level declined with time. The size of the demineralized area of Group C was significantly smaller than that of Group A at the end of the third and sixth weeks (P = .039, P = .000, respectively), and the mean grey level of Group C was lower than that of Group A at the end of the 6th and 12th weeks (P = .037, P = .004, respectively). At the end of the 6th, 9th, and 12th weeks, the size of the demineralized area of Group C was smaller (P = .000, P = .005, P = .005, respectively) and the mean grey level was lower (P = .000) than those of Group B. No statistically significant correlations were detected between the size of the demineralized area and the mean grey level. Casein phosphopeptide-amorphous calcium phosphate tooth mousse can reduce the size and mean grey level of demineralized areas and promote the remineralization of bovine enamel. Combined application with fluoride toothpaste strengthens the effect.

Morphological analysis of GeTe in inline phase change switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less

Amorphous calcium carbonate controls avian eggshell mineralization: A new paradigm for understanding rapid eggshell calcification.

PubMed

Rodríguez-Navarro, Alejandro B; Marie, Pauline; Nys, Yves; Hincke, Maxwell T; Gautron, Joel

2015-06-01

Avian eggshell mineralization is the fastest biogenic calcification process known in nature. How this is achieved while producing a highly crystalline material composed of large calcite columnar single crystals remains largely unknown. Here we report that eggshell mineral originates from the accumulation of flat disk-shaped amorphous calcium carbonate (ACC) particles on specific organic sites on the eggshell membrane, which are rich in proteins and sulfated proteoglycans. These structures known as mammillary cores promote the nucleation and stabilization of a amorphous calcium carbonate with calcitic short range order which predetermine the calcite composition of the mature eggshell. The amorphous nature of the precursor phase was confirmed by the diffuse scattering of X-rays and electrons. The nascent calcitic short-range order of this transient mineral phase was revealed by infrared spectroscopy and HRTEM. The ACC mineral deposited around the mammillary core sites progressively transforms directly into calcite crystals without the occurrence of any intermediate phase. Ionic speciation data suggest that the uterine fluid is equilibrated with amorphous calcium carbonate, throughout the duration of eggshell mineralization process, supporting that this mineral phase is constantly forming at the shell mineralization front. On the other hand, the transient amorphous calcium carbonate mineral deposits, as well as the calcite crystals into which they are converted, form by the ordered aggregation of nanoparticles that support the rapid mineralization of the eggshell. The results of this study alter our current understanding of avian eggshell calcification and provide new insights into the genesis and formation of calcium carbonate biominerals in vertebrates. Copyright © 2015 Elsevier Inc. All rights reserved.

Study of Amorphous Ferrimagnet Fe0.66Er0.19B0.15 by Means of Monochromatic Circularly Polarised Source

NASA Astrophysics Data System (ADS)

Kalska, B.; Szymański, K.; Dobrzyński, L.; Satuła, D.; Wäppling, R.; Broddefalk, A.; Nordblad, P.

2002-06-01

Properties of amorphous alloy Fe0.66Er0.19B0.15 are reported. A reorientation of the Fe and Er magnetic moments during sample cooling through the compensation point in a large magnetic field is found by means of monochromatic circularly polarised radiation.

Amorphous ZnO Quantum Dot/Mesoporous Carbon Bubble Composites for a High-Performance Lithium-Ion Battery Anode.

PubMed

Tu, Zhiming; Yang, Gongzheng; Song, Huawei; Wang, Chengxin

2017-01-11

Due to its high theoretical capacity (978 mA h g -1 ), natural abundance, environmental friendliness, and low cost, zinc oxide is regarded as one of the most promising anode materials for lithium-ion batteries (LIBs). A lot of research has been done in the past few years on this topic. However, hardly any research on amorphous ZnO for LIB anodes has been reported despite the fact that the amorphous type could have superior electrochemical performance due to its isotropic nature, abundant active sites, better buffer effect, and different electrochemical reaction details. In this work, we develop a simple route to prepare an amorphous ZnO quantum dot (QDs)/mesoporous carbon bubble composite. The composite consists of two parts: mesoporous carbon bubbles as a flexible skeleton and monodisperse amorphous zinc oxide QDs (smaller than 3 nm) encapsulated in an amorphous carbon matrix as a continuous coating tightly anchored on the surface of mesoporous carbon bubbles. With the benefits of abundant active sites, amorphous nature, high specific surface area, buffer effect, hierarchical pores, stable interconnected conductive network, and multidimensional electron transport pathways, the amorphous ZnO QD/mesoporous carbon bubble composite delivers a high reversible capacity of nearly 930 mA h g -1 (at current density of 100 mA g -1 ) with almost 90% retention for 85 cycles and possesses a good rate performance. This work opens the possibility to fabricate high-performance electrode materials for LIBs, especially for amorphous metal oxide-based materials.

Molecular Factors Governing the Liquid and Glassy States Recrystallization of Celecoxib in Binary Mixtures with Excipients of Different Molecular Weights.

PubMed

Grzybowska, K; Chmiel, K; Knapik-Kowalczuk, J; Grzybowski, A; Jurkiewicz, K; Paluch, M

2017-04-03

Transformation of poorly water-soluble crystalline pharmaceuticals to the amorphous form is one of the most promising strategies to improve their oral bioavailability. Unfortunately, the amorphous drugs are usually thermodynamically unstable and may quickly return to their crystalline form. A very promising way to enhance the physical stability of amorphous drugs is to prepare amorphous compositions of APIs with certain excipients which can be characterized by significantly different molecular weights, such as polymers, acetate saccharides, and other APIs. By using different experimental techniques (broadband dielectric spectroscopy, differential scanning calorimetry, X-ray diffraction) we compare the effect of adding the large molecular weight polymer-polyvinylpyrrolidone (PVP K30)-and the small molecular weight excipient-octaacetylmaltose (acMAL)-on molecular dynamics as well as the tendency to recrystallization of the amorphous celecoxib (CEL) in the amorphous solid dispersions: CEL-PVP and CEL-acMAL. The physical stability investigations of the binary systems were performed in both the supercooled liquid and glassy states. We found that acMAL is a better inhibitor of recrystallization of amorphous CEL than PVP K30 deep in the glassy state (T < T g ). In contrast, PVP K30 is a better crystallization inhibitor of CEL than acMAL in the supercooled liquid state (at T > T g ). We discuss molecular factors governing the recrystallization of amorphous CEL in examined solid dispersions.

Composition-Dependent Morphology of Bi- and Trimetallic Phosphides: Construction of Amorphous Pd-Cu-Ni-P Nanoparticles as a Selective and Versatile Catalyst.

PubMed

Zhao, Ming; Ji, Yuan; Wang, Mengyue; Zhong, Ning; Kang, Zinan; Asao, Naoki; Jiang, Wen-Jie; Chen, Qiang

2017-10-11

Amorphous materials have been widely researched in heterogeneous catalysis and for next-generation batteries. However, the well-defined production of high-quality (e.g., monodisperse and high surface area) amorphous alloy nanomaterials has rarely been reported. In this work, we investigated the correlations among the composition, morphology, and catalysis of various Pd-M-P nanoparticles (NPs) (M = Cu or Ni), which indicated that less Cu (≤20 atom %) was necessary for the formation of an amorphous morphology. The amorphous Pd-Cu-Ni-P NPs were fabricated with a controllable size and characterized carefully, which show excellent selective catalysis in the semihydrogenation of alkynes, hydrogenation of quinoline, and oxidation of primary alcohols. The uniqueness of the catalytic performance was confirmed by control experiments with monometallic Pd, amorphous Pd-Ni-P NPs, crystalline Pd-Cu-P NPs, and a crystalline counterpart of Pd-Cu-Ni-P catalyst. The catalytic selectivity likely arose from improved Pd-M (M = Cu or Ni) synergistic effects in the amorphous phase and the electron deficiency of Pd. The model reactions proceeded under H 2 or O 2 gas without any additives, bases, or metal oxide supports, and the catalyst could be reused several times. This report is expected to shed light on the design of amorphous alloy nanomaterials as green and inexpensive catalysts for atom-economic and selective reactions.

Sea urchin spine calcite forms via a transient amorphous calcium carbonate phase.

PubMed

Politi, Yael; Arad, Talmon; Klein, Eugenia; Weiner, Steve; Addadi, Lia

2004-11-12

The skeletons of adult echinoderms comprise large single crystals of calcite with smooth convoluted fenestrated morphologies, raising many questions about how they form. By using water etching, infrared spectroscopy, electron diffraction, and environmental scanning electron microscopy, we show that sea urchin spine regeneration proceeds via the initial deposition of amorphous calcium carbonate. Because most echinoderms produce the same type of skeletal material, they probably all use this same mechanism. Deposition of transient amorphous phases as a strategy for producing single crystals with complex morphology may have interesting implications for the development of sophisticated materials.

Shear Induced Structural Relaxation in a Supercooled Colloidal Liquid

NASA Astrophysics Data System (ADS)

Chen, Dandan; Semwogerere, Denis; Weeks, Eric R.

2009-11-01

Amorphous materials include many common products we use everyday, such as window glass, moisturizer, shaving cream and peanut butter. These materials have liquid-like disordered structure, but keep their shapes like a solid. The rheology of dense amorphous materials under large shear strain is not fully understood, partly due to the difficulty of directly viewing the microscopic details of such materials. We use a colloidal suspension to simulate amorphous materials, and study the shear- induced structural relaxation with fast confocal microscopy. We quantify the plastic rearrangements of the particles using standard analysis techniques based on the motion of the particles.

Investigation of superconducting interactions and amorphous semiconductors

NASA Technical Reports Server (NTRS)

Janocko, M. A.; Jones, C. K.; Gavaler, J. R.; Deis, D. W.; Ashkin, M.; Mathur, M. P.; Bauerle, J. E.

1972-01-01

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Accelerated stress testing of amorphous silicon solar cells

NASA Technical Reports Server (NTRS)

Stoddard, W. G.; Davis, C. W.; Lathrop, J. W.

1985-01-01

A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

A Novel High-Density Phase and Amorphization of Nitrogen-Rich 1H-Tetrazole (CH2N4) under High Pressure

PubMed Central

Li, Wenbo; Huang, Xiaoli; Bao, Kuo; Zhao, Zhonglong; Huang, Yanping; Wang, Lu; Wu, Gang; Zhou, Bo; Duan, Defang; Li, Fangfei; Zhou, Qiang; Liu, Bingbing; Cui, Tian

2017-01-01

The high-pressure behaviors of nitrogen-rich 1H-tetrazole (CH2N4) have been investigated by in situ synchrotron X-ray diffraction (XRD) and Raman scattering up to 75 GPa. A first crystalline-to-crystalline phase transition is observed and identified above ~3 GPa with a large volume collapse (∼18% at 4.4 GPa) from phase I to phase II. The new phase II forms a dimer-like structure, belonging to P1 space group. Then, a crystalline-to-amorphous phase transition takes place over a large pressure range of 13.8 to 50 GPa, which is accompanied by an interphase region approaching paracrystalline state. When decompression from 75 GPa to ambient conditions, the final product keeps an irreversible amorphous state. Our ultraviolet (UV) absorption spectrum suggests the final product exhibits an increase in molecular conjugation. PMID:28218236

A Novel High-Density Phase and Amorphization of Nitrogen-Rich 1H-Tetrazole (CH2N4) under High Pressure.

PubMed

Li, Wenbo; Huang, Xiaoli; Bao, Kuo; Zhao, Zhonglong; Huang, Yanping; Wang, Lu; Wu, Gang; Zhou, Bo; Duan, Defang; Li, Fangfei; Zhou, Qiang; Liu, Bingbing; Cui, Tian

2017-02-20

The high-pressure behaviors of nitrogen-rich 1H-tetrazole (CH 2 N 4 ) have been investigated by in situ synchrotron X-ray diffraction (XRD) and Raman scattering up to 75 GPa. A first crystalline-to-crystalline phase transition is observed and identified above ~3 GPa with a large volume collapse (∼18% at 4.4 GPa) from phase I to phase II. The new phase II forms a dimer-like structure, belonging to P1 space group. Then, a crystalline-to-amorphous phase transition takes place over a large pressure range of 13.8 to 50 GPa, which is accompanied by an interphase region approaching paracrystalline state. When decompression from 75 GPa to ambient conditions, the final product keeps an irreversible amorphous state. Our ultraviolet (UV) absorption spectrum suggests the final product exhibits an increase in molecular conjugation.

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radnóczi, G. Z.; Battistig, G.; Pécz, B., E-mail: pecz.bela@ttk.mta.hu

2015-02-17

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a secondmore » region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.« less

Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel

PubMed Central

Zhang, Zhenyu; Guo, Liangchao; Cui, Junfeng; Wang, Bo; Kang, Renke; Guo, Dongming

2016-01-01

Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 μm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding. PMID:27734934

Recent Progress in Some Amorphous Materials for Supercapacitors.

PubMed

Li, Qing; Xu, Yuxia; Zheng, Shasha; Guo, Xiaotian; Xue, Huaiguo; Pang, Huan

2018-05-14

A breakthrough in technologies having "green" and sustainable energy storage conversion is urgent, and supercapacitors play a crucial role in this area of research. Owing to their unique porous structure, amorphous materials are considered one of the best active materials for high-performance supercapacitors due to their high specific capacity, excellent cycling stability, and fast charging rate. This Review summarizes the synthesis of amorphous materials (transition metal oxides, carbon-based materials, transition metal sulfides, phosphates, hydroxides, and their complexes) to highlight their electrochemical performance in supercapacitors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

NASA Astrophysics Data System (ADS)

Barquinha, Pedro Miguel Candido

This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to have amorphous oxides suitable to be used either as transparent semiconductors or as highly conducting electrodes. The amorphous structure, which is maintained even if the thin films are annealed at 500 °C, brings great advantages concerning interface quality and uniformity in large areas. A complete study comprising different deposition conditions of the semiconductor layer is also made regarding TFT electrical performance. Optimized devices present outstanding electrical performance, such as field-effect mobility (muFE) exceeding 20 cm2 V -1 s-1, turn-on voltage (Von) between -1 and 1 V, subthreshold slope (S) lower than 0.25 V dec-1 and On-Off ratio above 107 . Devices employing amorphous multicomponent oxides present largely improved properties when compared with the ones based on polycrystalline ZnO, mostly in terms of muFE. Within the compositional range where IZO and GIZO films are amorphous, TFT performance can be largely adjusted: for instance, high indium contents favor large mu FE but also highly negative Von, which can be compensated by proper amounts of zinc and gallium. Large oxygen concentrations during oxide semiconductor sputtering are found to be deleterious, decreasing muFE, shifting Von towards high values and turning the devices electrically unstable. It is also shown that semiconductor thickness (ds) has a very important role: for instance, by reducing ds to 10 nm it is possible to produce TFTs with Von≈0 V even using deposition conditions and/or target compositions that normally yield highly conducting films. Given the low ds of the films, this behavior is mostly related with surface states existent at the oxide semiconductor air-exposed back-surface, where depletion layers that can extend towards the dielectric/semiconductor interface are created due to the interaction with atmospheric oxygen. Different passivation layers on top of this air-exposed surface are studied, with SU-8 revealing to be to most effective one. Other important topics are source-drain contact resistance assessment and the effect of different annealing temperatures ( TA), being the properties of the TFTs dominated by TA rather than by the deposition conditions as TA increases. Fully transparent TFTs employing sputtered amorphous multicomponent dielectrics produced without intentional substrate heating present excellent electrical properties, that approach those exhibited by devices using PECVD SiO2 produced at 400 °C. Gate leakage current can be greatly reduced by using tantalum-silicon or tantalum-aluminum oxides rather than Ta2O5. A section of this dissertation is also devoted to the analysis of current stress stability and aging effects of the TFTs, being found that optimal devices exhibit recoverable threshold voltage shifts lower than 0.50 V after 24 h stress with constant drain current of 10 muA, as well as negligible aging effects during 18 months. The research work of this dissertation culminates in the fabrication of a backplane employing transparent TFTs and subsequent integration with a LCD frontplane by Hewlett-Packard. The successful operation of this initial 2.8h prototype with 128x128 pixels provides a solid demonstration that oxide semiconductor-based TFTs have the potential to largely contribute to a novel electronics era, where semiconductor materials away from conventional silicon are used to create fascinating applications, such as transparent electronic products.

The liquid⟷amorphous transition and the high pressure phase diagram of carbon

NASA Astrophysics Data System (ADS)

Robinson, David R.; Wilson, Mark

2013-04-01

The phase diagram of carbon is mapped to high pressure using a computationally-tractable potential model. The use of a relatively simple (Tersoff-II) potential model allows a large range of phase space to be explored. The coexistence (melting) curve for the diamond crystal/liquid dyad is mapped directly by modelling the solid/liquid interfaces. The melting curve is found to be re-entrant and belongs to a conformal class of diamond/liquid coexistence curves. On supercooling the liquid a phase transition to a tetrahedral amorphous form (ta-C) is observed. The liquid ⟷ amorphous coexistence curve is mapped onto the pT plane and is found to also be re-entrant. The entropy changes for both melting and the amorphous ⟶ liquid transitions are obtained from the respective coexistence curves and the associated changes in molar volume. The structural change on amorphization is analysed at different points on the coexistence curve including for transitions that are both isochoric and isocoordinate (no change in nearest-neighbour coordination number). The conformal nature of the melting curve is highlighted with respect to the known behaviour of Si. The relationship of the observed liquid/amorphous coexistence curve to the Si low- and high-density amorphous (LDA/HDA) transition is discussed.

Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

NASA Astrophysics Data System (ADS)

Zhou, Dong; Wu, Liangcai; Wen, Lin; Ma, Liya; Zhang, Xingyao; Li, Yudong; Guo, Qi; Song, Zhitang

2018-04-01

The electron-beam-irradiation-induced crystallization of phase change materials in a nano sized area was studied by in situ transmission electron microscopy and selected area electron diffraction. Amorphous phase change materials changed to a polycrystalline state after being irradiated with a 200 kV electron beam for a long time. The results indicate that the crystallization temperature strongly depends on the difference in the heteronuclear bond enthalpy of the phase change materials. The selected area electron diffraction patterns reveal that Ge2Sb2Te5 is a nucleation-dominated material, when Si2Sb2Te3 and Ti0.5Sb2Te3 are growth-dominated materials.

Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials.

PubMed

Zhukovskyi, Maksym; Plashnitsa, Vladimir; Petchsang, Nattasamon; Ruth, Anthony; Bajpai, Anshumaan; Vietmeyer, Felix; Wang, Yuanxing; Brennan, Michael; Pang, Yunsong; Werellapatha, Kalpani; Bunker, Bruce; Chattopadhyay, Soma; Luo, Tengfei; Janko, Boldizsar; Fay, Patrick; Kuno, Masaru

2017-06-14

We report for the first time the synthesis of large, free-standing, Mo 2 O 2 (μ-S) 2 (Et 2 dtc) 2 (MoDTC) nanosheets (NSs), which exhibit an electron-beam induced crystalline-to-amorphous phase transition. Both electron beam ionization and femtosecond (fs) optical excitation induce the phase transition, which is size-, morphology-, and composition-preserving. Resulting NSs are the largest, free-standing regularly shaped two-dimensional amorphous nanostructures made to date. More importantly, amorphization is accompanied by dramatic changes to the NS electrical and optical response wherein resulting amorphous species exhibit room-temperature conductivities 5 orders of magnitude larger than those of their crystalline counterparts. This enhancement likely stems from the amorphization-induced formation of sulfur vacancy-related defects and is supported by temperature-dependent transport measurements, which reveal efficient variable range hopping. MoDTC NSs represent one instance of a broader class of transition metal carbamates likely having applications because of their intriguing electrical properties as well as demonstrated ability to toggle metal oxidation states.

Atom-Level Understanding of the Sodiation Process in Silicon Anode Material.

PubMed

Jung, Sung Chul; Jung, Dae Soo; Choi, Jang Wook; Han, Young-Kyu

2014-04-03

Despite the exceptionally large capacities in Li ion batteries, Si has been considered inappropriate for applications in Na ion batteries. We report an atomic-level study on the applicability of a Si anode in Na ion batteries using ab initio molecular dynamics simulations. While crystalline Si is not suitable for alloying with Na atoms, amorphous Si can accommodate 0.76 Na atoms per Si atom, corresponding to a specific capacity of 725 mA h g(-1). Bader charge analyses reveal that the sodiation of an amorphous Si electrode continues until before the local Na-rich clusters containing neutral Na atoms are formed. The amorphous Na0.76Si phase undergoes a volume expansion of 114% and shows a Na diffusivity of 7 × 10(-10) cm(2) s(-1) at room temperature. Overall, the amorphous Si phase turns out quite attractive in performance compared to other alloy-type anode materials. This work suggests that amorphous Si might be a competitive candidate for Na ion battery anodes.

Disorder-induced amorphization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lam, N.Q.; Okamoto, P.R.; Li, Mo

1997-03-01

Many crystalline materials undergo a crystalline-to-amorphous (c-a) phase transition when subjected to energetic particle irradiation at low temperatures. By focusing on the mean-square static atomic displacement as a generic measure of chemical and topological disorder, we are led quite naturally to a generalized version of the Lindemann melting criterion as a conceptual framework for a unified thermodynamic approach to solid-state amorphizing transformations. In its simplest form, the generalized Lindemann criterion assumes that the sum of the static and dynamic mean-square atomic displacements is constant along the polymorphous melting curve so that c-a transformations can be understood simply as melting ofmore » a critically-disordered crystal at temperatures below the glass transition temperature where the supercooled liquid can persist indefinitely in a configurationally-frozen state. Evidence in support of the generalized Lindemann melting criterion for amorphization is provided by a large variety of experimental observations and by molecular dynamics simulations of heat-induced melting and of defect-induced amorphization of intermetallic compounds.« less

Excess electrons in ice: a density functional theory study.

PubMed

Bhattacharya, Somesh Kr; Inam, Fakharul; Scandolo, Sandro

2014-02-21

We present a density functional theory study of the localization of excess electrons in the bulk and on the surface of crystalline and amorphous water ice. We analyze the initial stages of electron solvation in crystalline and amorphous ice. In the case of crystalline ice we find that excess electrons favor surface states over bulk states, even when the latter are localized at defect sites. In contrast, in amorphous ice excess electrons find it equally favorable to localize in bulk and in surface states which we attribute to the preexisting precursor states in the disordered structure. In all cases excess electrons are found to occupy the vacuum regions of the molecular network. The electron localization in the bulk of amorphous ice is assisted by its distorted hydrogen bonding network as opposed to the crystalline phase. Although qualitative, our results provide a simple interpretation of the large differences observed in the dynamics and localization of excess electrons in crystalline and amorphous ice films on metals.

Amorphization of Ta2O5 under swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Cusick, Alex B.; Lang, Maik; Zhang, Fuxiang; Sun, Kai; Li, Weixing; Kluth, Patrick; Trautmann, Christina; Ewing, Rodney C.

2017-09-01

Crystalline Ta2O5 powder is shown to amorphize under 2.2 GeV 197Au ion irradiation. Synchrotron X-ray diffraction (XRD), Raman spectroscopy, small-angle X-ray scattering (SAXS), and transmission electron microscopy (TEM) were used to characterize the structural transition from crystalline to fully-amorphous. Based on Rietveld refinement of XRD data, the initial structure is orthorhombic (P2mm) with a very large unit cell (a = 6.20, b = 40.29, c = 3.89 Å; V = 971.7 Å3), ideally containing 22 Ta and 55 O atoms. At a fluence of approximately 3 × 1011 ions/cm2, a diffuse amorphous background becomes evident, increasing in intensity relative to diffraction maxima until full amorphization is achieved at approximately 3 × 1012 ions/cm2. An anisotropic distortion of the orthorhombic structure occurred during the amorphization process, with an approximately constant unit cell volume. The amorphous phase fraction as a function of fluence was determined, yielding a trend that is consistent with a direct-impact model for amorphization. SAXS and TEM data indicate that ion tracks exhibit a core-shell morphology. Raman data show that the amorphous phase is comprised of TaO6 and TaO5 coordination-polyhedra in contrast to the TaO6 and TaO7 units that exist in crystalline Ta2O5. Analysis of Raman data shows that oxygen-deficiency increases with fluence, indicating a loss of oxygen that leads to an estimated final stoichiometry of Ta2O4.2 at a fluence of 1 × 1013 ions/cm2.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

Hypervelocity nanoparticle impacts on free-standing graphene: A sui generis mode of sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eller, Michael J.; Della-Negra, Serge; Liang, Chao-Kai

The study of the interaction of hypervelocity nano-particles with a 2D material and ultra-thin targets (single layer graphene, multi-layer graphene, and amorphous carbon foils) has been performed using mass selected gold nano-particles produced from a liquid metal ion source. During these impacts, a large number of atoms are ejected from the graphene, corresponding to a hole of ∼60 nm{sup 2}. Additionally, for the first time, secondary ions have been observed simultaneously in both the transmission and reflection direction (with respect to the path of the projectile) from a 2D target. The ejected area is much larger than that predicted bymore » molecular dynamic simulations and a large ionization rate is observed. The mass distribution and characteristics of the emitted secondary ions are presented and offer an insight into the process to produce the large hole observed in the graphene.« less

Thin-film rechargeable lithium batteries

NASA Astrophysics Data System (ADS)

Dudney, N. J.; Bates, J. B.; Lubben, D.

1994-11-01

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

Photo-induced-heat localization on nanostructured metallic glasses

NASA Astrophysics Data System (ADS)

Uzun, Ceren; Kahler, Niloofar; Grave de Peralta, Luis; Kumar, Golden; Bernussi, Ayrton A.

2017-09-01

Materials with large photo-thermal energy conversion efficiency are essential for renewable energy applications. Photo-excitation is an effective approach to generate controlled and localized heat at relatively low excitation optical powers. However, lateral heat diffusion to the surrounding illuminated areas accompanied by low photo-thermal energy conversion efficiency remains a challenge for metallic surfaces. Surface nanoengineering has proven to be a successful approach to further absorption and heat generation. Here, we show that pronounced spatial heat localization and high temperatures can be achieved with arrays of amorphous metallic glass nanorods under infrared optical illumination. Thermography measurements revealed marked temperature contrast between illuminated and non-illuminated areas even under low optical power excitation conditions. This attribute allowed for generating legible photo-induced thermal patterns on textured metallic glass surfaces.

Three-dimensional nanomechanical mapping of amorphous and crystalline phase transitions in phase-change materials.

PubMed

Grishin, Ilja; Huey, Bryan D; Kolosov, Oleg V

2013-11-13

The nanostructure of micrometer-sized domains (bits) in phase-change materials (PCM) that undergo switching between amorphous and crystalline phases plays a key role in the performance of optical PCM-based memories. Here, we explore the dynamics of such phase transitions by mapping PCM nanostructures in three dimensions with nanoscale resolution by combining precision Ar ion beam cross-sectional polishing and nanomechanical ultrasonic force microscopy (UFM) mapping. Surface and bulk phase changes of laser written submicrometer to micrometer sized amorphous-to-crystalline (SET) and crystalline-to-amorphous (RESET) bits in chalcogenide Ge2Sb2Te5 PCM are observed with 10-20 nm lateral and 4 nm depth resolution. UFM mapping shows that the Young's moduli of crystalline SET bits exceed the moduli of amorphous areas by 11 ± 2%, with crystalline content extending from a few nanometers to 50 nm in depth depending on the energy of the switching pulses. The RESET bits written with 50 ps pulses reveal shallower depth penetration and show 30-50 nm lateral and few nanometer vertical wavelike topography that is anticorrelated with the elastic modulus distribution. Reverse switching of amorphous RESET bits results in the full recovery of subsurface nanomechanical properties accompanied with only partial topography recovery, resulting in surface corrugations attributed to quenching. This precision sectioning and nanomechanical mapping approach could be applicable to a wide range of amorphous, nanocrystalline, and glass-forming materials for 3D nanomechanical mapping of amorphous-crystalline transitions.

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

Flow Sources of The Solar Wind Stream Structieres

NASA Astrophysics Data System (ADS)

Lotova, N. A.; Obridko, V. N.; Vladimirskii, K. V.

The large-scale stream structure of the solar wind flow was studied at the main acceler- ation area of 10 to 40 solar radii from the Sun. Three independent sets of experimental data were used: radio astronomy observations of radio wave scattering on near-solar plasmas (large radio telescopes of the P.N.Lebedev Physical Institute were used); mor- phology of the WLC as revealed by the SOHO optical solar corona observations; solar magnetic field strength and configuration computed using the Wilcox Solar Observa- tory data. Experimental data of 1997-1998 years on the position of the transition, tran- sonic region of the solar wind flow were used as a parameter reflecting the intensity of the solar plasmas acceleration process. Correlation studies of these data combined with the magnetic field strength at the solar corona level revealed several types of the solar wind streams differing in the final result, the velocity at large distances from the Sun. Besides of the well-known flows stemming from the polar coronal holes, high-speed streams were observed arising in lateral areas of the streamer structures in contrast to the main body of the streamers, being a known source of the slow solar wind. The slowest streams arise at areas of mixed magnetic field structure compris- ing both open and closed (loop-like) filed lines. In the white-light corona images this shows extensive areas of bright amorphous luminosity.

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

PubMed

Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

2017-02-10

We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

Variable-amplitude oscillatory shear response of amorphous materials.

PubMed

Perchikov, Nathan; Bouchbinder, Eran

2014-06-01

Variable-amplitude oscillatory shear tests are emerging as powerful tools to investigate and quantify the nonlinear rheology of amorphous solids, complex fluids, and biological materials. Quite a few recent experimental and atomistic simulation studies demonstrated that at low shear amplitudes, an amorphous solid settles into an amplitude- and initial-conditions-dependent dissipative limit cycle, in which back-and-forth localized particle rearrangements periodically bring the system to the same state. At sufficiently large shear amplitudes, the amorphous system loses memory of the initial conditions, exhibits chaotic particle motions accompanied by diffusive behavior, and settles into a stochastic steady state. The two regimes are separated by a transition amplitude, possibly characterized by some critical-like features. Here we argue that these observations support some of the physical assumptions embodied in the nonequilibrium thermodynamic, internal-variables based, shear-transformation-zone model of amorphous viscoplasticity; most notably that "flow defects" in amorphous solids are characterized by internal states between which they can make transitions, and that structural evolution is driven by dissipation associated with plastic deformation. We present a rather extensive theoretical analysis of the thermodynamic shear-transformation-zone model for a variable-amplitude oscillatory shear protocol, highlighting its success in accounting for various experimental and simulational observations, as well as its limitations. Our results offer a continuum-level theoretical framework for interpreting the variable-amplitude oscillatory shear response of amorphous solids and may promote additional developments.

Localization of vibrational modes leads to reduced thermal conductivity of amorphous heterostructures

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.

2018-05-01

We investigate the vibrational heat transfer mechanisms in amorphous Stillinger-Weber silicon and germanium-based alloys and heterostructures via equilibrium and nonequilibrium molecular dynamics simulations along with lattice dynamics calculations. We find that similar to crystalline alloys, amorphous alloys demonstrate large size effects in thermal conductivity, while layering the constituent materials into superlattice structures leads to length-independent thermal conductivities. The thermal conductivity of an amorphous SixGe1 -x alloy reduces by as much as ˜53 % compared to the thermal conductivity of amorphous silicon; compared to the larger reduction in crystalline phases due to alloying, we show that compositional disorder rather than structural disorder has a larger impact on the thermal conductivity reduction. Our thermal conductivity predictions for a-Si/a-Ge superlattices suggest that the alloy limit in amorphous SiGe-based structures can be surpassed with interface densities above ˜0.35 nm-1 . We attribute the larger reduction in thermal conductivity of layered Si/Ge heterostructures to greater localization of modes at and around the cutoff frequency of the softer layer as demonstrated via lattice dynamics calculations and diffusivities of individual eigenmodes calculated according to the Allen-Feldman theory [P. B. Allen and J. L. Feldman, Phys. Rev. B 48, 12581 (1993), 10.1103/PhysRevB.48.12581] for our amorphous SiGe-based alloys and superlattice structures.

Low-temperature silicon thin films for large-area electronics: Device fabrication using soft lithography and laser-crystallization by sequential lateral solidification

NASA Astrophysics Data System (ADS)

Jin, Hyun-Chul

This work demonstrates possible routes for fabricating large-area electronic devices on glass or plastic substrates using low-temperature materials deposition and soft lithographic device patterning. Hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively studied as the semiconducting material for flat panel displays and solar cells. On glass substrates, we have deposited a-Si:H films at a temperature lower than 125°C, and we have used pulsed excimer laser crystallization in the sequential lateral solidification (SLS) regime to fabricate poly-Si films. We use micromolding in capillaries (MIMIC), a form of soft lithography involving micrometer-scale polymer molding, as a means to fabricate amorphous silicon thin-film transistors (TFTs), and photoconductive sensor arrays on both planar and curved substrates. The use of non-planar substrates has captured considerable attention in the field because it would open up new applications and new designs. Field-effect transistors made by SLS poly-Si show excellent mobility and on/off current ratio; however, the microstructure of the material had never been well documented. We determined the microtexture using electron backscattering diffraction (EBSD): the first crystallites formed in the a-Si layer are random; along the direction of the solidification, a strong <100> in-plane orientation quickly develops due to competitive growth and occlusion. The misorientation angle between neighboring grains is also analyzed. A large fraction of the boundaries within the material are low-angle and coincidence site lattice (CSL) types. We discuss the implications of the findings on the defect generation mechanism and on the electrical properties of the films. We have analyzed the electrical properties of SLS poly-Si films on oxidized Si wafer using the pseudo-MOSFET geometry; the majority carrier mobility is extracted from the transconductance. However, the data are non-ideal due to large contact resistance and current spreading. We discuss the future use of these electrical characterization techniques to analyze the properties of individual grain boundaries in thin film Si bicrystals formed by SLS.

Preservation of amorphous ultrafine material: A proposed proxy for slip during recent earthquakes on active faults

NASA Astrophysics Data System (ADS)

Hirono, Tetsuro; Asayama, Satoru; Kaneki, Shunya; Ito, Akihiro

2016-11-01

The criteria for designating an “Active Fault” not only are important for understanding regional tectonics, but also are a paramount issue for assessing the earthquake risk of faults that are near important structures such as nuclear power plants. Here we propose a proxy, based on the preservation of amorphous ultrafine particles, to assess fault activity within the last millennium. X-ray diffraction data and electron microscope observations of samples from an active fault demonstrated the preservation of large amounts of amorphous ultrafine particles in two slip zones that last ruptured in 1596 and 1999, respectively. A chemical kinetic evaluation of the dissolution process indicated that such particles could survive for centuries, which is consistent with the observations. Thus, preservation of amorphous ultrafine particles in a fault may be valuable for assessing the fault’s latest activity, aiding efforts to evaluate faults that may damage critical facilities in tectonically active zones.

Defect kinetics and resistance to amorphization in zirconium carbide

NASA Astrophysics Data System (ADS)

Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

2015-02-01

To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material.

On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Paine, David C.

2011-06-01

In2O3-based amorphous oxide channel materials are of increasing interest for thin film transisitor applications due, in part, to the remarkable stability of this class of materials amorphous structure and electronic properties. We report that this stability is degraded in the presence of Ti, which is widely used as a contact and/or adhesion layer. A cross-sectional transmission electron microscopy analysis, supported by glancing incident angle x-ray and selected area diffraction examination, shows that amorphous indium zinc oxide in contact with Ti undergoes crystallization to the bixbyite phase and reacts to form the rutile phase of TiO2 at a temperature of 200 °C. A basic thermodynamic analysis is presented and forms the basis of a model that describes both the crystallization and the resistivity decrease.

Electrodeposition of amorphous Ni P coatings onto Nd Fe B permanent magnet substrates

NASA Astrophysics Data System (ADS)

Ma, C. B.; Cao, F. H.; Zhang, Z.; Zhang, J. Q.

2006-12-01

Decorative and protective Ni-P amorphous coatings were electroplated onto NdFeB permanent magnet from an ortho-phosphorous acid contained bath. The influences of the main electroplating technological parameters including current density, bath pH, bath temperature and H3PO3 on the structure and chemical composition of Ni-P coatings were investigated by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) techniques in conjunction with X-ray diffraction (XRD), scanning transmission electron microscopy (SEM) and X-ray energy-dispersive spectrometry (EDX). The optimized amorphous Ni-P coated NdFeB can stand for ca. 180 h against neutral 3.0 wt.% NaCl salt spray without any pitting corrosion. Meanwhile, the results also showed that large phosphorous content is the precondition for Ni-P coatings to possess the amorphous structure, but too much high phosphorous content can damage the amorphous structure due to the separation of superfluous P from Ni2P/Ni3P and the resultant formation of multi-phase coatings (such as Ni2P-P).

Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

NASA Astrophysics Data System (ADS)

Wei, Yin-Chang; Li, Yi-Chieh; Lee, I.-Che; Cheng, Huang-Chung

2017-06-01

Typically, each element in a large-area flat-panel X-ray image sensor consists of a photodetector and amorphous silicon (a-Si) thin-film transistor (TFT) switches. In order to reduce noise, increase sensor dynamic range, and increase carrying capacity, the low-temperature polycrystalline-silicon (LTPS) TFTs have been proposed as a candidate to replace the a-Si TFTs. However, there are concerns regarding the impact of X-ray radiation in LTPS-TFTs, and several studies have been conducted to inquire into the same. In this paper, we show that LTPS TFTs with small channel length (<2 µm) are almost immune to X-ray radiation.

Safe gas handling and system design for the large scale production of amorphous silicon based solar cells

NASA Astrophysics Data System (ADS)

Fortmann, C. M.; Farley, M. V.; Smoot, M. A.; Fieselmann, B. F.

1988-07-01

Solarex is one of the leaders in amorphous silicon based photovoltaic production and research. The large scale production environment presents unique safety concerns related to the quantity of dangerous materials as well as the number of personnel handling these materials. The safety measures explored by this work include gas detection systems, training, and failure resistant gas handling systems. Our experiences with flow restricting orifices in the CGA connections and the use of steel cylinders is reviewed. The hazards and efficiency of wet scrubbers for silane exhausts are examined. We have found it to be useful to provide the scrubbler with temperature alarms.

Pressure-Induced Phase Transitions in GeTe-Rich Ge-Sb-Te Alloys across the Rhombohedral-to-Cubic Transitions.

PubMed

Krbal, Milos; Bartak, Jaroslav; Kolar, Jakub; Prytuliak, Anastasiia; Kolobov, Alexander V; Fons, Paul; Bezacier, Lucile; Hanfland, Michael; Tominaga, Junji

2017-07-17

We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge 8 Sb 2 Te 11 and randomly distorted cubic Ge 4 Sb 2 Te 7 and high-temperature Ge 8 Sb 2 Te 11 phases. While coherent distortion in Ge 8 Sb 2 Te 11 does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge 8 Sb 2 Te 11 phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge 4 Sb 2 Te 7 , which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge 8 Sb 2 Te 11 is a temperature-dependent process. Ge 8 Sb 2 Te 11 transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe) x - (Sb 2 Te 3 ) 1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.

Biosynthesis of amorphous mesoporous aluminophosphates using yeast cells as templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sifontes, Ángela B., E-mail: asifonte@ivic.gob.ve; González, Gema; Tovar, Leidy M.

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Amorphous aluminophosphates can take place using yeast as template. ► A mesoporous material was obtained. ► The specific surface area after calcinations ranged between 176 and 214 m{sup 2} g{sup −1}. -- Abstract: In this study aluminophosphates have been synthesized from aluminum isopropoxide and phosphoric acid solutions using yeast cells as template. The physicochemical characterization was carried out by thermogravimetric analysis; X-ray diffraction; Fourier transform infrared; N{sub 2} adsorption–desorption isotherms; scanning electron microscopy; transmission electron microscopy and potentiometric titration with N-butylamine for determination of: thermal stability; crystalline structure; textural properties; morphology and surface acidity,more » respectively. The calcined powders consisted of an intimate mixture of amorphous and crystallized AlPO particles with sizes between 23 and 30 nm. The average pore size observed is 13–16 nm and the specific surface area after calcinations (at 650 °C) ranged between 176 and 214 m{sup 2} g{sup −1}.« less

FAST TRACK COMMUNICATION Heat transfer between graphene and amorphous SiO2

NASA Astrophysics Data System (ADS)

Persson, B. N. J.; Ueba, H.

2010-11-01

We study the heat transfer between graphene and amorphous SiO2. We include both the heat transfer from the area of real contact, and between the surfaces in the non-contact region. We consider the radiative heat transfer associated with the evanescent electromagnetic waves which exist outside of all bodies, and the heat transfer by the gas in the non-contact region. We find that the dominant contribution to the heat transfer results from the area of real contact, and the calculated value of the heat transfer coefficient is in good agreement with the value deduced from experimental data.

Mathematical model to analyze the dissolution behavior of metastable crystals or amorphous drug accompanied with a solid-liquid interface reaction.

PubMed

Hirai, Daiki; Iwao, Yasunori; Kimura, Shin-Ichiro; Noguchi, Shuji; Itai, Shigeru

2017-04-30

Metastable crystals and the amorphous state of poorly water-soluble drugs in solid dispersions (SDs), are subject to a solid-liquid interface reaction upon exposure to a solvent. The dissolution behavior during the solid-liquid interface reaction often shows that the concentration of drugs is supersaturated, with a high initial drug concentration compared with the solubility of stable crystals but finally approaching the latter solubility with time. However, a method for measuring the precipitation rate of stable crystals and/or the potential solubility of metastable crystals or amorphous drugs has not been established. In this study, a novel mathematical model that can represent the dissolution behavior of the solid-liquid interface reaction for metastable crystals or amorphous drug was developed and its validity was evaluated. The theory for this model was based on the Noyes-Whitney equation and assumes that the precipitation of stable crystals at the solid-liquid interface occurs through a first-order reaction. Moreover, two models were developed, one assuming that the surface area of the drug remains constant because of the presence of excess drug in the bulk and the other that the surface area changes in time-dependency because of agglomeration of the drug. SDs of Ibuprofen (IB)/polyvinylpyrrolidone (PVP) were prepared and their dissolution behaviors under non-sink conditions were fitted by the models to evaluate improvements in solubility. The model assuming time-dependent surface area showed good agreement with experimental values. Furthermore, by applying the model to the dissolution profile, parameters such as the precipitation rate and the potential solubility of the amorphous drug were successfully calculated. In addition, it was shown that the improvement in solubility with supersaturation was able to be evaluated quantitatively using this model. Therefore, this mathematical model would be a useful tool to quantitatively determine the supersaturation concentration of a metastable drug from solid dispersions. Copyright © 2017 Elsevier B.V. All rights reserved.

Bringing nanomagnetism to the mesoscale with artificial amorphous structures

NASA Astrophysics Data System (ADS)

Muscas, G.; Brucas, R.; Jönsson, P. E.

2018-05-01

In the quest for materials with emergent or improved properties, an effective route is to create artificial superstructures. Novel properties emerge from the coupling between the phases, but the strength of this coupling depends on the quality of the interfaces. Atomic control of crystalline interfaces is notoriously complicated and to elude that obstacle, we suggest here an all-amorphous design. Starting from a model amorphous iron alloy, we locally tune the magnetic behavior by creating boron-doped regions by means of ion implantation through a lithographic mask. This process preserves the amorphous environment, creating a non-topographic magnetic superstructure with smooth interfaces and no structural discontinuities. The absence of inhomogeneities acting as pinning centers for the magnetization reversal is demonstrated by the formation of magnetic vortexes for ferromagnetic disks as large as 20 µm in diameter embedded within a paramagnetic matrix. Rigid exchange coupling between two amorphous ferromagnetic phases in a microstructured sample is evidenced by an investigation involving first-order reversal curves. The sample consists of a soft matrix with embedded elements constituting a hard phase where the anisotropy originates from an elongated shape of the elements. We provide an intuitive explanation for the micrometer-range exchange coupling mechanism and discuss how to tailor the properties of all-amorphous superstructures.

Synthesis and Electrochemical Properties of Amorphous Carbon Coated Sn Anode Material for Lithium Ion Batteries and Sodium Ion Batteries.

PubMed

Choi, Ji-Seub; Lee, Hoi-Jin; Ha, Jong-Keun; Cho, Kwon-Koo

2018-09-01

Sn is one of the promising anode material for lithium-ion and sodium-ion batteries because of Sn has many advantages such as a high theoretical capacity of 994 mAh/g, inexpensive, abundant and nontoxic. However, Sn-based anodes have a critical problem from pulverization of the particles due to large volume change (>300% in lithium-ion battery and 420% in the sodium-ion battery) during alloying/dealloying reaction. To overcome this problem, we fabricate Sn/C particle of core/shell structure. Sn powder was produced by pulsed wire explosion in liquid media, and amorphous carbon coating process was prepared by hydrothermal synthesis. The charge capacity of Sn electrode and amorphous carbon coated Sn electrode was 413 mAh/g and 452 mAh/g after 40 cycles in lithium half-cell test. The charge capacity of Sn electrode and amorphous carbon coated Sn electrode was 240 mAh/g and 487 mAh/g after 40 cycles in sodium half-cell test. Amorphous carbon coating contributed to the improvement of capacity in lithium and sodium battery systems. And the effect of amorphous carbon coating in sodium battery system was superior to that in lithium battery system.

Preparation, characterization and in vivo evaluation of amorphous atorvastatin calcium nanoparticles using supercritical antisolvent (SAS) process.

PubMed

Kim, Min-Soo; Jin, Shun-Ji; Kim, Jeong-Soo; Park, Hee Jun; Song, Ha-Seung; Neubert, Reinhard H H; Hwang, Sung-Joo

2008-06-01

In this work, amorphous atorvastatin calcium nanoparticles were successfully prepared using the supercritical antisolvent (SAS) process. The effect of process variables on particle size and distribution of atorvastatin calcium during particle formation was investigated. Solid state characterization, solubility, intrinsic dissolution, powder dissolution studies and pharmacokinetic study in rats were performed. Spherical particles with mean particle size ranging between 152 and 863 nm were obtained by varying process parameters such as precipitation vessel pressure and temperature, drug solution concentration and feed rate ratio of CO2/drug solution. XRD, TGA, FT-IR, FT-Raman, NMR and HPLC analysis indicated that atorvastatin calcium existed as anhydrous amorphous form and no degradation occurred after SAS process. When compared with crystalline form (unprocessed drug), amorphous atorvastatin calcium nanoparticles were of better performance in solubility and intrinsic dissolution rate, resulting in higher solubility and faster dissolution rate. In addition, intrinsic dissolution rate showed a good correlation with the solubility. The dissolution rates of amorphous atorvastatin calcium nanoparticles were highly increased in comparison with unprocessed drug by the enhancement of intrinsic dissolution rate and the reduction of particle size resulting in an increased specific surface area. The absorption of atorvastatin calcium after oral administration of amorphous atorvastatin calcium nanoparticles to rats was markedly increased.

Inhibition effects of protein-conjugated amorphous zinc sulfide nanoparticles on tumor cells growth

NASA Astrophysics Data System (ADS)

Cao, Ying; Wang, Hua-Jie; Cao, Cui; Sun, Yuan-Yuan; Yang, Lin; Wang, Bao-Qing; Zhou, Jian-Guo

2011-07-01

In this article, a facile and environmentally friendly method was applied to fabricate BSA-conjugated amorphous zinc sulfide (ZnS) nanoparticles using bovine serum albumin (BSA) as the matrix. Transmission electron microscopy analysis indicated that the stable and well-dispersed nanoparticles with the diameter of 15.9 ± 2.1 nm were successfully prepared. The energy dispersive X-ray, X-ray powder diffraction, Fourier transform infrared spectrograph, high resolution transmission electron microscope, and selected area electron diffraction measurements showed that the obtained nanoparticles had the amorphous structure and the coordination occurred between zinc sulfide surfaces and BSA in the nanoparticles. In addition, the inhibition effects of BSA-conjugated amorphous zinc sulfide nanoparticles on tumor cells growth were described in detail by cell viability analysis, optical and electron microscopy methods. The results showed that BSA-conjugated amorphous zinc sulfide nanoparticles could inhibit the metabolism and proliferation of human hepatocellular carcinoma cells, and the inhibition was dose dependent. The half maximal inhibitory concentration (IC50) was 0.36 mg/mL. Overall, this study suggested that BSA-conjugated amorphous zinc sulfide nanoparticles had the application potential as cytostatic agents and BSA in the nanoparticles could provide the modifiable site for the nanoparticles to improve their bioactivity or to endow them with the target function.

pH control of the structure, composition, and catalytic activity of sulfated zirconia

NASA Astrophysics Data System (ADS)

Ivanov, Vladimir K.; Baranchikov, Alexander Ye.; Kopitsa, Gennady P.; Lermontov, Sergey A.; Yurkova, Lyudmila L.; Gubanova, Nadezhda N.; Ivanova, Olga S.; Lermontov, Anatoly S.; Rumyantseva, Marina N.; Vasilyeva, Larisa P.; Sharp, Melissa; Pranzas, P. Klaus; Tretyakov, Yuri D.

2013-02-01

We report a detailed study of structural and chemical transformations of amorphous hydrous zirconia into sulfated zirconia-based superacid catalysts. Precipitation pH is shown to be the key factor governing structure, composition and properties of amorphous sulfated zirconia gels and nanocrystalline sulfated zirconia. Increase in precipitation pH leads to substantial increase of surface fractal dimension (up to ˜2.7) of amorphous sulfated zirconia gels, and consequently to increase in specific surface area (up to ˜80 m2/g) and simultaneously to decrease in sulfate content and total acidity of zirconia catalysts. Complete conversion of hexene-1 over as synthesized sulfated zirconia catalysts was observed even under ambient conditions.

Hot-spot durability testing of amorphous cells and modules

NASA Technical Reports Server (NTRS)

Gonzalez, Charles; Jetter, Elizabeth

1985-01-01

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

DTIC Science & Technology

1991-01-01

scanning, wafer curvature technique to study the kinetics of crystallization of amorphous silicon. When a thin film of amorphous silicon crystallizes...the film and the kinetics of the crystallization process. We find the tensile stress in the film to increase by about 500 MPa when crystallization...occurs. This is a very large stress that could have significance for device processing and applications. By measuring the kinetics of this stress change

Ion migration in crystalline and amorphous HfOX

NASA Astrophysics Data System (ADS)

Schie, Marcel; Müller, Michael P.; Salinga, Martin; Waser, Rainer; De Souza, Roger A.

2017-03-01

The migration of ions in HfOx was investigated by means of large-scale, classical molecular-dynamics simulations over the temperature range 1000 ≤T /K ≤2000 . Amorphous HfOx was studied in both stoichiometric and oxygen-deficient forms (i.e., with x = 2 and x = 1.9875); oxygen-deficient cubic and monoclinic phases were also studied. The mean square displacement of oxygen ions was found to evolve linearly as a function of time for the crystalline phases, as expected, but displayed significant negative deviations from linear behavior for the amorphous phases, that is, the behavior was sub-diffusive. That oxygen-ion migration was observed for the stoichiometric amorphous phase argues strongly against applying the traditional model of vacancy-mediated migration in crystals to amorphous HfO2. In addition, cation migration, whilst not observed for the crystalline phases (as no cation defects were present), was observed for both amorphous phases. In order to obtain activation enthalpies of migration, the residence times of the migrating ions were analyzed. The analysis reveals four activation enthalpies for the two amorphous phases: 0.29 eV, 0.46 eV, and 0.66 eV (values very close to those obtained for the monoclinic structure) plus a higher enthalpy of at least 0.85 eV. In comparison, the cubic phase is characterized by a single value of 0.43 eV. Simple kinetic Monte Carlo simulations suggest that the sub-diffusive behavior arises from nanoscale confinement of the migrating ions.

Addressing the amorphous content issue in quantitative phase analysis: the certification of NIST standard reference material 676a.

PubMed

Cline, James P; Von Dreele, Robert B; Winburn, Ryan; Stephens, Peter W; Filliben, James J

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum (α-Al(2)O(3)) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Under the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% ± 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.

Boron carbide coatings for neutron detection probed by x-rays, ions, and neutrons to determine thin film quality

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nowak, G., E-mail: Gregor.Nowak@hzg.de; Störmer, M.; Horstmann, C.

2015-01-21

Due to the present shortage of {sup 3}He and the associated tremendous increase of its price, the supply of large neutron detection systems with {sup 3}He becomes unaffordable. Alternative neutron detection concepts, therefore, have been invented based on solid {sup 10}B converters. These concepts require development in thin film deposition technique regarding high adhesion, thickness uniformity and chemical purity of the converter coating on large area substrates. We report on the sputter deposition of highly uniform large-area {sup 10}B{sub 4}C coatings of up to 2 μm thickness with a thickness deviation below 4% using the Helmholtz-Zentrum Geesthacht large area sputtering system.more » The {sup 10}B{sub 4}C coatings are x-ray amorphous and highly adhesive to the substrate. Material analysis by means of X-ray-Photoelectron Spectroscopy, Secondary-Ion-Mass-Spectrometry, and Rutherford-Back-Scattering (RBS) revealed low impurities concentration in the coatings. The isotope composition determined by Secondary-Ion-Mass-Spectrometry, RBS, and inelastic nuclear reaction analysis of the converter coatings evidences almost identical {sup 10}B isotope contents in the sputter target and in the deposited coating. Neutron conversion and detection test measurements with variable irradiation geometry of the converter coating demonstrate an average relative quantum efficiency ranging from 65% to 90% for cold neutrons as compared to a black {sup 3}He-monitor. Thus, these converter coatings contribute to the development of {sup 3}He-free prototype detectors based on neutron grazing incidence. Transferring the developed coating process to an industrial scale sputtering system can make alternative {sup 3}He-free converter elements available for large area neutron detection systems.« less

Boron carbide coatings for neutron detection probed by x-rays, ions, and neutrons to determine thin film quality

NASA Astrophysics Data System (ADS)

Nowak, G.; Störmer, M.; Becker, H.-W.; Horstmann, C.; Kampmann, R.; Höche, D.; Haese-Seiller, M.; Moulin, J.-F.; Pomm, M.; Randau, C.; Lorenz, U.; Hall-Wilton, R.; Müller, M.; Schreyer, A.

2015-01-01

Due to the present shortage of 3He and the associated tremendous increase of its price, the supply of large neutron detection systems with 3He becomes unaffordable. Alternative neutron detection concepts, therefore, have been invented based on solid 10B converters. These concepts require development in thin film deposition technique regarding high adhesion, thickness uniformity and chemical purity of the converter coating on large area substrates. We report on the sputter deposition of highly uniform large-area 10B4C coatings of up to 2 μm thickness with a thickness deviation below 4% using the Helmholtz-Zentrum Geesthacht large area sputtering system. The 10B4C coatings are x-ray amorphous and highly adhesive to the substrate. Material analysis by means of X-ray-Photoelectron Spectroscopy, Secondary-Ion-Mass-Spectrometry, and Rutherford-Back-Scattering (RBS) revealed low impurities concentration in the coatings. The isotope composition determined by Secondary-Ion-Mass-Spectrometry, RBS, and inelastic nuclear reaction analysis of the converter coatings evidences almost identical 10B isotope contents in the sputter target and in the deposited coating. Neutron conversion and detection test measurements with variable irradiation geometry of the converter coating demonstrate an average relative quantum efficiency ranging from 65% to 90% for cold neutrons as compared to a black 3He-monitor. Thus, these converter coatings contribute to the development of 3He-free prototype detectors based on neutron grazing incidence. Transferring the developed coating process to an industrial scale sputtering system can make alternative 3He-free converter elements available for large area neutron detection systems.

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

PubMed

Rigosi, Albert F; Hill, Heather M; Glavin, Nicholas R; Pookpanratana, Sujitra J; Yang, Yanfei; Boosalis, Alexander G; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A; Nguyen, Nhan V; Hacker, Christina A; Elmquist, Randolph E; Hight Walker, Angela R; Newell, David B

2018-01-01

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride ( a -BN and h -BN) films. The a -BN is formed with pulsed laser deposition and the h -BN is grown with triethylboron (TEB) and NH 3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a -BN, and h -BN within the energy range of 1 eV to 8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h -BN heterostructure.

Low-pressure clathrate-hydrate formation in amorphous astrophysical ice analogs

NASA Technical Reports Server (NTRS)

Blake, D. F.; Allamandola, L. J.; Sandford, S.; Hudgins, D.; Freund, F.

1991-01-01

In modeling cometary ice, the properties of clathrate hydrates were used to explain anomalous gas release at large radial distances from the Sun, and the retention of particular gas inventories at elevated temperatures. Clathrates may also have been important early in solar system history. However, there has never been a reasonable mechanism proposed for clathrate formation under the low pressures typical of these environments. For the first time, it was shown that clathrate hydrates can be formed by warming and annealing amorphous mixed molecular ices at low pressures. The complex microstructures which occur as a result of clathrate formation from the solid state may provide an explanation for a variety of unexplained phenomena. The vacuum and imaging systems of an Hitachi H-500H Analytical Electron Microscope was modified to study mixed molecular ices at temperatures between 12 and 373 K. The resulting ices are characterized by low-electron dose Transmission Electron Microscopy (TEM) and Selected Area Electron Diffraction (SAED). The implications of these results for the mechanical and gas release properties of comets are discussed. Laboratory IR data from similar ices are presented which suggest the possibility of remotely observing and identifying clathrates in astrophysical objects.

Development of the new generation of glass-based neutron detection materials

NASA Astrophysics Data System (ADS)

Dosovitskiy, Alexey E.; Dosovitskiy, Georgy A.; Korjik, Mikhail V.

2012-10-01

Approach to obtaining of neutron detector material alternative to 3He containing ionization gas detectors is proposed. Recently, a severe deficit of the 3He has pushed its price up strongly, so alternative cheaper detecting materials are demanded. Possible alternatives to 3He are materials containing 10B and 6Li isotopes. These two elements form many inorganic materials, either crystalline or amorphous. Glass scintillators look very advantageous as detector materials, especially for large area detectors, as their manufacturing could be cheaper and easier-to-scale, compared to single crystals and ceramics. A poor exciton transport, which is a fundamental feature of glass scintillators, limits their light yield and, therefore, practical use. Here we discuss a possibility to improve energy transfer to luminescent centers by creation of high concentration of crystalline luminophore particles in the glass matrix. This could be achieved through the controlled crystallization of the glass. We demonstrate how this approach works in well known Li-Al-Si (LAS) glass system. Partially crystallized Ce3+-doped glass with nanocrystalline inclusions is obtained, which shows the superior scintillation properties compared to amorphous glass. The material is characterized by an emission spectrum shift towards shorter wavelengths, which provides low light self-absorption.

Local structure of the crystalline and amorphous states of Ga2Te3 phase-change alloy without resonant bonding: A combined x-ray absorption and ab initio study

NASA Astrophysics Data System (ADS)

Kolobov, A. V.; Fons, P.; Krbal, M.; Mitrofanov, K.; Tominaga, J.; Uruga, T.

2017-02-01

Phase-change memories are usually associated with GeTe-Sb2Te3 quasibinary alloys, where the large optical contrast between the crystalline and amorphous phases is attributed to the formation of resonant bonds in the crystalline phase, which has a rocksalt-like structure. The recent findings that tetrahedrally bonded Ga2Te3 possesses a similarly large property contrast and very low thermal conductivity in the crystalline phase and undergoes low-energy switching [H. Zhu et al., Appl. Phys. Lett. 97, 083504 (2010), 10.1063/1.3483762; K. Kurosaki et al., Appl. Phys. Lett. 93, 012101 (2008), 10.1063/1.2940591] challenge the existing paradigm. In this work we report on the local structure of the crystalline and amorphous phases of Ga2Te3 obtained from x-ray absorption measurements and ab initio simulations. Based on the obtained results, a model of phase change in Ga2Te3 is proposed. We argue that efficient switching in Ga2Te3 is due to the presence of primary and secondary bonding in the crystalline phase originating from the high concentration of Ga vacancies, whereas the structural stability of both phases is ensured by polyvalency of Te atoms due to the presence of lone-pair electrons and the formation of like-atom bonds in the amorphous phase.

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

NASA Technical Reports Server (NTRS)

Hamakawa, Yoshihiro

1993-01-01

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

PubMed

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

Preparation and properties of porous microspheres made from borate glass.

PubMed

Conzone, Samuel D; Day, Delbert E

2009-02-01

Dysprosium lithium-borate glass microspheres and particles, ranging from 45 to 150 microm in diameter, were reacted with a 0.25 M phosphate solution at 37 degrees C, whose pH was either 3 or 8.8. The glass reacted nonuniformly and was converted into a porous, amorphous, hydrated, dysprosium phosphate reaction product. The amorphous product had the same volume and shape (pseudomorphic) as the unreacted glass, and could be dried without cracking. After heating at 300 degrees C for 1 h, the amorphous reaction product had a specific surface area of approximately 200 m(2)/g, a pore size of approximately 30 nm, and nominal crushing strength of approximately 10 MPa. When the reaction product was heated to 600 degrees C for 15 min, the specific surface area decreased to approximately 90 m(2)/g and the nominal crushing strength increased to 35 MPa. Heating above 615 degrees C converted the amorphous dysprosium phosphate product into crystalline DyPO(4), which contained open porosity until heated above 800 degrees C for 15 min. Highly porous materials of different chemical composition can be prepared by chemically reacting a borate-based glass with an aqueous solution at low-temperature (<100 degrees C). These highly porous materials are easy to process, and are considered candidates for controlled drug delivery, catalysis, chromatographic separation, filtration, and as bioactive materials.

Preparation and pharmaceutical characterization of amorphous cefdinir using spray-drying and SAS-process.

PubMed

Park, Junsung; Park, Hee Jun; Cho, Wonkyung; Cha, Kwang-Ho; Kang, Young-Shin; Hwang, Sung-Joo

2010-08-30

The aim of this study was to investigate the effects of micronization and amorphorization of cefdinir on solubility and dissolution rate. The amorphous samples were prepared by spray-drying (SD) and supercritical anti-solvent (SAS) process, respectively and their amorphous natures were confirmed by DSC, PXRD and FT-IR. Thermal gravimetric analysis was performed by TGA. SEM was used to investigate the morphology of particles and the processed particle had a spherical shape, while the unprocessed crystalline particle had a needle-like shape. The mean particle size and specific surface area were measured by dynamic light scattering (DLS) and BET, respectively. The DLS result showed that the SAS-processed particle was the smallest, followed by SD and the unprocessed cefdinir. The BET result was the same as DLS result in that the SAS-processed particle had the largest surface area. Therefore, the processed cefdinir, especially the SAS-processed particle, appeared to have enhanced apparent solubility, improved intrinsic dissolution rate and better drug release when compared with SD-processed and unprocessed crystalline cefdinir due not only to its amorphous nature, but also its reduced particle size. Conclusions were that the solubility and dissolution rate of crystalline cefdinir could be improved by physically modifying the particles using SD and SAS-process. Furthermore, SAS-process was a powerful methodology for improving the solubility and dissolution rate of cefdinir. Copyright 2010 Elsevier B.V. All rights reserved.

Amorphous silicon thin films: The ultimate lightweight space solar cell

NASA Technical Reports Server (NTRS)

Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

1994-01-01

Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ligier, N.; Poulet, F.; Carter, J.

We present new insights into Europa’s surface composition on the global scale from linear spectral modeling of a high spectral resolution data set acquired during a ground-based observation campaign using SINFONI{sup 4}, an adaptive optics near-infrared instrument on the Very Large Telescope (ESO). The spectral modeling confirms the typical “bullseye” distribution of sulfuric acid hydrate on the trailing hemisphere, which is consistent with Iogenic sulfur ion implantation. However, the traditional hypothesis of the presence of sulfate salts on the surface of the satellite is challenged as Mg-bearing chlorinated species (chloride, chlorate, and perchlorate) are found to provide improved spectral fits.more » The derived global distribution of Mg-chlorinated salts (and particularly chloride) is correlated with large-scale geomorphologic units such as chaos and darker areas, thus suggesting an endogenous origin. Based on the 1.65 μ m water-ice absorption band shape and position, the surface temperature is estimated to be in the range 110–130 K, and water ice is found to be predominantly in its crystalline state rather than amorphous. While amorphous water ice exhibits a strong correlation with the expected intensity of the Ionian plasma torus bombardment, crystalline water ice is instead more associated with distinct geomorphological units. Endogenous processes such as jets and ice heating due to active geology may explain this relationship. Otherwise, no evidence of a correlation between grain size for the water ice and the sputtering rate has been detected so far.« less

Mechanical contact induced transformation from the amorphous to the crystalline state in metallic glass

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1984-01-01

Friction and wear tests were conducted with 3.2- and 6.4-millimeter-diameter aluminum oxide spheres sliding, in reciprocating motion, on a Fe67Co18B14Si1 metallic foil. Crystallites with a size range of 10 to 150 nanometers were produced on the wear surface of the amorphous alloy. A strong interaction between transition metals and metalloids such as silicon and boron results in strong segregation during repeated sliding, provides preferential transition metal-metalloid clustering in the amorphous alloy, and subsequently produces the diffused honeycomb structure formed by dark grey bands and primary crystals, that is, alpha-Fe in the matrix. Large plastic flow occurs on an amorphous alloy surface with sliding and the flow film of the alloy transfers to the aluminum oxide pin surface. Multiple slip bands due to shear deformation are observed on the side of the wear track. Two distinct types of wear debris were observed as a result of sliding: an alloy wear debris, and/or powdery-whiskery oxide debris.

Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

NASA Astrophysics Data System (ADS)

Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

2018-03-01

Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

Geometry and mechanics of two-dimensional defects in amorphous materials

PubMed Central

Moshe, Michael; Levin, Ido; Aharoni, Hillel; Kupferman, Raz; Sharon, Eran

2015-01-01

We study the geometry of defects in amorphous materials and their elastic interactions. Defects are defined and characterized by deviations of the material’s intrinsic metric from a Euclidian metric. This characterization makes possible the identification of localized defects in amorphous materials, the formulation of a corresponding elastic problem, and its solution in various cases of physical interest. We present a multipole expansion that covers a large family of localized 2D defects. The dipole term, which represents a dislocation, is studied analytically and experimentally. Quadrupoles and higher multipoles correspond to fundamental strain-carrying entities. The interactions between those entities, as well as their interaction with external stress fields, are fundamental to the inelastic behavior of solids. We develop analytical tools to study those interactions. The model, methods, and results presented in this work are all relevant to the study of systems that involve a distribution of localized sources of strain. Examples are plasticity in amorphous materials and mechanical interactions between cells on a flexible substrate. PMID:26261331

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

PubMed

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys.

PubMed

Wang, Zhiguo; Gu, Meng; Zhou, Yungang; Zu, Xiaotao; Connell, Justin G; Xiao, Jie; Perea, Daniel; Lauhon, Lincoln J; Bang, Junhyeok; Zhang, Shengbai; Wang, Chongmin; Gao, Fei

2013-09-11

The physical and chemical behaviors of materials used in energy storage devices, such as lithium-ion batteries (LIBs), are mainly controlled by an electrochemical process, which normally involves insertion/extraction of ions into/from a host lattice with a concurrent flow of electrons to compensate charge balance. The fundamental physics and chemistry governing the behavior of materials in response to the ions insertion/extraction is not known. Herein, a combination of in situ lithiation experiments and large-scale ab initio molecular dynamics simulations are performed to explore the mechanisms of the electrochemically driven solid-state amorphization in Li-Si systems. We find that local electron-rich condition governs the electrochemically driven solid-state amorphization of Li-Si alloys. This discovery provides the fundamental explanation of why lithium insertion in semiconductor and insulators leads to amorphization, whereas in metals, it leads to a crystalline alloy. The present work correlates electrochemically driven reactions with ion insertion, electron transfer, lattice stability, and phase equilibrium.

Electron-Rich Driven Electrochemical Solid-State Amorphization in Li-Si Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhiguo; Gu, Meng; Zhou, Yungang

2013-08-14

The physical and chemical behaviors of materials used in energy storage devices, such as lithium-ion batteries (LIBs), are mainly controlled by an electrochemical process, which normally involves insertion/extraction of ions into/from a host lattice with a concurrent flow of electrons to compensate charge balance. The fundamental physics and chemistry governing the behavior of materials in response to the ions insertion/extraction is not known. Herein, a combination of in situ lithiation experiments and large-scale ab initio molecular dynamics simulations are performed to explore the mechanisms of the electrochemically driven solid-state amorphization in Li-Si systems. We find that local electron-rich condition governsmore » the electrochemically driven solid-state amorphization of Li-Si alloys. This discovery provides the fundamental explanation of why lithium insertion in semiconductor and insulators leads to amorphization, whereas in metals, it leads to a crystalline alloy. The present work correlates electrochemically driven reactions with ion insertion, electron transfer, lattice stability and phase equilibrium.« less

Preservation of amorphous ultrafine material: A proposed proxy for slip during recent earthquakes on active faults

PubMed Central

Hirono, Tetsuro; Asayama, Satoru; Kaneki, Shunya; Ito, Akihiro

2016-01-01

The criteria for designating an “Active Fault” not only are important for understanding regional tectonics, but also are a paramount issue for assessing the earthquake risk of faults that are near important structures such as nuclear power plants. Here we propose a proxy, based on the preservation of amorphous ultrafine particles, to assess fault activity within the last millennium. X-ray diffraction data and electron microscope observations of samples from an active fault demonstrated the preservation of large amounts of amorphous ultrafine particles in two slip zones that last ruptured in 1596 and 1999, respectively. A chemical kinetic evaluation of the dissolution process indicated that such particles could survive for centuries, which is consistent with the observations. Thus, preservation of amorphous ultrafine particles in a fault may be valuable for assessing the fault’s latest activity, aiding efforts to evaluate faults that may damage critical facilities in tectonically active zones. PMID:27827413

Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices.

PubMed

Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

2016-01-25

Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm(-2)) compared with the melt-quench strategy (∼50 MA cm(-2)). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

PubMed Central

Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

2016-01-01

Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier–lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13–0.6 MA cm−2) compared with the melt-quench strategy (∼50 MA cm−2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2014-10-01

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (Vth). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Quantitative relations between interaction parameter, miscibility and function in organic solar cells

NASA Astrophysics Data System (ADS)

Ye, Long; Hu, Huawei; Ghasemi, Masoud; Wang, Tonghui; Collins, Brian A.; Kim, Joo-Hyun; Jiang, Kui; Carpenter, Joshua H.; Li, Hong; Li, Zhengke; McAfee, Terry; Zhao, Jingbo; Chen, Xiankai; Lai, Joshua Lin Yuk; Ma, Tingxuan; Bredas, Jean-Luc; Yan, He; Ade, Harald

2018-03-01

Although it is known that molecular interactions govern morphology formation and purity of mixed domains of conjugated polymer donors and small-molecule acceptors, and thus largely control the achievable performance of organic solar cells, quantifying interaction-function relations has remained elusive. Here, we first determine the temperature-dependent effective amorphous-amorphous interaction parameter, χaa(T), by mapping out the phase diagram of a model amorphous polymer:fullerene material system. We then establish a quantitative `constant-kink-saturation' relation between χaa and the fill factor in organic solar cells that is verified in detail in a model system and delineated across numerous high- and low-performing materials systems, including fullerene and non-fullerene acceptors. Our experimental and computational data reveal that a high fill factor is obtained only when χaa is large enough to lead to strong phase separation. Our work outlines a basis for using various miscibility tests and future simulation methods that will significantly reduce or eliminate trial-and-error approaches to material synthesis and device fabrication of functional semiconducting blends and organic blends in general.

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

NASA Astrophysics Data System (ADS)

Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

2018-06-01

Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 < x < 0.6. The compositional dependence of the thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

Electrical and optical properties of binary CNx nanocone arrays synthesized by plasma-assisted reaction deposition.

PubMed

Liu, Xujun; Guan, Leilei; Fu, Xiaoniu; Zhao, Yu; Wu, Jiada; Xu, Ning

2014-03-21

Light-absorbing and electrically conductive binary CNx nanocone (CNNC) arrays have been fabricated using a glow discharge plasma-assisted reaction deposition method. The intact CNNCs with amorphous structure and central nickel-filled pipelines could be vertically and neatly grown on nickel-covered substrates according to the catalyst-leading mode. The morphologies and composition of the as-grown CNNC arrays can be well controlled by regulating the methane/nitrogen mixture inlet ratio, and their optical absorption and resistivity strongly depend on their morphologies and composition. Beside large specific surface area, the as-grown CNNC arrays demonstrate high wideband absorption, good conduction, and nice wettability to polymer absorbers.

AM OLED using a-Si TFT backplane on flexible plastic substrate

NASA Astrophysics Data System (ADS)

Sarma, Kalluri R.; Schmidt, John; Roush, Jerry; Chanley, Charles; Dodd, Sonia R.

2004-09-01

Amorphous silicon TFT technology continues to show promise for fabricating large area high resolution flexible AM OLED displays. This paper describes the recent progress in the flexible AM OLED development efforts at Honeywell since our publication in this conference's proceedings in 2003, describing the feasibility of fabricating a 64x64 pixel AM OLED on a flexible plastic substrate. In this paper we describe the design, and fabrication of a 160x160(x3) pixel AM OLED on a flexible plastic substrate with an equivalent 80cgpi resolution. Flexibility characteristics of the fabricated displays are discussed. Further advances and improvements required for extending the size and resolution of flexible AM OLED displays are discussed.

Addressing the amorphous content issue in quantitative phase analysis : the certification of NIST SRM 676a.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cline, J. P.; Von Dreele, R. B.; Winburn, R.

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Addressing the Amorphous Content Issue in Quantitative Phase Analysis: The Certification of NIST Standard Reference Material 676a

DOE Office of Scientific and Technical Information (OSTI.GOV)

J Cline; R Von Dreele; R Winburn

2011-12-31

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Improved Vemurafenib Dissolution and Pharmacokinetics as an Amorphous Solid Dispersion Produced by KinetiSol® Processing.

PubMed

Ellenberger, Daniel J; Miller, Dave A; Kucera, Sandra U; Williams, Robert O

2018-03-14

Vemurafenib is a poorly soluble, low permeability drug that has a demonstrated need for a solubility-enhanced formulation. However, conventional approaches for amorphous solid dispersion production are challenging due to the physiochemical properties of the compound. A suitable and novel method for creating an amorphous solid dispersion, known as solvent-controlled coprecipitation, was developed to make a material known as microprecipitated bulk powder (MBP). However, this approach has limitations in its processing and formulation space. In this study, it was hypothesized that vemurafenib can be processed by KinetiSol into the same amorphous formulation as MBP. The KinetiSol process utilizes high shear to rapidly process amorphous solid dispersions containing vemurafenib. Analysis of the material demonstrated that KinetiSol produced amorphous, single-phase material with acceptable chemical purity and stability. Values obtained were congruent to analysis conducted on the comparator material. However, the materials differed in particle morphology as the KinetiSol material was dense, smooth, and uniform while the MBP comparator was porous in structure and exhibited high surface area. The particles produced by KinetiSol had improved in-vitro dissolution and pharmacokinetic performance for vemurafenib compared to MBP due to slower drug nucleation and recrystallization which resulted in superior supersaturation maintenance during drug release. In the in-vivo rat pharmacokinetic study, both amorphous solid dispersions produced by KinetiSol exhibited mean AUC values at least two-fold that of MBP when dosed as a suspension. It was concluded that the KinetiSol process produced superior dosage forms containing vemurafenib with the potential for substantial reduction in patient pill burden.

Amorphous silicon research. Final technical progress report, 1 August 1994--28 February 1998

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S

1998-05-01

This report describes the status and accomplishments of work performed under this subcontract by United Solar Systems. United Solar researchers explored several new deposition regimes/conditions to investigate their effect on material/device performance. To facilitate optimum ion bombardment during growth, a large parameter space involving chamber pressure, rf power, and hydrogen dilution were investigated. United Solar carried out a series of experiments using discharge modulation at various pulsed-plasma intervals to study the effect of Si-particle incorporation on solar cell performance. Hydrogen dilution during deposition is found to improve both the initial and stable performance of a-Si and a-SiGe alloy cells. Researchersmore » conducted a series of temperature-ramping experiments on samples prepared with high and low hydrogen dilutions to study the effect of hydrogen effusion on solar cell performance. Using an internal photoemission method, the electrical bandgap of a microcrystalline p layer used in high-efficiency solar cells was measured to be 1.6 eV. New measurement techniques were developed to evaluate the interface and bulk contributions of losses to solar cell performance. Researchers replaced hydrogen with deuterium and found deuterated amorphous silicon alloy solar cells exhibit reduced light-induced degradation. The incorporation of a microcrystalline n layer in a multijunction cell is seen to improve cell performance. United Solar achieved a world-record single-junction a-Si alloy stable cell efficiency of 9.2% with an active area of 0.25 cm{sup 2} grown with high hydrogen dilution. They also achieved a world-record triple-junction, stable, active-area cell efficiency of 13.0% with an active area of 0.25 cm{sup 2}.« less

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

PubMed

Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

2015-11-01

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluidized bed reaction towards crystalline embedded amorphous Si anode with much enhanced cycling stability.

PubMed

Zhou, Yu; Guo, Huajun; Yan, Guochun; Wang, Zhixing; Li, Xinhai; Yang, Zhewei; Zheng, Anxiong; Wang, Jiexi

2018-04-10

A facile and large-scale fluidized bed reaction route was introduced for the first time to prepare crystalline embedded amorphous silicon nanoparticles with an average size of 50 nm as anode materials for lithium-ion batteries. By increasing the operating potential to control the electrochemically active degree, the resulting sample showed excellent cycle stability with a high capacity retention of 94.7% after 200 cycles at 1 A g-1 in the voltage range of 0.12-2.00 V.

Investigation of hydrogen evolution activity for the nickel, nickel-molybdenum nickel-graphite composite and nickel-reduced graphene oxide composite coatings

NASA Astrophysics Data System (ADS)

Jinlong, Lv; Tongxiang, Liang; Chen, Wang

2016-03-01

The nickel, nickel-molybdenum alloy, nickel-graphite and nickel-reduced graphene oxide composite coatings were obtained by the electrodeposition technique from a nickel sulfate bath. Nanocrystalline molybdenum, graphite and reduced graphene oxide in nickel coatings promoted hydrogen evolution reaction in 0.5 M H2SO4 solution at room temperature. However, the nickel-reduced graphene oxide composite coating exhibited the highest electrocatalytic activity for the hydrogen evolution reaction in 0.5 M H2SO4 solution at room temperature. A large number of gaps between 'cauliflower' like grains could decrease effective area for hydrogen evolution reaction in slight amorphous nickel-molybdenum alloy. The synergistic effect between nickel and reduced graphene oxide promoted hydrogen evolution, moreover, refined grain in nickel-reduced graphene oxide composite coating and large specific surface of reduced graphene oxide also facilitated hydrogen evolution reaction.

Amorphous Red Phosphorus Embedded in Sandwiched Porous Carbon Enabling Superior Sodium Storage Performances.

PubMed

Wu, Ying; Liu, Zheng; Zhong, Xiongwu; Cheng, Xiaolong; Fan, Zhuangjun; Yu, Yan

2018-03-01

The red P anode for sodium ion batteries has attracted great attention recently due to the high theoretical capacity, but the poor intrinsic electronic conductivity and large volume expansion restrain its widespread applications. Herein, the red P is successfully encapsulated into the cube shaped sandwich-like interconnected porous carbon building (denoted as P@C-GO/MOF-5) via the vaporization-condensation method. Superior cycling stability (high capacity retention of about 93% at 2 A g -1 after 100 cycles) and excellent rate performance (502 mAh g -1 at 10 A g -1 ) can be obtained for the P@C-GO/MOF-5 electrode. The superior electrochemical performance can be ascribed to the successful incorporation of red P into the unique carbon matrix with large surface area and pore volume, interconnected porous structure, excellent electronic conductivity and superior structural stability. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spectral characteristics and the extent of paleosols of the Palouse formation

NASA Technical Reports Server (NTRS)

Frazier, B. E.; Busacca, Alan; Cheng, Yaan; Wherry, David; Hart, Judy; Gill, Steve

1987-01-01

Three spectral models defining the spatial distribution of soil areas by levels of amorphous iron, organic carbon, and the ratio of amorphous iron to organic carbon were developed and field verification studies were conducted. The models used particular Thematic Mapper band ratios selected by statistical correlation with soil chemical data. The ability of the models to indicate erosion severity and to differentiate between iron enriched and carbonate paleosols is discussed. In addition, the effect of vegetation cover on paleosols is addressed.

Investigation of Carrageenan Aerogel Microparticles as a Potential Drug Carrier.

PubMed

Obaidat, Rana M; Alnaief, Mohammad; Mashaqbeh, Hadeia

2018-05-07

Carrageenan is an anionic polysaccharide offering many advantages to be used in drug delivery applications. These include availability, thermo-stability, low toxicity, and encapsulating properties. Combination of these properties with aerogel properties like large surface area and porosity make them an ideal candidate for drug adsorption and delivery applications. Emulsion-gelation technique was used to prepare carrageenan gel microparticles with supercritical CO 2 for drying and loading purposes. Ibuprofen has been selected as a model drug for drug loading inside. The prepared microparticles were characterized using particle size analysis, X-ray diffraction, differential scanning calorimetry, Fourier transform infrared spectroscopy, density measurements, surface area, and porosity measurements. Finally, dissolution was applied to the loaded preparations to test in vitro drug release. Ibuprofen was successfully loaded in the amorphous form inside the prepared microparticles with a significant enhancement in the drug release profile. In conclusion, prepared carrageenan aerogel microparticles showed an excellent potential for use as a drug carrier.

Solvothermal preparation of phthalocyanine nanorod/rGO composites and their application to visible-light-responsive photocatalysts

NASA Astrophysics Data System (ADS)

Zhang, Shuai; Lu, Yongting; Zhang, Fan; Qu, Jie; Lin, Bencai; Yuan, Ningyi; Fang, Bijun; Ding, Jian-Ning

2016-09-01

Phthalocyanine (Pc) nanorod/reduced graphene oxide (rGO) composites were prepared by a simple solvothermal method, in which Pc nanosheet and graphene oxide (GO) suspensions were mixed in methanol. As characterized by scanning electron microscopy, transmission electron microscopy, and selected area electron diffraction, Pc nanorods with an amorphous structure and an average diameter of 250nm are partially covered by rGO sheets. In the photodegradation experiments, all the composites with different rGO content show enhanced photocatalytic activity for Rhodamine B decomposition under visible-light compared to pure Pc nanorods or rGO sheets. The enhanced photocatalytic activity shall be ascribed to the large surface area offered by rGO and the charge-transfer from Pc to rGO as indicated by the photoluminescence measurement, in which fluorescence intensity of the composites is much weaker than that of Pc nanorods.

Formation and structure of Al-Zr metallic glasses studied by Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Li, J. H.; Zhao, S. Z.; Dai, Y.; Cui, Y. Y.; Liu, B. X.

2011-06-01

Based on the recently constructed n-body potential, both molecular dynamics and Monte Carlo simulations revealed that the Al-Zr amorphous alloy or metallic glass can be obtained within the composition range of 24-66 at. % Zr. The revealed composition range could be considered the intrinsic glass-forming range and it quantitatively indicates the glass-forming ability of the Al-Zr system. The underlying physics of the finding is that, within the composition range, the amorphous alloys are energetically favored to form. In addition, it is proposed that the energy difference between a solid solution and the amorphous phase could serve as the driving force of the crystalline to amorphous transition and the driving force should be sufficiently large for amorphization to take place. The minimum driving forces for fcc Al-based and hcp Zr-based Al-Zr solid solutions to amorphize are calculated to be about -0.05 and -0.03 eV/atom, respectively, whereas the maximum driving force is found to be -0.23 eV/atom at the alloy stoichiometry of Al60Zr40. A thermodynamics parameter γ¯, defined as the ratio of the driving force to the formation energy of the solid solution, is further proposed to indicate the glass-forming ability of an Al-Zr alloy. Thermodynamics calculations show that the glass-forming ability of the Al56Zr44 alloy is the largest, implying that the Al56Zr44 amorphous alloy is more ready to form than other alloys in the Al-Zr system. Besides, Voronoi analysis found that there exists a strong correlation between the coordinate number and structure. Amorphization could result in increase of coordinate numbers and about 1.5% volume-expansion. The volume-expansion induced by amorphization can be attributed to two factors, i.e., the total bond number of the Al-Zr amorphous phase is greater than that of the corresponding solid solution, and the averaged bond length of the Al-Zr amorphous phase is longer than that of the corresponding solid solution. For the Al-Zr alloys, especially for the Al-Zr amorphous phase, there exists a negative chemical micro-inhomogeneity in the alloys, suggesting that metallic bonds prefer to be formed between the atoms of dissimilar species. Finally, it is found that there is a weak correspondence between the bond-angle distributions of Al-Zr amorphous alloys and the solid solutions. It is further suggested that the configuration of Al-Zr amorphous alloys embodies some hybrid imprint of bcc, fcc, and hcp structures. More interestingly, the short-range order is also observed in the bond-angle distributions.

Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

DOE PAGES

Debelle, Aurelien; Boulle, Alexandre; Chartier, Alain; ...

2014-11-25

We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects andmore » defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.« less

Graphene as a transparent electrode for amorphous silicon-based solar cells

NASA Astrophysics Data System (ADS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

NASA Astrophysics Data System (ADS)

Sarradin, J.; Guessous, A.; Ribes, M.

Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

The IR emission features - Emission from PAH molecules and amorphous carbon particles

NASA Technical Reports Server (NTRS)

Allamandola, L. J.; Tielens, A. G. G. M.; Barker, J. R.

1987-01-01

Techniques for the assessment of the importance of the various forms of PAHs, and recent infrared observations concerning the PAH problem, are considered. Spectroscopic data suggest that the observed interstellar spectrum is due to both free molecule-sized PAHs producing the narrow features, and amorphous carbon particles contributing to the broad underlying components. Explanations for the multicomponent emission spectrum are discussed. A model of the emission mechanism for the example of chrysene is presented, and an exact treatment of the IR fluorescence from highly vibrationally excited large molecules shows that species containing 20-30 carbon atoms are responsible for the narrow features, although the spectra more closely resemble those of amorphous carbon particles. It is suggested that future emphasis should be placed on the spatial characteristics of the component spectra.

Inverted follicular keratosis: dermoscopic and reflectance confocal microscopic features.

PubMed

Armengot-Carbo, M; Abrego, A; Gonzalez, T; Alarcon, I; Alos, L; Carrera, C; Malvehy, J; Puig, S

2013-01-01

Inverted follicular keratosis (IFK) is a rare benign tumor which usually appears as a firm papule on the face. The diagnosis is generally made by histopathology because the clinical appearance is difficult to differentiate from other lesions. Dermoscopic features of IFK have not been established to date. Herein we describe the dermoscopic findings of 4 cases of IFK. Radial peripheral hairpin vessels surrounded by a whitish halo arranged around a central white-yellowish amorphous area were observed in 3 cases, and glomerular vessels were present in the central area of one of them. The fourth case also presented a central white amorphous area but showed arborizing vessels. Reflectance confocal microscopy (available in 1 case) revealed a broadened honeycomb pattern, epidermal projections and hairpin and glomerular vessels. To our knowledge this is the first case series describing the dermoscopic features of inverted follicular keratosis and the first confocal microscopy description of this entity.

Physical stability of drugs after storage above and below the glass transition temperature: Relationship to glass-forming ability.

PubMed

Alhalaweh, Amjad; Alzghoul, Ahmad; Mahlin, Denny; Bergström, Christel A S

2015-11-10

Amorphous materials are inherently unstable and tend to crystallize upon storage. In this study, we investigated the extent to which the physical stability and inherent crystallization tendency of drugs are related to their glass-forming ability (GFA), the glass transition temperature (Tg) and thermodynamic factors. Differential scanning calorimetry was used to produce the amorphous state of 52 drugs [18 compounds crystallized upon heating (Class II) and 34 remained in the amorphous state (Class III)] and to perform in situ storage for the amorphous material for 12h at temperatures 20°C above or below the Tg. A computational model based on the support vector machine (SVM) algorithm was developed to predict the structure-property relationships. All drugs maintained their Class when stored at 20°C below the Tg. Fourteen of the Class II compounds crystallized when stored above the Tg whereas all except one of the Class III compounds remained amorphous. These results were only related to the glass-forming ability and no relationship to e.g. thermodynamic factors was found. The experimental data were used for computational modeling and a classification model was developed that correctly predicted the physical stability above the Tg. The use of a large dataset revealed that molecular features related to aromaticity and π-π interactions reduce the inherent physical stability of amorphous drugs. Copyright © 2015 Elsevier B.V. All rights reserved.

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

PubMed

Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

2018-02-28

In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

Stabilisation of Ce-Cu-Fe amorphous alloys by addition of Al

NASA Astrophysics Data System (ADS)

Kelhar, Luka; Ferčič, Jana; Boulet, Pascal; Maček-Kržmanc, Marjeta; Šturm, Sašo; Lamut, Martin; Markoli, Boštjan; Kobe, Spomenka; Dubois, Jean-Marie

2016-10-01

The present work describes the formation of amorphous alloys in the (Al1-xCex)62Cu25Fe13 quaternary system (0 ≤ x ≤ 1). When the amount of Ce falls in the range 0.67 ≤ x ≤ 0.83, the alloys obtained exhibit a completely amorphous structure confirmed by powder X-ray diffraction. Otherwise, at compositions x = 0.5, 0.58, 0.92 and 1, a primary crystalline phase forms together with an amorphous matrix. The crystallisation temperature (Tx) decreases with increasing Ce content, varying from 593 K for x = 0.5-383 K for x = 1. Composition x = 0.75 is considered as the best glass former, exhibiting a large supercooled liquid region of 40 K width that precedes crystallisation. In order to form bulk amorphous alloys, ribbons with this later composition were consolidated into few millimetre thick discs using pulsed electric current sintering at different temperatures, yet preserving the amorphous structure. Meanwhile, increasing temperature above 483 K triggers crystallisation of a primary phase isostructural to AlCe3. Further increase in the temperature up to 573 K yields a higher fraction of the crystalline phase. Testing mechanical properties, using nanoindentation, revealed that both elastic modulus (E) and hardness (H) depend on the Al content, ranging from E = 85.6 ± 3.7 GPa and H = 6.2 ± 0.7 GPa for x = 0.5 down to E = 39.8 ± 1.0 GPa and H = 3.1 ± 0.2 GPa for x = 0.92.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

PubMed

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Microstructure and mechanical properties of the NiNbZrTiAl amorphous alloys with 10 and 25 at.% Nb content.

PubMed

Czeppe, T; Ochin, P; Sypień, A; Major, L

2010-03-01

The results of investigation of two different Ni-based glasses with compositions Ni(58)Nb(10)Zr(13)Ti(12)Al(7) and Ni(58)Nb(25)Zr(8)Ti(6)Al(3) are presented. The structure of the melt spun ribbons was amorphous. The supercooled liquid range decreased and primary crystallization temperature increased with increasing Nb content while the parameter T(g)/T(m) slightly increased. The crystallization process proceeded in a different way. The ribbon containing 10 at.% Nb showed typical primary crystallization of the 50 nm grains of the NiTi(Nb) cubic phase; the ribbon containing 25 at.% of Nb revealed high thermal stability of the amorphous phase, which crystallized only in a small amount in the range of primary crystallization, preserving large fraction of the amorphous phase even high above the end of the crystallization. The tensile load-displacement curves were also different. In both cases, the ribbons revealed quite a large range of the plastic elongation. The ribbon containing 10% Nb showed stress relaxation and was maximally elongated up to 0.6. The ribbon with 25 at.% Nb revealed a hardening effect and the slightly smaller maximal elongation following it. The microstructure of the deformed specimens showed deformation bands parallel to the tensile axis, microcracks formation along shear bands and river-like pattern at the fracture surfaces. In both cases, high resolution electron microscope did not reveal any crystallization after deformation.

Surface Brillouin scattering study of the surface excitations in amorphous silicon layers produced by ion bombardment

NASA Astrophysics Data System (ADS)

Zhang, X.; Comins, J. D.; Every, A. G.; Stoddart, P. R.; Pang, W.; Derry, T. E.

1998-11-01

Thin amorphous silicon layers on crystalline silicon substrates have been produced by argon-ion bombardment of (001) silicon surfaces. Thermally induced surface excitations characteristic of this example of a soft-on-hard system have been investigated by surface Brillouin scattering (SBS) as a function of scattering-angle and amorphous-layer thickness. At large scattering angles or for sufficiently large layer thickness, a second peak is present in the SBS spectrum near the low-energy threshold for the continuum of bulk excitations of the system. The measured spectra are analyzed on the basis of surface elastodynamic Green's functions, which successfully simulate their detailed appearance and identify the second peak as either a Sezawa wave (true surface wave) or a pseudo-Sezawa wave (attenuated surface wave) depending on the scattering parameters. The attributes of the pseudo-Sezawa wave are described; these include its asymmetrical line shape and variation in intensity with k∥d (the product of the surface excitation wave vector and the layer thickness), and its emergence as the Sezawa wave from the low-energy side of the Lamb shoulder at a critical value of k∥d. Furthermore, the behavior of a pronounced minimum in the Lamb shoulder near the longitudinal wave threshold observed in the experiments is reported and is found to be in good agreement with the calculated spectra. The elastic constants of the amorphous silicon layer are determined from the velocity dispersion of the Rayleigh surface acoustic wave and the minimum in the Lamb shoulder.

Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oswald, R.; Morris, J.

1994-11-01

The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact,more » maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.« less

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor-liquid-solid technique

NASA Astrophysics Data System (ADS)

LeBoeuf, J. L.; Brodusch, N.; Gauvin, R.; Quitoriano, N. J.

2014-12-01

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor-liquid-solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the {1 0 0} surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

On the evolution and activity of cometary nuclei.

PubMed

Prialnik, D; Bar-Nun, A

1987-02-15

The thermal evolution of a spherical cometary nucleus (initial radius of 2.5 km), composed initially of very cold amorphous ice and moving in comet Halley's orbit, is simulated numerically for 280 revolutions. It is found that the phase transition from amorphous to crystalline ice constitutes a major internal heat source. The transition does not occur continuously, but in five distinct rounds, during the following revolutions: 1, 7, 40-41, 110-112, and 248-252. Due to the (slow) heating of the amorphous ice between crystallization rounds, the phase transition front advances into the nucleus to progressively greater depths: 36 m on the first round, and then 91 m, 193 m, 381 m, and 605 m respectively. Each round of crystallization starts when when the boundary between amorphous and crystalline ice is brought to approximately 15 m below the surface, as the nucleus radius decreases due to sublimation. At the time of crystallization, the temperature of the transformed ice rises to 180 K. According to experimental studies of gas-laden amorphous ice, a large fraction of the gas trapped in the ice at low temperatures is released. Whereas some of the released gas may find its way out through cracks in the crystalline ice layer, the rest is expected to accumulate in gas pockets that may eventually explode, forming "volcanic calderas." The gas-laden amorphous ice thus exposed may be a major source of gas and dust jets into the coma, such as those observed on comet Halley by the Giotto spacecraft. The activity of new comets and, possibly, cometary outbursts and splits may also be explained in terms of explosive gas release following the transition from amorphous to crystalline ice.

X-ray diffraction investigation of amorphous calcium phosphate and hydroxyapatite under ultra-high hydrostatic pressure

NASA Astrophysics Data System (ADS)

Lam, Elisa; Gu, Qinfen; Swedlund, Peter J.; Marchesseau, Sylvie; Hemar, Yacine

2015-11-01

The changes in the crystal structures of synthetically prepared amorphous calcium phosphate (ACP) and hydroxyapatite (HAP) in water (1:1 mass ratio) were studied by synchrotron X-ray diffraction (XRD) under ultra-high hydrostatic pressures as high as 2.34 GPa for ACP and 4 GPa for HAP. At ambient pressure, the XRD patterns of the ACP and HAP samples in capillary tubes and their environmental scanning electron micrographs indicated amorphous and crystalline characteristics for ACP and HAP, respectively. At pressures greater than 0.25 GPa, an additional broad peak was observed in the XRD pattern of the ACP phase, indicating a partial phase transition from an amorphous phase to a new high-pressure amorphous phase. The peak areas and positions of the ACP phase, as obtained through fitting of the experimental data, indicated that the ACP exhibited increased pseudo-crystalline behavior at pressures greater than 0.96 GPa. Conversely, no structural changes were observed for the HAP phase up to the highest applied pressure of 4 GPa. For HAP, a unit-cell reduction during compression was evidenced by a reduction in both refined lattice parameters a and c. Both ACP and HAP reverted to their original structures when the pressure was fully released to ambient pressure.

Mesoscale modeling of strain induced solid state amorphization in crystalline materials

NASA Astrophysics Data System (ADS)

Lei, Lei

Solid state amorphization, and in particular crystalline to amorphous transformation, can be observed in metallic alloys, semiconductors, intermetallics, minerals, and also molecular crystals when they undergo irradiation, hydrogen gas dissolution, thermal interdiffusion, mechanical alloying, or mechanical milling. Although the amorphization mechanisms may be different, the transformation occurs due to the high level of disorder introduced into the material. Milling induced solid state amorphization is proposed to be the result of accumulation of crystal defects, specifically dislocations, as the material is subjected to large deformations during the high energy process. Thus, understanding the deformation mechanisms of crystalline materials will be the first step in studying solid state amorphization in crystalline materials, which not only has scientific contributions, but also technical consequences. A phase field dislocation dynamics (PFDD) approach is employed in this work to simulate plastic deformation of molecular crystals. This PFDD model has the advantage of tracking all of the dislocations in a material simultaneously. The model takes into account the elastic interaction between dislocations, the lattice resistance to dislocation motion, and the elastic interaction of dislocations with an external stress field. The PFDD model is employed to describe the deformation of molecular crystals with pharmaceutical applications, namely, single crystal sucrose, acetaminophen, gamma-indomethacin, and aspirin. Stress-strain curves are produced that result in expected anisotropic material response due to the activation of different slip systems and yield stresses that agree well with those from experiments. The PFDD model is coupled to a phase transformation model to study the relation between plastic deformation and the solid state amorphization of crystals that undergo milling. This model predicts the amorphous volume fraction in excellent agreement with experimental observation. Finally, we incorporate the effect of stress free surfaces to model the behavior of dislocations close to these surfaces and in the presence of voids.

The properties of the nano-minerals and hazardous elements: Potential environmental impacts of Brazilian coal waste fire.

PubMed

Civeira, Matheus S; Pinheiro, Rafael N; Gredilla, Ainara; de Vallejuelo, Silvia Fdez Ortiz; Oliveira, Marcos L S; Ramos, Claudete G; Taffarel, Silvio R; Kautzmann, Rubens M; Madariaga, Juan Manuel; Silva, Luis F O

2016-02-15

Brazilian coal area (South Brazil) impacted the environment by means of a large number of coal waste piles emplaced over the old mine sites and the adjacent areas of the Criciúma, Urussanga, and Siderópolis cities. The area studied here was abandoned and after almost 30 years (smokeless visual) some companies use the actual minerals derived from burning coal cleaning rejects (BCCRs) complied in the mentioned area for industry tiles or refractory bricks. Mineralogical and geochemical similarities between the BCCRs and non-anthropogenic geological environments are outlined here. Although no visible flames were observed, this study revealed that auto-combustion existed in the studied area for many years. The presence of amorphous phases, mullite, hematite and other Fe-minerals formed by high temperature was found. There is also pyrite, Fe-sulphates (eg. jarosite) and unburnt coal present, which are useful for comparison purposes. Bad disposal of coal-dump wastes represents significant environmental concerns due to their potential influence on atmosphere, river sediments, soils and as well as on the surface and groundwater in the surroundings of these areas. The present study using advanced analytical techniques were performed to provide an improved understanding of the complex processes related with sulphide-rich coal waste oxidation, spontaneous combustion and mineral formation. It is reporting huge numbers of rare minerals with alunite, montmorillonite, szomolnokite, halotrichite, coquimbite and copiapite at the BCCRs. The data showed the presence of abundant amorphous Si-Al-Fe-Ti as (oxy-)hydroxides and Fe-hydro/oxides with goethite and hematite with various degrees of crystallinity, containing hazardous elements, such as Cu, Cr, Hf, Hg, Mo, Ni, Se, Pb, Th, U, Zr, and others. By Principal Component Analysis (PCA), the mineralogical composition was related with the range of elemental concentration of each sample. Most of the nano-minerals and ultra-fine particles found in the burned coal-dump wastes are the same as those commonly associated with coal cleaning rejects, in which oxidation of sulphides plays an important role to environment and human health. Copyright © 2015 Elsevier B.V. All rights reserved.

Polarization-maintaining performance of large effective area, higher order modes fiber in a coiled configuration

NASA Astrophysics Data System (ADS)

Ahmad, Raja; Nicholson, Jeffrey W.; Abedin, Kazi S.; Westbrook, Paul S.; Headley, Clifford; Wisk, Patrick W.; Monberg, Eric M.; Yan, Man F.; DiGiovanni, David J.

2018-02-01

Scaling the power-level of fiber sources has many practical advantages, while also enabling fundamental studies on the light-matter interaction in amorphous guiding media. In order to scale the power-level of fiber-sources without encountering nonlinear impairments, a strategy is to increase the effective-area of the guided optical-mode. Increasing the effective-area of the fundamental mode in a fiber, however, presents the challenges of increased susceptibility to mode-distortion and effective-area-reduction under the influence of bends. Therefore, higher-order-mode (HOM) fibers, which guide light in large effective-area (Aeff) Bessel-like modes, are a good candidate for scaling the power-level of robust fiber-sources. Many applications of high-power fiber-sources also demand a deterministic control on the polarization-state of light. Furthermore, a polarization-maintaining (PM)-type HOM fiber can afford the added possibility of coherent-beam combination and polarization multiplexing of high-power fiber-lasers. Previously, we reported polarization-maintaining operation in a 1.3 m length of PM-HOM fiber that was held straight. The PM-HOM fiber guided Bessel-like modes with Aeff ranging from 1200-2800 μm2. In this work, we report, for the first time, that the polarization-extinction-ratio (PER) of the HOM exceeds 10 dB in an 8 m long fiber that is coiled down to a diameter of 40 cm. This opens a path towards compact and polarization-controlled high-power fiber-systems.

Continuum limit of the vibrational properties of amorphous solids.

PubMed

Mizuno, Hideyuki; Shiba, Hayato; Ikeda, Atsushi

2017-11-14

The low-frequency vibrational and low-temperature thermal properties of amorphous solids are markedly different from those of crystalline solids. This situation is counterintuitive because all solid materials are expected to behave as a homogeneous elastic body in the continuum limit, in which vibrational modes are phonons that follow the Debye law. A number of phenomenological explanations for this situation have been proposed, which assume elastic heterogeneities, soft localized vibrations, and so on. Microscopic mean-field theories have recently been developed to predict the universal non-Debye scaling law. Considering these theoretical arguments, it is absolutely necessary to directly observe the nature of the low-frequency vibrations of amorphous solids and determine the laws that such vibrations obey. Herein, we perform an extremely large-scale vibrational mode analysis of a model amorphous solid. We find that the scaling law predicted by the mean-field theory is violated at low frequency, and in the continuum limit, the vibrational modes converge to a mixture of phonon modes that follow the Debye law and soft localized modes that follow another universal non-Debye scaling law.

Continuum limit of the vibrational properties of amorphous solids

PubMed Central

Mizuno, Hideyuki; Ikeda, Atsushi

2017-01-01

The low-frequency vibrational and low-temperature thermal properties of amorphous solids are markedly different from those of crystalline solids. This situation is counterintuitive because all solid materials are expected to behave as a homogeneous elastic body in the continuum limit, in which vibrational modes are phonons that follow the Debye law. A number of phenomenological explanations for this situation have been proposed, which assume elastic heterogeneities, soft localized vibrations, and so on. Microscopic mean-field theories have recently been developed to predict the universal non-Debye scaling law. Considering these theoretical arguments, it is absolutely necessary to directly observe the nature of the low-frequency vibrations of amorphous solids and determine the laws that such vibrations obey. Herein, we perform an extremely large-scale vibrational mode analysis of a model amorphous solid. We find that the scaling law predicted by the mean-field theory is violated at low frequency, and in the continuum limit, the vibrational modes converge to a mixture of phonon modes that follow the Debye law and soft localized modes that follow another universal non-Debye scaling law. PMID:29087941

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Wang, L.; Kirk, E.; Wäckerlin, C.; Schneider, C. W.; Hojeij, M.; Gobrecht, J.; Ekinci, Y.

2014-06-01

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Amorphous mesoporous GeO x anode for Na-ion batteries with high capacity and long lifespan.

PubMed

Shen, Kangze; Lin, Ning; Xu, Tianjun; Han, Ying; Qian, Yitai

2018-01-01

It is recently demonstrated that amorphous Ge anode shows higher reversible Na-ion storage capacity (590 mA h g -1 ) than crystallized Ge anode (369 mA h g -1 ). Here, amorphous GeO x anode is prepared by a simple wet-chemistry reduction route at room temperature. The obtained amorphous GeO x shows a porous hierarchical architecture, accompanied with a Brunauer-Emmett-Teller surface area of 159 m 2  g -1 and an average pore diameter of 14 nm. This unique structure enables the GeO x anode to enhance the Na-ion/electron diffusion rate, and buffer the volume change. As anode for Na-ion battery, high reversible capacity over 400 mA h g -1 , fine rate capability with a capacity of 200 mA h g -1 maintained at 3.0 A g -1 and long-term cycling stability with 270 mA h g -1 even over 1000 cycles at 1.0 A g -1 are obtained.

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

2016-05-01

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

Rapid synthesis of rutile TiO2 nano-flowers by dealloying Cu60Ti30Y10 metallic glasses

NASA Astrophysics Data System (ADS)

Wang, Ning; Pan, Ye; Wu, Shikai; Zhang, Enming; Dai, Weiji

2018-01-01

The 3D nanostructure rutile TiO2 photocatalyst was rapidly synthesized by dealloying method using Cu60Ti30Y10 amorphous ribbons as precursors. The preparation period was kept down to just 3 h, which is much shorter than those of the samples by dealloying Cu60Ti30Al10, Cu70Ti30 and Cu60Ti30Sn10. The synthesized sample was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and XPS reveal the successful synthesis of rutile TiO2. The SEM and TEM images show that the synthesized rutile TiO2 nano-material presents homogeneous distributed 3D nanoflowers structure, which is composed of large quantities of fine rice-like nanorods (40-150 nm in diameter and 100-250 nm in length). BET specific surface areas of the samples were investigated by N2 adsorption-desorption isotherms, the fabricated rutile TiO2 exhibits very high specific surface area (194.08 m2/g). The photocatalytic activities of the samples were evaluated by degrading rhodamine B (RhB) dye (10 mg/L) under the irradiation of both simulated visible light (λ > 420 nm) and ultraviolet (UV) light (λ = 365 nm). The results show that the photocatalytic activity of rutile TiO2 prepared by dealloying Cu60Ti30Y10 amorphous ribbons is higher than those of commercial rutile and the sample synthesized by dealloying Cu70Ti30 precursors. The advantages of both short preparation period and superior photocatalytic activity suggest that Cu60Ti30Y10 metallic glasses are really a kind of perfect titanium source for rapidly fabricating high efficient TiO2 nano-materials. In addition, the influence of chemical composition of the amorphous precursors on preparation period of the rutile TiO2 nano-material was investigated from the point of view of standard electrode potentials.

Effect of electrolyte temperature on the formation of self-organized anodic niobium oxide microcones in hot phosphate-glycerol electrolyte

NASA Astrophysics Data System (ADS)

Yang, S.; Aoki, Y.; Habazaki, H.

2011-07-01

Nanoporous niobium oxide films with microcone-type surface morphology were formed by anodizing at 10 V in glycerol electrolyte containing 0.6 mol dm -3 K 2HPO 4 and 0.2 mol dm -3 K 3PO 4 in a temperature range of 428-453 K. The microcones appeared after prolonged anodizing, but the required time was largely reduced by increasing electrolyte temperature. The anodic oxide was initially amorphous at all temperatures, but crystalline oxide nucleated during anodizing. The anodic oxide microcones, which were crystalline, appeared on surface as a consequence of preferential chemical dissolution of initially formed amorphous oxide. The chemical dissolution of an initially formed amorphous layer was accelerated by increasing the electrolyte temperature, with negligible influence of the temperature on the morphology of microcones up to 448 K.

The IR emission features - Emission from PAH molecules and amorphous carbon particles

NASA Technical Reports Server (NTRS)

Allamandola, L. J.; Tielens, A. G. G. M.; Barker, J. R.

1987-01-01

Given the current understanding of polycyclic aromatic hydrocarbons (PAHs), the spectroscopic data suggest that are at least two components which contribute to the interstellar emission spectrum: (1) free molecule-sized PAHs producing the narrow features and (2) amorphous carbon particles (which are primarily composed of an irregular 'lattice' of PAHs) contributing to the broad underlying components. An exact treatment of the IR fluorescence from highly vibrationally excited large molecules demonstrates that species containing between 20 and 30 carbon atoms are responsible for the narrow features, although the spectra match more closely with the spectra of amorphous carbon particles. It is concluded that, since little is known about the spectroscopic properties of free PAHs and PAH clusters, much laboratory work is required along with an observational program focusing on the spatial characteristics of the spectra.

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Preparation of polymeric diacetylene thin films for nonlinear optical applications

NASA Technical Reports Server (NTRS)

Frazier, Donald O. (Inventor); Mcmanus, Samuel P. (Inventor); Paley, Mark S. (Inventor); Donovan, David N. (Inventor)

1995-01-01

A method for producing polymeric diacetylene thin films having desirable nonlinear optical characteristics has been achieved by producing amorphous diacetylene polymeric films by simultaneous polymerization of diacetylene monomers in solution and deposition of polymerized diacetylenes on to the surface of a transparent substrate through which ultraviolet light has been transmitted. These amorphous polydiacetylene films produced by photo-deposition from solution possess very high optical quality and exhibit large third order nonlinear optical susceptibilities, such properties being suitable for nonlinear optical devices such as waveguides and integrated optics.

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

PubMed Central

Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

2016-01-01

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

Effective utilizations of palm oil mill fly ash for synthetic amorphous silica and carbon zeolite composite synthesis

NASA Astrophysics Data System (ADS)

Utama, P. S.; Saputra, E.; Khairat

2018-04-01

Palm Oil Mill Fly Ash (POMFA) the solid waste of palm oil industry was used as a raw material for synthetic amorphous silica and carbon zeolite composite synthesis in order to minimize the wastes of palm oil industry. The alkaline extraction combine with the sol-gel precipitation and mechanical fragmentation was applied to produce synthetic amorphous silica. The byproduct, extracted POMFA was rich in carbon and silica content in a significant amount. The microwave heated hydrothermal process used to synthesize carbon zeolite composite from the byproduct. The obtained silica had chemical composition, specific surface area and the micrograph similar to commercial precipitated silica for rubber filler. The microwave heated hydrothermal process has a great potential for synthesizing carbon zeolite composite. The process only needs one-step and shorter time compare to conventional hydrothermal process.

Arsenic removal from water using a novel amorphous adsorbent developed from coal fly ash.

PubMed

Zhang, Kaihua; Zhang, Dongxue; Zhang, Kai

2016-01-01

A novel effective adsorbent of alumina/silica oxide hydrate (ASOH) for arsenic removal was developed through simple chemical reactions using coal fly ash. The iron-modified ASOH with enhancing adsorption activity was further developed from raw fly ash based on the in situ technique. The adsorbents were characterized by X-ray diffraction, Fourier transform infrared spectrometry, scanning electron micrograph, laser particle size and Brunauer-Emmet-Teller surface area. The results show that the adsorbents are in amorphous and porous structure, the surface areas of which are 8-12 times that of the raw ash. The acidic hydrothermal treatment acts an important role in the formation of the amorphous structure of ASOH rather than zeolite crystal. A series of adsorption experiments for arsenic on them were studied. ASOH can achieve a high removal efficiency for arsenic of 96.4% from water, which is more than 2.5 times that of the raw ash. Iron-modified ASOH can enhance the removal efficiency to reach 99.8% due to the in situ loading of iron (Fe). The condition of synthesis pH = 2-4 is better for iron-modified ASOH to adsorb arsenic from water.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Ultrapermeable, reverse-selective nanocomposite membranes.

PubMed

Merkel, T C; Freeman, B D; Spontak, R J; He, Z; Pinnau, I; Meakin, P; Hill, A J

2002-04-19

Polymer nanocomposites continue to receive tremendous attention for application in areas such as microelectronics, organic batteries, optics, and catalysis. We have discovered that physical dispersion of nonporous, nanoscale, fumed silica particles in glassy amorphous poly(4-methyl-2-pentyne) simultaneously and surprisingly enhances both membrane permeability and selectivity for large organic molecules over small permanent gases. These highly unusual property enhancements, in contrast to results obtained in conventional filled polymer systems, reflect fumed silica-induced disruption of polymer chain packing and an accompanying subtle increase in the size of free volume elements through which molecular transport occurs, as discerned by positron annihilation lifetime spectroscopy. Such nanoscale hybridization represents an innovative means to tune the separation properties of glassy polymeric media through systematic manipulation of molecular packing.

One-dimensional nanostructured materials for lithium-ion battery and supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Chan, Candace Kay

The need for improved electrochemical storage devices has necessitated research on new and advanced electrode materials. One-dimensional nanomaterials such as nanowires, nanotubes, and nanoribbons, can provide a unique opportunity to engineer electrochemical devices to have improved electronic and ionic conductivity as well as electrochemical and structural transformations. Silicon and germanium nanowires (NWs) were studied as negative electrode materials for lithiumion batteries because of their ability to alloy with large amounts of lithium, leading to 4-10 times higher specific capacities than the graphite standard. These nanowires could be grown vertically off of metallic current collector substrates using the gold-catalyzed vapor-liquid-solid synthesis. Electrochemical measurements of the SiNWs showed that capacities greater than 3,500 mAh/g could be obtained for tens of cycles, while hundreds of cycles could be obtained at lower capacities. As opposed to bulk Si, the SiNWs were observed to maintain their morphology during cycling and did not pulverize due to the large volume changes. Detailed TEM and XRD characterization showed that the SiNWs became amorphous during the first lithiation (charge) and formed a two-phase region between crystalline Si and amorphous Li xSi. Afterwards, the SiNWs remained amorphous and subsequent reaction was through a single-phase cycling of amorphous Si. The good cycling behavior compared to bulk and micron-sized Si particles was attributed to the nanowire morphology and electrode design. The surface chemistry and solid-electrolyte interphase (SEI) were studied using XPS as a function of charge and discharge potential. The common reduction productions expected in the electrolyte (1 M LiPF6 in 1:1 EC/DEC) were observed, with the main component being Li2CO3. The morphology of the SEI was found to change at different potentials, indicating a dynamic process involving deposition, dissolution, and re-deposition on the SiNWs. Longterm cycling performance of the SiNWs in different electrolytes, with various surface modifications and coatings, and other experimental parameters were evaluated. The electrochemical reaction of GeNWs with lithium resulted in capacities of ˜1000 mAh/g for tens of cycles. The GeNWs were also observed to become amorphous after the first charge. Interestingly, very large irreversible capacities were observed in the GeNWs, indicating surface instabilities or reactivity with the electrolyte. To passivate the surface, a thin layer of amorphous Si was used to coat the GeNWs and make Ge-Si coreshell nanowires. This passivation helped to reduce the irreversibly capacity loss and gave reversible capacities typical for the GeNWs. Two positive electrode materials for Li-ion batteries were synthesized in nano-morphologies and characterized. Transformation of layered structured V2O5 nanoribbons into the fully lithiated o-Li 3V2O5 phase was found to depend not only on the width but also the thickness of the nanoribbons. For the first time, complete delithiation of o-Li3V2O5 back to the single-crystalline, pristine V2O5 nanoribbon was observed, indicating a 30% higher energy density. Nanostructured BiOCl, a conversion material, was also synthesized and characterized for its Li insertion properties. Networks of silver nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) were explored as highly conducting, high surface area, and printable materials for flexible, light-weight supercapacitors. Use of the solution-processible AgNWs and SWNTs, as well as a polymer electrolyte, facilitated the fabrication of an entirely printable device on plastic substrates. The devices showed promising results for high energy and power density supercapacitors, with energy and power densities reaching 24 Wh/kg and 42 kW/kg for the AgNW/SWNT composite.

Investigation of laser ablation of CVD diamond film

NASA Astrophysics Data System (ADS)

Chao, Choung-Lii; Chou, W. C.; Ma, Kung-Jen; Chen, Ta-Tung; Liu, Y. M.; Kuo, Y. S.; Chen, Ying-Tung

2005-04-01

Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, high hardness value and extreme brittleness have made diamond extremely difficult to be machined by conventional mechanical grinding and polishing. In the present study, the microwave CVD method was employed to produce epitaxial diamond films on silicon single crystal. Laser ablation experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. It was found that during the laser ablation, peaks of the diamond grains were removed mainly by the photo-thermal effects introduced by excimer laser. The diamond structures of the protruded diamond grains were transformed by the laser photonic energy into graphite, amorphous diamond and amorphous carbon which were removed by the subsequent laser shots. As the protruding peaks gradually removed from the surface the removal rate decreased. Surface roughness (Ra) was improved from above 1μm to around 0.1μm in few minutes time in this study. However, a scanning technique would be required if a large area was to be polished by laser and, as a consequence, it could be very time consuming.

Electron beam-induced radiation damage: the bubbling response in amorphous dried sodium phosphate buffer.

PubMed

Massover, William H

2010-06-01

Irradiation of an amorphous layer of dried sodium phosphate buffer (pH = 7.0) by transmission electron microscopy (100-120 kV) causes rapid formation of numerous small spherical bubbles [10-100 A (= 1-10 nm)] containing an unknown gas. Bubbling is detected even with the first low-dose exposure. In a thin layer (ca. 100-150 A), bubbling typically goes through nucleation, growth, possible fusion, and end-state, after which further changes are not apparent; co-irradiated adjacent areas having a slightly smaller thickness never develop bubbles. In moderately thicker regions (ca. over 200 A), there is no end-state. Instead, a complex sequence of microstructural changes is elicited during continued intermittent high-dose irradiation: nucleation, growth, early simple fusions, a second round of extensive multiple fusions, general reduction of matrix thickness (producing flattening and expansion of larger bubbles, occasional bubble fission, and formation of very large irregularly-shaped bubbles by a third round of compound fusion events), and slow shrinkage of all bubbles. The ongoing lighter appearance of bubble lumens, maintenance of their rounded shape, and extensive changes in size and form indicate that gas content continues throughout their surprisingly long lifetime; the thin dense boundary layer surrounding all bubbles is proposed to be the main mechanism for their long lifetime.

Aligned silica nanowires on the inner wall of bubble-like silica film: the growth mechanism and photoluminescence.

PubMed

Chen, Yiqing; Zhou, Qingtao; Jiang, Haifeng; Su, Yong; Xiao, Haihua; Zhu, Li-Ang; Xu, Liang

2006-02-28

Large area, aligned amorphous silica nanowires grow on the inner wall of bubble-like silica film, which is prepared by thermal evaporation of a molten gallium-silicon alloy in a flow of ammonia. These nanowires are 10-20 nm in diameter and 0.5-1.5 µm in length. The bubble-like silica film functions as a substrate, guiding the growth of silica nanowires by a vapour-solid process. This work helps us to clearly elucidate the growth mechanism of aligned amorphous silica nanowires, ruling out the possibility of liquid gallium acting as a nucleation substrate for the growth of the aligned silica nanowires. A broad emission band from 290 to 600 nm is observed in the photoluminescence (PL) spectrum of these nanowires. There are seven PL peaks: two blue emission peaks at 430 nm (2.88 eV) and 475 nm (2.61 eV); and five ultraviolet emission peaks at 325 nm (3.82 eV), 350 nm (3.54 eV), 365 nm (3.40 eV), 385 nm (3.22 eV) and 390 nm (3.18 eV), which may be related to various oxygen defects.

Controllable Si (100) micro/nanostructures by chemical-etching-assisted femtosecond laser single-pulse irradiation

NASA Astrophysics Data System (ADS)

Li, Xiaowei; Xie, Qian; Jiang, Lan; Han, Weina; Wang, Qingsong; Wang, Andong; Hu, Jie; Lu, Yongfeng

2017-05-01

In this study, silicon micro/nanostructures of controlled size and shape are fabricated by chemical-etching-assisted femtosecond laser single-pulse irradiation, which is a flexible, high-throughput method. The pulse fluence is altered to create various laser printing patterns for the etching mask, resulting in the sequential evolution of three distinct surface micro/nanostructures, namely, ring-like microstructures, flat-top pillar microstructures, and spike nanostructures. The characterized diameter of micro/nanostructures reveals that they can be flexibly tuned from the micrometer (˜2 μm) to nanometer (˜313 nm) scales by varying the laser pulse fluence in a wide range. Micro-Raman spectroscopy and transmission electron microscopy are utilized to demonstrate that the phase state changes from single-crystalline silicon (c-Si) to amorphous silicon (a-Si) after single-pulse femtosecond laser irradiation. This amorphous layer with a lower etching rate then acts as a mask in the wet etching process. Meanwhile, the on-the-fly punching technique enables the efficient fabrication of large-area patterned surfaces on the centimeter scale. This study presents a highly efficient method of controllably manufacturing silicon micro/nanostructures with different single-pulse patterns, which has promising applications in the photonic, solar cell, and sensors fields.

Correlation between oxygen stoichiometry, structure, and opto-electrical properties in amorphous In2O3:H films

NASA Astrophysics Data System (ADS)

Koida, Takashi; Shibata, Hajime; Kondo, Michio; Tsutsumi, Koichi; Sakaguchi, Akio; Suzuki, Michio; Fujiwara, Hiroyuki

2012-03-01

We have characterized amorphous In2O3:H (H : ˜4 at.%) transparent conducting films by Rutherford backscattering spectrometry (RBS), thermal desorption spectroscopy, spectroscopic ellipsometry, and Hall measurements. The amorphous In2O3:H films have been fabricated at room temperature by sputtering of an In2O3 ceramic target under Ar, O2, and H2O vapor with variation of a flow ratio r(O2) = O2/(O2+Ar). We observe (i) signals originating from Ar in RBS spectra for all the films and (ii) desorption of H2O and Ar gases during post thermal annealing of the films. Furthermore, O2 desorption together with H2O and Ar is observed for the films grown at r(O2) > 0.375%, whereas In desorption together with H2O and Ar is observed for the films grown at r(O2) < 0.375%. These results suggest that the films have void and/or multi-vacancy rich structures inside the amorphous network, and the variety of atoms, such as Ar, H2O, and weakly bonded O and In, is present in the void structures for the films grown at O2-rich and O2-poor conditions, respectively. Corresponding to the structural changes, optical and electrical properties also change at r(O2) = 0.375%. For the films grown at r(O2) < 0.375%, we observe a broad absorption in the visible wavelengths that cannot be explained by free carrier absorption. In this film, the carrier mobility reduces rapidly with increasing carrier density. Analysis of spectroscopic ellipsometry and Hall measurements reveals that a large decrease in mobility is due to a large increase in carrier effective mass, in addition to the effect of ionized impurity scattering. In this article, we discuss the optical and transport properties with the variation of oxygen stoichiometry and microscopic structures in the amorphous In2O3:H films.

Investigation of the influence of pretreatment parameters on the surface characteristics of amorphous metal for use in power industry

NASA Astrophysics Data System (ADS)

Nieroda, Jolanta; Rybak, Andrzej; Kmita, Grzegorz; Sitarz, Maciej

2018-05-01

Metallic glasses are metallic materials, which exhibit an amorphous structure. These are mostly three or more component alloys, and some of them are magnetic metals. Materials of this kind are characterized by high electrical resistivity and at the same time exhibit very good magnetic properties (e.g. low-magnetization loss). The above mentioned properties are very useful in electrical engineering industry and this material is more and more popular as a substance for high-efficiency electrical devices production. This industry area is still evolving, and thus even higher efficiency of apparatus based on amorphous material is expected. A raw material must be carefully investigated and characterized before the main production process is started. Presented work contains results of complementary examination of amorphous metal Metglas 2605. Studies involve two ways to obtain clean and oxidized surface with high reactivity, namely degreasing followed by annealing process and plasma treatment. The amorphous metal parameters were examined by means of several techniques: surface free energy (SFE) measurements by sessile drop method, X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), and both ex situ and in situ Raman spectroscopy. Additionally, influence of plasma parameters on wetting properties were optimized in systematic way with Design of Experiments (DOE) method. A wide range of used methods allow to fully investigate the amorphous metal material during preliminary preparation of surface. Obtained results provide information about appropriate parameters that should be applied in order to obtain highly reactive surface with functional oxide layer on it.

Recovery of Stishovite-Structure at Ambient Conditions out of Shock-Generated Amorphous Silica

NASA Astrophysics Data System (ADS)

Luo, S. N.; Tschauner, O.; Asimow, P. D.; Ahrens, T. J.

2006-12-01

We show that bulk amorphous silica recovered from shock wave experiments on quartz to 56 GPa is not a true glass but rather keeps a large degree of long range structural information that can be recovered by static cold recompression to 13 GPa. At this pressure shock-retrieved silica assumes the structure of crystalline stishovite. This amorphous-crystal transition is characterized by long coherence length, resulting in formation of large crystallites. Therefore, the shock-recovered amorphous material studied here is a slightly disordered six-fold coordinated silica phase but not a glass, which possesses only medium range order [1]. It is therefore most likely that stishovite or a structurally closely related solid phase represent the state this material had assumed during shock, while post-shock heating to 500 -1000 K [2-4] induces the observed slight disorder. This probable memory-effect allows for physically more precise characterization of diaplectic silica `glass' and may be extended to other diaplectic `glasses' [1] O.Tschauner, S.N. Luo, P.D.Asimow, T.J. Ahrens, Am. Min. in print (2006) [2] J. Wackerle, Journal of Applied Physics, 33, 922 - 937 (1962) [3] M.B. Boslough, Journal of Geophysical Research, 93, 6477 - 9484 (1988) [4] S.N. Luo, T.J. Ahrens, P.D. Asimow, Journal of Geophysical Research, 108, 2421- 2434 (2003) Supported under the NNSA Cooperative Agreement DE-FC88-01NV14049 and under NASA PGG Grant NNG04G107G and Contribution # 9144, Division of Geological and Planetary Sciences, California Institute of Technology.

A Tunable Molten-Salt Route for Scalable Synthesis of Ultrathin Amorphous Carbon Nanosheets as High-Performance Anode Materials for Lithium-Ion Batteries.

PubMed

Wang, Yixian; Tian, Wei; Wang, Luhai; Zhang, Haoran; Liu, Jialiang; Peng, Tingyue; Pan, Lei; Wang, Xiaobo; Wu, Mingbo

2018-02-14

Amorphous carbon is regarded as a promising alternative to commercial graphite as the lithium-ion battery anode due to its capability to reversibly store more lithium ions. However, the structural disorder with a large number of defects can lead to low electrical conductivity of the amorphous carbon, thus limiting its application for high power output. Herein, ultrathin amorphous carbon nanosheets were prepared from petroleum asphalt through tuning the carbonization temperature in a molten-salt medium. The amorphous nanostructure with expanded carbon interlayer spacing can provide substantial active sites for lithium storage, while the two-dimensional (2D) morphology can facilitate fast electrical conductivity. As a result, the electrodes deliver a high reversible capacity, outstanding rate capability, and superior cycling performance (579 and 396 mAh g -1 at 2 and 5 A g -1 after 900 cycles). Furthermore, full cells consisting of the carbon anodes coupled with LiMn 2 O 4 cathodes exhibit high specific capacity (608 mAh g -1 at 50 mA g -1 ) and impressive cycling stability with slow capacity loss (0.16% per cycle at 200 mA g -1 ). The present study not only paves the way for industrial-scale synthesis of advanced carbon materials for lithium-ion batteries but also deepens the fundamental understanding of the intrinsic mechanism of the molten-salt method.

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

LeBoeuf, J. L., E-mail: jerome.leboeuf@mail.mcgill.ca; Brodusch, N.; Gauvin, R.

2014-12-28

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30%more » single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.« less

Investigation of Local Ordering in Amorphous Materials.

NASA Astrophysics Data System (ADS)

Fan, Gary Guoyou

The intent of the research described in this dissertation, as indicated by the title, is to provide a better understanding of the structure of amorphous material. The possibility of using electron microscopy to study the amorphous structure is investigated. Chapter 1 gives a brief introduction to the understanding and modeling of the amorphous structure, electron microscopy and the image analysis in general. The difficulty of using 2-D images to infer 3-D structures information is illustrated in Chapter 2, where it is shown that some high resolution images are not qualitatively different from images of white -noises weak-phase objects or those of random atomic arrangements. The means of obtaining statistical information from these images is given in Chapters 3 and 5, where the quantitative differences between experimental images and simulated white-noise or simulated images corresponding to random arrangements are revealed. The use of image processing techniques in electron microscopy and the possible artifacts are presented in Chapter 4. The pattern recognition technique outlined in Chapter 6 demonstrates a feasible mode of scanning transition electron microscope operation. Statistical analysis can be effectively performed on a large number of nano-diffraction patterns from, for example, locally ordered samples. Some recent developments in physics as well as in electron microscopy are briefly reviewed, and their possible applications in the study of amorphous structures are discussed in Chapter 7.

First-principles study of the liquid and amorphous phases of In2Te3

NASA Astrophysics Data System (ADS)

Dragoni, D.; Gabardi, S.; Bernasconi, M.

2017-08-01

Structural, dynamical, and electronic properties of the liquid and amorphous phase of the In2Te3 compound have been studied by means of density functional molecular dynamics simulations. This system is of interest as a phase change material, undergoing a fast and reversible change between the crystalline and amorphous phases upon heating. It can be seen as a constituent of ternary InSbTe alloys which are receiving attention for application in electronic phase change memories. Amorphous models of In2Te3 300 -atom large have been generated by quenching from the melt by using different exchange and correlation functionals and different descriptions of the van der Waals interaction. It turns out the local bonding geometry of the amorphous phase is mostly tetrahedral with corner and edge sharing tetrahedra similar to those found in the crystalline phases of the InTe, In2Te3 , and In2Te5 compounds. Benchmark calculations on the crystalline α phase of In2Te3 in the defective zincblend geometry have also been performed. The calculations reveal that the high symmetric F 4 ¯3 m structure inferred experimentally from x-ray diffraction for the α phase must actually result from a random distribution of Te-Te bonds in different octahedral cages formed by the coalescence of vacancies in the In sublattice.

Morphological, structural, and chemical effects in response of novel carbide derived carbon sensor to NH3, N2O, and air.

PubMed

Adu, Kofi W; Li, Qixiu; Desai, Sharvil C; Sidorov, Anton N; Sumanasekera, Gamini U; Lueking, Angela D

2009-01-06

The response of two carbide derived carbons (CDCs) films to NH(3), N(2)O, and room air is investigated by four probe resistance at room temperature and pressures up to 760 Torr. The two CDC films were synthesized at 600 (CDC-600) and 1000 degrees C (CDC-1000) to vary the carbon morphology from completely amorphous to more ordered, and determine the role of structure, surface area, and porosity on sensor response. Sensor response time followed kinetic diameter and indicated a more ordered carbon structure slowed response due to increased tortuosity caused by the formation of graphitic layers at the particle fringe. Steady state sensor response was greater for the less-ordered material, despite its decreased surface area, decreased micropore volume, and less favorable surface chemistry, suggesting carbon structure is a stronger predictor of sensor response than surface chemistry. The lack of correlation between adsorption of the probe gases and sensor response suggests chemical interaction (charge transfer) drive sensor response within the material; N(2)O response, in particular, did not follow simple adsorption behavior. Based on Raman and FTIR characterization, carbon morphology (disorder) appeared to be the determining factor in overall sensor response, likely due to increased charge transfer between gases and carbon defects of amorphous or disordered regions. The response of the amorphous CDC-600 film to NH(3) was 45% without prior oxidation, showing amorphous CDCs have promise as chemical sensors without additional pretreatment common to other carbon sensors.

Size distributions of coastal ocean suspended particulate inorganic matter: Amorphous silica and clay minerals and their dynamics

NASA Astrophysics Data System (ADS)

Zhang, Xiaodong; Stavn, Robert H.; Falster, Alexander U.; Rick, Johannes J.; Gray, Deric; Gould, Richard W.

2017-04-01

Particulate inorganic matter (PIM) is a key component in estuarine and coastal systems and plays a critical role in trace metal cycling. Better understanding of coastal dynamics and biogeochemistry requires improved quantification of PIM in terms of its concentration, size distribution, and mineral species composition. The angular pattern of light scattering contains detailed information about the size and composition of particles. These volume scattering functions (VSFs) were measured in Mobile Bay, Alabama, USA, a dynamic, PIM dominated coastal environment. From measured VSFs, we determined through inversion the particle size distributions (PSDs) of major components of PIM, amorphous silica and clay minerals. An innovation here is the extension of our reported PSDs significantly into the submicron range. The PSDs of autochthonous amorphous silica exhibit two unique features: a peak centered at about 0.8 μm between 0.2 and 4 μm and a very broad shoulder essentially extending from 4 μm to >100 μm. With an active and steady particle source from blooming diatoms, the shapes of amorphous silica PSDs for sizes <10 μm varied little across the study area, but showed more particles of sizes >10 μm inside the bay, likely due to wind-induced resuspension of larger frustules that have settled. Compared to autochthonous amorphous silica, the allochthonous clay minerals are denser and exhibit relatively narrower PSDs with peaks located between 1 and 4 μm. Preferential settling of larger mineral particles as well as the smaller but denser illite component further narrowed the size distributions of clay minerals as they were being transported outside the bay. The derived PSDs also indicated a very dynamic situation in Mobile Bay when a cold weather front passed through during the experiment. With northerly winds of speeds up to 15 m s-1, both amorphous silica and clay minerals showed a dramatic increase in concentration and broadening in size distribution outside the exit of the barrier islands, indicative of wind-induced resuspension and subsequent advection of particles out of Mobile Bay. While collectively recognized as the PIM, amorphous silica and clay minerals, as shown in this study, possess very different size distributions. Considering how differences in PSDs and the associated particle areas will effect differences in sorption/desorption properties of these components, the results also demonstrate the potential of applying VSF-inversion in studying biogeochemistry in the estuarine-coastal ocean system.

New Optical Constants for Amorphous and Crystalline H2O-ice

NASA Technical Reports Server (NTRS)

Mastrapa, Rachel; Bernstein, Max; Sandford, Scott

2006-01-01

We have used the infrared spectra of laboratory ices to calculate the real and imaginary indices of refraction for amorphous and crystalline H2O-ice. We create H2O-ice samples in vacuum (approx. 10(exp ^-8)Torr). We measure the thickness of the sample by reflecting a He-Ne laser off of the sample and counting interference fringes as it grows and then collect transmission spectra of the samples in the wavelength range 1.25-22 micrometers. Using the ice thickness and transmission spectrum we calculate the imaginary part of the index of refraction. A Kramers-Kronig calculation is then used to calculate the real part of the index of refraction (Berland et al. 1994; Hudgins et al. 1993). These optical constants can be used to create model spectra for comparison to spectra from Solar System objects. We will summarize the differences between the amorphous and crystalline H2O-ice spectra. These include weakening of features and shifting of features to shorter wavelength in amorphous H,O-ice spectra. We will also discuss methods of using band area ratios to quickly estimate the fraction of amorphous to crystalline H2O-ice. We acknowledge financial support from the NASA Origins of the Solar System Program, the NASA Planetary Geology and Geophysics Program, and the NASA Postdoctoral Program.

Characterisation of crystalline-amorphous blends of sucrose with terahertz-pulsed spectroscopy: the development of a prediction technique for estimating the degree of crystallinity with partial least squares regression.

PubMed

Ermolina, I; Darkwah, J; Smith, G

2014-04-01

The control of the amorphous and crystalline states of drugs and excipients is important in many instances of product formulation, manufacture, and packaging, such as the formulation of certain (freeze-dried) fast melt tablets. This study examines the use of terahertz-pulsed spectroscopy (TPS) coupled with two different data analytical methods as an off-line tool (in the first instance) for assessing the degree of crystallinity in a binary mixture of amorphous and polycrystalline sucrose. The terahertz spectrum of sucrose was recorded in the wave number range between 3 and 100 cm(-1) for both the pure crystalline form and for a mixture of the crystalline and amorphous (freeze-dried) form. The THz spectra of crystalline sucrose showed distinct absorption bands at ∼48, ∼55, and ∼60 cm(-1) while all these features were absent in the amorphous sucrose. Calibration models were constructed based on (1) peak area analysis and (2) partial least square regression analysis, with the latter giving the best LOD and LOQ of 0.76% and 2.3%, respectively. The potential for using THz spectroscopy, as a quantitative in-line tool for percent crystallinity in a range of complex systems such as conventional tablets and freeze-dried formulations, is suggested in this study.

Enhanced pulmonary absorption of poorly soluble itraconazole by micronized cocrystal dry powder formulations.

PubMed

Karashima, Masatoshi; Sano, Noriyasu; Yamamoto, Syunsuke; Arai, Yuta; Yamamoto, Katsuhiko; Amano, Nobuyuki; Ikeda, Yukihiro

2017-06-01

Micronized cocrystal powders and amorphous spray-dried formulations were prepared and evaluated in vivo and in vitro as pulmonary absorption enhancement formulations of poorly soluble itraconazole (ITZ). ITZ cocrystals with succinic acid (SA) or l-tartaric acid (TA) with a particle size diameter of <2μm were successfully micronized using the jet-milling system. The cocrystal crystalline morphologies observed using scanning electron microscopy (SEM) suggested particle shapes that differed from those of the crystalline or spray-dried amorphous ITZ. The micronized ITZ cocrystal powders showed better intrinsic dissolution rate (IDR) and pulmonary absorption profile in rats than that of the amorphous spray-dried formulation and crystalline ITZ with comparable particle sizes. Specifically, in rat pharmacokinetic studies following pulmonary administration, micronized ITZ-SA and ITZ-TA cocrystals showed area under the curve from 0 to 8h (AUC 0-8h ) values approximately 24- and 19-fold higher than those of the crystalline ITZ and 2.0- and 1.6-fold higher than the spray-dried ITZ amorphous values, respectively. The amorphous formulation appeared physically instable during the studies due to rapid crystallization of ITZ, which was its disadvantage compared to the crystalline formulations. Therefore, this study demonstrated that micronized cocrystals are promising formulations for enhancing the pulmonary absorption of poorly soluble compounds. Copyright © 2017 Elsevier B.V. All rights reserved.

Spectroscopic investigation of the constituent components effect on the biodegradable package characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coţa, C.; Cioica, N., E-mail: cioica@inma.ro; Nagy, E. M.

The effect of the nature and the content of the plasticizers (water, glycerol) on the corn starch based biodegradable packages properties (crystalline-amorphous) and also on their degradation process after absorption of distilled water were investigated by {sup 1}H NMR relaxation and {sup 13}C CP/MAS NMR spectroscopies. For this goal, a set of 14 samples with various starch/glycerol/water (mass %) ratios were prepared and investigated after extrusion process in order to establish their crystalline or amorphous character. The composition having starch/glycerol/water 68/17/15 mass % ratio was found to have a dominant amorphous character and very similar features with a commercial specimenmore » (USA) used for the package. It was also found that this best package is extremely degraded after just one day under water absorption. The most resistant package was that with a large content of starch (78/19.5/2.5)« less

Spectroscopic investigation of the constituent components effect on the biodegradable package characteristics

NASA Astrophysics Data System (ADS)

Coťa, C.; Cioica, N.; Filip, C.; Fechete, R.; Todica, M.; Nagy, E. M.; Cozar, O.

2015-12-01

The effect of the nature and the content of the plasticizers (water, glycerol) on the corn starch based biodegradable packages properties (crystalline-amorphous) and also on their degradation process after absorption of distilled water were investigated by 1H NMR relaxation and 13C CP/MAS NMR spectroscopies. For this goal, a set of 14 samples with various starch/glycerol/water (mass %) ratios were prepared and investigated after extrusion process in order to establish their crystalline or amorphous character. The composition having starch/glycerol/water 68/17/15 mass % ratio was found to have a dominant amorphous character and very similar features with a commercial specimen (USA) used for the package. It was also found that this best package is extremely degraded after just one day under water absorption. The most resistant package was that with a large content of starch (78/19.5/2.5).

Mechanisms for pressure-induced crystal-crystal transition, amorphization, and devitrification of SnI{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H.; Tse, J. S., E-mail: john.tse@usask.ca; Hu, M. Y.

2015-10-28

The pressure-induced amorphization and subsequent recrystallization of SnI{sub 4} have been investigated using first principles molecular dynamics calculations together with high-pressure {sup 119}Sn nuclear resonant inelastic x-ray scattering measurements. Above ∼8 GPa, we observe a transformation from an ambient crystalline phase to an intermediate crystal structure and a subsequent recrystallization into a cubic phase at ∼64 GPa. The crystalline-to-amorphous transition was identified on the basis of elastic compatibility criteria. The measured tin vibrational density of states shows large amplitude librations of SnI{sub 4} under ambient conditions. Although high pressure structures of SnI{sub 4} were thought to be determined by randommore » packing of equal-sized spheres, we detected electron charge transfer in each phase. This charge transfer results in a crystal structure packing determined by larger than expected iodine atoms.« less

Mechanisms for pressure-induced crystal-crystal transition, amorphization, and devitrification of Snl 4

DOE PAGES

Liu, Hanyu; Tse, John S.; Hu, Michael Y.; ...

2015-10-27

The pressure-induced amorphization and subsequent recrystallization of SnI 4 have been investigated using first principles molecular dynamics calculations together with high-pressure 119Sn nuclear resonant inelastic x-ray scattering measurements. Above ~8 GPa, we observe a transformation from an ambient crystalline phase to an intermediate crystal structure and a subsequent recrystallization into a cubic phase at ~64 GPa. The crystalline-to-amorphous transition was identified on the basis of elastic compatibility criteria. The measured tin vibrational density of states shows large amplitude librations of SnI 4 under ambient conditions. Although high pressure structures of SnI 4 were thought to be determined by random packingmore » of equal-sized spheres, we detected electron charge transfer in each phase. As a result, this charge transfer results in a crystal structure packing determined by larger than expected iodine atoms. (C) 2015 AIP Publishing LLC.« less

Effect of particle size of drug on conversion of crystals to an amorphous state in a solid dispersion with crospovidone.

PubMed

Sugamura, Yuka; Fujii, Makiko; Nakanishi, Sayaka; Suzuki, Ayako; Shibata, Yusuke; Koizumi, Naoya; Watanabe, Yoshiteru

2011-01-01

The effect of particle size on amorphization of drugs in a solid dispersion (SD) was investigated for two drugs, indomethacin (IM) and nifedipine (NP). The SD of drugs were prepared in a mixture with crospovidone by a variety of mechanical methods, and their properties investigated by particle sizing, thermal analysis, and powder X-ray diffraction. IM, which had an initial particle size of 1 µm and tends to aggregate, was forced through a sieve to break up the particles. NP, which had a large initial particle size, was jet-milled. In both cases, reduction of the particle size of the drugs enabled transition to an amorphous state below the melting point of the drug. The reduction in particle size is considered to enable increased contact between the crospovidone and drug particles, increasing interactions between the two compounds. © 2011 Pharmaceutical Society of Japan

Superior Tensile Ductility in Bulk Metallic Glass with Gradient Amorphous Structure

PubMed Central

Wang, Q.; Yang, Y.; Jiang, H.; Liu, C. T.; Ruan, H. H.; Lu, J.

2014-01-01

Over centuries, structural glasses have been deemed as a strong yet inherently ‘brittle’ material due to their lack of tensile ductility. However, here we report bulk metallic glasses exhibiting both a high strength of ~2 GPa and an unprecedented tensile elongation of 2–4% at room temperature. Our experiments have demonstrated that intense structural evolution can be triggered in theses glasses by the carefully controlled surface mechanical attrition treatment, leading to the formation of gradient amorphous microstructures across the sample thickness. As a result, the engineered amorphous microstructures effectively promote multiple shear banding while delay cavitation in the bulk metallic glass, thus resulting in superior tensile ductility. The outcome of our research uncovers an unusual work-hardening mechanism in monolithic bulk metallic glasses and demonstrates a promising yet low-cost strategy suitable for producing large-sized, ultra-strong and stretchable structural glasses. PMID:24755683

Mechanisms for pressure-induced crystal-crystal transition, amorphization, and devitrification of SnI4.

PubMed

Liu, H; Tse, J S; Hu, M Y; Bi, W; Zhao, J; Alp, E E; Pasternak, M; Taylor, R D; Lashley, J C

2015-10-28

The pressure-induced amorphization and subsequent recrystallization of SnI4 have been investigated using first principles molecular dynamics calculations together with high-pressure (119)Sn nuclear resonant inelastic x-ray scattering measurements. Above ∼8 GPa, we observe a transformation from an ambient crystalline phase to an intermediate crystal structure and a subsequent recrystallization into a cubic phase at ∼64 GPa. The crystalline-to-amorphous transition was identified on the basis of elastic compatibility criteria. The measured tin vibrational density of states shows large amplitude librations of SnI4 under ambient conditions. Although high pressure structures of SnI4 were thought to be determined by random packing of equal-sized spheres, we detected electron charge transfer in each phase. This charge transfer results in a crystal structure packing determined by larger than expected iodine atoms.

Exploring the complex free-energy landscape of the simplest glass by rheology.

PubMed

Jin, Yuliang; Yoshino, Hajime

2017-04-11

For amorphous solids, it has been intensely debated whether the traditional view on solids, in terms of the ground state and harmonic low energy excitations on top of it, such as phonons, is still valid. Recent theoretical developments of amorphous solids revealed the possibility of unexpectedly complex free-energy landscapes where the simple harmonic picture breaks down. Here we demonstrate that standard rheological techniques can be used as powerful tools to examine nontrivial consequences of such complex free-energy landscapes. By extensive numerical simulations on a hard sphere glass under quasistatic shear at finite temperatures, we show that above the so-called Gardner transition density, the elasticity breaks down, the stress relaxation exhibits slow, and ageing dynamics and the apparent shear modulus becomes protocol-dependent. Being designed to be reproducible in laboratories, our approach may trigger explorations of the complex free-energy landscapes of a large variety of amorphous materials.

Exploring the complex free-energy landscape of the simplest glass by rheology

NASA Astrophysics Data System (ADS)

Jin, Yuliang; Yoshino, Hajime

2017-04-01

For amorphous solids, it has been intensely debated whether the traditional view on solids, in terms of the ground state and harmonic low energy excitations on top of it, such as phonons, is still valid. Recent theoretical developments of amorphous solids revealed the possibility of unexpectedly complex free-energy landscapes where the simple harmonic picture breaks down. Here we demonstrate that standard rheological techniques can be used as powerful tools to examine nontrivial consequences of such complex free-energy landscapes. By extensive numerical simulations on a hard sphere glass under quasistatic shear at finite temperatures, we show that above the so-called Gardner transition density, the elasticity breaks down, the stress relaxation exhibits slow, and ageing dynamics and the apparent shear modulus becomes protocol-dependent. Being designed to be reproducible in laboratories, our approach may trigger explorations of the complex free-energy landscapes of a large variety of amorphous materials.

Thin film memory matrix using amorphous and high resistive layers

NASA Technical Reports Server (NTRS)

Thakoor, Anilkumar P. (Inventor); Lambe, John (Inventor); Moopen, Alexander (Inventor)

1989-01-01

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

Ambient temperature NO oxidation over Cr-based amorphous mixed oxide catalysts: effects from the second oxide components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Aiyong; Lin, Bo; Zhang, Hanlei

2017-01-01

Three series of Cr-based mixed oxides (Cr-Co, Cr-Fe, and Cr-Ni oxides) with high specific surface areas and amorphous textures were synthesized using a novel sol-gel method. These mixed oxides, in comparison to their pure metal oxide (CrOx, Co3O4, FeOx and NiO) counterparts, display enhanced performance for catalytic oxidation of low-concentration NO at room temperature. The best performing catalysts achieve 100% NO conversion for ~30 h of operation at a high space velocity of 45,000 ml g-1 h-1. The amorphous structure was found to be critical for these catalysts to maintain high activity and durability. Control of Cr/M (M=Co, Fe andmore » Ni) molar ratio, nitrate precursor decomposition temperature and catalyst calcination temperature was key to the synthesis of these highly active catalysts.« less

Coaxial carbon plasma gun deposition of amorphous carbon films

NASA Technical Reports Server (NTRS)

Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

1984-01-01

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure

PubMed Central

Peng, Tao; Lv, Haifeng; He, Daping; Pan, Mu; Mu, Shichun

2013-01-01

A large-scale availability of the graphene is critical to the successful application of graphene-based electronic devices. The growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has opened a new promising route for large-scale high-quality graphene production. However, two key obstacles to epitaxial growth are extremely high requirements for almost perfectly ordered crystal SiC and harsh process conditions. Here, we report that the amorphous SiC (a-Si1−xCx) nano-shell (nano-film) can be directly transformed into graphene by using chlorination method under very mild reaction conditions of relative low temperature (800°C) and the ambient pressure in chlorine (Cl2) atmosphere. Therefore, our finding, the direct transformation of a-Si1−xCx into graphene under much milder condition, will open a door to apply this new method to the large-scale production of graphene at low costs. PMID:23359349

Water-assisted crystallization of mesoporous anatase TiO2 nanospheres

NASA Astrophysics Data System (ADS)

Li, Na; Zhang, Qiao; Joo, Ji Bong; Lu, Zhenda; Dahl, Michael; Gan, Yang; Yin, Yadong

2016-04-01

We report a facile water-assisted crystallization process for the conversion of amorphous sol-gel derived TiO2 into mesoporous anatase nanostructures with a high surface area and well-controlled porosity and crystallinity. As an alternative to conventional calcination methods, this approach works under very mild conditions and is therefore much desired for broad biological, environmental and catalytic applications.We report a facile water-assisted crystallization process for the conversion of amorphous sol-gel derived TiO2 into mesoporous anatase nanostructures with a high surface area and well-controlled porosity and crystallinity. As an alternative to conventional calcination methods, this approach works under very mild conditions and is therefore much desired for broad biological, environmental and catalytic applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01892k

Direct observation of small cluster mobility and ripening

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1976-01-01

Direct evidence is reported for the simultaneous occurrence of Ostwald ripening and short-distance cluster mobility during annealing of discontinuous metal films on clean amorphous substrates. The annealing characteristics of very thin particulate deposits of silver on amorphized clean surfaces of single-crystalline thin graphite substrates have been studied by in situ transmission electron microscopy (TEM) under controlled environmental conditions in the temperature range from 25 to 450 C. It was possible to monitor all stages of the experiments by TEM observation of the same specimen area. Slow Ostwald ripening was found to occur over the entire temperature range, but the overriding surface transport mechanism was short-distance cluster mobility. This was concluded from in situ observations of individual particles during annealing and from measurements of cluster size distributions, cluster number densities, area coverages, and mean cluster diameters.

Sonochemical Synthesis of Silver Nanoparticles Using Starch: A Comparison

PubMed Central

Smita, Kumari; Cumbal, Luis; Debut, Alexis; Pathak, Ravinandan Nath

2014-01-01

A novel approach was applied to synthesize silver nanoparticles using starch under sonication. Colloidal silver nanoparticles solution exhibited an increase of absorption from 420 to 440 nm with increase starch quantity. Transmission electron microscopy followed by selected area electron diffraction pattern analysis indicated the formation of spherical, polydispersed, amorphous, silver nanoparticles of diameter ranging from 23 to 97 nm with mean particle size of 45.6 nm. Selected area electron diffraction (SAED) confirmed partial crystalline and amorphous nature of silver nanoparticles. Silver nanoparticles synthesized in this manner can be used for synthesis of 2-aryl substituted benzimidazoles which have numerous biomedical applications. The optimized reaction conditions include 10 ml of 1 mM AgNO3, 25 mg starch, 11 pH range, and sonication for 20 min at room temperature. PMID:24587771

Oxygen defect induced photoluminescence of HfO2 thin films

NASA Astrophysics Data System (ADS)

Ni, Jie; Zhou, Qin; Li, Zhengcao; Zhang, Zhengjun

2008-07-01

Amorphous HfO2 films prepared by e-beam deposition exhibited room-temperature photoluminescence (PL) in the visible range, i.e., at ˜620 and 700nm, due to oxygen vacancies involved during deposition. This PL can be enhanced by two orders in intensity by crystallizing the amorphous films in flowing argon, where a large amount of oxygen vacancies were introduced, and can be diminished by removal of the oxygen vacancies by annealing HfO2 films in oxygen. This study could help understand the defect-property relationship and provides ways to tune the PL property of HfO2 films.

Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides.

PubMed

Wang, Ke-Yao; Foster, Amy C

2012-04-15

We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of -13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n(2)=7.43×10(-13) cm(2)/W, approximately an order of magnitude larger than that of single crystal silicon. © 2012 Optical Society of America

Development of bacterial biofilms in dairy processing lines.

PubMed

Austin, J W; Bergeron, G

1995-08-01

Adherence of bacteria to various milk contact sites was examined by scanning electron microscopy and transmission electron microscopy. New gaskets, endcaps, vacuum breaker plugs and pipeline inserts were installed in different areas in lines carrying either raw or pasteurized milk, and a routine schedule of cleaning-in-place and sanitizing was followed. Removed cleaned and sanitized gaskets were processed for scanning or transmission electron microscopy. Adherent bacteria were observed on the sides of gaskets removed from both pasteurized and raw milk lines. Some areas of Buna-n gaskets were colonized with a confluent layer of bacterial cells surrounded by an extensive amorphous matrix, while other areas of Buna-n gaskets showed a diffuse adherence over large areas of the surface. Most of the bacteria attached to polytetrafluoroethylene (PTFE or Teflon) gaskets were found in crevices created by insertion of the gasket into the pipeline. Examination of stainless steel endcaps, pipeline inserts, and PTFE vacuum breaker plugs did not reveal the presence of adherent bacteria. The results of this study indicate that biofilms developed on the sides of gaskets in spite of cleaning-in-place procedures. These biofilms may be a source of post-pasteurization contamination.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, James R., E-mail: James.Scheuermann@stonybrook.edu; Goldan, Amir H.; Zhao, Wei

Purpose: Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. Methods: The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layermore » (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. Results: An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. Conclusions: We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.« less

Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de; Lehmann, T.; Stiller, M.

We present a new method to obtain topological insulator Bi{sub 2}Se{sub 3} thin films with a centimeter large lateral length. To produce amorphous Bi{sub 2}Se{sub 3} thin films, we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi{sub 2}Se{sub 3} crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared tomore » the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≲ 50 K and fields B ≲ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.« less

Short-range correlations control the G/K and Poisson ratios of amorphous solids and metallic glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaccone, Alessio; Terentjev, Eugene M.

2014-01-21

The bulk modulus of many amorphous materials, such as metallic glasses, behaves nearly in agreement with the assumption of affine deformation, namely that the atoms are displaced just by the amount prescribed by the applied strain. In contrast, the shear modulus behaves as for nonaffine deformations, with additional displacements due to the structural disorder which induce a marked material softening to shear. The consequence is an anomalously large ratio of the bulk modulus to the shear modulus for disordered materials characterized by dense atomic packing, but not for random networks with point atoms. We explain this phenomenon with a microscopicmore » derivation of the elastic moduli of amorphous solids accounting for the interplay of nonaffinity and short-range particle correlations due to excluded volume. Short-range order is responsible for a reduction of the nonaffinity which is much stronger under compression, where the geometric coupling between nonaffinity and the deformation field is strong, whilst under shear this coupling is weak. Predictions of the Poisson ratio based on this model allow us to rationalize the trends as a function of coordination and atomic packing observed with many amorphous materials.« less

Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding.

PubMed

Zhu, Min; Cojocaru-Mirédin, Oana; Mio, Antonio M; Keutgen, Jens; Küpers, Michael; Yu, Yuan; Cho, Ju-Young; Dronskowski, Richard; Wuttig, Matthias

2018-05-01

Laser-assisted field evaporation is studied in a large number of compounds, including amorphous and crystalline phase change materials employing atom probe tomography. This study reveals significant differences in field evaporation between amorphous and crystalline phase change materials. High probabilities for multiple events with more than a single ion detected per laser pulse are only found for crystalline phase change materials. The specifics of this unusual field evaporation are unlike any other mechanism shown previously to lead to high probabilities of multiple events. On the contrary, amorphous phase change materials as well as other covalently bonded compounds and metals possess much lower probabilities for multiple events. Hence, laser-assisted field evaporation in amorphous and crystalline phase change materials reveals striking differences in bond rupture. This is indicative for pronounced differences in bonding. These findings imply that the bonding mechanism in crystalline phase change materials differs substantially from conventional bonding mechanisms such as metallic, ionic, and covalent bonding. Instead, the data reported here confirm a recently developed conjecture, namely that metavalent bonding is a novel bonding mechanism besides those mentioned previously. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anharmonicity Rise the Thermal Conductivity in Amorphous Silicon

NASA Astrophysics Data System (ADS)

Lv, Wei; Henry, Asegun

We recently proposed a new method called Direct Green-Kubo Modal Analysis (GKMA) method, which has been shown to calculate the thermal conductivity (TC) of several amorphous materials accurately. A-F method has been widely used for amorphous materials. However, researchers have found out that it failed on several different materials. The missing component of A-F method is the harmonic approximation and considering only the interactions of modes with similar frequencies, which neglect interactions of modes with large frequency difference. On the contrary, GKMA method, which is based on molecular dynamics, intrinsically includes all types of phonon interactions. In GKMA method, each mode's TC comes from both mode self-correlations (autocorrelations) and mode-mode correlations (crosscorrelations). We have demonstrated that the GKMA predicted TC of a-Si from Tersoff potential is in excellent agreement with one of experimental results. In this work, we will present the GKMA applications on a-Si using multiple potentials and gives us more insight of the effect of anharmonicity on the TC of amorphous silicon. This research was supported Intel grant AGMT DTD 1-15-13 and computational resources by NSF supported XSEDE resources under allocations DMR130105 and TG- PHY130049.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.

PubMed

Wang, L; Kirk, E; Wäckerlin, C; Schneider, C W; Hojeij, M; Gobrecht, J; Ekinci, Y

2014-06-13

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Low-temperature interface reactions in layered Au/Sb films: In situ investigation of the formation of an amorphous phase

NASA Astrophysics Data System (ADS)

Boyen, H.-G.; Cossy-Favre, A.; Oelhafen, P.; Siber, A.; Ziemann, P.; Lauinger, C.; Moser, T.; Häussler, P.; Baumann, F.

1995-01-01

Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages <= 6 ML chemical reactions at the Au/Sb interface occur, leading to the formation of a homogeneously intermixed amorphous layer with a maximum thickness of about 2.3 nm and Au concentrations as high as x~=80 at. %. This latter value corresponds to the limiting Au content where amorphous alloys can be prepared at low temperature (0 at. % <=x<= 80 at. %). For nominal coverages beyond 6 ML polycrystalline Au films were formed. Consequently, Au/Sb multilayers with sufficiently small modulation lengths, which were prepared at 130 K by ion-beam sputtering, were observed to grow as a homogeneous amorphous phase over a broad range of compositions, as evidenced by in situ resistance measurements and by comparing the obtained crystallization temperatures to those of vapor-quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts<= 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys.

Molecular Relaxations in Supercooled Liquid and Glassy States of Amorphous Quinidine: Dielectric Spectroscopy and Density Functional Theory Approaches.

PubMed

Schammé, Benjamin; Mignot, Mélanie; Couvrat, Nicolas; Tognetti, Vincent; Joubert, Laurent; Dupray, Valérie; Delbreilh, Laurent; Dargent, Eric; Coquerel, Gérard

2016-08-04

In this article, we conduct a comprehensive molecular relaxation study of amorphous Quinidine above and below the glass-transition temperature (Tg) through broadband dielectric relaxation spectroscopy (BDS) experiments and theoretical density functional theory (DFT) calculations, as one major issue with the amorphous state of pharmaceuticals is life expectancy. These techniques enabled us to determine what kind of molecular motions are responsible, or not, for the devitrification of Quinidine. Parameters describing the complex molecular dynamics of amorphous Quinidine, such as Tg, the width of the α relaxation (βKWW), the temperature dependence of α-relaxation times (τα), the fragility index (m), and the apparent activation energy of secondary γ relaxation (Ea-γ), were characterized. Above Tg (> 60 °C), a medium degree of nonexponentiality (βKWW = 0.5) was evidenced. An intermediate value of the fragility index (m = 86) enabled us to consider Quinidine as a glass former of medium fragility. Below Tg (< 60 °C), one well-defined secondary γ relaxation, with an apparent activation energy of Ea-γ = 53.8 kJ/mol, was reported. From theoretical DFT calculations, we identified the most reactive part of Quinidine moieties through exploration of the potential energy surface. We evidenced that the clearly visible γ process has an intramolecular origin coming from the rotation of the CH(OH)C9H14N end group. An excess wing observed in amorphous Quinidine was found to be an unresolved Johari-Goldstein relaxation. These studies were supplemented by sub-Tg experimental evaluations of the life expectancy of amorphous Quinidine by X-ray powder diffraction and differential scanning calorimetry. We show that the difference between Tg and the onset temperature for crystallization, Tc, which is 30 K, is sufficiently large to avoid recrystallization of amorphous Quinidine during 16 months of storage under ambient conditions.

The Phagocytosis and Toxicity of Amorphous Silica

PubMed Central

Costantini, Lindsey M.; Gilberti, Renée M.; Knecht, David A.

2011-01-01

Background Inhalation of crystalline silica is known to cause an inflammatory reaction and chronic exposure leads to lung fibrosis and can progress into the disease, silicosis. Cultured macrophages bind crystalline silica particles, phagocytose them, and rapidly undergo apoptotic and necrotic death. The mechanism by which particles are bound and internalized and the reason particles are toxic is unclear. Amorphous silica has been considered to be a less toxic form, but this view is controversial. We compared the uptake and toxicity of amorphous silica to crystalline silica. Methodology/Principal Findings Amorphous silica particles are phagocytosed by macrophage cells and a single internalized particle is capable of killing a cell. Fluorescent dextran is released from endo-lysosomes within two hours after silica treatment and Caspase-3 activation occurs within 4 hours. Interestingly, toxicity is specific to macrophage cell lines. Other cell types are resistant to silica particle toxicity even though they internalize the particles. The large and uniform size of the spherical, amorphous silica particles allowed us to monitor them during the uptake process. In mCherry-actin transfected macrophages, actin rings began to form 1-3 minutes after silica binding and the actin coat disassembled rapidly following particle internalization. Pre-loading cells with fluorescent dextran allowed us to visualize the fusion of phagosomes with endosomes during internalization. These markers provided two new ways to visualize and quantify particle internalization. At 37°C the rate of amorphous silica internalization was very rapid regardless of particle coating. However, at room temperature, opsonized silica is internalized much faster than non-opsonized silica. Conclusions/Significance Our results indicate that amorphous and crystalline silica are both phagocytosed and both toxic to mouse alveolar macrophage (MH-S) cells. The pathway leading to apoptosis appears to be similar in both cases. However, the result suggests a mechanistic difference between FcγRIIA receptor-mediated and non-opsonized silica particle phagocytosis. PMID:21311600

The phagocytosis and toxicity of amorphous silica.

PubMed

Costantini, Lindsey M; Gilberti, Renée M; Knecht, David A

2011-02-02

Inhalation of crystalline silica is known to cause an inflammatory reaction and chronic exposure leads to lung fibrosis and can progress into the disease, silicosis. Cultured macrophages bind crystalline silica particles, phagocytose them, and rapidly undergo apoptotic and necrotic death. The mechanism by which particles are bound and internalized and the reason particles are toxic is unclear. Amorphous silica has been considered to be a less toxic form, but this view is controversial. We compared the uptake and toxicity of amorphous silica to crystalline silica. Amorphous silica particles are phagocytosed by macrophage cells and a single internalized particle is capable of killing a cell. Fluorescent dextran is released from endo-lysosomes within two hours after silica treatment and Caspase-3 activation occurs within 4 hours. Interestingly, toxicity is specific to macrophage cell lines. Other cell types are resistant to silica particle toxicity even though they internalize the particles. The large and uniform size of the spherical, amorphous silica particles allowed us to monitor them during the uptake process. In mCherry-actin transfected macrophages, actin rings began to form 1-3 minutes after silica binding and the actin coat disassembled rapidly following particle internalization. Pre-loading cells with fluorescent dextran allowed us to visualize the fusion of phagosomes with endosomes during internalization. These markers provided two new ways to visualize and quantify particle internalization. At 37 °C the rate of amorphous silica internalization was very rapid regardless of particle coating. However, at room temperature, opsonized silica is internalized much faster than non-opsonized silica. Our results indicate that amorphous and crystalline silica are both phagocytosed and both toxic to mouse alveolar macrophage (MH-S) cells. The pathway leading to apoptosis appears to be similar in both cases. However, the result suggests a mechanistic difference between FcγRIIA receptor-mediated and non-opsonized silica particle phagocytosis.

Electrochemically synthesized amorphous and crystalline nanowires: dissimilar nanomechanical behavior in comparison with homologous flat films

NASA Astrophysics Data System (ADS)

Zeeshan, M. A.; Esqué-de Los Ojos, D.; Castro-Hartmann, P.; Guerrero, M.; Nogués, J.; Suriñach, S.; Baró, M. D.; Nelson, B. J.; Pané, S.; Pellicer, E.; Sort, J.

2016-01-01

The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices.The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices. Electronic supplementary information (ESI) available: Additional details on experimental and analysis methods, additional results on crystalline CoNi(Re)P alloys and two movies to illustrate the stress distribution during deformation of the amorphous and crystalline nanowires. See DOI: 10.1039/c5nr04398k

Formulation and process design for a solid dosage form containing a spray-dried amorphous dispersion of ibipinabant.

PubMed

Leane, Michael M; Sinclair, Wayne; Qian, Feng; Haddadin, Raja; Brown, Alan; Tobyn, Mike; Dennis, Andrew B

2013-01-01

Amorphous forms of poorly soluble drugs are more frequently being incorporated into solid dispersions for administration and extensive research has led to a reasonable understanding of how these dispersions, although still kinetically unstable, improve stability relative to the pure amorphous form. There remains however a paucity of literature describing the effects on such solid dispersions of subsequent processing into solid dosage forms such as tablets. This paper addresses this area by looking at the effects of the addition of common excipients and different manufacturing routes on the stability of a spray-dried dispersion (SDD) of the cannabinoid CB-1 antagonist, ibipinabant. A marked difference in physical stability of tablets was seen with the different fillers with microcrystalline cellulose (MCC) giving the best stability profile. It was found that minimising the number of compression steps led to improved formulation stability with a direct compression process giving the best results. Increased levels of crystallinity were seen in coated tablets most likely due to the exposure of the amorphous matrix to moisture and heat during the coating process. DSIMS analysis of the SDD particles indicated increased levels of polymer on the surface.

Evolution of supersaturation of amorphous pharmaceuticals: the effect of rate of supersaturation generation.

PubMed

Sun, Dajun D; Lee, Ping I

2013-11-04

The combination of a rapidly dissolving and supersaturating "spring" with a precipitation retarding "parachute" has often been pursued as an effective formulation strategy for amorphous solid dispersions (ASDs) to enhance the rate and extent of oral absorption. However, the interplay between these two rate processes in achieving and maintaining supersaturation remains inadequately understood, and the effect of rate of supersaturation buildup on the overall time evolution of supersaturation during the dissolution of amorphous solids has not been explored. The objective of this study is to investigate the effect of supersaturation generation rate on the resulting kinetic solubility profiles of amorphous pharmaceuticals and to delineate the evolution of supersaturation from a mechanistic viewpoint. Experimental concentration-time curves under varying rates of supersaturation generation and recrystallization for model drugs, indomethacin (IND), naproxen (NAP) and piroxicam (PIR), were generated from infusing dissolved drug (e.g., in ethanol) into the dissolution medium and compared with that predicted from a comprehensive mechanistic model based on the classical nucleation theory taking into account both the particle growth and ripening processes. In the absence of any dissolved polymer to inhibit drug precipitation, both our experimental and predicted results show that the maximum achievable supersaturation (i.e., kinetic solubility) of the amorphous solids increases, the time to reach maximum decreases, and the rate of concentration decline in the de-supersaturation phase increases, with increasing rate of supersaturation generation (i.e., dissolution rate). Our mechanistic model also predicts the existence of an optimal supersaturation rate which maximizes the area under the curve (AUC) of the kinetic solubility concentration-time profile, which agrees well with experimental data. In the presence of a dissolved polymer from ASD dissolution, these observed trends also hold true except the de-supersaturation phase is more extended due to the crystallization inhibition effect. Since the observed kinetic solubility of nonequilibrium amorphous solids depends on the rate of supersaturation generation, our results also highlight the underlying difficulty in determining a reproducible solubility advantage for amorphous solids.

Highly flexible electronics from scalable vertical thin film transistors.

PubMed

Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

2014-03-12

Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE PAGES

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin; ...

2017-07-24

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

Effects of Helium Ion Irradiation on Properties of Crystalline and Amorphous Multiphase Ceramic Coatings

NASA Astrophysics Data System (ADS)

Chen, Yong; Hu, Liangbin; Qiu, Changjun; He, Bin; Wang, Zhongchang

2017-08-01

The Al2O3-TiO2 crystalline and amorphous multiphase ceramic coatings were prepared on a martensitic steel by laser in situ reaction technique and impose irradiation with 200 keV He ions at different doses. The helium ion irradiation goes 1.55 μm deep from the surface of coating, and the displacement per atom (dpa) for the Al2O3-TiO2 coating is 20.0. When the irradiation fluency is 5 × 1017 ions/cm2, defects are identified in crystalline areas and there form interfacial areas in the coating. These crystal defects tend to migrate and converge at the interfaces. Moreover, helium ion irradiation is found to exert no effect on surface chemical composition and phase constitution of the coatings, while surface mechanical properties for the coatings after irradiation differ from those before irradiation. Further nano-indentation experiments reveal that surface nano-hardness of the Al2O3-TiO2 multiphase coatings decreases as the helium ions irradiation flux increases. Such Al2O3-TiO2 crystalline and amorphous multiphase ceramic coatings exhibit the strongest resistance against helium ion irradiation which shall be applied as candidate structural materials for accelerator-driven sub-critical system to handle the nuclear waste under extreme conditions.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

NASA Astrophysics Data System (ADS)

Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar Sawa, L.; De Echave, T.; Lanfant, B.; Leconte, Y.

2018-05-01

Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.1015 and 1.1017 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 1017 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films

NASA Astrophysics Data System (ADS)

Hellerstedt, Jack; Yudhistira, Indra; Edmonds, Mark T.; Liu, Chang; Collins, James; Adam, Shaffique; Fuhrer, Michael S.

2017-10-01

Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000 cm2/V s and carrier densities below 3 ×1018cm-3 , comparable to the best thin-film Na3Bi . An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

Synthesis and characterization of a nanocrystalline diamond aerogel

PubMed Central

Pauzauskie, Peter J.; Crowhurst, Jonathan C.; Worsley, Marcus A.; Laurence, Ted A.; Kilcoyne, A. L. David; Wang, Yinmin; Willey, Trevor M.; Visbeck, Kenneth S.; Fakra, Sirine C.; Evans, William J.; Zaug, Joseph M.; Satcher, Joe H.

2011-01-01

Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel’s void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel. PMID:21555550

Synthesis and characterization of a nanocrystalline diamond aerogel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pauzauskie, Peter J.; Crowhurst, Jonathan C.; Worsley, Marcus A.

2011-07-06

Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material revealmore » the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.« less

Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

NASA Astrophysics Data System (ADS)

Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

2018-02-01

Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced foreign body response. The technique is promising and has potential for clinical translation and large scale manufacturing.

High Strain Rate and Shock-Induced Deformation in Metals

NASA Astrophysics Data System (ADS)

Ravelo, Ramon

2012-02-01

Large-scale non-equilibrium molecular Dynamics (MD) simulations are now commonly used to study material deformation at high strain rates (10^9-10^12 s-1). They can provide detailed information-- such as defect morphology, dislocation densities, and temperature and stress profiles, unavailable or hard to measure experimentally. Computational studies of shock-induced plasticity and melting in fcc and bcc single, mono-crystal metals, exhibit generic characteristics: high elastic limits, large directional anisotropies in the yield stress and pre-melting much below the equilibrium melt temperature for shock wave propagation along specific crystallographic directions. These generic features in the response of single crystals subjected to high strain rates of deformation can be explained from the changes in the energy landscape of the uniaxially compressed crystal lattice. For time scales relevant to dynamic shock loading, the directional-dependence of the yield strength in single crystals is shown to be due to the onset of instabilities in elastic-wave propagation velocities. The elastic-plastic transition threshold can accurately be predicted by a wave-propagation stability analysis. These strain-induced instabilities create incipient defect structures, which can be quite different from the ones, which characterize the long-time, asymptotic state of the compressed solid. With increase compression and strain rate, plastic deformation via extended defects gives way to amorphization associated with the loss in shear rigidity along specific deformation paths. The hot amorphous or (super-cooled liquid) metal re-crystallizes at rates, which depend on the temperature difference between the amorphous solid and the equilibrium melt line. This plastic-amorphous transition threshold can be computed from shear-waves stability analyses. Examples from selected fcc and bcc metals will be presented employing semi-empirical potentials of the embedded atom method (EAM) type as well as results from density functional theory calculations.

A model calculation of coherence effects in the elastic backscattering of very low energy electrons (1-20 eV) from amorphous ice.

PubMed

Liljequist, David

2012-01-01

Backscattering of very low energy electrons in thin layers of amorphous ice is known to provide experimental data for the elastic and inelastic cross sections and indicates values to be expected in liquid water. The extraction of cross sections was based on a transport analysis consistent with Monte Carlo simulation of electron trajectories. However, at electron energies below 20 eV, quantum coherence effects may be important and trajectory-based methods may be in significant error. This possibility is here investigated by calculating quantum multiple elastic scattering of electrons in a simple model of a very small, thin foil of amorphous ice. The average quantum multiple elastic scattering of electrons is calculated for a large number of simulated foils, using a point-scatterer model for the water molecule and taking inelastic absorption into account. The calculation is compared with a corresponding trajectory simulation. The difference between average quantum scattering and trajectory simulation at energies below about 20 eV is large, in particular in the forward scattering direction, and is found to be almost entirely due to coherence effects associated with the short-range order in the amorphous ice. For electrons backscattered at the experimental detection angle (45° relative to the surface normal) the difference is however small except at electron energies below about 10 eV. Although coherence effects are in general found to be strong, the mean free path values derived by trajectory-based analysis may actually be in fair agreement with the result of an analysis based on quantum scattering, at least for electron energies larger than about 10 eV.

Nature and origin of interstellar diamond from the Allende CV3 meteorite

NASA Technical Reports Server (NTRS)

Blake, David; Freund, Friedemann; Bunch, Ted; Krishnan, Kannan; Stampfer, Mitch; Chang, Sherwood; Tielens, Alexander G. G. M.

1990-01-01

Data and experimental evidence which support the contention that the C delta diamonds may result from grain-grain collisions in supernova shocks in the interstellar medium are presented. Fragments of the Allende CV3 chondrite were acid-treated. A whitish powder was obtained. For the Analytical Electron Microscopy (AEM) a small drop of ethanol suspension was transferred onto holey carbon support films on 3 mm EM grids. The AEM was performed on transmission-thin fragments of the material which overlay holes in the film, to eliminate interference from the substrate. Electron Spectroscopy for Chemical Analysis (ESCA) was performed on a large aliquot of C. Diamond was identified by selected area electron diffraction. Scanning Transmission Electron Microscope / Energy Dispersive X-ray (STEM-EDS) microanalyses of the C delta diamond, using a light-element detector, show that oxygen and possibly nitrogen are the only impurities consistently present. ESCA spectra from bulk C delta material confirm the presence of N at a level of 0.35 percent or less. Under UV irradiation a yellow-red fluorescence is observed, consistent with that of natural diamonds containing substitutional N. Electron Energy Loss Spectra (EELS) were recorded at 2 eV resolution from the C delta diamond, high pressure synthetic diamond, a diamond film produced in a low pressure plasma by chemical vapor deposition (CVD) on a heated silicon substrate (Roy, 1987), graphite, and amorphous arc sputtered carbon. Comparison of the carbon K edge shape and fine structure shows the Allende C delta phase to be largely diamond, but with a significant pre-edge absorption feature indicative of transitions of C 1s electrons into pi asterisk orbitals which are absent in the purely sp(3)-bonded diamond but present in graphite and amorphous carbon.

Importance of the Direct Contact of Amorphous Solid Particles with the Surface of Monolayers for the Transepithelial Permeation of Curcumin.

PubMed

Kimura, Shunsuke; Kasatani, Sachiha; Tanaka, Megumi; Araki, Kaeko; Enomura, Masakazu; Moriyama, Kei; Inoue, Daisuke; Furubayashi, Tomoyuki; Tanaka, Akiko; Kusamori, Kosuke; Katsumi, Hidemasa; Sakane, Toshiyasu; Yamamoto, Akira

2016-02-01

The amorphization has been generally known to improve the absorption and permeation of poorly water-soluble drugs through the enhancement of the solubility. The present study focused on the direct contact of amorphous solid particles with the surface of the membrane using curcumin as a model for water-insoluble drugs. Amorphous nanoparticles of curcumin (ANC) were prepared with antisolvent crystallization method using a microreactor. The solubility of curcumin from ANC was two orders of magnitude higher than that of crystalline curcumin (CC). However, the permeation of curcumin from the saturated solution of ANC was negligible. The transepithelial permeation of curcumin from ANC suspension was significantly increased as compared to CC suspension, while the permeation was unlikely correlated with the solubility, and the increase in the permeation was dependent on the total concentration of curcumin in ANC suspension. The absorptive transport of curcumin (from apical to basal, A to B) from ANC suspension was much higher than the secretory transport (from basal to apical, B to A). In vitro transport of curcumin through air-interface monolayers is large from ANC but negligible from CC particles. These findings suggest that the direct contact of ANC with the absorptive membrane can play an important role in the transport of curcumin from ANC suspension. The results of the study suggest that amorphous particles may be directly involved in the transepithlial permeation of curcumin.

Amorphous Transition Metal Sulfides Anchored on Amorphous Carbon-Coated Multiwalled Carbon Nanotubes for Enhanced Lithium-Ion Storage.

PubMed

Jin, Rencheng; Zhai, Qinghe; Wang, Qingyao

2017-10-09

Cobalt sulfide and molybdenum sulfide, with high theoretical capacities, have been considered as one of most promising anode materials for lithium-ion batteries (LIBs). However, the poor cyclability and low rate performances originating from the large volume expansion and poor electrical conductivity extremely inhibit their practical application. Here, the electrochemical performances are effectively improved by growing amorphous cobalt sulfide and molybdenum sulfide onto amorphous carbon-coated multiwalled carbon nanotubes (CNTs@C@CoS 2 and CNTs@C@MoS 2 ). The CNTs@C@CoS 2 presents a high reversible specific capacity of 1252 mAh g -1 at 0.2 Ag -1 , excellent rate performance of 672 mAh g -1 (5 Ag -1 ), and enhanced cycle life of 598 mAh g -1 after 500 cycles at 2 Ag -1 . For CNTs@C@MoS 2 , it exhibits a specific capacity of 1395 mAh g -1 , superior rate performance of 727 mAh g -1 at 5 Ag -1 , and long cycle stability (796 mAh g -1 after 500 cycles at 2 Ag -1 ). The enhanced electrochemical properties of the electrodes are probably ascribed to their amorphous nature, the combination of CNTs@C that adhered and hindered the agglomeration of CoS 2 and MoS 2 as well as the enhanced electronic conductivity. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of Li atom diffusion in amorphous Li3PO4 with neural network potential

NASA Astrophysics Data System (ADS)

Li, Wenwen; Ando, Yasunobu; Minamitani, Emi; Watanabe, Satoshi

2017-12-01

To clarify atomic diffusion in amorphous materials, which is important in novel information and energy devices, theoretical methods having both reliability and computational speed are eagerly anticipated. In the present study, we applied neural network (NN) potentials, a recently developed machine learning technique, to the study of atom diffusion in amorphous materials, using Li3PO4 as a benchmark material. The NN potential was used together with the nudged elastic band, kinetic Monte Carlo, and molecular dynamics methods to characterize Li vacancy diffusion behavior in the amorphous Li3PO4 model. By comparing these results with corresponding DFT calculations, we found that the average error of the NN potential is 0.048 eV in calculating energy barriers of diffusion paths, and 0.041 eV in diffusion activation energy. Moreover, the diffusion coefficients obtained from molecular dynamics are always consistent with those from ab initio molecular dynamics simulation, while the computation speed of the NN potential is 3-4 orders of magnitude faster than DFT. Lastly, the structure of amorphous Li3PO4 and the ion transport properties in it were studied with the NN potential using a large supercell model containing more than 1000 atoms. The formation of P2O7 units was observed, which is consistent with the experimental characterization. The Li diffusion activation energy was estimated to be 0.55 eV, which agrees well with the experimental measurements.

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

NASA Technical Reports Server (NTRS)

Hanak, Joseph J.; Kaschmitter, Jim

1991-01-01

Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

Transfer and transformation of soil iron and implications for hydrogeomorpholocial changes in Naoli River catchment, sanjiang plain, Northeast China

USGS Publications Warehouse

Ming, J.; Xianguo, L.; Hongqing, W.; Yuanchun, Z.; Haitao, W.

2011-01-01

Wetland soils are characterized by alternating redox process due to the fluctuation of waterlogged conditions. Iron is an important redox substance, and its transfer and transformation in the wetland ecosystem could be an effective indicator for the environment changes. In this paper, we selected the Naoli River catchment in the Sanjiang Plain, Northeast China as the study area to analyze the dynamics of transfer and transformation of soil iron, and the relationship between iron content change and environmental factors. The results show that the total and crystalline iron contents reach the peak in the depth of 60 cm in soil profile, while the amorphous iron content is higher in the topsoil. In the upper reaches, from the low to high landscape positions, the total and crystalline iron contents decrease from 62.98 g/kg to 41.61 g/kg, 22.82 g/kg to 10.53 g/kg respectively, while the amorphous iron content increases from 2.42 g/kg to 8.88 g/kg. Amorphous iron content has positive correlation with organic matter and soil water contents, while negative correlation with pH. Moreover, both the crystalline and amorphous iron contents present no correlation with total iron content, indicating that environmental factors play a more important role in the transfer and transformation of iron other than the content of the total iron. Different redoximorphic features were found along the soil profile due to the transfer and transformation of iron. E and B horizons of wetland soil in the study area have a matrix Chroma 2 or less, and all the soil types can meet the criteria of American hydric soil indicators except albic soil. ?? Science Press, Science Press, Northeast Institute of Geography and Agroecology, CAS and Springer-Verlag Berlin Heidelberg 2011.

Effect of nanodiamond fluorination on the efficiency of quasispecular reflection of cold neutrons

NASA Astrophysics Data System (ADS)

Nesvizhevsky, V. V.; Dubois, M.; Gutfreund, Ph.; Lychagin, E. V.; Nezvanov, A. Yu.; Zhernenkov, K. N.

2018-02-01

Nanomaterials, which show large reflectivity for external radiation, are of general interest in science and technology. We report a result from our ongoing research on the reflection of low-energy neutrons from powders of detonation diamond nanoparticles. Our previous work showed a large probability for quasispecular reflection of neutrons from this medium. The model of neutron scattering from nanoparticles, which we have developed, suggests two ways to increase the quasispecular reflection probability: (1) the reduction of incoherent scattering by substitution of hydrogen with fluorine inside the nanoparticles, and (2) the sharpening of the neutron optical potential step by removal of amorphous s p2 carbon from the nanoparticle shells. We present experimental results on scattering of slow neutrons from both raw and fluorinated diamond nanoparticles with amorphous s p2 carbon removed by gas-solid fluorination. These results show a clear increase in quasispecular reflection probability.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

PubMed

Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

2016-04-01

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

NASA Astrophysics Data System (ADS)

Monmeyran, Corentin; Crowe, Iain F.; Gwilliam, Russell M.; Heidelberger, Christopher; Napolitani, Enrico; Pastor, David; Gandhi, Hemi H.; Mazur, Eric; Michel, Jürgen; Agarwal, Anuradha M.; Kimerling, Lionel C.

2018-04-01

Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.

Bending effects and temperature dependence of magnetic properties in a Fe-rich amorphous wire

NASA Astrophysics Data System (ADS)

Bordin, G.; Buttino, G.; Poppi, M.

2001-08-01

Amorphous wires with composition Fe 77.5Si 7.5B 15 exhibit a very peculiar magnetization process characterized by a single and quite large Barkhausen jump. This gives rise to a squared hysteresis loop at a critical magnetic field. The bistable behaviour, widely studied in wires with typical length of 10 cm and diameter of 125 μm, appears above a length of about 7 cm in straight wires and disappears for curvature radius within the range 2-12 cm in bent wires. In this work it is shown that bistability occurs in bent wires, whatever their curvature is, provided the wires are long enough. To this purpose spiral-shaped samples with several turns are considered. However, when the wire length is not a integer number of turns the magnetization reverses through many large Barkhausen jumps. In this condition, varying the measuring temperature can activate the energy barriers for the jumps.

Implanted neural network potentials: Application to Li-Si alloys

NASA Astrophysics Data System (ADS)

Onat, Berk; Cubuk, Ekin D.; Malone, Brad D.; Kaxiras, Efthimios

2018-03-01

Modeling the behavior of materials composed of elements with different bonding and electronic structure character for large spatial and temporal scales and over a large compositional range is a challenging problem. Cases in point are amorphous alloys of Si, a prototypical covalent material, and Li, a prototypical metal, which are being considered as anodes for high-energy-density batteries. To address this challenge, we develop a methodology based on neural networks that extends the conventional training approach to incorporate pre-trained parts that capture the character of different components, into the overall network; we refer to this model as the "implanted neural network" method. We show that this approach works well for the Si-Li amorphous alloys for a wide range of compositions, giving good results for key quantities like the diffusion coefficients. The method is readily generalizable to more complicated situations that involve two or more different elements.

Large Scale Synthesis and Light Emitting Fibers of Tailor-Made Graphene Quantum Dots

PubMed Central

Park, Hun; Hyun Noh, Sung; Hye Lee, Ji; Jun Lee, Won; Yun Jaung, Jae; Geol Lee, Seung; Hee Han, Tae

2015-01-01

Graphene oxide (GO), which is an oxidized form of graphene, has a mixed structure consisting of graphitic crystallites of sp2 hybridized carbon and amorphous regions. In this work, we present a straightforward route for preparing graphene-based quantum dots (GQDs) by extraction of the crystallites from the amorphous matrix of the GO sheets. GQDs with controlled functionality are readily prepared by varying the reaction temperature, which results in precise tunability of their optical properties. Here, it was concluded that the tunable optical properties of GQDs are a result of the different fraction of chemical functionalities present. The synthesis approach presented in this paper provides an efficient strategy for achieving large-scale production and long-time optical stability of the GQDs, and the hybrid assembly of GQD and polymer has potential applications as photoluminescent fibers or films. PMID:26383257

Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hameed A. Naseem, Husam H. Abu-Safe

2007-02-09

The purpose of this project was to investigate metal-induced crystallization of amorphous silicon at low temperatures using excitation sources such as laser and rapid thermal annealing, as well as, electric field. Deposition of high quality crystalline silicon at low temperatures allows the use of low cost soda-lime glass and polymeric films for economically viable photovoltaic solar cells and low cost large area flat panel displays. In light of current and expected demands on Si supply due to expanding use of consumer electronic products throughout the world and the incessant demand for electric power the need for developing high grade Simore » thin films on low cost substrate becomes even more important. We used hydrogenated and un-hydrogenated amorphous silicon deposited by plasma enhanced chemical vapor deposition and sputtering techniques (both of which are extensively used in electronic and solar cell industries) to fabricate nano-crystalline, poly-crystalline (small as well as large grain), and single-crystalline (epitaxial) films at low temperatures. We demonstrated Si nanowires on flat surfaces that can be used for fabricating nanometer scale transistors. We also demonstrated lateral crystallization using Al with and without an applied electric field. These results are critical for high mobility thin film transistors (TFT) for large area display applications. Large grain silicon (~30-50 µm grain size for < 0.5 µm thick films) was demonstrated on glass substrates at low temperatures. We also demonstrated epitaxial growth of silicon on (100) Si substrates at temperatures as low as 450°C. Thin film Si solar cells are being projected as the material of choice for low cost high efficiency solar cells when properly coupled with excellent light-trapping schemes. Ar ion laser (CW) was shown to produce dendritic nanowire structures at low power whereas at higher powers yielded continuous polycrystalline films. The power density required for films in contact with Al was demonstrated to be at least two orders of magnitude lower that that reported in the literature before. Polysilicon was successfully achieved on polyimide (Kapton©) films. Thin film Si solar cells on lightweight stoable polymer offer great advantage for terrestrial and space power applications. In summary we have demonstrated through this research the viability of producing low cost nano-, poly-, and epitaxial Si material on substrates of choice for applications in economically viable environmentally friendly sustainable solar power systems. This truly enabling technology has widespread applications in multibillion dollar electronic industry and consumer products.« less

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

NASA Astrophysics Data System (ADS)

Ayala, Christopher L.; Grogg, Daniel; Bazigos, Antonios; Bleiker, Simon J.; Fernandez-Bolaños, Montserrat; Niklaus, Frank; Hagleitner, Christoph

2015-11-01

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring oscillator built using cell-level digital logic elements based on curved NEM switches. The ring oscillator core occupies an area of 30 μm × 10 μm using 6 NEM switches. Each NEM switch device has a footprint of 5 μm × 3 μm, an air gap of 60 μm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz, and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator are key milestones on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.

Preparation of hollow mesoporous carbon spheres and their performances for electrochemical applications

NASA Astrophysics Data System (ADS)

Ariyanto, T.; Zhang, G. R.; Kern, A.; Etzold, B. J. M.

2018-03-01

Hollow carbon materials have received intensive attention for energy storage/conversion applications due to their attractive properties of high conductivity, high surface area, large void and short diffusion pathway. In this work, a novel hollow mesoporous material based on carbide-derived carbon (CDC) is presented. CDC is a new class of carbon material synthesized by the selective extraction of metals from metal carbides. With a two-stage extraction procedure of carbides with chlorine, firstly hybrid core-shell carbon particles were synthesized, i.e. mesoporous/graphitic carbon shells covering microporous/amorphous carbon cores. The amorphous cores were then selectively removed from particles by a careful oxidative treatment utilizing its low thermal characters while the more stable carbon shells remained, thus resulting hollow particles. The characterization methods (e.g. N2 sorption, Raman spectroscopy, temperature-programmed oxidation and SEM) proved the successful synthesis of the aspired material. In electric double-layer capacitor (EDLC) testing, this novel hollow core material showed a remarkable enhancement of EDLC’s rate handling ability (75% at a high scan rate) with respect to an entirely solid-mesoporous material. Furthermore, as a fuel cell catalyst support the material showed higher Pt mass activity (a factor of 1.8) compared to a conventional carbon support for methanol oxidation without noticeably decreasing activity in a long-term testing. Therefore, this carbon nanostructure shows great promises as efficient electrode materials for energy storage and conversion systems.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Geochemistry of molybdenum in some stream sediments and waters

NASA Astrophysics Data System (ADS)

Kaback, Dawn S.; Runnells, Donald D.

1980-03-01

Elevated concentrations of Mo are present in both the waters and sediments of Tenmile Creek, downstream from the large Mo deposit at Climax. Colorado. Concentrations of Mo reach a maximum of 10mg/1 in the water and 384μ/g in the (-) 80 mesh fraction of the sediment. The Mo anomaly extends for more than 80 km downstream from Climax, and results from the mining and milling at Climax. Background Mo concentrations in the nearby mountainous area are < 10μg/l (water) and < 5μg/g (sediment). Immediately below three small unmined Mo-rich orebodies elsewhere in Colorado < 3μg/l Mo are present in the waters and 20-30μg/g Mo in the fine fraction of the sediments. The Mo in the sediment of Tenmile Creek is chiefly adsorbed on coatings of amorphous Fe oxyhydroxide. and is similar to its form below two small, unmined Mo deposits. Mining has not changed the character of the chemical processes responsible for Mo dispersion from the Climax site. A modified version of the WATEQF computer program ( PLUMMERet al., 1976) predicts that Tenmile Creek is undersaturated with respect to ferrimolybdite. molybdenite, powellite, and ilsemannite. The Mo in the stream water occurs as the molybdate ion which can be adsorbed on amorphous Fe oxyhydroxides. These predictions are supported by the absence of Mo minerals in the sediment of Tenmile Creek.

Iron-Based Amorphous Coatings Produced by HVOF Thermal Spray Processing-Coating Structure and Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beardsley, M B

2008-03-26

The feasibility to coat large SNF/HLW containers with a structurally amorphous material (SAM) was demonstrated on sub-scale models fabricated from Type 316L stainless steel. The sub-scale model were coated with SAM 1651 material using kerosene high velocity oxygen fuel (HVOF) torch to thicknesses ranging from 1 mm to 2 mm. The process parameters such as standoff distance, oxygen flow, and kerosene flow, were optimized in order to improve the corrosion properties of the coatings. Testing in an electrochemical cell and long-term exposure to a salt spray environment were used to guide the selection of process parameters.

Dispersion and interaction of graphene oxide in amorphous and semi-crystalline nano-composites: a PALS study

NASA Astrophysics Data System (ADS)

Maurer, Frans H. J.; Arza, Carlos R.

2015-06-01

The influence of dispersion and interaction of Graphene Oxide (GO) in semicrystalline Polyhydroxy butyrate (PHB) and glassy amorphous Poly(tBP-oda) is explored by Positron Annihilation Lifetime Spectroscopy (PALS). The ortho-Positronium lifetimes which represent the main free volume hole size of both polymers are mainly affected by the large differences in internal stresses built up by the shrinkage of the polymers during their preparation, restricted by the platelet structure of GO. The ortho-Positronium intensities, which represent the ortho-Positronium formation probabilities, suggest a strong dependency of on the dispersion of the nano-particles and their aspect ratio.

Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films

NASA Astrophysics Data System (ADS)

Harris, V. G.; Elam, W. T.; Koon, N. C.; Hellman, F.

1994-02-01

The anisotropic local structure in a series of amorphous Tb26Fe74 films deposited at different deposition temperatures and having different magnetic anisotropy energies have been investigated using polarization-dependent extended x-ray-absorption fine-structure measurements. Samples deposited at temperatures >=300 K exhibit anisotropic pair correlations where like atomic pairs are favored in plane and unlike pairs are favored out of plane. Both the anisotropic pair correlations and the perpendicular magnetic anisotropy increase with increasing deposition temperature. In contrast, a sample deposited at 77 K was found to have isotropic pair correlations, low perpendicular magnetic anisotropy, and a large (~=1%) in-plane compression.

Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Oh, Kyonghwan; Kwon, Oh-Kyong

2012-03-01

A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

High resolution electron microscopy of a small crack at the superficial layer of enamel.

PubMed

Hayashi, Y

1994-12-01

A small enamel crack was investigated using a high resolution electron microscope. The inside of the crack was filled with aggregates of irregularly oriented plate-like crystals. Amorphous mineral deposits were observed among these aggregates at a low magnification. Selected area electron diffractions indicated that the plate-like crystals consisted of hydroxyapatite (OH-AP), and that the amorphous mineral deposits were a mixture of OH-AP and whitlockite. These findings indicate that this crack may have been formed by occlusal and/or masticatory stress, and that a natural occlusion might occur through mineral deposition at the small crack such as in this case.

The kinetic friction of ZnO nanowires on amorphous SiO2 and SiN substrates

NASA Astrophysics Data System (ADS)

Roy, Aditi; Xie, Hongtao; Wang, Shiliang; Huang, Han

2016-12-01

ZnO nanowires were bent on amorphous SiO2 and SiN substrates in an ambient atmosphere using optical nanomanipulation. The kinetic friction between the nanowires and substrate was determined from the bent shape of the nanowires. The kinetic friction force per unit area, i.e. frictional shear stress, for the ZnO/SiO2 and ZnO/SiN nanowire/substrate systems being measured were 1.05 ± 0.28 and 2.08 ± 0.33 MPa, respectively. The surface roughness and the Hamaker constant of SiO2 and SiN substrates had significant effect on the frictional stresses.

Thin-film amorphous silicon alloy research partnership. Phase 2, Annual technical progress report, 2 February 1996--1 February 1997

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S

This is Phase II of a 3-phase, 3-year program. It is intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous Si alloy modules. We discuss investigations on back reflectors to improve cell performance and investigate uniformity in performance over a 1-sq.-ft. area. We present results on component cell performance, both in the initial and in the light-degraded states, deposited over a 1-sq.-ft. area. The uniformity in deposited is investigated by studying the performance of subcells deposited over the entire area. We also present results on the performance of triple- junction cells and modules. Themore » modules use grid-lines and encapsulants compatible with our production technology. We discuss the novel laser-processing technique that has bee developed at United Solar to improve energy-conversion efficiency and reduce manufacturing costs. We discuss in detail the optimization of the processing steps, and the performance of a laser-processed, triple- junction device of 12.6 cm{sup 2} area is presented. We also present experimental results on investigations of module reliability.« less

Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

NASA Astrophysics Data System (ADS)

McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor

NASA Astrophysics Data System (ADS)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2017-06-01

In this paper, we show that the apparent delocalization of the conduction band reported from first-principles simulations for the high-mobility amorphous oxide semiconductor \\text{InGaZn}{{\\text{O}}4} (a-IGZO) is an artifact induced by the periodic conditions imposed to the model. Given a sufficiently large unit-cell dimension (over 40 Å), the conduction band becomes localized. Such a model size is up to four times the size of commonly used models for the study of a-IGZO. This finding challenges the analyses done so far on the nature of the defects and on the interpretation of numerous electrical measurements. In particular, we re-interpret the meaning of the computed effective mass reported so far in literature. Our finding also applies to materials such as SiZnSnO, ZnSnO, InZnSnO, In2O3 or InAlZnO4 whose models have been reported to display a fully delocalized conduction band in the amorphous phase.

An atomic finite element model for biodegradable polymers. Part 1. Formulation of the finite elements.

PubMed

Gleadall, Andrew; Pan, Jingzhe; Ding, Lifeng; Kruft, Marc-Anton; Curcó, David

2015-11-01

Molecular dynamics (MD) simulations are widely used to analyse materials at the atomic scale. However, MD has high computational demands, which may inhibit its use for simulations of structures involving large numbers of atoms such as amorphous polymer structures. An atomic-scale finite element method (AFEM) is presented in this study with significantly lower computational demands than MD. Due to the reduced computational demands, AFEM is suitable for the analysis of Young's modulus of amorphous polymer structures. This is of particular interest when studying the degradation of bioresorbable polymers, which is the topic of an accompanying paper. AFEM is derived from the inter-atomic potential energy functions of an MD force field. The nonlinear MD functions were adapted to enable static linear analysis. Finite element formulations were derived to represent interatomic potential energy functions between two, three and four atoms. Validation of the AFEM was conducted through its application to atomic structures for crystalline and amorphous poly(lactide). Copyright © 2015 Elsevier Ltd. All rights reserved.

Optimal Composite Material for Low Cost Fabrication of Large Composite Aerospace Structures using NASA Resins or POSS Nanoparticle Modifications

NASA Technical Reports Server (NTRS)

Lamontia, Mark A.; Gruber, Mark B.; Jensen, Brian J.

2006-01-01

Thermoplastic laminates in situ consolidated via tape or tow placement require full mechanical properties. Realizing full properties requires resin crystallinity to be controlled - partial crystallinity leads to unacceptably low laminate compression properties. There are two approaches: utilize an amorphous matrix resin; or place material made from a semi-crystalline resin featuring kinetics faster than the process. In this paper, a matrix resin evaluation and trade study was completed with commercial and NASA amorphous polyimides on the one hand, and with PEKK mixed with POSS nanoparticles for accelerated crystallinity growth on the other. A new thermoplastic impregnated material, 6 mm wide (0.25-in) AS-4 carbon/LaRC(TradeMark)8515 dry polyimide tow, was fabricated. Since LaRC(TradeMark)8515 is fully amorphous, it attains full properties following in situ consolidation, with no post processing required to build crystallinity. The tow in situ processing was demonstrated via in situ thermoplastic filament winding it into rings.

Conducting interface in oxide homojunction: Understanding of superior properties in black TiO 2

DOE PAGES

Lu, Xujie; Chen, Aiping; Luo, Yongkang; ...

2016-09-14

Black TiO 2 nanoparticles with a crystalline core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO 2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO 2 homojunction films consisting of an oxygen-deficient amorphous layer on top of a highly crystalline layer, to simulate the structural/functional configuration of black TiO 2 nanoparticles. Metallic conduction is achieved at the crystalline–amorphous homointerface via electronic interface reconstruction, which we show to be the main reason for the enhanced electron transport of black TiO 2.more » As a result, this work not only achieves an unprecedented understanding of black TiO 2 but also provides a new perspective for investigating carrier generation and transport behavior at oxide interfaces, which are of tremendous fundamental and technological interest.« less

Shock induced crystallization of amorphous Nickel powders

NASA Astrophysics Data System (ADS)

Cherukara, Mathew; Strachan, Alejandro

2015-06-01

Recent experimental work has shown the efficacy of amorphous Ni/crystalline Al composites as energetic materials, with flame velocities twice that of a comparable crystalline Ni/crystalline Al system. Of further interest is the recrystallization mechanisms in the pure amorphous Ni powders, both thermally induced and mechanically induced. We present large-scale molecular dynamics simulations of shock-induced recrystallization in loosely packed amorphous Nickel powders. We study the time dependent nucleation and growth processes by holding the shocked samples at the induced pressures and temperatures for extended periods following the passage of the shock (up to 6 ns). We find that the nanostructure of the recrystallized Ni and time scales of recrystallization are dependent on the piston velocity. At low piston velocities, nucleation events are rare, leading to long incubation times and a relatively coarse nanostructure. At higher piston velocities, local variations in temperature due to jetting phenomena and void collapse, give rise to multiple nucleation events on time scales comparable to the passage of the shock wave, leading to the formation of a fine-grained nanostructure. Interestingly, we observe that the nucleation and growth process occurs in two steps, with the first nuclei crystallizing into the BCC structure, before evolving over time into the expected FCC structure. U.S. Defense Threat Reduction Agency, HDTRA1-10-1-0119 (Program Manager Suhithi Peiris).

Atomic mixing induced by swift heavy ion irradiation of Fe/Zr multilayers

NASA Astrophysics Data System (ADS)

Jaouen, C.; Michel, A.; Pacaud, J.; Dufour, C.; Bauer, Ph.; Gervais, B.

1999-01-01

The mechanism of ion induced mixing and phase change was studied for Fe/Zr multilayers, and specifically for the case of swift heavy ions giving rise to a very large electronic excitation of the target. The multilayers had a modulation of 7.6 nm and an overall composition Fe 69Zr 31. The Zr layers were amorphous whereas the Fe ones were crystalline (bcc) with a very strong (1 1 0) texture in the growth direction. The phase transformation and the composition changes were analysed using the structural and magnetic properties of the Fe component by means of a detailed analysis of the X-ray diffraction profiles and with the aid of backscattering Mössbauer spectroscopy. A complete mixing was observed at a fluence of 10 13 U/cm 2. Both phenomena, the dose dependence of the ion beam mixed amorphous non-magnetic phase and the quantitative evolution of the crystalline iron layer thickness, suggest that mixing occurs in a two-stage process. At an initial stage, an anisotropic diffusion of iron atoms in the amorphous zirconium layers takes place along the interface, while subsequent ion bombardment leads to a generalised transformation through the whole of the Fe layer. Finally, the implications of these observations are discussed in comparison to the plastic deformation phenomena reported for amorphous alloys.

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

NASA Astrophysics Data System (ADS)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys

NASA Astrophysics Data System (ADS)

Vinod, E. M.; Ramesh, K.; Sangunni, K. S.

2015-01-01

Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl structure around 150°C and then to a stable hexagonal structure at high temperatures (>=250°C). It has been generally understood that the phase change takes place between amorphous and the metastable NaCl structure and not between the amorphous and the stable hexagonal phase. In the present work, it is observed that the thermally evaporated (GST)1-xSex thin films (0 <= x <= 0.50) crystallize directly to the stable hexagonal structure for x >= 0.10, when annealed at temperatures >= 150°C. The intermediate NaCl structure has been observed only for x < 0.10. Chemically ordered network of GST is largely modified for x >= 0.10. Resistance, thermal stability and threshold voltage of the films are found to increase with the increase of Se. The contrast in electrical resistivity between the amorphous and crystalline phases is about 6 orders of magnitude. The increase in Se shifts the absorption edge to lower wavelength and the band gap widens from 0.63 to 1.05 eV. Higher resistance ratio, higher crystallization temperature, direct transition to the stable phase indicate that (GST)1-xSex films are better candidates for phase change memory applications.

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

NASA Astrophysics Data System (ADS)

Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

2018-04-01

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

Amorphous to amorphous transition in particle rafts

NASA Astrophysics Data System (ADS)

Varshney, Atul; Sane, A.; Ghosh, Shankar; Bhattacharya, S.

2012-09-01

Space-filling assemblies of athermal hydrophobic particles floating at an air-water interface, called particle rafts, are shown to undergo an unusual phase transition between two amorphous states, i.e., a low density “less-rigid” state and a high density “more-rigid” state, as a function of particulate number density (Φ). The former is shown to be a capillary bridged solid and the latter is shown to be a frictionally coupled one. Simultaneous studies involving direct imaging as well as measuring its mechanical response to longitudinal and shear stresses show that the transition is marked by a subtle structural anomaly and a weakening of the shear response. The structural anomaly is identified from the variation of the mean coordination number, mean area of the Voronoi cells, and spatial profile of the displacement field with Φ. The weakened shear response is related to local plastic instabilities caused by the depinning of the contact line of the underlying fluid on the rough surfaces of the particles.

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

NASA Astrophysics Data System (ADS)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuckelberger, M., E-mail: michael.stuckelberger@epfl.ch; Riesen, Y.; Despeisse, M.

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both themore » p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.« less

Fabrication mechanism of friction-induced selective etching on Si(100) surface

PubMed Central

2012-01-01

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems. PMID:22356699

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

PubMed

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.

Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

PubMed

Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

2015-02-27

Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

Homogeneous Iron Phosphate Nanoparticles by Combustion of Sprays

PubMed Central

Rudin, Thomas; Pratsinis, Sotiris E.

2013-01-01

Low-cost synthesis of iron phosphate nanostructured particles is attractive for large scale fortification of basic foods (rice, bread, etc.) as well as for Li-battery materials. This is achieved here by flame-assisted and flame spray pyrolysis (FASP and FSP) of inexpensive precursors (iron nitrate, phosphate), solvents (ethanol), and support gases (acetylene and methane). The iron phosphate powders produced here were mostly amorphous and exhibited excellent solubility in dilute acid, an indicator of relative iron bioavailability. The amorphous and crystalline fractions of such powders were determined by X-ray diffraction (XRD) and their cumulative size distribution by X-ray disk centrifuge. Fine and coarse size fractions were obtained also by sedimentation and characterized by microscopy and XRD. The coarse size fraction contained maghemite Fe2O3 while the fine was amorphous iron phosphate. Furthermore, the effect of increased production rate (up to 11 g/h) on product morphology and solubility was explored. Using increased methane flow rates through the ignition/pilot flame of the FSP-burner and inexpensive powder precursors resulted in also homogeneous iron phosphate nanoparticles essentially converting the FSP to a FASP process. The powders produced by FSP at increased methane flow had excellent solubility in dilute acid as well. Such use of methane or even natural gas might be economically attractive for large scale flame-synthesis of nanoparticles. PMID:23407874

Reversing and nonreversing heat capacity of poly(lactic acid) in the glass transition region by TMDSC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pyda, Marek; Wunderlich, Bernhard

2005-11-01

A study of the glass transition of an amorphous and a semicrystalline poly(lactic acid) (PLA) is performed with adiabatic calorimetry, differential scanning calorimetry (DSC), and temperature-modulated DSC (TMDSC). The reversing, total, and nonreversing apparent heat capacities of samples with different contents of L- and D-lactic acid and with various thermal histories were evaluated. Different modes of TMDSC analyses of amorphous and semicrystalline PLA were compared to the total heat capacity from standard DSC. The enthalpy relaxation and the cold crystallization in the glass transition region are largely irreversible. The melting is largely irreversible, but a 100% reversing fraction is observedmore » at low temperatures from 375 to 420 K, which becomes small inside the major melting peak at about 440 K. From the TMDSC of amorphous PLA, the combined information on endothermic and exothermic enthalpy relaxation and glass transition were deconvoluted into the reversing and nonreversing components. The glass transition temperature from the reversing heat capacity and the enthalpy relaxation peaks from the nonreversing component shift to higher temperature for increasingly annealed PLA. The relaxation times for aging decrease on cooling until the glass transition is reached and then increase. This behavior is linked to cooperativity. All quantitative thermal analyses are based on the heat capacity of the solid and liquid, evaluated earlier with the advanced thermal analysis system (ATHAS).« less

Damage buildup in Ar-ion-irradiated 3 C-SiC at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.

Above room temperature, the accumulation of radiation damage in 3 C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3 C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving tomore » larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3 C-SiC can be amorphized by bombardment with 500 keV Ar ions even at 250 °C with a relatively large dose rate of ~2×10 13 cm -2 s -1, revealing a dominant role of defect interaction dynamics at elevated temperatures.« less

Damage buildup in Ar-ion-irradiated 3 C-SiC at elevated temperatures

DOE PAGES

Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.; ...

2015-09-14

Above room temperature, the accumulation of radiation damage in 3 C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3 C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving tomore » larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3 C-SiC can be amorphized by bombardment with 500 keV Ar ions even at 250 °C with a relatively large dose rate of ~2×10 13 cm -2 s -1, revealing a dominant role of defect interaction dynamics at elevated temperatures.« less

Space Qualification Test of a-Silicon Solar Cell Modules

NASA Technical Reports Server (NTRS)

Kim, Q.; Lawton, R. A.; Manion, S. J.; Okuno, J. O.; Ruiz, R. P.; Vu, D. T.; Vu, D. T.; Kayali, S. A.; Jeffrey, F. R.

2004-01-01

The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.

Diffusion and the Thermal Stability of Amorphous Copper-Zirconium

NASA Astrophysics Data System (ADS)

Stelter, Eric Carl

Measurements have been made of diffusion and thermal relaxation in amorphous Cu(,50)Zr(,50). Samples were prepared by melt-spinning under vacuum. Diffusion measurements were made over the temperature range from 317 to 385 C, using Ag and Au as substitutional impurities, by means of Auger electron spectrometry (AES) and Rutherford backscattering spectrometry (RBS). Thermal measurements were made by differential scanning calorimetry (DSC) up to 550 C. The diffusion coefficients of Ag and Au in amorphous Cu(,50)Zr(,50) are found to be somewhat higher than, but very close in magnitude to the coefficient of self-diffusion in crystalline Cu at the same temperatures. The activation energies for diffusion in the amorphous alloy are 0.72 to 1.55 eV/atom, much closer to the activation energy for self-diffusion in liquid Cu, 0.42 eV/atom, than that for the crystalline solid, 2.19 eV/atom. The mechanism for diffusion in the amorphous metal is presumably quite different from the monovacancy mechanism dominant in the crystalline solid. The pre-exponential terms are found to be extremely small, on the order of 10('-10) to 10('-11) cm('2)/sec for Ag diffusion. This indicates that diffusion in amorphous Cu(,50)Zr(,50) may involve an extended defect of 10 or more atoms. Analysis of the data in terms of the free -volume model also lends strength to this conclusion and indicates that the glass is composed of liquid-like clusters of 15 to 20 atoms. The initial stage of relaxation in amorphous CuZr occurs with a spectrum of activation energies. The lowest activation energy involved, 0.78 eV/atom, is almost identical to the average activation energy of Ag diffusion in the glass, 0.77 eV/atom, indicating that relaxation occurs primarily through diffusion. The activation energy of crystallization, determined by Kissinger's method, is 3.10 eV/atom. The large difference, on the order of 2.3 eV/atom, between the activation energies of crystallization and diffusion is attributed to the energy required to nucleate the crystalline phase.

Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films.

PubMed

Chang, Chia Min; Chu, Cheng Hung; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

2011-05-09

Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a thin-film gold electrode, are investigated for the purpose of understanding the local electrical conductivity of recorded marks under the influence of focused laser beam. Being amorphous, the as-deposited chalcogenide films have negligible electrical conductivity. With the aid of a focused laser beam, however, we have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones. Within these structures, nano-scale regions of superior local conductivity have been mapped and probed using our high-resolution, high-sensitivity conductive-tip atomic force microscope (C-AFM). Scanning electron microscopy and energy-dispersive spectrometry have also been used to clarify the origins of high conductivity in and around the recorded marks. When the Ge(2)Sb(2)Te(5) layer is sufficiently thin, and when laser crystallization/ablation is used to define long isolated crystalline stripes on the samples, we find the C-AFM-based method of extracting information from the recorded marks to be superior to other forms of microscopy for this particular class of materials. Given the tremendous potential of chalcogenides as the leading media candidates for high-density memories, local electrical characterization of marks recorded on as-deposited amorphous Ge(2)Sb(2)Te(5) films provides useful information for furthering research and development efforts in this important area of modern technology. © 2011 Optical Society of America

Nano-cracks in a synthetic graphite composite for nuclear applications

NASA Astrophysics Data System (ADS)

Liu, Dong; Cherns, David

2018-05-01

Mrozowski nano-cracks in nuclear graphite were studied by transmission electron microscopy and selected area diffraction. The material consisted of single crystal platelets typically 1-2 nm thick and stacked with large relative rotations around the c-axis; individual platelets had both hexagonal and cubic stacking order. The lattice spacing of the (0002) planes was about 3% larger at the platelet boundaries which were the source of a high fraction of the nano-cracks. Tilting experiments demonstrated that these cracks were empty, and not, as often suggested, filled by amorphous material. In addition to conventional Mrozowski cracks, a new type of nano-crack is reported, which originates from the termination of a graphite platelet due to crystallographic requirements. Both types are crucial to understanding the evolution of macro-scale graphite properties with neutron irradiation.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Photovoltaic Subcontract Program

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surek, Thomas; Catalano, Anthony

1993-03-01

This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT)more » project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.« less

Printable organometallic perovskite enables large-area, low-dose X-ray imaging

NASA Astrophysics Data System (ADS)

Kim, Yong Churl; Kim, Kwang Hee; Son, Dae-Yong; Jeong, Dong-Nyuk; Seo, Ja-Young; Choi, Yeong Suk; Han, In Taek; Lee, Sang Yoon; Park, Nam-Gyu

2017-10-01

Medical X-ray imaging procedures require digital flat detectors operating at low doses to reduce radiation health risks. Solution-processed organic-inorganic hybrid perovskites have characteristics that make them good candidates for the photoconductive layer of such sensitive detectors. However, such detectors have not yet been built on thin-film transistor arrays because it has been difficult to prepare thick perovskite films (more than a few hundred micrometres) over large areas (a detector is typically 50 centimetres by 50 centimetres). We report here an all-solution-based (in contrast to conventional vacuum processing) synthetic route to producing printable polycrystalline perovskites with sharply faceted large grains having morphologies and optoelectronic properties comparable to those of single crystals. High sensitivities of up to 11 microcoulombs per air KERMA of milligray per square centimetre (μC mGyair-1 cm-2) are achieved under irradiation with a 100-kilovolt bremsstrahlung source, which are at least one order of magnitude higher than the sensitivities achieved with currently used amorphous selenium or thallium-doped cesium iodide detectors. We demonstrate X-ray imaging in a conventional thin-film transistor substrate by embedding an 830-micrometre-thick perovskite film and an additional two interlayers of polymer/perovskite composites to provide conformal interfaces between perovskite films and electrodes that control dark currents and temporal charge carrier transportation. Such an all-solution-based perovskite detector could enable low-dose X-ray imaging, and could also be used in photoconductive devices for radiation imaging, sensing and energy harvesting.

Printable organometallic perovskite enables large-area, low-dose X-ray imaging.

PubMed

Kim, Yong Churl; Kim, Kwang Hee; Son, Dae-Yong; Jeong, Dong-Nyuk; Seo, Ja-Young; Choi, Yeong Suk; Han, In Taek; Lee, Sang Yoon; Park, Nam-Gyu

2017-10-04

Medical X-ray imaging procedures require digital flat detectors operating at low doses to reduce radiation health risks. Solution-processed organic-inorganic hybrid perovskites have characteristics that make them good candidates for the photoconductive layer of such sensitive detectors. However, such detectors have not yet been built on thin-film transistor arrays because it has been difficult to prepare thick perovskite films (more than a few hundred micrometres) over large areas (a detector is typically 50 centimetres by 50 centimetres). We report here an all-solution-based (in contrast to conventional vacuum processing) synthetic route to producing printable polycrystalline perovskites with sharply faceted large grains having morphologies and optoelectronic properties comparable to those of single crystals. High sensitivities of up to 11 microcoulombs per air KERMA of milligray per square centimetre (μC mGy air -1 cm -2 ) are achieved under irradiation with a 100-kilovolt bremsstrahlung source, which are at least one order of magnitude higher than the sensitivities achieved with currently used amorphous selenium or thallium-doped cesium iodide detectors. We demonstrate X-ray imaging in a conventional thin-film transistor substrate by embedding an 830-micrometre-thick perovskite film and an additional two interlayers of polymer/perovskite composites to provide conformal interfaces between perovskite films and electrodes that control dark currents and temporal charge carrier transportation. Such an all-solution-based perovskite detector could enable low-dose X-ray imaging, and could also be used in photoconductive devices for radiation imaging, sensing and energy harvesting.

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

NASA Astrophysics Data System (ADS)

Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

1998-07-01

This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior.

The effect of high energy concentration source irradiation on structure and properties of Fe-based bulk metallic glass

NASA Astrophysics Data System (ADS)

Pilarczyk, Wirginia

2016-06-01

Metallic glasses exhibit metastable structure and maintain this relatively stable amorphous state within certain temperature range. High intensity laser beam was used for the surface irradiation of Fe-Co-B-Si-Nb bulk metallic glasses. The variable parameter was laser beam pulse energy. For the analysis of structure and properties of bulk metallic glasses and their surface after laser remelting the X-ray analysis, microscopic observation and test of mechanical properties were carried out. Examination of the nanostructure of amorphous materials obtained by high pressure copper mold casting method and the irradiated with the use of TITAN 80-300 HRTEM was carried out. Nanohardness and reduced Young's modulus of particular amorphous and amorphous-crystalline material zone of the laser beam were examined with the use of Hysitron TI950 Triboindenter nanoindenter and with the use of Berkovich's indenter. The XRD and microscopic analysis showed that the test material is amorphous in its structure before irradiation. Microstructure observation with electron transmission microscopy gave information about alloy crystallization in the irradiated process. Identification of given crystal phases allows to determine the kind of crystal phases created in the first place and also further changes of phase composition of alloy. The main value of the nanohardness of the surface prepared by laser beam has the order of magnitude similar to bulk metallic glasses formed by casting process irrespective of the laser beam energy used. Research results analysis showed that the area between parent material and fusion zone is characterized by extraordinarily interesting structure which is and will be the subject of further analysis in the scope of bulk metallic glasses amorphous structure and high energy concentration source. The main goal of this work is the results' presentation of structure and chosen properties of the selected bulk metallic glasses after casting process and after irradiation process employing the high energy concentration sources.

Crystallization of biogenic hydrous amorphous silica

NASA Astrophysics Data System (ADS)

Kyono, A.; Yokooji, M.; Chiba, T.; Tamura, T.; Tuji, A.

2017-12-01

Diatom, Nitzschia cf. frustulum, collected from Lake Yogo, Siga prefecture, Japan was cultured in laboratory. Organic components of the diatom cell were removed by washing with acetone and sodium hypochlorite. The remaining frustules were studied by SEM-EDX, FTIR spectroscopy, and synchrotron X-ray diffraction. The results showed that the spindle-shaped morphology of diatom frustule was composed of hydrous amorphous silica. Pressure induced phase transformation of the diatom frustule was investigated by in situ Raman spectroscopic analysis. With exposure to 0.3 GPa at 100 oC, Raman band corresponding to quartz occurred at ν = 465 cm-1. In addition, Raman bands known as a characteristic Raman pattern of moganite was also observed at 501 cm-1. From the integral ratio of Raman bands, the moganite content in the probed area was estimated to be approximately 50 wt%. With the pressure and temperature effect, the initial morphology of diatom frustule was completely lost and totally changed to a characteristic spherical particle with a diameter of about 2 mm. With keeping the compression of 5.7 GPa at 100 oC, a Raman band assignable to coesite appeared at 538 cm-1. That is, with the compression and heating, the hydrous amorphous silica can be readily crystallized into quartz, moganite, and coesite. The first-principles calculations revealed that a disiloxane molecule stabilized in a trans configuration is twisted 60o and changed into the cis configuration with a close approach of water molecule. It is therefore a reasonable assumption that during crystallization of hydrous amorphous silica, the Si-O-Si bridging unit with the cis configuration would survive as a structural defect and then crystallized into moganite by keeping the geometry. This hypothesis is adaptable to the phase transformation from hydrous amorphous silica to coesite as well, because coesite has the four-membered rings and easily formed from the hydrous amorphous silica under high pressure and high temperature conditions.

Crystallization kinetics of the Cu{sub 50}Zr{sub 50} metallic glass under isothermal conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Qian; Jian, Zengyun, E-mail: jianzengyun@xatu.edu.cn; Xu, Junfeng

2016-12-15

Amorphous structure of the melt-spun Cu{sub 50}Zr{sub 50} amorphous alloy ribbons were confirmed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM). Isothermal crystallization kinetics of these alloy ribbons were investigated using differential scanning calorimetry (DSC). Besides, Arrhenius and Johnson-Mehl-Avrami (JMA) equations were utilized to obtain the isothermal crystallization kinetic parameters. As shown in the results, the local activation energy E{sub α} decreases by a large margin at the crystallized volume fraction α<0.1, which proves that crystallization process is increasingly easy. In addition, the local activation energy E{sub α} is basically constant at 0.1

Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching

NASA Astrophysics Data System (ADS)

Kofuji, Naoyuki; Ishimura, Hiroaki; Kobayashi, Hitoshi; Une, Satoshi

2015-06-01

The effect of gas chemistry during etching of an amorphous carbon layer (ACL) on wiggling has been investigated, focusing especially on the changes in residual stress. Although the HBr gas addition reduces critical dimension loss, it enhances the surface stress and therefore increases wiggling. Attenuated total reflectance Fourier transform infrared spectroscopy revealed that the increase in surface stress was caused by hydrogenation of the ACL surface with hydrogen radicals. Three-dimensional (3D) nonlinear finite element method analysis confirmed that the increase in surface stress is large enough to cause the wiggling. These results also suggest that etching with hydrogen compound gases using an ACL mask has high potential to cause the wiggling.

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

NASA Astrophysics Data System (ADS)

Guo, D. Y.; Qian, Y. P.; Su, Y. L.; Shi, H. Z.; Li, P. G.; Wu, J. T.; Wang, S. L.; Cui, C.; Tang, W. H.

2017-06-01

The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.

Non-iridescent Transmissive Structural Color Filter Featuring Highly Efficient Transmission and High Excitation Purity

PubMed Central

Shrestha, Vivek Raj; Lee, Sang-Shin; Kim, Eun-Soo; Choi, Duk-Yong

2014-01-01

Nanostructure based color filtering has been considered an attractive replacement for current colorant pigmentation in the display technologies, in view of its increased efficiencies, ease of fabrication and eco-friendliness. For such structural filtering, iridescence relevant to its angular dependency, which poses a detrimental barrier to the practical development of high performance display and sensing devices, should be mitigated. We report on a non-iridescent transmissive structural color filter, fabricated in a large area of 76.2 × 25.4 mm2, taking advantage of a stack of three etalon resonators in dielectric films based on a high-index cavity in amorphous silicon. The proposed filter features a high transmission above 80%, a high excitation purity of 0.93 and non-iridescence over a range of 160°, exhibiting no significant change in the center wavelength, dominant wavelength and excitation purity, which implies no change in hue and saturation of the output color. The proposed structure may find its potential applications to large-scale display and imaging sensor systems. PMID:24815530

Effects of Fluid Environment on Microbial Uptake Kinetics

DTIC Science & Technology

1990-09-26

Marine snow parti- is crucial for the performance of all biological wastewater cles, large amorphous aggregates that form in marine sys - treatment...particle trajectories in computer models (Tambo and Wata- nabe 1979). These computer-generated aggregates, de- the %%ater column (Table 2). This analysis

Mechanistic Analysis of Mechano-Electrochemical Interaction in Silicon Electrodes with Surface Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Ankit; Mukherjee, Partha P.

2017-11-17

High-capacity anode materials for lithium-ion batteries, such as silicon, are prone to large volume change during lithiation/delithiation which may cause particle cracking and disintegration, thereby resulting in severe capacity fade and reduction in cycle life. In this work, a stochastic analysis is presented in order to understand the mechano-electrochemical interaction in silicon active particles along with a surface film during cycling. Amorphous silicon particles exhibiting single-phase lithiation incur lower amount of cracking as compared to crystalline silicon particles exhibiting two-phase lithiation for the same degree of volumetric expansion. Rupture of the brittle surface film is observed for both amorphous andmore » crystalline silicon particles and is attributed to the large volumetric expansion of the silicon active particle with lithiation. The mechanical property of the surface film plays an important role in determining the amount of degradation in the particle/film assembly. A strategy to ameliorate particle cracking in silicon active particles is proposed.« less

Doubled heterogeneous crystal nucleation in sediments of hard sphere binary-mass mixtures

NASA Astrophysics Data System (ADS)

Löwen, Hartmut; Allahyarov, Elshad

2011-10-01

Crystallization during the sedimentation process of a binary colloidal hard spheres mixture is explored by Brownian dynamics computer simulations. The two species are different in buoyant mass but have the same interaction diameter. Starting from a completely mixed system in a finite container, gravity is suddenly turned on, and the crystallization process in the sample is monitored. If the Peclet numbers of the two species are both not too large, crystalline layers are formed at the bottom of the cell. The composition of lighter particles in the sedimented crystal is non-monotonic in the altitude: it is first increasing, then decreasing, and then increasing again. If one Peclet number is large and the other is small, we observe the occurrence of a doubled heterogeneous crystal nucleation process. First, crystalline layers are formed at the bottom container wall which are separated from an amorphous sediment. At the amorphous-fluid interface, a secondary crystal nucleation of layers is identified. This doubled heterogeneous nucleation can be verified in real-space experiments on colloidal mixtures.

Large increase in fracture resistance of stishovite with crack extension less than one micrometer

PubMed Central

Yoshida, Kimiko; Wakai, Fumihiro; Nishiyama, Norimasa; Sekine, Risako; Shinoda, Yutaka; Akatsu, Takashi; Nagoshi, Takashi; Sone, Masato

2015-01-01

The development of strong, tough, and damage-tolerant ceramics requires nano/microstructure design to utilize toughening mechanisms operating at different length scales. The toughening mechanisms so far known are effective in micro-scale, then, they require the crack extension of more than a few micrometers to increase the fracture resistance. Here, we developed a micro-mechanical test method using micro-cantilever beam specimens to determine the very early part of resistance-curve of nanocrystalline SiO2 stishovite, which exhibited fracture-induced amorphization. We revealed that this novel toughening mechanism was effective even at length scale of nanometer due to narrow transformation zone width of a few tens of nanometers and large dilatational strain (from 60 to 95%) associated with the transition of crystal to amorphous state. This testing method will be a powerful tool to search for toughening mechanisms that may operate at nanoscale for attaining both reliability and strength of structural materials. PMID:26051871

Carbide-derived carbons - From porous networks to nanotubes and graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presser, V.; Heon, M.; Gogotsi, Y.

2011-02-09

Carbide-derived carbons (CDCs) are a large family of carbon materials derived from carbide precursors that are transformed into pure carbon via physical (e.g., thermal decomposition) or chemical (e.g., halogenation) processes. Structurally, CDC ranges from amorphous carbon to graphite, carbon nanotubes or graphene. For halogenated carbides, a high level of control over the resulting amorphous porous carbon structure is possible by changing the synthesis conditions and carbide precursor. The large number of resulting carbon structures and their tunability enables a wide range of applications, from tribological coatings for ceramics, or selective sorbents, to gas and electrical energy storage. In particular, themore » application of CDC in supercapacitors has recently attracted much attention. This review paper summarizes key aspects of CDC synthesis, properties, and applications. It is shown that the CDC structure and properties are sensitive to changes of the synthesis parameters. Understanding of processing–structure–properties relationships facilitates tuning of the carbon material to the requirements of a certain application.« less

Excellent magnetocaloric properties of melt-extracted Gd-based amorphous microwires

NASA Astrophysics Data System (ADS)

Bingham, N. S.; Wang, H.; Qin, F.; Peng, H. X.; Sun, J. F.; Franco, V.; Srikanth, H.; Phan, M. H.

2012-09-01

We report upon the excellent magnetocaloric properties of Gd53Al24Co20Zr3 amorphous microwires. In addition to obtaining the large magnetic entropy change (-ΔSM ˜ 10.3 J/kg K at TC ˜ 95 K), an extremely large value of refrigerant capacity (RC ˜ 733.4 J/kg) has been achieved for a field change of 5 T in an array of forty microwires arranged in parallel. This value of RC is about 79% and 103% larger than those of Gd (˜410 J/kg) and Gd5Si2Ge1.9Fe0.1 (˜360 J/kg) regardless of their magnetic ordering temperatures. The design and fabrication of a magnetic bed made of these parallel-arranged microwires would thus be a very promising approach for active magnetic refrigeration for nitrogen liquefaction. Since these microwires can easily be assembled as laminate structures, they have potential applications as a cooling device for micro electro mechanical systems and nano electro mechanical systems.

Piezoresistive effect observed in flexible amorphous carbon films

NASA Astrophysics Data System (ADS)

Wang, B.; Jiang, Y. C.; Zhao, R.; Liu, G. Z.; He, A. P.; Gao, J.

2018-05-01

Amorphous carbon (a-C) films, deposited on Si substrates at 500 °C, were transferred onto flexible polyethylene (PE) substrates by a lift-off method, which overcomes the limit of deposition temperature. After transferring, a-C films exhibited a large piezoresistive effect. Such flexible samples could detect the change of bending angle by attaching them onto Cu foils. The ratio of the bending and non-bending resistances reaches as large as ~27.8, which indicates a potential application as a pressure sensor. Also, the a-C/PE sample revealed an enhanced sensitivity to gas pressure compared with the a-C/Si one. By controlling the bending angle, the sensitivity range can be tuned to shift to a low- or high-pressure region. The fatigue test shows a less than 1% change in resistance after 10 000 bending cycles. Our work provides a route to prepare the flexible and piezoresistive carbon-based devices with high sensitivity, controllable pressure-sensing and high stability.

Facile and rapid auto-combustion synthesis of nano-porous γ-Al2O3 by application of hexamethylenetetramine in fuel composition

NASA Astrophysics Data System (ADS)

Salem, Shiva; Salem, Amin; Parni, Mohammad Hosein; Jafarizad, Abbas

2018-06-01

In this article, urea, glycine and hexamethylenetetramine were blended in accordance with the mixture design algorithm to prepare γ-Al2O3 by auto-combustion technique. Aluminum nitrate was then mixed with the stoichiometric contents of prepared fuel solutions to obtain gel systems. The gels exhibited a typical self-propagating combustion behavior at low temperature, directly resulting amorphous materials. The precursors were calcined at various temperatures ranging from 700 to 900 °C. The treated powders were evaluated by determining the methylene blue (MB) adsorption efficiency. The production condition to obtain γ-Al2O3 with maximum surface area depends on fuel composition and calcination temperature. The alumina powder fabricated by this procedure was uniformly distributed and contains nano-sized secondary particles with diameter about 10-30 nm in which the average pore size is 3.2 nm induced large surface area, 240 m2g-1. The employment of hexamethylenetetramine provides a potential for synthesis of γ-Al2O3 at lower temperature, 700 °C, with maximum MB removal efficiency.

Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide

PubMed Central

Lv, Wei; Henry, Asegun

2016-01-01

Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO2). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials. PMID:27767082

Development of High Strength Ni-Cu-Zr-Ti-Si-Sn In-Situ Bulk Metallic Glass Composites Reinforced by Hard B2 Phase

NASA Astrophysics Data System (ADS)

Park, Hyo Jin; Hong, Sung Hwan; Park, Hae Jin; Kim, Young Seok; Kim, Jeong Tae; Na, Young Sang; Lim, Ka Ram; Wang, Wei-Min; Kim, Ki Buem

2018-03-01

In the present study, the influence of atomic ratio of Zr to Ti on the microstructure and mechanical properties of Ni-Cu-Zr-Ti-Si-Sn alloys is investigated. The alloys were designed by fine replacement of Ti for Zr from Ni39Cu20Zr36-xTixSi2Sn3. The increase of Ti content enhances glass forming ability of the alloy by suppression of formation of (Ni, Cu)10(Zr, Ti)7 phase during solidification. With further increasing Ti content up to 24 at.%, the B2 phase is introduced in the amorphous matrix with a small amount of B19' phase from alloy melt. The bulk metallic glass composite containing B2 phase with a volume fraction of 10 vol% exhibits higher fracture strength ( 2.5 GPa) than that of monolithic bulk metallic glass ( 2.3 GPa). This improvement is associated to the individual mechanical characteristics of the B2 phase and amorphous matrix. The B2 phase exhibits higher hardness and modulus than those of amorphous matrix as well as effective stress accommodation up to the higher stress level than the yield strength of amorphous matrix. The large stress accommodation capacity of the hard B2 phase plays an important factor to improve the mechanical properties of in situ Ni-based bulk metallic glass composites.

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

NASA Astrophysics Data System (ADS)

Fong, S. W.; Sood, A.; Chen, L.; Kumari, N.; Asheghi, M.; Goodson, K. E.; Gibson, G. A.; Wong, H.-S. P.

2016-07-01

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100-500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m-3 for SiO2 and 10.2 → 8.27 × 1028 m-3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Phosphate and phytate adsorption and precipitation on ferrihydrite surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaoming; Hu, Yongfeng; Tang, Yadong

Phosphorous (P) sorption on mineral surfaces largely controls P mobility and bioavailability, hence its pollution potential, but the sorption speciation and mechanism remain poorly understood. In this study, we have identified and quantified the speciation of both phosphate and phytate sorbed on ferrihydrite with various P loadings at pH 3–8 using differential atomic pair distribution function (d-PDF) analysis, synchrotron-based X-ray diffraction (XRD), and P and Fe K-edge X-ray absorption near edge structure (XANES) and attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. With increasing P sorption loading for both phosphate and phytate, the sorption mechanism transits from bidentate-binuclear surface complexation tomore » unidentified ternary complexation and to precipitation of amorphous FePO 4 and amorphous Fe-phytate. At a given P sorption loading, phosphate precipitates more readily than phytate. Both phosphate and phytate promote ferrihydrite dissolution with phytate more intensively, but the dissolved FeIII concentration in the bulk solution is low because the majority of the released Fe III precipitate with the anions. Results also show that amorphous FePO 4 and amorphous Fe-phytate have similar PO 4 local coordination environment. In conclusion, these new insights into the P surface complexation and precipitation, and the ligand-promoted dissolution behavior improve our understanding of P fate in soils, aquatic environment and water treatment systems as mediated by mineral-water interfacial reactions.« less

Phosphate and phytate adsorption and precipitation on ferrihydrite surfaces

DOE PAGES

Wang, Xiaoming; Hu, Yongfeng; Tang, Yadong; ...

2017-09-26

Phosphorous (P) sorption on mineral surfaces largely controls P mobility and bioavailability, hence its pollution potential, but the sorption speciation and mechanism remain poorly understood. In this study, we have identified and quantified the speciation of both phosphate and phytate sorbed on ferrihydrite with various P loadings at pH 3–8 using differential atomic pair distribution function (d-PDF) analysis, synchrotron-based X-ray diffraction (XRD), and P and Fe K-edge X-ray absorption near edge structure (XANES) and attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. With increasing P sorption loading for both phosphate and phytate, the sorption mechanism transits from bidentate-binuclear surface complexation tomore » unidentified ternary complexation and to precipitation of amorphous FePO 4 and amorphous Fe-phytate. At a given P sorption loading, phosphate precipitates more readily than phytate. Both phosphate and phytate promote ferrihydrite dissolution with phytate more intensively, but the dissolved FeIII concentration in the bulk solution is low because the majority of the released Fe III precipitate with the anions. Results also show that amorphous FePO 4 and amorphous Fe-phytate have similar PO 4 local coordination environment. In conclusion, these new insights into the P surface complexation and precipitation, and the ligand-promoted dissolution behavior improve our understanding of P fate in soils, aquatic environment and water treatment systems as mediated by mineral-water interfacial reactions.« less

Phonon-interface scattering in multilayer graphene on an amorphous support

PubMed Central

Sadeghi, Mir Mohammad; Jo, Insun; Shi, Li

2013-01-01

The recent studies of thermal transport in suspended, supported, and encased graphene just began to uncover the richness of two-dimensional phonon physics, which is relevant to the performance and reliability of graphene-based functional materials and devices. Among the outstanding questions are the exact causes of the suppressed basal-plane thermal conductivity measured in graphene in contact with an amorphous material, and the layer thickness needed for supported or embedded multilayer graphene (MLG) to recover the high thermal conductivity of graphite. Here we use sensitive in-plane thermal transport measurements of graphene samples on amorphous silicon dioxide to show that full recovery to the thermal conductivity of the natural graphite source has yet to occur even after the MLG thickness is increased to 34 layers, considerably thicker than previously thought. This seemingly surprising finding is explained by long intrinsic scattering mean free paths of phonons in graphite along both basal-plane and cross-plane directions, as well as partially diffuse scattering of MLG phonons by the MLG-amorphous support interface, which is treated by an interface scattering model developed for highly anisotropic materials. Based on the phonon transmission coefficient calculated from reported experimental thermal interface conductance results, phonons emerging from the interface consist of a large component that is scattered across the interface, making rational choice of the support materials a potential approach to increasing the thermal conductivity of supported MLG. PMID:24067656

Oxygen deficiency and Sn doping of amorphous Ga{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; Unold, T.; Berry, J.

2016-01-11

The potential of effectively n-type doping Ga{sub 2}O{sub 3} considering its large band gap has made it an attractive target for integration into transistors and solar cells. As a result amorphous GaO{sub x} is now attracting interest as an electron transport layer in solar cells despite little information on its opto-electrical properties. Here we present the opto-electronic properties, including optical band gap, electron affinity, and charge carrier density, for amorphous GaO{sub x} thin films deposited by pulsed laser deposition. These properties are strongly dependent on the deposition temperature during the deposition process. The deposition temperature has no significant influence onmore » the general structural properties but produces significant changes in the oxygen stoichiometry of the films. The density of the oxygen vacancies is found to be related to the optical band gap of the GaO{sub x} layer. It is proposed that the oxygen deficiency leads to defect band below the conduction band minimum that increases the electron affinity. These properties facilitate the use of amorphous GaO{sub x} as an electron transport layer in Cu(In,Ga)Se{sub 2} and in Cu{sub 2}O solar cells. Further it is shown that at low deposition temperatures, extrinsic doping with Sn is effective at low Sn concentrations.« less

Innovations in microelectronics and solid state at North Carolina Agricultural and Technical State University

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1977-01-01

Research in the following areas is described: (1) Characterization and applications of metallic oxide devices; (2) Electronic properties and energy conversion in organic amorphous semiconductors; (3) Material growth and characterization directed toward improving 3-5 heterojunction solar cells.

d -zero magnetism in nanoporous amorphous alumina membranes

NASA Astrophysics Data System (ADS)

Esmaeily, Amir Sajad; Venkatesan, M.; Sen, S.; Coey, J. M. D.

2018-05-01

Nanoporous alumina membranes produced by mild or hard anodization have a controllable pore surface area up to 400 times that of the membrane itself. They exhibit a temperature-independent and almost anhysteretic saturating response to a magnetic field up to temperatures of 300 K or more. The magnetism, which cannot be explained by the ˜1 ppm of transition-metal impurities present in the membranes, increases with the area of the open nanopores, reaching values of 0.6 Bohr magnetons per square nanometer for mild anodization and 8 Bohr magnetons per square nanometer for the faster hard anodization process. Crystallization of the membrane or treatment with salicylic acid can destroy 90% of the magnetism. The effect is therefore linked with the surfaces of the open pores in the amorphous A l2O3 . Possible explanations in terms of electrons associated with oxygen vacancies (F or F+ centers) are considered. It is concluded that the phenomenon involved is likely to be saturating giant orbital paramagnetism, rather than any sort of collective ferromagnetic spin order.

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Atomistic Texture of Amorphous Manganese Oxides for Electrochemical Water Splitting Revealed by Ab Initio Calculations Combined with X-ray Spectroscopy.

PubMed

Mattioli, Giuseppe; Zaharieva, Ivelina; Dau, Holger; Guidoni, Leonardo

2015-08-19

Amorphous transition-metal (hydr)oxides are considered as the most promising catalysts that promote the oxidation of water to molecular oxygen, protons, and "energized" electrons, and, in turn, as fundamental parts of "artificial leaves" that can be exploited for large scale generation of chemical fuels (e.g., hydrogen) directly from sunlight. We present here a joint theoretical-experimental investigation of electrodeposited amorphous manganese oxides with different catalytic activities toward water oxidation (MnCats). Combining the information content of X-ray absorption fine structure (XAFS) measurements with the predictive power of ab initio calculations based on density functional theory, we have been able to identify the essential structural and electronic properties of MnCats. We have elucidated (i) the localization and structural connection of Mn(II), Mn(III), and Mn(IV) ions in such amorphous oxides and (ii) the distribution of protons at the MnCat/water interface. Our calculations result in realistic 3D models of the MnCat atomistic texture, formed by the interconnection of small planar Mn-oxo sheets cross-linked through different kinds of defective Mn atoms, isolated or arranged in closed cubane-like units. Essential for the catalytic activity is the presence of undercoordinated Mn(III)O5 units located at the boundary of the amorphous network, where they are ready to act as hole traps that trigger the oxidation of neighboring water molecules when the catalyst is exposed to an external positive potential. The present validation of a sound 3D model of MnCat improves the accuracy of XAFS fits and opens the way for the development of mechanistic schemes of its functioning beyond a speculative level.

Ultrastructure in frozen/etched saline solutions: on the internal cleansing of ice.

PubMed

Menger, Fredric M; Galloway, Ashley L; Chlebowski, Mary E; Apkarian, Robert P

2004-05-19

Seawater, with its 3.5% salt content, freezes into hexagonal ice (Ih) that encloses concentrated brine within its matrix. When unsubmerged sea ice reaches a certain height and temperature, the brine drains downward through narrow channels. This mechanism was now modeled by frozen 2-3.5% saline as investigated by cryo-etch high-resolution secondary electron microscopy. Thus, saline was either plunge-frozen in liquid ethane at -183 degrees C or else high-pressure frozen to -105 degrees C in 5-6 ms. Ice from a freshly exposed surface was then subjected to a high-vacuum sublimation ("etching"), a procedure that removes pure bulk ice in preference to ice from frozen hydrated salt. After chromium-coating the etched surface with a 2-nm film, the sample was examined by cryo-HRSEM. Granular icy "fences" were seen surrounding empty areas where amorphous ice had originally resided. Since the fences, about 1-2 mum high, survived the etching, it is likely that they consist of frozen brine. The presence of such fences suggests that, during freezing, saline can purge itself of salt with remarkable speed (5-6 ms). Alternatively, channels (perhaps routed around submicroscopic crystallites of cubic ice (Ic) embedded in the amorphous ice at -105 degrees C) can guide the migration of salt to the periphery of ice patches. Macromolecules fail to form fences because they diffuse too slowly or because they are too large to pass through the channels.

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

Charge transport model in solid-state avalanche amorphous selenium and defect suppression design

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Miranda, Yesenia; Liu, Hongyu; Zhao, Wei

2016-01-01

Avalanche amorphous selenium (a-Se) in a layer of High Gain Avalanche Rushing Photoconductor (HARP) is being investigated for its use in large area medical imagers. Avalanche multiplication of photogenerated charge requires electric fields greater than 70 V μm-1. For a-Se to withstand this high electric field, blocking layers are used to prevent the injection of charge carriers from the electrodes. Blocking layers must have a high injection barrier and deep trapping states to reduce the electric field at the interface. In the presence of a defect in the blocking layer, a distributed resistive layer (DRL) must be included into the structure to build up space charge and reduce the electric field in a-Se and the defect. A numerical charge transport model has been developed to optimize the properties of blocking layers used in various HARP structures. The model shows the incorporation of a DRL functionality into the p-layer can reduce dark current at a point defect by two orders of magnitude by reducing the field in a-Se to the avalanche threshold. Hole mobility in a DRL of ˜10-8 cm2 V-1 s-1 at 100 V μm-1 as demonstrated by the model can be achieved experimentally by varying the hole mobility of p-type organic or inorganic semiconductors through doping, e.g., using Poly(9-vinylcarbozole) doped with 1%-3% (by weight) of poly(3-hexylthiopene).

Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies

NASA Astrophysics Data System (ADS)

Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Mannan, Mohammad A.; Mandal, Krishna C.

2015-08-01

Amorphous selenium (a-Se) alloy materials with arsenic, chlorine, boron, and lithium doping were synthesized for room temperature nuclear radiation detector applications using an optimized alloy composition for enhanced charge transport properties. A multi-step synthetic process has been implemented to first synthesize Se-As and Se-Cl master alloys from zone-refined Se (~ 7N), and then synthesized the final alloys for thermally evaporated large-area thin-film deposition on oxidized aluminum (Al/Al2O3) and indium tin oxide (ITO) coated glass substrates. Material purity, morphology, and compositional characteristics of the alloy materials and films were examined using glow discharge mass spectroscopy (GDMS), inductively coupled plasma mass spectroscopy (ICP-MS), differential scanning calorimetry (DSC), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive analysis by x-rays (EDAX). Current-Voltage (I-V) measurements were carried out to confirm very high resistivity of the alloy thin-films. We have further investigated the junction properties of the alloy films with a wide variety of metals with different work functions (Au, Ni, W, Pd, Cu, Mo, In, and Sn). The aim was to investigate whether the choice of metal can improve the performance of fabricated detectors by minimizing the dark leakage current. For various metal contacts, we have found significant dependencies of metal work functions on current transients by applying voltages from -800 V to +1000 V.

Detecting Nanophase Weathering Products with CheMin: Reference Intensity Ratios of Allophane, Aluminosilicate Gel, and Ferrihydrite

NASA Technical Reports Server (NTRS)

Rampe, E. B.; Bish, D. L.; Chipera, S. J.; Morris, R. V.; Achilles, C. N.; Ming, D W.; Blake, D. F.; Anderson, R. C.; Bristow, T. F.; Crisp, A.;

Boson peak and Ioffe-Regel criterion in amorphous siliconlike materials: The effect of bond directionality.

PubMed

Beltukov, Y M; Fusco, C; Parshin, D A; Tanguy, A

2016-02-01

The vibrational properties of model amorphous materials are studied by combining complete analysis of the vibration modes, dynamical structure factor, and energy diffusivity with exact diagonalization of the dynamical matrix and the kernel polynomial method, which allows a study of very large system sizes. Different materials are studied that differ only by the bending rigidity of the interactions in a Stillinger-Weber modelization used to describe amorphous silicon. The local bending rigidity can thus be used as a control parameter, to tune the sound velocity together with local bonds directionality. It is shown that for all the systems studied, the upper limit of the Boson peak corresponds to the Ioffe-Regel criterion for transverse waves, as well as to a minimum of the diffusivity. The Boson peak is followed by a diffusivity's increase supported by longitudinal phonons. The Ioffe-Regel criterion for transverse waves corresponds to a common characteristic mean-free path of 5-7 Å (which is slightly bigger for longitudinal phonons), while the fine structure of the vibrational density of states is shown to be sensitive to the local bending rigidity.

Anti-fibrillogenic properties of phthalocyanines: effect of the out-of-plane ligands.

PubMed

Kovalska, V; Cherepanov, V; Losytskyy, M; Chernii, S; Senenko, A; Chernii, V; Tretyakova, I; Yarmoluk, S; Volkov, S

2014-12-15

The axially-coordinated phthalocyanines were previously reported as agents possessing strong anti-fibrillogenic properties. In the presented study we used the atomic force microscopy to investigate the intermediates and the products of insulin aggregation reaction formed in the presence of Zr and Hf phthalocyanine complexes that contain out-of-plane ligands of different size and nature. It is shown that while phthalocyanine-free insulin generated mostly amyloid fibrils with a diameter of 2-8nm and a length of up to 5μm, the presence of phthalocyanines with spatial bulky ligands (PcZrDbm2) leads to the redirection of the fibrillization reaction to the formation of the spherical oligomer aggregates with a diameter of 4-12nm. At the same time the phthalocyanine complex PcHfCl2 having the small-volume ligands induces the formation of large size insulin aggregates with a height of about 100nm that are supposed to be amorphous species. The study of the aggregation intermediates showed the certain similarity of the reaction passing for phthalocyanine-free insulin and insulin in the presence of PcZrDbm2. The large-size amorphous species were observed at the beginning of reaction, later they dissociated, leading to the formation and growth of the smaller size particles. The amyloid-sensitive cyanine dye 7519 demonstrates the strong fluorescent response both in the presence of fibrils and spherical oligomers, while it is non-sensitive to amorphous aggregates. Copyright © 2014 Elsevier Ltd. All rights reserved.

New design strategy for reversible plasticity shape memory polymers with deformable glassy aggregates.

PubMed

Lin, Tengfei; Tang, Zhenghai; Guo, Baochun

2014-12-10

Reversible plasticity shape memory (RPSM) is a new concept in the study of shape memory performance behavior and describes a phenomenon in which shape memory polymers (SMPs) can undergo a large plastic deformation at room temperature and subsequently recover their original shape upon heating. To date, RPSM behavior has been demonstrated in only a few polymers. In the present study, we implement a new design strategy, in which deformable glassy hindered phenol (AO-80) aggregates are incorporated into an amorphous network of epoxidized natural rubber (ENR) cured with zinc diacrylate (ZDA), in order to achieve RPSM properties. We propose that AO-80 continuously tunes the glass transition temperature (Tg) and improves the chain mobility of the SMP, providing traction and anchoring the ENR chains by intermolecular hydrogen bonding interactions. The RPSM behavior of the amorphous SMPs is characterized, and the results demonstrate good fixity at large deformations (up to 300%) and excellent recovery upon heating. Large energy storage capacities at Td in these RPSM materials are demonstrated compared with those achieved at elevated temperature in traditional SMPs. Interestingly, the further revealed self-healing properties of these materials are closely related to their RPSM behavior.

Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics.

PubMed

Jang, Hyun-June; Joong Lee, Ki; Jo, Kwang-Won; Katz, Howard E; Cho, Won-Ju; Shin, Yong-Beom

2017-07-18

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm 2 /Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

Phase field crystal simulation of stress induced localized solid-state amorphization in nanocrystalline materials

NASA Astrophysics Data System (ADS)

Xi, Wen; Song, Xiaoqing; Hu, Shi; Chen, Zheng

2017-11-01

In this work, the phase field crystal (PFC) method is used to study the localized solid-state amorphization (SSA) and its dynamic transformation process in polycrystalline materials under the uniaxial tensile deformation with different factors. The impacts of these factors, including strain rates, temperatures and grain sizes, are analyzed. Kinetically, the ultra-high strain rate causes the lattice to be seriously distorted and the grain to gradually collapse, so the dislocation density rises remarkably. Therefore, localized SSA occurs. Thermodynamically, as high temperature increases the activation energy, the atoms are active and prefer to leave the original position, which induce atom rearrangement. Furthermore, small grain size increases the percentage of grain boundary and the interface free energy of the system. As a result, Helmholtz free energy increases. The dislocations and Helmholtz free energy act as the seed and driving force for the process of the localized SSA. Also, the critical diffusion-time step and the percentage of amorphous region areas are calculated. Through this work, the PFC method is proved to be an effective means to study localized SSA under uniaxial tensile deformation.

Phase field crystal simulation of stress induced localized solid-state amorphization in nanocrystalline materials.

PubMed

Xi, Wen; Song, Xiaoqing; Hu, Shi; Chen, Zheng

2017-11-29

In this work, the phase field crystal (PFC) method is used to study the localized solid-state amorphization (SSA) and its dynamic transformation process in polycrystalline materials under the uniaxial tensile deformation with different factors. The impacts of these factors, including strain rates, temperatures and grain sizes, are analyzed. Kinetically, the ultra-high strain rate causes the lattice to be seriously distorted and the grain to gradually collapse, so the dislocation density rises remarkably. Therefore, localized SSA occurs. Thermodynamically, as high temperature increases the activation energy, the atoms are active and prefer to leave the original position, which induce atom rearrangement. Furthermore, small grain size increases the percentage of grain boundary and the interface free energy of the system. As a result, Helmholtz free energy increases. The dislocations and Helmholtz free energy act as the seed and driving force for the process of the localized SSA. Also, the critical diffusion-time step and the percentage of amorphous region areas are calculated. Through this work, the PFC method is proved to be an effective means to study localized SSA under uniaxial tensile deformation.

Specific energy yield comparison between crystalline silicon and amorphous silicon based PV modules

NASA Astrophysics Data System (ADS)

Ferenczi, Toby; Stern, Omar; Hartung, Marianne; Mueggenburg, Eike; Lynass, Mark; Bernal, Eva; Mayer, Oliver; Zettl, Marcus

2009-08-01

As emerging thin-film PV technologies continue to penetrate the market and the number of utility scale installations substantially increase, detailed understanding of the performance of the various PV technologies becomes more important. An accurate database for each technology is essential for precise project planning, energy yield prediction and project financing. However recent publications showed that it is very difficult to get accurate and reliable performance data of theses technologies. This paper evaluates previously reported claims the amorphous silicon based PV modules have a higher annual energy yield compared to crystalline silicon modules relative to their rated performance. In order to acquire a detailed understanding of this effect, outdoor module tests were performed at GE Global Research Center in Munich. In this study we examine closely two of the five reported factors that contribute to enhanced energy yield of amorphous silicon modules. We find evidence to support each of these factors and evaluate their relative significance. We discuss aspects for improvement in how PV modules are sold and identify areas for further study further study.

In situ dynamic TEM characterization of unsteady crystallization during laser processing of amorphous germanium

DOE PAGES

Egan, Garth C.; Li, Tian T.; Roehling, John D.; ...

2017-10-03

The unsteady propagation mechanism for the crystallization of amorphous germanium (a-Ge) was studied with in situ movie-mode dynamic transmission electron microscopy (MM-DTEM). We used short laser pulses to heat sputter-deposited a-Ge films and the resulting crystallization process was imaged with up to 16 sequential 50 ns long electron pulses separated by a controlled delay that was varied between 0.5 and 5 μs. The unsteady crystallization in the radial, net-growth direction was observed to occur at a decreasing rate of ~1.5–0.2 m/s through a mechanism involving the formation of discrete ~1.1 μm wide bands that grew with velocities of 9–12 m/smore » perpendicular to the radial direction and along the perimeter of the crystallized area. The crystallization rate and resulting microstructure were consistent with a liquid-mediated growth mechanism, which suggests that locally the band front reaches the amorphous melting temperature of Ge. Furthermore, a mechanism based on the notion of a critical temperature is proposed to explain the unsteady, banded behavior.« less

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

DOE PAGES

Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; ...

2015-12-02

Ti/Al 2O 3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barriermore » properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

NASA Astrophysics Data System (ADS)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

JTEC panel on display technologies in Japan

NASA Technical Reports Server (NTRS)

Tannas, Lawrence E., Jr.; Glenn, William E.; Credelle, Thomas; Doane, J. William; Firester, Arthur H.; Thompson, Malcolm

1992-01-01

This report is one in a series of reports that describes research and development efforts in Japan in the area of display technologies. The following are included in this report: flat panel displays (technical findings, liquid crystal display development and production, large flat panel displays (FPD's), electroluminescent displays and plasma panels, infrastructure in Japan's FPD industry, market and projected sales, and new a-Si active matrix liquid crystal display (AMLCD) factory); materials for flat panel displays (liquid crystal materials, and light-emissive display materials); manufacturing and infrastructure of active matrix liquid crystal displays (manufacturing logistics and equipment); passive matrix liquid crystal displays (LCD basics, twisted nematics LCD's, supertwisted nematic LCD's, ferroelectric LCD's, and a comparison of passive matrix LCD technology); active matrix technology (basic active matrix technology, investment environment, amorphous silicon, polysilicon, and commercial products and prototypes); and projection displays (comparison of Japanese and U.S. display research, and technical evaluation of work).

Photovoltaic Subcontract Program. Annual report, FY 1992

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1993-03-01

This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R&D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project,more » PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.« less

Versatile technique for assessing thickness of 2D layered materials by XPS

NASA Astrophysics Data System (ADS)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

2018-03-01

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE PAGES

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; ...

2018-02-07

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Versatile technique for assessing thickness of 2D layered materials by XPS.

PubMed

Zemlyanov, Dmitry Y; Jespersen, Michael; Zakharov, Dmitry N; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C; Fisher, Timothy S; Voevodin, Andrey A

2018-03-16

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Diamondlike carbon as a moisture barrier and antireflecting coating on optical materials

NASA Technical Reports Server (NTRS)

Woollam, John A.; De, Bhola N.; Chen, L. Y.; Pouch, John J.; Alterovitz, Samuel A.

1990-01-01

Diamondlike carbon (DLC) is amorphous, hard, semitransparent, and is under consideration for use as a coating material for infrared optics. DLC is also designated as a-C:H to indicate its amorphous nature as well as to indicate the presence of large (20 to 55 percent) amounts of hydrogen in the film. Two important questions arise with respect to use of DLC in infrared optics. Will the lack of grain boundaries help to keep moisture from penetrating the film. Secondly, application as an antireflection coating places restrictions on the allowed values of the index of refraction of the film relative to the particular substrate material being used. Will DLC have the correct index range. These two questions are addressed in this paper.

Interpretation of electron diffraction patterns from amorphous and fullerene-like carbon allotropes.

PubMed

Czigány, Zsolt; Hultman, Lars

2010-06-01

The short range order in amorphous and fullerene-like carbon compounds has been characterized by selected area electron diffraction (SAED) patterns and compared with simulations of model nanoclusters. Broad rings in SAED pattern from fullerene-like CN(x) at approximately 1.2, approximately 2, and approximately 3.5A indicate short-range order similar to that in graphite, but peak shifts indicate sheet curvature in agreement with high-resolution transmission electron microscopy images. Fullerene-like CP(x) exhibits rings at approximately 1.6 and 2.6A, which can be explained if it consists of fragments with short-range order and high curvature similar to that of C(20). Copyright 2010 Elsevier B.V. All rights reserved.

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitoma, Nobuhiko, E-mail: MITOMA.Nobuhiko@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

Amorphous metal composites

DOEpatents

Byrne, Martin A.; Lupinski, John H.

1984-01-01

An improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

PubMed

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium phosphate (ACP) environments could also arise from a transient amorphous precursor phase of apatite. Here, we provide an NMR spectroscopy methodology to reveal the origin of these ACP environments in bone mineral or in biomimetic apatite. The 1 H magnetization exchange between protons arising from amorphous and crystalline domains shows unambiguously that an ACP layer coats the apatitic crystalline core of bone et biomimetic apatite platelets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Toughening Fe-based Amorphous Coatings by Reinforcement of Amorphous Carbon.

PubMed

Wang, Wei; Zhang, Cheng; Zhang, Zhi-Wei; Li, Yi-Cheng; Yasir, Muhammad; Wang, Hai-Tao; Liu, Lin

2017-06-22

Toughening of Fe-based amorphous coatings meanwhile maintaining a good corrosion resistance remains challenging. This work reports a novel approach to improve the toughness of a FeCrMoCBY amorphous coating through in-situ formation of amorphous carbon reinforcement without reducing the corrosion resistance. The Fe-based composite coating was prepared by high velocity oxy-fuel (HVOF) thermal spraying using a pre-mixed Fe-based amorphous/nylon-11 polymer feedstock powders. The nylon-11 powders were in-situ carbonized to amorphous carbon phase during thermal spraying process, which homogeneously distributed in the amorphous matrix leading to significant enhancement of toughness of the coating. The mechanical properties, including hardness, impact resistance, bending and fatigue strength, were extensively studied by using a series of mechanical testing techniques. The results revealed that the composite coating reinforced by amorphous carbon phase exhibited enhanced impact resistance and nearly twice-higher fatigue strength than that of the monolithic amorphous coating. The enhancement of impact toughness and fatigue properties is owed to the dumping effect of the soft amorphous carbon phase, which alleviated stress concentration and decreased crack propagation driving force.

Inkjet printing of single-crystal films.

PubMed

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices

NASA Astrophysics Data System (ADS)

Chen, Yu-Ze; Medina, Henry; Lin, Hung-Chiao; Tsai, Hung-Wei; Su, Teng-Yu; Chueh, Yu-Lun

2015-01-01

Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes. Electronic supplementary information (ESI) available: Experimental methods; pictures of a new quartz tube and an aged quartz tube before and after annealing Cu foil at 1025 °C for 2 h; Raman spectrum of as-deposited a-C layer; XPS depth profiles of 25 nm-thick pre-deposited a-C film after annealing in the presence of Cu gaseous molecules and the corresponding transformation ratios; ICP-MS results of Cu gaseous molecules captured by the formation of the Ni-Cu alloy; SEM-EDS results of samples with different thicknesses of pre-deposited a-C films; UV-Vis spectrum of the graphene directly transformed from the 5 nm-thick pre-deposited a-C film on quartz substrate. See DOI: 10.1039/c4nr04627g

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Hanak, J. J.; Kaschmitter, J. L.

1991-05-01

An ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) has been identified as a potential low-cost power source for small satellites. We have conducted a survey of the status of the a-Si PV array technology with respect to present and future performance, availability, cost and risks. For existing, experimental array 'blankets' made of commercial cell material, utilizing metal foil substrates, the BOL performance at AM0 and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated EOL power output after 10 years in a nominal low-earth orbit would be 80 percent of BOL, the degradation being due to largely light-induced effects (minus 10 to minus 15 percent) and in part (minus 5 percent) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing US national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long-range development program toward developing of this important power source for space. One new US developer has emerged as a future potential supplier of a-Si PV devices on thin, polyimide substrates.

Interface-coupled dissolution-precipitation processes allow a photonic crystal to replace an ionic crystal along lattice planes

NASA Astrophysics Data System (ADS)

Liesegang, Moritz; Milke, Ralf

2015-04-01

Nanocolloidal amorphous silica (SiO2×nH2O) is a major component of environmental aqueous solutions and surface coatings on rocks or mineral grains. Detailed knowledge of amorphous silica formation is indispensable for a better understanding of silicate rock alteration and diagenetic processes. We analyzed a wide range of samples from the Australian precious opal fields in South Australia and Queensland using petrographic microscopy, XRPD, SEM, and EPMA to characterize opaline silica, the mineral assemblage, and the host rock. Over the past 90 Ma the Lower Cretaceous lithologies of central Australia have undergone a weathering regime ranging from sub-tropical to arid, in which pH fluctuated from alkaline to acidic. The prolonged chemical alteration of sedimentary rocks derived from andesitic volcaniclastics and organic matter liberated large volumes of silica into solution, eventually leading to precipitation of nanocolloidal amorphous silica and formation of opal-A. A regular arrangement of close-packed uniform (monodisperse) spheres permits diffraction of white light and gives rise to the famous play-of-color. The opals in this study consist of silica spheres with an average diameter of 100-320 nm and often show a prominent core-shell structure. Two groups are separated by their relative standard deviation (RSD): monodisperse spheres (RSD<6%) and polydisperse spheres (RDS>10%). Monodisperse and polydisperse spheres are separated by their Na/K ratio, restricting the appearance of monodisperse spheres to values <1.2 and polydisperse spheres to values >3.0. We suggest that the Na/K ratio represents significant differences in the overall solution characteristics. The associated minerals (e.g., alunite, gypsum, kaolinite, K feldspar) indicate large variations of fluid composition and pH. Probably, uniform spheres grew at acidic pH, with repulsive forces large enough to arrange them in an ordered array prior to the evaporation of interstitial fluids. The investigation of fossil shells replaced by opal-A reveals clues for the understanding of structural and chemical reorganization mechanisms behind silica pseudomorphism. Fundamental knowledge about the highly selective replacement process is absent so far, impeding an adequate interpretation of the observations. The replacement of calcitic shells by amorphous silica spheres (~300 nm in size) is a unique example for the transformation of an ionic to a photonic crystal accompanied by a large size contrast of ions and spheres, respectively, but preserving lattice planes. The observed replication of polysynthetic twinning and cleavage planes of calcite by opal-A spheres indicates that silicification occurs via dissolution of shell material and immediate precipitation of amorphous silica. This follows the interface-coupled dissolution-precipitation mechanism model (Putnis and Putnis, 2007), but requires some modification to allow for open space necessary to form spheres in the 100s-nm size range with a core-shell structure. While sphere growth by a gravitational ordering process is implausible, we assume that the ordered array of monodisperse spheres forms via layer-by-layer deposition. References: Putnis A. and Putnis C.V. (2007), J. Solid State Chem., 180, 1783-1786

Friction and Environmental Sensitivity of Molybdenum Disulfide: Effects of Microstructure

NASA Astrophysics Data System (ADS)

Curry, John F.

For nearly a century, molybdenum disulfide has been employed as a solid lubricant to reduce the friction and wear between surfaces. MoS2 is in a class of unique materials, transition metal dichalcogens (TMDC), that have a single crystal structure forming lamellae that interact via weak van der Waals forces. This dissertation focuses on the link between the microstructure of MoS2 and the energetics of running film formation to reduce friction, and effects of environmental sensitivities on performance. Nitrogen impinged MoS2 films are utilized as a comparator to amorphous PVD deposited MoS2 in many of the studies due to the highly ordered surface parallel basal texture of sprayed films. Comparisons showed that films with a highly ordered structure can reduce high friction behavior during run-in. It is thought that shear induced reorientation of amorphous films contributes to typically high initial friction during run-in. In addition to a reduction in initial friction, highly ordered MoS2 films are shown to be more resistant to penetration from oxidative aging processes. High sensitivity, low-energy ion scattering (HS-LEIS) enabled depth profiles that showed oxidation limited to the first monolayer for ordered films and throughout the depth (4-5 nm) for amorphous films. X-ray photoelectron spectroscopy supported these findings, showing far more oxidation in amorphous films than ordered films. Many of these results show the benefits of a well run-in coating, yet transient increases in initial friction can still be noticed after only 5 - 10 minutes. It was found that the transient return to high initial friction after dwell times past 5 - 10 minutes was not due to adsorbed species such as water, but possibly an effect of basal plane relaxation to a commensurate state. Additional techniques and methods were developed to study the effect of adsorbed water and load on running film formation via spiral orbit XRD studies. Spiral orbit experiments enabled large enough worn areas for study in the XRD. Diffraction patterns for sputtered coatings at high loads (1N) showed more intense signals for surface parallel basal plane representation than lower loads (100mN). Tests run in dry and humid nitrogen (20% RH), however, showed no differences in reorientation of basal planes. Microstructure was found to be an important factor in determining the tribological performance of MoS2 films in a variety of testing conditions and environments. These findings will be useful in developing a mechanistic framework that better understands the energetics of running film formation and how different environments play a role.

New approach for extraction of cellulose from tucumã's endocarp and its structural characterization

NASA Astrophysics Data System (ADS)

Manzato, L.; Rabelo, L. C. A.; de Souza, S. M.; da Silva, C. G.; Sanches, E. A.; Rabelo, D.; Mariuba, L. A. M.; Simonsen, J.

2017-09-01

The recycling of plant wasted materials into useful products represents a green alternative to prevent environmental problems. Tucumã palm fruit (Astrocaryum aculeatum Meyer) is widely used in Amazon region for food and crafts. Due to the large amount of wasted Tucumã's endocarp, this work proposes a new approach for extraction of cellulose and its structural characterization. X-ray Diffraction (XRD), Rietveld Refinement, Scanning Electron Microscopy (SEM), Infrared-transform Fourier Spectroscopy (FTIR) and Thermal Analysis (TG/DSC) have been used for characterization of the extracted cellulose. XRD patterns of the in natura tucumã's endocarp has showed a natural crystalline content embedded in a non-crystalline matrix. Nanocrystals of cellulose have been observed in the XRD pattern of the extracted cellulose, showing a good agreement with type II. Rietveld refinement allowed the cell parameters obtainment (a = 8.43(1) Å, b = 9.50(1) Å, c = 9.39(3) Å and γ = 118.43(4)°). Apparent average crystallite size and microstrain were, respectively, 20.0 Å and 0.1%. Two different methods were applied for estimative of crystallinity percentage. In the first method the height ratio between the intensity of the crystalline peak and the total intensity after the subtraction of the non-crystalline content was applied, leading to 48.5%. The second approach was performed using the amorphous area and the total area of the (1 1 0) peak from the experimental diffractogram, leading to 31.5%. The difference in crystallinity percentage concerning these two used approaches may be explained due to the first method does not consider the broad peaks resulted from nanocrystals diffraction. FTIR spectroscopy has evidenced a cellulose type II structure. SEM images showed micrometric sized fibers with ranged thicknesses. However, a new morphology of spherical nanostructures was observed on the type II matrix fibers. Thermal analysis suggests that the extracted cellulose have low thermal stability, which resulted from poor ordered, packed chains. A large exothermic band was found in DSC curve and associated to the release of energy from the amorphous phase degradation. Thus, this work successfully extracted cellulose from tucumã's endocarp and allowed its structural, morphological and thermal characterization.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

Corrosion behavior and pitting susceptibility of in-situ Ti-based metallic glass matrix composites in 3.5 wt.% NaCl solutions

NASA Astrophysics Data System (ADS)

Xu, K. K.; Lan, A. D.; Yang, H. J.; Han, P. D.; Qiao, J. W.

2017-11-01

The Ti62Zr12V13Cu4Be9, Ti58Zr16V10Cu4Be12, Ti46Zr20V12Cu5Be17, and Ti40Zr24V12Cu5Be19 metallic glass matrix composites (MGMCs) were prepared by copper mould casting. The corrosion resistance and the pitting susceptibility of Ti-based MGMCs were tested on their cross-sectional areas in 3.5 wt.% NaCl solutions by potentiodynamic polarization measurements. The composites with lower Ti contents (Ti40Zr24V12Cu5Be19 and Ti46Zr20V12Cu5Be17) exhibit a low resistance to the chloride induced pitting and local corrosion. The preferential dissolution of amorphous matrix is explained by the high chemical reactivity of beryllium element compared to that of stable dendrites and by the detected lower Ti and V contents. However, fairly good passivity was found in the composite with higher Ti contents (Ti62Zr12V13Cu4Be9). XPS measurements revealed that protective Ti-enriched oxide film was formed on the composite surface, additionally, lower content of beryllium element in amorphous matrix hinder the selective corrosion of amorphous matrix. The assessment of experimental observation leads to a proposed corrosion mechanism involving selective dissolution of amorphous matrix and chloride induced pitting process.

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE PAGES

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin; ...

2018-04-26

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Influence of mechanically-induced dilatation on the shape memory behavior of amorphous polymers at large deformation

NASA Astrophysics Data System (ADS)

Hanzon, Drew W.; Lu, Haibao; Yakacki, Christopher M.; Yu, Kai

2018-01-01

In this study, we explore the influence of mechanically-induced dilatation on the thermomechanical and shape memory behavior of amorphous shape memory polymers (SMPs) at large deformation. The uniaxial tension, glass transition, stress relaxation and free recovery behaviors are examined with different strain levels (up to 340% engineering strain). A multi-branched constitutive model that incorporates dilatational effects on the polymer relaxation time is established and applied to assist in discussions and understand the nonlinear viscoelastic behaviors of SMPs. It is shown that the volumetric dilatation results in an SMP network with lower viscosity, faster relaxation, and lower Tg. The influence of the dilatational effect on the thermomechanical behaviors is significant when the polymers are subject to large deformation or in a high viscosity state. The dilation also increases the free recovery rate of SMP at a given recovery temperature. Even though the tested SMPs are far beyond their linear viscoelastic region when a large programming strain is applied, the free recovery behavior still follows the time-temperature superposition (TTSP) if the dilatational effect is considered during the transformation of time scales; however, if the programming strain is different, TTSP fails in predicting the recovery behavior of SMPs because the network has different entropy state and driving force during shape recovery. Since most soft active polymers are subject to large deformation in practice, this study provides a theoretical basis to better understand their nonlinear viscoelastic behaviors, and optimize their performance in engineering applications.

Phase transformations in amorphous fullerite C60 under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Borisova, P. A.; Blanter, M. S.; Brazhkin, V. V.; Somenkov, V. A.; Filonenko, V. P.

2015-08-01

First phase transformations of amorphous fullerite C60 at high temperatures (up to 1800 K) and high pressures (up to 8 GPa) have been investigated and compared with the previous studies on the crystalline fullerite. The study was conducted using neutron diffraction and Raman spectroscopy. The amorphous fullerite was obtained by ball-milling. We have shown that under thermobaric treatment no crystallization of amorphous fullerite into С60 molecular modification is observed, and it transforms into amorphous-like or crystalline graphite. A kinetic diagram of phase transformation of amorphous fullerite in temperature-pressure coordinates was constructed for the first time. Unlike in crystalline fullerite, no crystalline polymerized phases were formed under thermobaric treatment on amorphous fullerite. We found that amorphous fullerite turned out to be less resistant to thermobaric treatment, and amorphous-like or crystalline graphite were formed at lower temperatures than in crystalline fullerite.

Mitigating mechanical failure of crystalline silicon electrodes for lithium batteries by morphological design [Morphological design of silicon electrode with anisotropic interface reaction rate for lithium ion batteries

DOE PAGES

An, Yonghao; Wood, Brandon C.; Ye, Jianchao; ...

2015-06-08

Although crystalline silicon (c-Si) anodes promise very high energy densities in Li-ion batteries, their practical use is complicated by amorphization, large volume expansion and severe plastic deformation upon lithium insertion. Recent experiments have revealed the existence of a sharp interface between crystalline Si (c-Si) and the amorphous Li xSi alloy during lithiation, which propagates with a velocity that is orientation dependent; the resulting anisotropic swelling generates substantial strain concentrations that initiate cracks even in nanostructured Si. Here we describe a novel strategy to mitigate lithiation-induced fracture by using pristine c-Si structures with engineered anisometric morphologies that are deliberately designed tomore » counteract the anisotropy in the crystalline/amorphous interface velocity. This produces a much more uniform volume expansion, significantly reducing strain concentration. Based on a new, validated methodology that improves previous models of anisotropic swelling of c-Si, we propose optimal morphological designs for c-Si pillars and particles. The advantages of the new morphologies are clearly demonstrated by mesoscale simulations and verified by experiments on engineered c-Si micropillars. The results of this study illustrate that morphological design is effective in improving the fracture resistance of micron-sized Si electrodes, which will facilitate their practical application in next-generation Li-ion batteries. In conclusion, the model and design approach present in this paper also have general implications for the study and mitigation of mechanical failure of electrode materials that undergo large anisotropic volume change upon ion insertion and extraction.« less

Applying the Collective Causal Mapping Methodology to Operations Management Curriculum Development

ERIC Educational Resources Information Center

Hays, Julie M.; Bouzdine-Chameeva, Tatiana; Goldstein, Susan Meyer; Hill, Arthur V.; Scavarda, Annibal José

2007-01-01

Although the field of operations management has come a long way since its beginnings in scientific management, the field still appears somewhat amorphous and unstructured to many. Introductory operations management textbooks usually include a number of largely disjointed topics, which leave many students (and their instructors) without a coherent…

Drumming against the Quiet: The Sounds of Asian American Identity in an Amorphous Landscape

ERIC Educational Resources Information Center

Powell, Kimberly

2008-01-01

Drawing largely from the realm of performance theory, critical race theory, and Asian American studies, the author examines the ways in which performance, performativity, and the cooptation of aesthetic forms constitute and disrupt racial identity categories. In this article, the author focuses on the growing contemporary artistic practice of…

Molecular Sensing by Nanoporous Crystalline Polymers

PubMed Central

Pilla, Pierluigi; Cusano, Andrea; Cutolo, Antonello; Giordano, Michele; Mensitieri, Giuseppe; Rizzo, Paola; Sanguigno, Luigi; Venditto, Vincenzo; Guerra, Gaetano

2009-01-01

Chemical sensors are generally based on the integration of suitable sensitive layers and transducing mechanisms. Although inorganic porous materials can be effective, there is significant interest in the use of polymeric materials because of their easy fabrication process, lower costs and mechanical flexibility. However, porous polymeric absorbents are generally amorphous and hence present poor molecular selectivity and undesired changes of mechanical properties as a consequence of large analyte uptake. In this contribution the structure, properties and some possible applications of sensing polymeric films based on nanoporous crystalline phases, which exhibit all identical nanopores, will be reviewed. The main advantages of crystalline nanoporous polymeric materials with respect to their amorphous counterparts are, besides a higher selectivity, the ability to maintain their physical state as well as geometry, even after large guest uptake (up to 10–15 wt%), and the possibility to control guest diffusivity by controlling the orientation of the host polymeric crystalline phase. The final section of the review also describes the ability of suitable polymeric films to act as chirality sensors, i.e., to sense and memorize the presence of non-racemic volatile organic compounds. PMID:22303150

Conductive tracks of 30-MeV C60 clusters in doped and undoped tetrahedral amorphous carbon

NASA Astrophysics Data System (ADS)

Krauser, J.; Gehrke, H.-G.; Hofsäss, H.; Trautmann, C.; Weidinger, A.

2013-07-01

In insulating tetrahedral amorphous carbon (ta-C), the irradiation with 30-MeV C60 cluster ions leads to the formation of well conducting tracks. While electrical currents through individual tracks produced with monoatomic projectiles (e.g. Au or U) often exhibit rather large track to track fluctuations, C60 clusters are shown to generate highly conducting tracks with very narrow current distributions. Additionally, all recorded current-voltage curves show linear characteristics. These findings are attributed to the large specific energy loss dE/dx of the 30-MeV C60 clusters. We also investigated C60 tracks in ta-C films which were slightly doped with B, N or Fe during film growth. Doping apparently increases the ion track conductivity. However, at the same time the insulating characteristics of the pristine ta-C film can be reduced. The present C60 results are compared with data from earlier experiments with monoatomic heavy ion beams. The investigations were performed by means of atomic force microscopy including temperature dependent conductivity measurements of single ion tracks.

In-situ composite formation of damage tolerant coatings utilizing laser

DOEpatents

Blue, Craig A [Knoxville, TN; Wong, Frank [Livermore, CA; Aprigliano, Louis F [Berlin, MD; Engleman, Peter G [Knoxville, TN; Peter, William H [Knoxville, TN; Rozgonyi, Tibor G [Golden, CO; Ozdemir, Levent [Golden, CO

2011-05-10

A coating steel component with a pattern of an iron based matrix with crystalline particles metallurgically bound to the surface of a steel substrate for use as disc cutters or other components with one or more abrading surfaces that can experience significant abrasive wear, high point loads, and large shear stresses during use. The coated component contains a pattern of features in the shape of freckles or stripes that are laser formed and fused to the steel substrate. The features can display an inner core that is harder than the steel substrate but generally softer than the matrix surrounding the core, providing toughness and wear resistance to the features. The features result from processing an amorphous alloy where the resulting matrix can be amorphous, partially devitrified or fully devitrified.

In-situ composite formation of damage tolerant coatings utilizing laser

DOEpatents

Blue, Craig A; Wong, Frank; Aprigliano, Louis F; Engleman, Peter G; Rozgonyi, Tibor G; Ozdemir, Levent

2014-03-18

A coating steel component with a pattern of an iron based matrix with crystalline particles metallurgically bound to the surface of a steel substrate for use as disc cutters or other components with one or more abrading surfaces that can experience significant abrasive wear, high point loads, and large shear stresses during use. The coated component contains a pattern of features in the shape of freckles or stripes that are laser formed and fused to the steel substrate. The features can display an inner core that is harder than the steel substrate but generally softer than the matrix surrounding the core, providing toughness and wear resistance to the features. The features result from processing an amorphous alloy where the resulting matrix can be amorphous, partially devitrified or fully devitrified.

A thermally driven differential mutation approach for the structural optimization of large atomic systems

NASA Astrophysics Data System (ADS)

Biswas, Katja

2017-09-01

A computational method is presented which is capable to obtain low lying energy structures of topological amorphous systems. The method merges a differential mutation genetic algorithm with simulated annealing. This is done by incorporating a thermal selection criterion, which makes it possible to reliably obtain low lying minima with just a small population size and is suitable for multimodal structural optimization. The method is tested on the structural optimization of amorphous graphene from unbiased atomic starting configurations. With just a population size of six systems, energetically very low structures are obtained. While each of the structures represents a distinctly different arrangement of the atoms, their properties, such as energy, distribution of rings, radial distribution function, coordination number, and distribution of bond angles, are very similar.

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Application of computational methods to the design and characterisation of porous molecular materials.

PubMed

Evans, Jack D; Jelfs, Kim E; Day, Graeme M; Doonan, Christian J

2017-06-06

Composed from discrete units, porous molecular materials (PMMs) possess unique properties not observed for conventional, extended, solids, such as solution processibility and permanent porosity in the liquid phase. However, identifying the origin of porosity is not a trivial process, especially for amorphous or liquid phases. Furthermore, the assembly of molecular components is typically governed by a subtle balance of weak intermolecular forces that makes structure prediction challenging. Accordingly, in this review we canvass the crucial role of molecular simulations in the characterisation and design of PMMs. We will outline strategies for modelling porosity in crystalline, amorphous and liquid phases and also describe the state-of-the-art methods used for high-throughput screening of large datasets to identify materials that exhibit novel performance characteristics.

In-situ composite formation of damage tolerant coatings utilizing laser

DOEpatents

Blue, Craig A.; Wong, Frank; Aprigliano, Louis F.; Engleman, Peter G.; Peter, William H.; Rozgonyi, Tibor G.; Ozdemir, Levent

2016-05-24

A coating steel component with a pattern of an iron based matrix with crystalline particles metallurgically bound to the surface of a steel substrate for use as disc cutters or other components with one or more abrading surfaces that can experience significant abrasive wear, high point loads, and large shear stresses during use. The coated component contains a pattern of features in the shape of freckles or stripes that are laser formed and fused to the steel substrate. The features can display an inner core that is harder than the steel substrate but generally softer than the matrix surrounding the core, providing toughness and wear resistance to the features. The features result from processing an amorphous alloy where the resulting matrix can be amorphous, partially devitrified or fully devitrified.

In situ observation of shear-driven amorphization in silicon crystals.

PubMed

He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X

2016-10-01

Amorphous materials are used for both structural and functional applications. An amorphous solid usually forms under driven conditions such as melt quenching, irradiation, shock loading or severe mechanical deformation. Such extreme conditions impose significant challenges on the direct observation of the amorphization process. Various experimental techniques have been used to detect how the amorphous phases form, including synchrotron X-ray diffraction, transmission electron microscopy (TEM) and Raman spectroscopy, but a dynamic, atomistic characterization has remained elusive. Here, by using in situ high-resolution TEM (HRTEM), we show the dynamic amorphization process in silicon nanocrystals during mechanical straining on the atomic scale. We find that shear-driven amorphization occurs in a dominant shear band starting with the diamond-cubic (dc) to diamond-hexagonal (dh) phase transition and then proceeds by dislocation nucleation and accumulation in the newly formed dh-Si phase. This process leads to the formation of an amorphous Si (a-Si) band, embedded with dh-Si nanodomains. The amorphization of dc-Si via an intermediate dh-Si phase is a previously unknown pathway of solid-state amorphization.

Electrochemical characteristics of amorphous carbon nanorod synthesized by radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Chang, Hsin-Yueh; Huang, Yung-Jui; Chang, Hsuan-Chen; Su, Wei-Jhih; Shih, Yi-Ting; Chen, John L.; Honda, Shin-ichi; Huang, Ying-Sheng; Lee, Kuei-Yi

2015-01-01

Amorphous carbon nanorods (CNRs) were deposited directly using radio frequency magnetron sputtering. The synthesized CNR electrochemical properties were investigated using graphene as the current collector for an electric double layer capacitor. The CNRs were vertically aligned to the graphene to achieve higher specific surface area. The capacitor performance was characterized using electrochemical impedance spectroscopy, cyclic voltammetry, and galvanostatic charge-discharge testing in 1 M KOH electrolyte at 30°C, 40°C, 50°C, and 60°C. The CNR specific capacitance was observed to increase with increasing measurement temperature and could reach up to 830 F/g at 60°C. Even after extensive measurements, the CNR electrode maintained good adhesion to the graphene current collector thereby suggesting electrode material stability.

Fused Silica Surface Coating for a Flexible Silica Mat Insulation System

NASA Technical Reports Server (NTRS)

Rhodes, W. H.

1973-01-01

Fused silica insulation coatings have been developed for application to a flexible mat insulation system. Based on crystalline phase nucleation and growth kinetics, a 99+% SiO2 glass was selected as the base composition. A coating was developed that incorporated the high emissivity phase NiCr2O4 as a two phase coating with goals of high emittance and minimum change in thermal expansion. A second major coating classification has a plasma sprayed emittance coating over a sealed pure amorphous SiO2 layer. A third area of development centered on extremely thin amorphous SiO2 coatings deposited by chemical vapor deposition. The coating characterization studies presented are mechanical testing of thin specimens extracted from the coatings, cyclic arc exposures, and emittance measurements before and after arc exposures.

Simulation study on heat conduction of a nanoscale phase-change random access memory cell.

PubMed

Kim, Junho; Song, Ki-Bong

2006-11-01

We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 x 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly.

Materials research at Stanford University. [composite materials, crystal structure, acoustics

NASA Technical Reports Server (NTRS)

1975-01-01

Research activity related to the science of materials is described. The following areas are included: elastic and thermal properties of composite materials, acoustic waves and devices, amorphous materials, crystal structure, synthesis of metal-metal bonds, interactions of solids with solutions, electrochemistry, fatigue damage, superconductivity and molecular physics and phase transition kinetics.

Probing crystallinity of never-dried wood cellulose with Raman spectroscopy

Treesearch

Umesh P. Agarwal; Sally A. Ralph; Richard S. Reiner; Carlos Baez

2016-01-01

The structure of wood cell wall cellulose in its native state remains poorly understood, limiting the progress of research and development in numerous areas, including plant science, biofuels, and nanocellulose based materials. It is generally believed that cellulose in cell wall microfibrils has both crystalline and amorphous regions. However, there is evidence that...

Simulation studies for surfaces and materials strength

NASA Technical Reports Server (NTRS)

Halicioglu, T.

1986-01-01

During this reporting period three investigations were carried out. The first area of research concerned the analysis of the structure-energy relationship in small clusters. This study is very closely related to the improvement of the potential energy functions which are suitable and simple enough to be used in atomistic simulation studies. Parameters obtained from ab initio calculations for dimers and trimers of Al were used to estimate energetics and global minimum energy structures of clusters continuing up to 15 Al atoms. The second research topic addressed modeling of the collision process for atoms impinging on surfaces. In this simulation study qualitative aspects of the O atom collision with a graphite surface were analyzed. Four different O/graphite systems were considered and the aftermath of the impact was analyzed. The final area of investigation was related to the simulation of thin amorphous Si films on crystalline Si substrates. Parameters obtained in an earlier study were used to model an exposed amorphous Si surface and an a-Si/c-Si interface. Structural details for various film thicknesses were investigated at an atomistic level.

Biomineral nanoparticles are space-filling

NASA Astrophysics Data System (ADS)

Yang, Li; Killian, Christopher E.; Kunz, Martin; Tamura, Nobumichi; Gilbert, P. U. P. A.

2011-02-01

Sea urchin biominerals have been shown to form from aggregating nanoparticles of amorphous calcium carbonate (ACC), which then crystallize into macroscopic single crystals of calcite. Here we measure the surface areas of these biominerals and find them to be comparable to those of space-filling macroscopic geologic calcite crystals. These biominerals differ from synthetic mesocrystals, which are invariably porous. We propose that space-filling ACC is the structural precursor for echinoderm biominerals.Sea urchin biominerals have been shown to form from aggregating nanoparticles of amorphous calcium carbonate (ACC), which then crystallize into macroscopic single crystals of calcite. Here we measure the surface areas of these biominerals and find them to be comparable to those of space-filling macroscopic geologic calcite crystals. These biominerals differ from synthetic mesocrystals, which are invariably porous. We propose that space-filling ACC is the structural precursor for echinoderm biominerals. This article was submitted as part of a Themed Issue on Crystallization and Formation Mechanisms of Nanostructures. Other papers on this topic can be found in issue 11 of vol. 2 (2010). This issue can be found from the Nanoscale homepage [http://www.rsc.org/nanoscale

Self-organization of a periodic structure between amorphous and crystalline phases in a GeTe thin film induced by femtosecond laser pulse amorphization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katsumata, Y.; Morita, T.; Morimoto, Y.

A self-organized fringe pattern in a single amorphous mark of a GeTe thin film was formed by multiple femtosecond pulse amorphization. Micro Raman measurement indicates that the fringe is a periodic alternation between crystalline and amorphous phases. The period of the fringe is smaller than the irradiation wavelength and the direction is parallel to the polarization direction. Snapshot observation revealed that the fringe pattern manifests itself via a complex but coherent process, which is attributed to crystallization properties unique to a nonthermally amorphized phase and the distinct optical contrast between crystalline and amorphous phases.

Nanostructures having crystalline and amorphous phases

DOEpatents

Mao, Samuel S; Chen, Xiaobo

2015-04-28

The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

Femtosecond laser pulse modification of amorphous silicon films: control of surface anisotropy

NASA Astrophysics Data System (ADS)

Shuleiko, D. V.; Potemkin, F. V.; Romanov, I. A.; Parhomenko, I. N.; Pavlikov, A. V.; Presnov, D. E.; Zabotnov, S. V.; Kazanskii, A. G.; Kashkarov, P. K.

2018-05-01

A one-dimensional surface relief with a 1.20  ±  0.02 µm period was formed in amorphous hydrogenated silicon films as a result of irradiation by femtosecond laser pulses (1.25 µm) with a fluence of 0.15 J cm‑2. Orientation of the formed structures was determined by the polarization vector of the radiation and the number of acting pulses. Nanocrystalline silicon phases with volume fractions from 40 to 67% were detected in the irradiated films according to the analysis of Raman spectra. Observed micro- and nanostructuring processes were caused by surface plasmon–polariton excitation and near-surface region nanocrystallization, respectively, in the high-intensity femtosecond laser field. Furthermore, the formation of Si-III and Si-XII silicon polymorphous modifications was observed after laser treatment with a large exposure dose. The conductivity of the film increased by three orders of magnitude at proper conditions after femtosecond laser nanocrystallization compared to the conductivity of the untreated amorphous surface. The conductivity anisotropy of the irradiated regions was also observed due to the depolarizing contribution of the surface structure, and the non-uniform intensity distribution in the cross-section of the laser beam used for modification.

Laboratory Measurements of Celestial Solids

NASA Technical Reports Server (NTRS)

Sievers, A. J.; Beckwith, S. V. W.

1997-01-01

Our experimental study has focused on laboratory measurements of the low temperature optical properties of a variety of astronomically significant materials in the infrared and mm-wave region of the spectrum. Our far infrared measurements of silicate grains with an open structure have produced a variety of unusual results: (1) the low temperature mass opacity coefficient of small amorphous 2MgO(central dot)SiO2 and MgO(central dot)2SiO2 grains are many times larger than the values previously used for interstellar grain material; (2) all of the amorphous silicate grains studied possess the characteristic temperature dependent signature associated with two level systems in bulk glass; and (3) a smaller but nonzero two level temperature dependence signature is also observed for crystalline particles, its physical origin is unclear. These laboratory measurements yield surprisingly large and variable values for the mm-wave absorption coefficients of small silicate particles similar to interstellar grains, and suggest that the bulk absorptivity of interstellar dust at these long wavelengths will not be well known without such studies. Furthermore, our studies have been useful to better understand the physics of the two level absorption process in amorphous and crystalline grains to gain confidence in the wide applicability of these results.

Solubility and dissolution performances of spray-dried solid dispersion of Efavirenz in Soluplus.

PubMed

Lavra, Zênia Maria Maciel; Pereira de Santana, Davi; Ré, Maria Inês

2017-01-01

Efavirenz (EFV), a first-line anti-HIV drug largely used as part of antiretroviral therapies, is practically insoluble in water and belongs to BCS class II (low solubility/high permeability). The aim of this study was to improve the solubility and dissolution performances of EFV by formulating an amorphous solid dispersion of the drug in polyvinyl caprolactam-polyvinyl acetate-polyethylene glycol graft copolymer (Soluplus ® ) using spray-drying technique. To this purpose, spray-dried dispersions of EFV in Soluplus ® at different mass ratios (1:1.25, 1:7, 1:10) were prepared and characterized using particle size measurements, SEM, XRD, DSC, FTIR and Raman microscopy mapping. Solubility and dissolution were determined in different media. Stability was studied at accelerated conditions (40 °C/75% RH) and ambient conditions for 12 months. DSC and XRD analyses confirmed the EFV amorphous state. FTIR spectroscopy analyses revealed possible drug-polymer molecular interaction. Solubility and dissolution rate of EFV was enhanced remarkably in the developed spray-dried solid dispersions, as a function of the polymer concentration. Spray-drying was concluded to be a proper technique to formulate a physically stable dispersion of amorphous EFV in Soluplus ® , when protected from moisture.

Compositional dependence of defect mobility and damage buildup in Al xGa 1- xAs

NASA Astrophysics Data System (ADS)

Stonert, A.; Turos, A.; Nowicki, L.; Breeger, B.; Wendler, E.; Wesch, W.

2001-04-01

Defect transformations at low temperatures in ion implanted Al xGa 1- xAs (0⩽ x⩽1) ternary compounds were studied. Experiments consisted of ion implantation with 150 keV N or 200 keV Ar ions with different doses at temperatures between 18 and 77 K, and in situ RBS/channeling measurements at selected temperatures. An important recovery stage attributed to the defect mobility in the Ga(Al) sublattice was revealed near 280 K. For x>0.5 this stage was largely suppressed. Instead, a continuous damage recovery at low temperatures was observed. It was noticed that defect recombination can also be produced upon prolonged storage at the implantation temperature. For AlAs ( x=1) the 280 K stage disappeared completely and only a small defect recovery at low temperatures was noticed. Upon N- or Ar-ion bombardment, after an incubation period, a sharp crystalline-to-amorphous transition appeared. The amorphization dose increases with increasing x and is a factor of 10 higher for x=0.96 than that for x=0. A further increase of the dose by a factor of 15 was required to amorphize AlAs ( x=1).

Stress-relaxation heat treatment in FeSiBNb amorphous alloy: Thermal, microstructure, nanomechanical and magnetic texture measurements

NASA Astrophysics Data System (ADS)

Lashgari, H. R.; Cadogan, J. M.; Kong, C.; Tang, C.; Doherty, C.; Chu, D.; Li, S.

2018-06-01

In the present study, the effect of stress-relaxation treatment (Tstress-relaxation < Tglass transition) on the magnetic texture, nanomechanical properties, and variation of free-volume in FeSiBNb amorphous alloy was investigated using Mössbauer spectroscopy, nanoindentation, dynamic mechanical analysis (DMA), and positron annihilation lifetime spectroscopy (PALS) techniques. It was shown that stress-relaxation treatment slightly improved the magnetic texture by 6% at T ≪Tg due to small-scale displacement of atoms whereas the magnetic texture was deteriorated due to thermal treatment at temperatures around the glass transition point (large-scale displacement of atoms). According to nanoindentation results, the hardness (H) and reduced modulus (Er) of the amorphous ribbon increased by 15% and 13%, respectively, after stress-relaxation treatment at 716 K for 5 min. Increasing the stress-relaxation time from 5 min to 60 min at 716 K resulted in decreases in the hardness and reduced modulus which are attributed to the increase of free-volume defects (increase of τ2 lifetime measured by PALS). Transmission electron microscopy (TEM) showed the formation of extremely fine embryos of α-Fe (3-5 nm in size) after stress-relaxation treatment.

Structural analysis of ion-implanted chemical-vapor-deposited diamond by transmission electron microscope

NASA Astrophysics Data System (ADS)

Jiang, N.; Deguchi, M.; Wang, C. L.; Won, J. H.; Jeon, H. M.; Mori, Y.; Hatta, A.; Kitabatake, M.; Ito, T.; Hirao, T.; Sasaki, T.; Hiraki, A.

1997-04-01

A transmission electron microscope (TEM) study of ion-implanted chemical-vapor-deposited (CVD) diamond is presented. CVD diamond used for transmission electron microscope observation was directly deposited onto Mo TEM grids. As-deposited specimens were irradiated by C (100 keV) ions at room temperature with a wide range of implantation doses (10 12-10 17/cm 2). Transmission electron diffraction (TED) patterns indicate that there exists a critical dose ( Dc) for the onset of amorphization of CVD diamond as a result of ion induced damage and the value of critical dose is confirmed to be about 3 × 10 15/cm 2. The ion-induced transformation process is clearly revealed by high resolution electron microscope (HREM) images. For a higher dose implantation (7 × 10 15/cm 2) a large amount of diamond phase is transformed into amorphous carbon and many tiny misoriented diamond blocks are found to be left in the amorphous solid. The average size of these misoriented diamond blocks is only about 1-2 nm. Further bombardment (10 17/cm 2) almost kills all of the diamond phase within the irradiated volume and moreover leads to local formation of micropolycrystalline graphite.

Understanding API-polymer proximities in amorphous stabilized composite drug products using fluorine-carbon 2D HETCOR solid-state NMR.

PubMed

Abraham, Anuji; Crull, George

2014-10-06

A simple and robust method for obtaining fluorine-carbon proximities was established using a (19)F-(13)C heteronuclear correlation (HETCOR) two-dimensional (2D) solid-state nuclear magnetic resonance (ssNMR) experiment under magic-angle spinning (MAS). The method was applied to study a crystalline active pharmaceutical ingredient (API), avagacestat, containing two types of fluorine atoms and its API-polymer composite drug product. These results provide insight into the molecular structure, aid with assigning the carbon resonances, and probe API-polymer proximities in amorphous spray dried dispersions (SDD). This method has an advantage over the commonly used (1)H-(13)C HETCOR because of the large chemical shift dispersion in the fluorine dimension. In the present study, fluorine-carbon distances up to 8 Å were probed, giving insight into the API structure, crystal packing, and assignments. Most importantly, the study demonstrates a method for probing an intimate molecular level contact between an amorphous API and a polymer in an SDD, giving insights into molecular association and understanding of the role of the polymer in API stability (such as recrystallization, degradation, etc.) in such novel composite drug products.

Investigation of the Atypical Glass Transition and Recrystallization Behavior of Amorphous Prazosin Salts

PubMed Central

Kumar, Lokesh; Popat, Dharmesh; Bansal, Arvind K.

2011-01-01

This manuscript studied the effect of counterion on the glass transition and recrystallization behavior of amorphous salts of prazosin. Three amorphous salts of prazosin, namely, prazosin hydrochloride, prazosin mesylate and prazosin tosylate were prepared by spray drying, and characterized by optical-polarized microscopy, differential scanning calorimetry and powder X-ray diffraction. Modulated differential scanning calorimetry was used to determine the glass transition and recrystallization temperature of amorphous salts. Glass transition of amorphous salts followed the order: prazosin mesylate > prazosin tosylate ∼ prazosin hydrochloride. Amorphous prazosin mesylate and prazosin tosylate showed glass transition, followed by recrystallization. In contrast, amorphous prazosin hydrochloride showed glass transition and recrystallization simultaneously. Density Functional Theory, however, suggested the expected order of glass transition as prazosin hydrochloride > prazosin mesylate > prazosin tosylate. The counterintuitive observation of amorphous prazosin hydrochloride having lower glass transition was explained in terms of its lower activation energy (206.1 kJ/mol) for molecular mobility at Tg, compared to that for amorphous prazosin mesylate (448.5 kJ/mol) and prazosin tosylate (490.7 kJ/mol), and was further correlated to a difference in hydrogen bonding strength of the amorphous and the corresponding recrystallized salts. This study has implications in selection of an optimal amorphous salt form for pharmaceutical development. PMID:24310595

Investigation of the atypical glass transition and recrystallization behavior of amorphous prazosin salts.

PubMed

Kumar, Lokesh; Popat, Dharmesh; Bansal, Arvind K

2011-08-25

This manuscript studied the effect of counterion on the glass transition and recrystallization behavior of amorphous salts of prazosin. Three amorphous salts of prazosin, namely, prazosin hydrochloride, prazosin mesylate and prazosin tosylate were prepared by spray drying, and characterized by optical-polarized microscopy, differential scanning calorimetry and powder X-ray diffraction. Modulated differential scanning calorimetry was used to determine the glass transition and recrystallization temperature of amorphous salts. Glass transition of amorphous salts followed the order: prazosin mesylate > prazosin tosylate ~ prazosin hydrochloride. Amorphous prazosin mesylate and prazosin tosylate showed glass transition, followed by recrystallization. In contrast, amorphous prazosin hydrochloride showed glass transition and recrystallization simultaneously. Density Functional Theory, however, suggested the expected order of glass transition as prazosin hydrochloride > prazosin mesylate > prazosin tosylate. The counterintuitive observation of amorphous prazosin hydrochloride having lower glass transition was explained in terms of its lower activation energy (206.1 kJ/mol) for molecular mobility at Tg, compared to that for amorphous prazosin mesylate (448.5 kJ/mol) and prazosin tosylate (490.7 kJ/mol), and was further correlated to a difference in hydrogen bonding strength of the amorphous and the corresponding recrystallized salts. This study has implications in selection of an optimal amorphous salt form for pharmaceutical development.

Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Min-Jung; Lee, Tae Il; Park, Jee Ho; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Baik, Hong Koo; Lee, Woong; Myoung, Jae-Min

2012-05-01

The structure of thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) was modified by spin coating a suspension of In2O3 nanoparticles on a SiO2/p++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In2O3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In2O3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO)n ordering assisted by increased In concentration in the amorphous channel layer.

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

NASA Technical Reports Server (NTRS)

Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

2007-01-01

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Facile synthesis of amorphous FeOOH/MnO2 composites as screen-printed electrode materials for all-printed solid-state flexible supercapacitors

NASA Astrophysics Data System (ADS)

Lu, Qiang; Liu, Li; Yang, Shuanglei; Liu, Jun; Tian, Qingyong; Yao, Weijing; Xue, Qingwen; Li, Mengxiao; Wu, Wei

2017-09-01

More convenience and intelligence life lead by flexible/wearable electronics requires innovation and hommization of power sources. Here, amorphous FeOOH/MnO2 composite as screen-printed electrode materials for supercapacitors (SCs) is synthesized by a facile method, and solid-state flexible SCs with aesthetic design are fabricated by fully screen-printed process on different substrates, including PET, paper and textile. The amorphous FeOOH/MnO2 composite shows a high specific capacitance and a good rate capability (350.2 F g-1 at a current density of 0.5 A g-1 and 159.5 F g-1 at 20 A g-1). It also possesses 95.6% capacitance retention even after 10 000 cycles. Moreover, the all-printed solid-state flexible SC device exhibits a high area specific capacitance of 5.7 mF cm-2 and 80% capacitance retention even after 2000 cycles. It also shows high mechanical flexibility. Simultaneously, these printed SCs on different substrates in series are capable to light up a 1.9 V yellow light emitting diode (LED), even after bending and stretching.

Method of inducing differential etch rates in glow discharge produced amorphous silicon

DOEpatents

Staebler, David L.; Zanzucchi, Peter J.

1980-01-01

A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.

Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock

NASA Astrophysics Data System (ADS)

Kaskel, Stefan; Khanna, Meikh; Zibrowius, Bodo; Schmidt, Hans-Werner; Ullner, Dirk

2004-01-01

The use of amorphous high surface area silicon nitride is proposed as a raw material for crystallization experiments in supercritical ammonia. Compared with earlier studies, the use of highly dispersed solids results in the crystallization of inorganic nitrides under relatively mild conditions (673 K). Mineralizers such as amides (LiNH 2, NaNH 2, KNH 2) are found to be effective crystallization aids. The crystalline products, detected using powder X-ray diffraction, are either MSi 2N 3 (M=Li, Na) or Si 2N 2NH. Si 2N 2NH is also characterized using 29Si MAS NMR. The spectrum shows a narrow line located at -44.7 ppm, whereas for amorphous silicon nitride-based materials the line is broad. The ammonothermal reaction of NaAl(NH 2) 4 and high surface area silicon nitride at 673 K affords a new orthorhombic phase, isostructural with NaSi 2N 3, but with extended lattice constants ( a=9.634, b=5.643, c=5.011 Å). Effective crystallization is also achieved using fluoride mineralizers (KF, CsF) at 673 K. A new small scale autoclave, suitable for laboratory syntheses at temperatures up to 873 K, is presented that can be loaded under inert gas.

Nanoporous activated carbon derived from Lapsi (Choerospondias axillaris) seed stone for the removal of arsenic from water.

PubMed

Rajbhandari, Rinita; Shrestha, Lok Kumar; Pradhananga, Raja Ram

2012-09-01

Activated carbons were prepared from Lapsi (Choerospondias axillaris) seed stone by zinc chloride (ZnCl2) activation at three different Lapsi seed powder (LSP):ZnCl2 ratios: 1:0.5 (AC-0.5), 1:1 (AC-1), and 1:2 (AC-2). The properties of these activated carbons (ACs), including effective surface areas, pore volumes, and pore size distributions were characterized from N2 adsorption-desorption isotherms. The ACs obtained were essentially nanoporous (including both micro- and mesoporous) with effective surface area ranging from 1167 to 1328 m2/g. Fourier-transform infrared (FTIR) spectroscopy showed the presence of functional groups on the surface of ACs. Scanning electron microscopy (SEM) images showed a high pore development in the ACs. X-ray diffraction (XRD) patterns showed that, in addition to the amorphous structure, ACs contains crystalline ZnO formed during the carbonization. Presence of amorphous carbon is further confirmed by Raman scattering, where we observed only D and G bands. Iron impregnated nanoporous AC has been found to be very effective for arsenic removal from ground water; amount of arsenic is decreased from ca. 200 ppb to 10 ppb. These experimental results indicate the potential use of Lapsi seed as a precursor material for the preparation of high surface area nanoporous activated carbons.

Synthesis and characterization of amorphous yttrium oxide layers by metal organic chemical solution deposition

NASA Astrophysics Data System (ADS)

Martynova, I.; Tsymbarenko, D.; Kamenev, A.; Kuzmina, N.; Kaul, A.

2014-02-01

The Solution Deposition Planarization method was successfully used for smoothing Ni-alloy tapes with initial surface roughness of 26.7 nm (on 40×40 μm2 area) and 12.6 nm (on 5×5 μm2 area). New precursor solutions were prepared from yttrium acetate and diethylenetriamine or ethylenediamine in MeOH and i-PrOH-alcohols with different viscosities. Using those solutions yttria films with the residual roughness Sa=0.4 nm (on 5×5 μm2 area) and Sa=7.6 nm (on 40×40 μm2 area) were deposited on the Ni-alloy tapes.

Amorphization and nanocrystallization of silcon under shock compression

DOE PAGES

Remington, B. A.; Wehrenberg, C. E.; Zhao, S.; ...

2015-11-06

High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon unveiled remarkable structural changes above a pressure threshold. Two distinct amorphous regions were identified: (a) a bulk amorphous layer close to the surface and (b) amorphous bands initially aligned with {111} slip planes. Further increase of the laser energy leads to the re-crystallization of amorphous silicon into nanocrystals with high concentration of nano-twins. This amorphization is produced by the combined effect of high magnitude hydrostatic and shear stresses under dynamic shock compression. Shock-induced defects play a very important role in the onset of amorphization. Calculations of the free energymore » changes with pressure and shear, using the Patel-Cohen methodology, are in agreement with the experimental results. Molecular dynamics simulation corroborates the amorphization, showing that it is initiated by the nucleation and propagation of partial dislocations. As a result, the nucleation of amorphization is analyzed qualitatively by classical nucleation theory.« less

Imprinting bulk amorphous alloy at room temperature

DOE PAGES

Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; ...

2015-11-13

We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the abilitymore » of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.« less

Characterization of melt-quenched and milled amorphous solids of gatifloxacin.

PubMed

Hattori, Yusuke; Suzuki, Ayumi; Otsuka, Makoto

2016-11-01

The objectives of this study were to characterize and investigate the differences in amorphous states of gatifloxacin. We prepared two types of gatifloxacin amorphous solids coded as M and MQ using milling and melt-quenching methods, respectively. The amorphous solids were characterized via X-ray diffraction (XRD), nonisothermal differential scanning calorimetry (DSC) and time-resolved near-infrared (NIR) spectroscopy. Both the solids displayed halo XRD patterns, the characteristic of amorphous solids; however, in the non-isothermal DSC profiles, these amorphous solids were distinguished by their crystallization and melting temperatures. The Kissinger-Akahira-Sunose plots of non-isothermal crystallization temperatures at various heating rates indicated a lower activation energy of crystallization for the amorphous solid M than that of MQ. These results support the differentiation between two amorphous states with different physical and chemical properties.

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

DOEpatents

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Amorphization reaction in thin films of elemental Cu and Y

NASA Astrophysics Data System (ADS)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

Amorphous Mixed-Metal Oxide Thin Films from Aqueous Solution Precursors with Near-Atomic Smoothness.

PubMed

Kast, Matthew G; Cochran, Elizabeth A; Enman, Lisa J; Mitchson, Gavin; Ditto, Jeffrey; Siefe, Chris; Plassmeyer, Paul N; Greenaway, Ann L; Johnson, David C; Page, Catherine J; Boettcher, Shannon W

2016-12-28

Thin films with tunable and homogeneous composition are required for many applications. We report the synthesis and characterization of a new class of compositionally homogeneous thin films that are amorphous solid solutions of Al 2 O 3 and transition metal oxides (TMO x ) including VO x , CrO x , MnO x , Fe 2 O 3 , CoO x , NiO, CuO x , and ZnO. The synthesis is enabled by the rapid decomposition of molecular transition-metal nitrates TM(NO 3 ) x at low temperature along with precondensed oligomeric Al(OH) x (NO 3 ) 3-x cluster species, both of which can be processed from aq solution. The films are dense, ultrasmooth (R rms < 1 nm, near 0.1 nm in many cases), and atomically mixed amorphous metal-oxide alloys over a large composition range. We assess the chemical principles that favor the formation of amorphous homogeneous films over rougher phase-segregated nanocrystalline films. The synthesis is easily extended to other compositions of transition and main-group metal oxides. To demonstrate versatility, we synthesized amorphous V 0.1 Cr 0.1 Mn 0.1 Fe 0.1 Zn 0.1 Al 0.5 O x and V 0.2 Cr 0.2 Fe 0.2 Al 0.4 O x with R rms ≈ 0.1 nm and uniform composition. The combination of ideal physical properties (dense, smooth, uniform) and broad composition tunability provides a platform for film synthesis that can be used to study fundamental phenomena when the effects of transition metal cation identity, solid-state concentration of d-electrons or d-states, and/or crystallinity need to be controlled. The new platform has broad potential use in controlling interfacial phenomena such as electron transfer in solar-cell contacts or surface reactivity in heterogeneous catalysis.

Carbon-silicon composite anode electrodes modified with MWCNT for high energy battery applications

NASA Astrophysics Data System (ADS)

Akbulut, H.; Nalci, D.; Guler, A.; Duman, S.; Guler, M. O.

2018-07-01

In this study, we comparatively study the electrochemical characteristics of Si, Si-C and vacuum-assisted filtration fabrication of a novel free-standing Si@C/Mutli Wall Carbon Nanotubes (MWCNT) nanocomposite. The surfaces of the as-received Si nanaoparticles were coated with an amorphous carbon layer and homogenously anchored onto the surfaces of as-received MWCNTs by a simple vacuum filtration method. The samples were then analyzed with field emission scanning electron microscopy and X-ray diffraction (XRD) methods. Si@C/MWCNT samples have shown a stable capacity of 1290 mA h g-1 after 200 cycles. The results have proven that MWCNT's large surface area, highly conductive network which can provide good contact between Si@C nanoparticles, tolerating large volume change sand suppressing aggregation of Si@C nanoparticles during charge/discharge processes. Such a comparison between the performances of carbon-MWCNT-metal materials is reasonably envisaged not only to be useful for understanding the individual contribution from MWCNT and metal but also to form a fundamental basis for energy storage applications. Free-standing Si-C/MWCNT nano paper has been successfully obtained by a facile vacuum filtration method.

Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice.

PubMed

Lin, Chuanlong; Yong, Xue; Tse, John S; Smith, Jesse S; Sinogeikin, Stanislav V; Kenney-Benson, Curtis; Shen, Guoyin

2017-09-29

We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transition to low-density amorphous ice at 96 K and ∼1  Pa, to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.

Fast surface crystallization of amorphous griseofulvin below T g.

PubMed

Zhu, Lei; Jona, Janan; Nagapudi, Karthik; Wu, Tian

2010-08-01

To study crystal growth rates of amorphous griseofulvin (GSF) below its glass transition temperature (T (g)) and the effect of surface crystallization on the overall crystallization kinetics of amorphous GSF. Amorphous GSF was generated by melt quenching. Surface and bulk crystal growth rates were determined using polarized light microscope. X-ray powder diffraction (XRPD) and Raman microscopy were used to identify the polymorph of the crystals. Crystallization kinetics of amorphous GSF powder stored at 40 degrees C (T (g)-48 degrees C) and room temperature (T (g)-66 degrees C) was monitored using XRPD. Crystal growth at the surface of amorphous GSF is 10- to 100-fold faster than that in the bulk. The surface crystal growth can be suppressed by an ultrathin gold coating. Below T (g), the crystallization of amorphous GSF powder was biphasic with a rapid initial crystallization stage dominated by the surface crystallization and a slow or suspended late stage controlled by the bulk crystallization. GSF exhibits the fastest surface crystallization kinetics among the known amorphous pharmaceutical solids. Well below T (g), surface crystallization dominated the overall crystallization kinetics of amorphous GSF powder. Thus, surface crystallization should be distinguished from bulk crystallization in studying, modeling and controlling the crystallization of amorphous solids.

Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice

NASA Astrophysics Data System (ADS)

Lin, Chuanlong; Yong, Xue; Tse, John S.; Smith, Jesse S.; Sinogeikin, Stanislav V.; Kenney-Benson, Curtis; Shen, Guoyin

2017-09-01

We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transition to low-density amorphous ice at 96 K and ˜1 Pa , to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.

Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chuanlong; Yong, Xue; Tse, John S.

We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transitionmore » to low-density amorphous ice at 96 K and ~ 1 Pa , to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.« less

Structural characterization and gas reactions of small metal particles by high-resolution TEM and TED

NASA Technical Reports Server (NTRS)

Heinemann, K.

1985-01-01

The interaction of 100 and 200 keV electron beams with amorphous alumina, titania, and aluminum nitride substrates and nanometer-size palladium particulate deposits was investigated for the two extreme cases of (1) large-area electron-beam flash-heating and (2) small-area high-intensity electron-beam irradiation. The former simulates a short-term heating effect with minimum electron irradiation exposure, the latter simulates high-dosage irradiation with minimum heating effect. All alumina and titania samples responded to the flash-heating treatment with significant recrystallization. However, the size, crystal structure, shape, and orientation of the grains depended on the type and thickness of the films and the thickness of the Pd deposit. High-dosage electron irradiation also readily crystallized the alumina substrate films but did not affect the titania films. The alumina recrystallization products were usually either all in the alpha phase, or they were a mixture of small grains in a number of low-temperature phases including gamma, delta, kappa, beta, theta-alumina. Palladium deposits reacted heavily with the alumina substrates during either treatment, but they were very little effected when supported on titania. Both treatments had the same, less prominent localized crystallization effect on aluminum nitride films.

Image quality and radiation dose on digital chest imaging: comparison of amorphous silicon and amorphous selenium flat-panel systems.

PubMed

Bacher, Klaus; Smeets, Peter; Vereecken, Ludo; De Hauwere, An; Duyck, Philippe; De Man, Robert; Verstraete, Koenraad; Thierens, Hubert

2006-09-01

The aim of this study was to compare the image quality and radiation dose in chest imaging using an amorphous silicon flat-panel detector system and an amorphous selenium flat-panel detector system. In addition, the low-contrast performance of both systems with standard and low radiation doses was compared. In two groups of 100 patients each, digital chest radiographs were acquired with either an amorphous silicon or an amorphous selenium flat-panel system. The effective dose of the examination was measured using thermoluminescent dosimeters placed in an anthropomorphic Rando phantom. The image quality of the digital chest radiographs was assessed by five experienced radiologists using the European Guidelines on Quality Criteria for Diagnostic Radiographic Images. In addition, a contrast-detail phantom study was set up to assess the low-contrast performance of both systems at different radiation dose levels. Differences between the two groups were tested for significance using the two-tailed Mann-Whitney test. The amorphous silicon flat-panel system allowed an important and significant reduction in effective dose in comparison with the amorphous selenium flat-panel system (p < 0.0001) for both the posteroanterior and lateral views. In addition, clinical image quality analysis showed that the dose reduction was not detrimental to image quality. Compared with the amorphous selenium flat-panel detector system, the amorphous silicon flat-panel detector system performed significantly better in the low-contrast phantom study, with phantom entrance dose values of up to 135 muGy. Chest radiographs can be acquired with a significantly lower patient radiation dose using an amorphous silicon flat-panel system than using an amorphous selenium flat-panel system, thereby producing images that are equal or even superior in quality to those of the amorphous selenium flat-panel detector system.

Atomic structure and pressure-induced phase transformations in a phase-change alloy

NASA Astrophysics Data System (ADS)

Xu, Ming

Phase-change materials exist in at least two phases under the ambient condition. One is the amorphous state and another is crystalline phase. These two phases have vastly different physical properties, such as electrical conductivity, optical reflectivity, mass density, thermal conductivity, etc. The distinct physical properties and the fast transformation between amorphous and crystalline phases render these materials the ability to store information. For example, the DVD and the Blue-ray discs take advantage of the optical reflectivity contrast, and the newly developed solid-state memories make use of the large conductivity difference. In addition, both the amorphous and crystalline phases in phase-change memories (PCMs) are very stable at room temperature, and they are easy to be scaled up in the production of devices with large storage density. All these features make phase-change materials the ideal candidates for the next-generation memories. Despite of the fast development of these new memory materials in industry, many fundamental physics problems underlying these interesting materials are still not fully resolved. This thesis is aiming at solving some of the key issues in phase-change materials. Most of phase-change materials are composed of Ge-Sb-Te constituents. Among all these Ge-Sb-Te based materials, Ge2Sb2Te5 (GST) has the best performance and has been frequently studied as a prototypical phase-change material. The first and foremost issue is the structure of the two functioning phases. In this thesis, we investigate the unique atomic structure and bonding nature of amorphous GST (a-GST) and crystalline GST ( c-GST), using ab initio tools and X-ray diffraction (XRD) methods. Their local structures and bonding scenarios are then analyzed using electronic structure calculations. In order to gain insight into the fast phase transformation mechanism, we also carried out a series of high-pressure experiments on GST. Several new polymorphs and their transformations have been revealed under high pressure via in situ XRD and in situ electrical resistivity measurements. The mechanisms of the structural and property changes have been uncovered via ab initio molecular dynamics simulations.

Naturally weathered feldspar surfaces in the Navajo Sandstone aquifer, Black Mesa, Arizona: Electron microscopic characterization

NASA Astrophysics Data System (ADS)

Zhu, Chen; Veblen, David R.; Blum, Alex E.; Chipera, Stephen J.

2006-09-01

Naturally weathered feldspar surfaces in the Jurassic Navajo Sandstone at Black Mesa, Arizona, was characterized with high-resolution transmission and analytical electron microscope (HRTEM-AEM) and field emission gun scanning electron microscope (FEG-SEM). Here, we report the first HRTEM observation of a 10-nm thick amorphous layer on naturally weathered K-feldspar in currently slightly alkaline groundwater. The amorphous layer is probably deficient in K and enriched in Si. In addition to the amorphous layer, the feldspar surfaces are also partially coated with tightly adhered kaolin platelets. Outside of the kaolin coatings, feldspar grains are covered with a continuous 3-5 μm thick layer of authigenic smectite, which also coats quartz and other sediment grains. Authigenic K-feldspar overgrowth and etch pits were also found on feldspar grains. These characteristics of the aged feldspar surfaces accentuate the differences in reactivity between the freshly ground feldspar powders used in laboratory experiments and feldspar grains in natural systems, and may partially contribute to the commonly observed apparent laboratory-field dissolution rate discrepancy. At Black Mesa, feldspars in the Navajo Sandstone are dissolving at ˜10 5 times slower than laboratory rate at comparable temperature and pH under far from equilibrium condition. The tightly adhered kaolin platelets reduce the feldspar reactive surface area, and the authigenic K-feldspar overgrowth reduces the feldspar reactivity. However, the continuous smectite coating layer does not appear to constitute a diffusion barrier. The exact role of the amorphous layer on feldspar dissolution kinetics depends on the origin of the layer (leached layer versus re-precipitated silica), which is uncertain at present. However, the nanometer thin layer can be detected only with HRTEM, and thus our study raises the possibility of its wide occurrence in geological systems. Rate laws and proposed mechanisms should consider the possibility of this amorphous layer on feldspar surface.

Naturally weathered feldspar surfaces in the Navajo Sandstone aquifer, Black Mesa, Arizona: Electron microscopic characterization

USGS Publications Warehouse

Zhu, Chen; Veblen, D.R.; Blum, A.E.; Chipera, S.J.

2006-01-01

Naturally weathered feldspar surfaces in the Jurassic Navajo Sandstone at Black Mesa, Arizona, was characterized with high-resolution transmission and analytical electron microscope (HRTEM-AEM) and field emission gun scanning electron microscope (FEG-SEM). Here, we report the first HRTEM observation of a 10-nm thick amorphous layer on naturally weathered K-feldspar in currently slightly alkaline groundwater. The amorphous layer is probably deficient in K and enriched in Si. In addition to the amorphous layer, the feldspar surfaces are also partially coated with tightly adhered kaolin platelets. Outside of the kaolin coatings, feldspar grains are covered with a continuous 3-5 ??m thick layer of authigenic smectite, which also coats quartz and other sediment grains. Authigenic K-feldspar overgrowth and etch pits were also found on feldspar grains. These characteristics of the aged feldspar surfaces accentuate the differences in reactivity between the freshly ground feldspar powders used in laboratory experiments and feldspar grains in natural systems, and may partially contribute to the commonly observed apparent laboratory-field dissolution rate discrepancy. At Black Mesa, feldspars in the Navajo Sandstone are dissolving at ???105 times slower than laboratory rate at comparable temperature and pH under far from equilibrium condition. The tightly adhered kaolin platelets reduce the feldspar reactive surface area, and the authigenic K-feldspar overgrowth reduces the feldspar reactivity. However, the continuous smectite coating layer does not appear to constitute a diffusion barrier. The exact role of the amorphous layer on feldspar dissolution kinetics depends on the origin of the layer (leached layer versus re-precipitated silica), which is uncertain at present. However, the nanometer thin layer can be detected only with HRTEM, and thus our study raises the possibility of its wide occurrence in geological systems. Rate laws and proposed mechanisms should consider the possibility of this amorphous layer on feldspar surface. ?? 2006 Elsevier Inc. All rights reserved.

Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles

NASA Astrophysics Data System (ADS)

Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

2015-03-01

The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO2.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles.The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO2.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles. Dedicated to Prof. Brigitte Weiss.

The Mineralogy of Circumstellar Silicates Preserved in Cometary Dust

NASA Technical Reports Server (NTRS)

Keller, L. P.; Messenger, S.

2010-01-01

Interplanetary dust particles (IDPs) contain a record of the building blocks of the solar system including presolar grains, molecular cloud material, and materials formed in the early solar nebula. Cometary IDPs have remained relatively unaltered since their accretion because of the lack of parent body thermal and aqueous alteration. We are using coordinated transmission electron microscope (TEM) and ion microprobe studies to establish the origins of the various components within cometary IDPs. Of particular interest is the nature and abundance of presolar silicates in these particles because astronomical observations suggest that crystalline and amorphous silicates are the dominant grain types produced in young main sequence stars and evolved O-rich stars. Five circumstellar grains have been identified including three amorphous silicate grains and two polycrystalline aggregates. All of these grains are between 0.2 and 0.5 micrometers in size. The isotopic compositions of all five presolar silicate grains fall within the range of presolar oxides and silicates, having large (17)O-enrichments and normal (18)O/(16)O ratios (Group 1 grains from AGB and RG stars). The amorphous silicates are chemically heterogeneous and contain nanophase FeNi metal and FeS grains in a Mg-silicate matrix. Two of the amorphous silicate grains are aggregates with subgrains showing variable Mg/Si ratios in chemical maps. The polycrystalline grains show annealed textures (equilibrium grains boundaries, uniform Mg/Fe ratios), and consist of 50-100 nm enstatite and pyrrhotite grains with lesser forsterite. One of the polycrystalline aggregates contains a subgrain of diopside. The polycrystalline aggregates form by subsolidus annealing of amorphous precursors. The bulk compositions of the five grains span a wide range in Mg/Si ratios from 0.4 to 1.2 (avg. 0.86). The average Fe/Si (0.40) and S/Si (0.21) ratios show a much narrower range of values and are approximately 50% of their solar abundances. The latter observation may indicate a decoupling of the silicate and sulfide components in grains that condense in stellar outflows. The amorphous silicate grains described here were not extensively affected by irradiation, sputtering, or thermal processing and may represent relatively pristine circumstellar grains. They are strong candidates for the "dirty silicates" in astronomical observations of circumstellar dust shells. The polycrystalline grains were originally amorphous silicate grains that were likely annealed in the early solar nebula but the processing was not sufficient to erase their anomalous oxygen isotopic compositions.

Experimental evidence for a crossover between two distinct mechanisms of amorphization in ice Ih under pressure.

PubMed

Strässle, Thierry; Klotz, Stefan; Hamel, Gérard; Koza, Michael M; Schober, Helmut

2007-10-26

We report neutron scattering data which reveal the central role of phonon softening leading to a negative melting line, solid-state amorphization, and negative thermal expansion of ice. We find that pressure-induced amorphization is due to mechanical melting at low temperatures, while at higher temperatures amorphization is governed by thermal melting (violations of Born's and Lindemann's criteria, respectively). This confirms earlier conjectures of a crossover between two distinct amorphization mechanisms and provides a natural explanation for the strong annealing observed in high-density amorphous ice.

Amorphous-amorphous transition in a porous coordination polymer.

PubMed

Ohtsu, Hiroyoshi; Bennett, Thomas D; Kojima, Tatsuhiro; Keen, David A; Niwa, Yasuhiro; Kawano, Masaki

2017-07-04

The amorphous state plays a key role in porous coordination polymer and metal-organic framework phase transitions. We investigate a crystalline-to-amorphous-to-amorphous-to-crystalline (CAAC) phase transition in a Zn based coordination polymer, by X-ray absorption fine structure (XAFS) and X-ray pair distribution function (PDF) analysis. We show that the system shows two distinct amorphous phases upon heating. The first involves a reversible transition to a desolvated form of the original network, followed by an irreversible transition to an intermediate phase which has elongated Zn-I bonds.

Amorphization of Indomethacin by Co-Grinding with Neusilin US2: amorphization kinetics, physical stability and mechanism.

PubMed

Bahl, Deepak; Bogner, Robin H

2006-10-01

To quantify the effects of the ratio of indomethacin to Neusilin US2 and the processing humidity on the amorphization kinetics, stability and nature of the interaction. A porcelain jar mill with zirconia balls was used to affect conversion of the physical mixtures (48 g) of indomethacin and Neusilin US2 (in the ratios 1:1 to 1:5) to amorphous states at room temperature (25 degrees C) employing either 0% RH or 75% RH. The percent crystallinity in the samples was determined from ATR-FTIR scans chemometrically. The physical stability of these co-ground amorphous powders was evaluated at 40 degrees C/75% RH and 40 degrees C/0% RH. The lower the ratio of indomethacin to Neusilin US2, the faster is the amorphization during co-grinding. Higher humidity facilitates amorphization with a more pronounced effect at the lower ratio of indomethacin to Neusilin US2. There is further amorphization of some of the partially amorphized samples on storage at 40 degrees C/75% RH for 3 months. Hydrogen bonding and surface interaction between metal ions of Neusilin US2 and indomethacin can explain changes in the FTIR spectra. The processing humidity and the ratio of indomethacin to Neusilin US2 are important factors to be considered to affect amorphization during ball milling. Amorphous indomethacin can be stabilized by co-grinding with Neusilin US2.

Fluorination of amorphous thin-film materials with xenon fluoride

DOEpatents

Weil, R.B.

1987-05-01

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.